JP2733341B2 - Optical information recording medium - Google Patents

Optical information recording medium

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Publication number
JP2733341B2
JP2733341B2 JP1263050A JP26305089A JP2733341B2 JP 2733341 B2 JP2733341 B2 JP 2733341B2 JP 1263050 A JP1263050 A JP 1263050A JP 26305089 A JP26305089 A JP 26305089A JP 2733341 B2 JP2733341 B2 JP 2733341B2
Authority
JP
Japan
Prior art keywords
protective layer
optical
layer
zns
optical recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1263050A
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Japanese (ja)
Other versions
JPH03125345A (en
Inventor
勝 鈴木
勲 森本
一之 古谷
充 小林
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Asahi Kasei Corp
Original Assignee
Asahi Kasei Kogyo KK
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Priority to JP1263050A priority Critical patent/JP2733341B2/en
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Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、新規な光学情報記録媒体、詳しくは、光や
熱などを用いて光学的に情報を高速かつ高密度に記録、
再生、消去することができる繰り返し特性の優れた光学
情報記録媒体に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Industrial application field) The present invention relates to a novel optical information recording medium, in particular, optically records information at high speed and high density using light, heat, etc.
The present invention relates to an optical information recording medium having excellent repetition characteristics that can be reproduced and erased.

従来の技術 光学記録層が、結晶質と非晶質との間で可逆的に相変
化することを利用して情報の記録・消去を行ういわゆる
相変化型光ディスクは、レーザー光のパワーを変化させ
るだけで古い情報を消去しながら同時に新たな情報を記
録する(以下“オーバーライト”という。)ことが出来
るという利点を有している。このオーバーライト可能な
相変化型光ディスクの記録材料としては、In−Se系合金
(Appl.Phys.Lett.第50巻、667ページ、1987年)やIn−
Sb−Te(Appl.Phys.Lett.第50巻、16ページ、1987
年)、Ge−Te−Sb合金等のカルコゲン合金が主として用
いられている。一方これらカルコゲン合金を用いて実際
に記録・消去を行う場合は、記録・消去時の熱による基
板の変形を防止したり、光学記録層の酸化あるいは変形
を防止するために、通常該光学記録層の両側もしくは一
方に金属あるいは半金属の酸化物、炭化物、フッ化物、
硫化物、窒化物及びこれらの混合物から成る保護層を設
ける。中でも光学記録層にカルコゲン合金を用いる場合
は、硫化亜鉛(ZnS)が光学記録層との密着力が強く繰
り返し特性上好ましい。
2. Description of the Related Art A so-called phase-change type optical disc that records and erases information by utilizing a reversible phase change between a crystalline phase and an amorphous phase in an optical recording layer changes the power of laser light. This has the advantage that new information can be simultaneously recorded while erasing old information (hereinafter referred to as "overwriting"). As a recording material for the overwritable phase-change optical disk, an In-Se alloy (Appl. Phys. Lett., Vol. 50, p. 667, 1987) or In-Se alloy
Sb-Te (Appl. Phys. Lett. Vol. 50, p. 16, 1987)
), Chalcogen alloys such as Ge-Te-Sb alloys are mainly used. On the other hand, when recording / erasing is actually performed using these chalcogen alloys, the optical recording layer is usually used to prevent deformation of the substrate due to heat during recording / erasing or to prevent oxidation or deformation of the optical recording layer. Metal or metalloid oxides, carbides, fluorides,
A protective layer comprising sulfides, nitrides and mixtures thereof is provided. In particular, when a chalcogen alloy is used for the optical recording layer, zinc sulfide (ZnS) has a strong adhesion to the optical recording layer and is preferred in terms of repetition characteristics.

(発明が解決しようとする課題) ところが、ZnSだけを保護層として用いる限りオーバ
ーライトによる記録・消去を繰り返すとZnSの結晶粒の
粗大化が生じ、耐熱性が不十分であった。そこで従来
は、ZnSにSiO2等のガラス形成材料を添加しZnSの耐熱性
を向上させていた。しかし、SiO2等の添加は、光学記録
層との密着力を弱めるためにオーバーライトによる記録
・消去を繰り返すと光学記録層物質が溶融時に物質移動
を起こし、遂には局部的に光学記録層物質が周囲に分散
してしまい、記録・消去が不可能になってしまうという
問題点がある。
(Problems to be Solved by the Invention) However, as long as ZnS alone is used as a protective layer, repeated recording / erasing by overwriting causes coarsening of ZnS crystal grains, resulting in insufficient heat resistance. Therefore, conventionally, a glass-forming material such as SiO 2 has been added to ZnS to improve the heat resistance of ZnS. However, the addition of SiO 2 or the like causes the optical recording layer material to undergo mass transfer when it is melted when repeated recording / erasing by overwriting in order to weaken the adhesive force with the optical recording layer, and finally the optical recording layer material However, there is a problem in that the recording and erasing become impossible due to the dispersion around the periphery.

本発明は上記問題点をなくし、オーバーライトにおけ
る繰り返し特性の優れた相変化型光ディスクを提供する
ことを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a phase-change type optical disc which eliminates the above problems and has excellent repetition characteristics in overwriting.

(課題を解決するための手段) 本発明者らは上述の目的を達成すべく鋭意検討した結
果、ZnSと融点が1000℃以上の硫化物の混合物から成る
保護層を用いることにより、光学記録層の物質移動を防
止出来ることを見出いだし本発明をなすに至った。即
ち、本発明は光学記録層の両側もしくは一方に保護層を
設け、該保護層がZnSと融点が1000℃以上の硫化物の混
合物から成ることを特徴とする光学情報記録媒体であ
る。
(Means for Solving the Problems) As a result of intensive studies to achieve the above object, the present inventors have found that by using a protective layer composed of a mixture of ZnS and a sulfide having a melting point of 1000 ° C. or more, an optical recording layer can be formed. It has been found that mass transfer can be prevented, and the present invention has been accomplished. That is, the present invention is an optical information recording medium characterized in that a protective layer is provided on both sides or one of the optical recording layers, and the protective layer is made of a mixture of ZnS and a sulfide having a melting point of 1000 ° C. or more.

オーバーライトの繰り返しにおいて、記録・消去時に
物質移動が起こらないためには保護層と光学記録層との
間の密着力が強いことが必要である。さらに、相変化を
利用した光学記録層は、融点が500℃以上のものが多
く、実際の記録・消去においては、光学記録層の温度は
700〜800℃にまでなっていると考えられる。従って保護
層材料は、上述の温度に耐えられるものでなければなら
ず融点は、少なくとも1000℃以上であることが望まし
い。ところが、1000℃近くの温度になると、ZnSは結晶
粒が粗大化しはじめ安定に存在し得なくなる。そこで、
ZnSに融点が1000℃以上の希土類硫化物を混合させる
と、ZnSのカルコゲン材料との密着力を損なうことなく
熱的安定性を高めることができる。硫化物の中でも希土
類金属の硫化物は、(1)硫化物の中でも高融点のもの
が多い、(2)希土類金属自身カルコゲン材料と付着力
が高い、(3)熱力学的に安定なものが多い、(4)希
土類金属が熱で分解したZnS中の硫黄と結合しやすく、
それによりZnSの熱的安定性を高める、等の理由から混
合物として好ましいと考えられる。
In order to prevent mass transfer during recording / erasing in repeated overwriting, it is necessary that the adhesion between the protective layer and the optical recording layer be strong. Further, many optical recording layers using a phase change have a melting point of 500 ° C. or higher, and in actual recording / erasing, the temperature of the optical recording layer is
It is thought to be up to 700-800 ° C. Therefore, the protective layer material must be able to withstand the above-mentioned temperatures, and the melting point is desirably at least 1000 ° C. or higher. However, at temperatures approaching 1000 ° C., ZnS crystal grains become coarse and cannot be present stably. Therefore,
When a rare earth sulfide having a melting point of 1000 ° C. or more is mixed with ZnS, the thermal stability can be increased without impairing the adhesion of ZnS to the chalcogen material. Among the sulfides, rare-earth metal sulfides are (1) most of the sulfides have a high melting point, (2) the rare-earth metal itself has a high adhesion to the chalcogen material, and (3) thermodynamically stable ones. Abundant, (4) Rare earth metals easily bond with sulfur in ZnS decomposed by heat,
This is considered to be preferable as a mixture for reasons such as enhancing the thermal stability of ZnS.

希土類硫化物としては、例えば、LaS,CeS,PrS,NdS,Sm
S,EuS,GdS,YbS,YS,La3S4,Ce3S4,Pr3S4,Nd3S4,Sm3S4,Eu3
S4,La2S3,Ce2S3,Pr2S3,Nd2S3,Sm2S3,Gd2S3,Tb2S3,Dy
2S3,Y2S3,Ho2S3,Er2S3,Tm2S3,Yb2S3,Lu2S3,LaS2,CeS2,P
rS2,NdS2,SmS2等が用いられる。これらはいずれも1000
℃以上の融点を有し混合物として適当である。
As rare earth sulfides, for example, LaS, CeS, PrS, NdS, Sm
S, EuS, GdS, YbS, YS, La 3 S 4 , Ce 3 S 4 , Pr 3 S 4 , Nd 3 S 4 , Sm 3 S 4 , Eu 3
S 4 , La 2 S 3 , Ce 2 S 3 , Pr 2 S 3 , Nd 2 S 3 , Sm 2 S 3 , Gd 2 S 3 , Tb 2 S 3 , Dy
2 S 3 , Y 2 S 3 , Ho 2 S 3 , Er 2 S 3 , Tm 2 S 3 , Yb 2 S 3 , Lu 2 S 3 , LaS 2 , CeS 2 , P
rS 2 , NdS 2 , SmS 2 and the like are used. These are all 1000
It has a melting point of at least ℃ and is suitable as a mixture.

ZnSへの硫化物の混合量は、ZnSの光学記録層に対する
付着力を損なわない程度にする必要があり、かつ繰り返
し特性を向上させる目的から鑑み、その混合量は5〜40
mol%が良く、特に10〜30mol%の範囲が好ましい。保護
層の膜厚は、50〜5000Åの範囲でコントラスト及び感度
等の兼ね合いから決めれば良い。
The mixed amount of sulfide to ZnS needs to be such that the adhesion of ZnS to the optical recording layer is not impaired, and in view of improving the repetition characteristics, the mixed amount is 5 to 40.
mol% is good, and the range of 10 to 30 mol% is particularly preferable. The thickness of the protective layer may be determined in the range of 50 to 5000 ° based on the balance between contrast and sensitivity.

第1図に本発明に係る層構成の1例を示す。透明基板
1の上に下層保護層2、光学記録層3、上層保護層4及
びUV硬化樹脂層5が順次積層されている。
FIG. 1 shows an example of the layer structure according to the present invention. On a transparent substrate 1, a lower protective layer 2, an optical recording layer 3, an upper protective layer 4, and a UV curable resin layer 5 are sequentially laminated.

さらに、場合によっては上層保護層4とUV硬化樹脂層
5の間に金属等からなる反射層を設けてもよい。また、
保護層の形成方法としては、混合ターゲットを用いたス
パッタリング法や複数のターゲットを用いた多元同時ス
パッタ法あるいは真空蒸着法(抵抗加熱、電子ビーム)
やCVD法等の方法を用いることができる。
Further, in some cases, a reflective layer made of metal or the like may be provided between the upper protective layer 4 and the UV curable resin layer 5. Also,
As a method for forming the protective layer, a sputtering method using a mixed target, a multi-source simultaneous sputtering method using a plurality of targets, or a vacuum evaporation method (resistance heating, electron beam)
Or a method such as a CVD method.

さらに光学記録層としては、Sb−Te−Ge,In−Sb−Te,
In−Se−Tl等の合金が好ましく、これらの形成方法とし
ては、スパッタ法や真空蒸着法等、公知の方法をもちい
ればよい。
Further, as the optical recording layer, Sb-Te-Ge, In-Sb-Te,
An alloy such as In-Se-Tl is preferable, and a known method such as a sputtering method or a vacuum evaporation method may be used as a method for forming these.

光学情報記録媒体における透明基板としては、従来光
ディスクの基板として慣用されているものを用いること
ができるが、光学的特性が良好で機械的強度が大きく、
かつ寸法安定性に優れらポリカーボネート、ガラスなど
が好適である。また、これらの透明基板には、アドレス
情報などの凹凸が形成されていてもよい。
As the transparent substrate in the optical information recording medium, a substrate conventionally used as a substrate for an optical disk can be used, but the optical characteristics are good and the mechanical strength is large.
Polycarbonate, glass, and the like having excellent dimensional stability are preferable. Also, irregularities such as address information may be formed on these transparent substrates.

本発明によれば、光学記録層の両側もしくは一方に、
ZnSと融点が1000℃以上の硫化物の混合物から成る保護
層を設けることによってオーバーライトの繰り返しにお
いて、光学記録層の物質移動による特性の劣化を防止す
ることが可能となり、繰り返し特性を大幅に向上させる
ことができる。
According to the present invention, on both sides or one side of the optical recording layer,
By providing a protective layer consisting of a mixture of ZnS and a sulfide with a melting point of 1000 ° C or higher, it is possible to prevent the deterioration of the characteristics due to mass transfer of the optical recording layer during repeated overwriting, greatly improving the repetition characteristics. Can be done.

以下本発明を実施例により詳細に説明する。 Hereinafter, the present invention will be described in detail with reference to examples.

(実施例) 実施例1 厚さ1.2mmのポリカーボネート基板上に以下に示す手
順で光学記録層及び保護層を形成した。使用したスパッ
タ装置の概略を第2図に示す。まずZnS及びSm2S3を別々
のターゲットから同時にスパッタさせ、100nmの混合層
を形成した。ZnSとSm2S3の混合比は、それぞれのターゲ
ットに印加するスパッタパワーを制御することで決定し
た。次にこの混合物の保護層の上に、光学記録層として
Sb−Te−Ge系合金を80nm形成した。さらに、同様にして
ZnSとSm2S3の混合物の保護層を150nm形成した。この上
に、UV硬化樹脂を5μm塗布しUV硬化させた。このよう
にして用意された基板を静止した状態でレーザー光を照
射することにより繰り返し特性を評価した。レーザー光
の波長は、830nmである。評価は、レーザー光の発光時
間を20nsecから60μsecまで、レーザー光のパワーは、1
mWから20mWまでの範囲内で任意に変えることにより行っ
た。上記評価の結果を第3図に示す。混合量は、Sm2S3
が、0mol%、5mol%、10mol%及び15mol%である。ここ
で0mol%というのは、保護層中のSm2S3が0mol%、即ち
光学記録層の両側をZnSではさんだ層構造であり、従来
用いられてきたものである。第3図中それぞれの曲線の
うち、上側の曲線が結晶状態すなわち消去状態の反射率
に対応し、下側の曲線が非晶質状態すなわち記録状態の
反射率に対応している。つまり各々反射率の差が、再生
信号の信号対雑音比(C/N比)に比例する訳である。Sm2
S3が混合された保護層を用いた光学情報記録媒体は、10
6回まで記録状態の反射率及び消去状態の反射率共に変
化がなく、ZnSにSm2S3を混合することによって繰り返し
可能回数が100倍以上伸びた。
(Example) Example 1 An optical recording layer and a protective layer were formed on a 1.2 mm-thick polycarbonate substrate by the following procedure. FIG. 2 shows an outline of the sputtering apparatus used. First, ZnS and Sm 2 S 3 were sputtered simultaneously from separate targets to form a 100 nm mixed layer. The mixing ratio between ZnS and Sm 2 S 3 was determined by controlling the sputtering power applied to each target. Next, on the protective layer of this mixture, as an optical recording layer
An Sb-Te-Ge alloy was formed to a thickness of 80 nm. In addition,
A protective layer of a mixture of ZnS and Sm 2 S 3 was formed to a thickness of 150 nm. A 5 μm UV-curable resin was applied thereon and UV-cured. The substrate thus prepared was irradiated with laser light in a stationary state to evaluate repetitive characteristics. The wavelength of the laser light is 830 nm. For the evaluation, the laser light emission time was from 20 nsec to 60 μsec, and the power of the laser light was 1
The measurement was performed by arbitrarily changing the range from mW to 20 mW. The results of the above evaluation are shown in FIG. The mixing amount is Sm 2 S 3
Are 0 mol%, 5 mol%, 10 mol% and 15 mol%. Here, “0 mol%” is a layer structure in which Sm 2 S 3 in the protective layer is 0 mol%, that is, both sides of the optical recording layer are sandwiched by ZnS, and has been conventionally used. 3, the upper curve corresponds to the reflectance in the crystalline state, ie, the erased state, and the lower curve corresponds to the reflectance in the amorphous state, ie, the recorded state. That is, the difference between the reflectances is proportional to the signal-to-noise ratio (C / N ratio) of the reproduced signal. Sm 2
An optical information recording medium using a protective layer in which S 3 is mixed is 10
The reflectance in the recorded state and the reflectance in the erased state did not change up to six times, and the number of repeatable times was increased by 100 times or more by mixing ZnS with Sm 2 S 3 .

実施例2 厚さ1.2mmのポリカーボネート基板上に、実施例1と
同様の層構成を持つ光学情報記録媒体を作成した。但
し、保護層材料は、ZnSとCe2S3の混合物を用いた。混合
量は、Ce2S3が、0mol%、5mol%、10mol%及び15mol%
である。評価方法は、実施例1と同じく基板を静止した
状態で行った。上記評価結果を第4図に示す。ZnSとCe2
S3の混合物よりなる保護層を用いた場合もSm2S3を混合
した場合と同様、記録状態の反射率及び消去状態の反射
率ともに変化なく、同様の効果が得られた。
Example 2 On a polycarbonate substrate having a thickness of 1.2 mm, an optical information recording medium having the same layer configuration as in Example 1 was produced. However, a mixture of ZnS and Ce 2 S 3 was used as a material for the protective layer. The mixing amount is 0 mol%, 5 mol%, 10 mol% and 15 mol% Ce 2 S 3
It is. The evaluation was performed with the substrate stationary as in Example 1. The results of the above evaluation are shown in FIG. ZnS and Ce 2
Similarly to the case where Sm 2 S 3 was mixed, the reflectance in the recording state and the reflectance in the erased state were not changed, and the same effect was obtained when the protective layer made of the mixture of S 3 was used.

実施例3 直径130mm、厚さ1.2mmで1.6μmのピッチの溝があら
かじめ設けられているポリカーボネート基板上に、実施
例1と同様の層構成をもつ膜を作成した。但し、保護層
にはZnSにSm2S3を10mol%混合させたものと混合してい
ないものの2種類作成した。この様にして用意された基
板を回転しながら動的に測定を行った。線速は、およそ
7.5m/sとし、記録周波数3.7MHz、記録パルス巾90nsecの
オーバーライトを繰り返した。記録パワー及び消去パワ
ーは、それぞれ16mW及び7mWを用いた。第5図及び第6
図は各々ZnSのみ(Sm2S3 0mol%)とSm2S3を10mol%混
合したものの結果を示す。Sm2S3を10mol%混合したもの
は、105回までC/N比(信号対雑音比)の変化もなく、Zn
Sの場合に比べて約10倍繰り返し特性が向上した。
Example 3 A film having a layer configuration similar to that of Example 1 was formed on a polycarbonate substrate having a diameter of 130 mm, a thickness of 1.2 mm, and a pitch of 1.6 μm in advance. However, two types of protective layers were prepared, one in which ZnS was mixed with 10 mol% of Sm 2 S 3 and the one in which Sm 2 S 3 was not mixed. The measurement was performed dynamically while rotating the substrate thus prepared. The linear velocity is approximately
Overwriting with a recording frequency of 3.7 MHz and a recording pulse width of 90 nsec was repeated at 7.5 m / s. The recording power and the erasing power were 16 mW and 7 mW, respectively. FIG. 5 and FIG.
Figure shows respectively ZnS only (Sm 2 S 3 0mol%) and the results of those mixed 10 mol% of Sm 2 S 3. The sm 2 S 3 a mixture 10 mol% is no change in the C / N ratio (signal-to-noise ratio) to 10 5 times, Zn
The repetition characteristics were improved about 10 times compared to the case of S.

発明の効果 光学記録層の両側もしくは一方にZnSと融点が1000℃
以上の硫化物の混合物からなる保護層を設けることで繰
り返し特性が向上し、記録データの信頼性を高めること
ができる。
Effects of the Invention ZnS and melting point of 1000 ° C. on both sides or one side of the optical recording layer
By providing the protective layer made of a mixture of the above sulfides, the repetition characteristics are improved, and the reliability of the recorded data can be increased.

【図面の簡単な説明】[Brief description of the drawings]

第1図は,、本発明による光学情報記録媒体の層構成の
1例を示す図であり、図中符号1は透明基板、2は保護
層、3は光学記録層、4は保護層、5はUV硬化樹脂層で
ある。第2図は、本発明で用いたスパッタ装置の模式図
であり、図中符号6は基板ホルダー、7は基板、8はベ
ルジャー、9はターゲットである。第3図は、実施例1
で、静的に繰り返し特性を評価した例を示す特性図であ
る。第4図は、実施例2で,静的に繰り返し特性を評価
した例を示す特性図である。第5図は、実施例3におけ
る保護層がZnSのみの場合の繰り返し特性を示す図、第
6図は実施例3のZnSにSm2S3を10mol%混合させた保護
層を用いた場合の繰り返し特性を示す図である。
FIG. 1 is a diagram showing an example of a layer configuration of an optical information recording medium according to the present invention, wherein reference numeral 1 denotes a transparent substrate, 2 denotes a protective layer, 3 denotes an optical recording layer, 4 denotes a protective layer, 5 denotes a protective layer. Is a UV curable resin layer. FIG. 2 is a schematic view of a sputtering apparatus used in the present invention, in which reference numeral 6 denotes a substrate holder, 7 denotes a substrate, 8 denotes a bell jar, and 9 denotes a target. FIG. 3 shows Embodiment 1.
FIG. 9 is a characteristic diagram showing an example in which the repetition characteristics are statically evaluated. FIG. 4 is a characteristic diagram showing an example of statically evaluating repetition characteristics in the second embodiment. FIG. 5 is a diagram showing the repetition characteristics when the protective layer in Example 3 is made only of ZnS, and FIG. 6 is a graph showing the case where the protective layer obtained by mixing Sm 2 S 3 with 10 mol% of ZnS in Example 3 is used. FIG. 9 is a diagram showing a repetition characteristic.

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】透明基板上に光学記録層を設け、該光学記
録層にエネルギービームを照射することによりその光学
定数を変化させ情報を記録および消去する光学情報記録
媒体において、該光学記録層の両側もしくは一方に光学
記録層に接して保護層を設け、該保護層が、硫化亜鉛と
融点が1000℃以上の硫化物の混合物から成ることを特徴
とする光学情報記録媒体。
1. An optical information recording medium, comprising: an optical recording layer provided on a transparent substrate; and irradiating the optical recording layer with an energy beam to change its optical constant to record and erase information. An optical information recording medium, wherein a protective layer is provided in contact with an optical recording layer on both sides or one side, and the protective layer is made of a mixture of zinc sulfide and a sulfide having a melting point of 1000 ° C. or higher.
【請求項2】光学記録層の両側もしくは一方に設けられ
た保護層において、該保護層を構成する材料のうち、融
点が1000℃以上の硫化物が希土類金属の硫化物であるこ
とを特徴とする特許請求の範囲第1項記載の光学情報記
録媒体。
2. A protective layer provided on both sides or one side of an optical recording layer, wherein a sulfide having a melting point of 1000 ° C. or more is a sulfide of a rare earth metal among materials constituting the protective layer. The optical information recording medium according to claim 1, wherein
JP1263050A 1989-10-11 1989-10-11 Optical information recording medium Expired - Fee Related JP2733341B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1263050A JP2733341B2 (en) 1989-10-11 1989-10-11 Optical information recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1263050A JP2733341B2 (en) 1989-10-11 1989-10-11 Optical information recording medium

Publications (2)

Publication Number Publication Date
JPH03125345A JPH03125345A (en) 1991-05-28
JP2733341B2 true JP2733341B2 (en) 1998-03-30

Family

ID=17384164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1263050A Expired - Fee Related JP2733341B2 (en) 1989-10-11 1989-10-11 Optical information recording medium

Country Status (1)

Country Link
JP (1) JP2733341B2 (en)

Also Published As

Publication number Publication date
JPH03125345A (en) 1991-05-28

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