JP2714998B2 - Inspection method of linear image sensor - Google Patents
Inspection method of linear image sensorInfo
- Publication number
- JP2714998B2 JP2714998B2 JP2321839A JP32183990A JP2714998B2 JP 2714998 B2 JP2714998 B2 JP 2714998B2 JP 2321839 A JP2321839 A JP 2321839A JP 32183990 A JP32183990 A JP 32183990A JP 2714998 B2 JP2714998 B2 JP 2714998B2
- Authority
- JP
- Japan
- Prior art keywords
- linear image
- image sensor
- semiconductor wafer
- light
- image sensors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ファクシミリや、デスクトップパブリッシ
ィングのイメージスキャナーや、デジタルコピアやバー
コードリーダ等の画像読取り装置に使われるマルチ・チ
ップ型の密着型イメージセンサーの各々のリニアイメー
ジセンサーの検査方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a multi-chip contact used in an image scanner for a facsimile, a desktop publishing, and a digital copier or a bar code reader. The present invention relates to a method for inspecting each linear image sensor of the type image sensor.
本発明は、リニアイメージセンサーが形成される側の
半導体ウェハ表面の各々のリニアイメージセンサーの境
界部に溝を形成した後、半導体ウェハ表面に形成されて
いる複数個のリニアイメージセンサーの光電変換特性を
検査することで完全に分離した後のリニアイメージセン
サーの光電変換特性を知るようにしたものである。The present invention provides a method of manufacturing a semiconductor device, comprising the steps of: forming a groove at a boundary of each linear image sensor on the surface of the semiconductor wafer on which the linear image sensor is formed; Is inspected to know the photoelectric conversion characteristics of the linear image sensor after complete separation.
複数個のリニアイメージセンサーを通常の固体撮像素
子を製造する技術で半導体ウェハ表面上に一括形成し、
第５図に示すように各々のリニアイメージセンサーを分
離することなく、又、各々のリニアイメージセンサー10
の境界に溝を入れることなく、半導体表面に光を照射
し、各々のリニアイメージセンサーの光電変換特性を検
査していた。A plurality of linear image sensors are collectively formed on the surface of a semiconductor wafer by the technology for manufacturing a normal solid-state image sensor.
As shown in FIG. 5, without separating each linear image sensor,
The semiconductor surface was irradiated with light without forming a groove at the boundary of, and the photoelectric conversion characteristics of each linear image sensor were inspected.
この従来のリニアイメージセンサーの検査方法では、
第５図のＢ−Ｂ′線に沿った断面図である第６図に示す
ように複数個のリニアイメージセンサー10の各々の境界
領域４にも光が照射されるため、その領域の半導体ウェ
ハ中で発生した光電荷52が被検査中のリニアイメージセ
ンサーの受光素子の拡散層３に侵入し見掛け上、光電変
換効率が向上したような検査結果となっていた。さらに
ひどい場合には、被検査中のリニアイメージセンサー周
辺に形成されている他のリニアイメージセンサーにも光
が照射されているため、その部分で発生した光電荷51も
被検査中のリニアイメージセンサー10の受光素子の拡散
層３に侵入し、さらに光電変換効率が向上したかの検査
結果となっていた。しかしながら、これかのリニアイメ
ージセンサーは、複数本のリニアイメージセンサーから
なるマルチ・チップ型の密着型イメージセンサーに使わ
れるため、最終的には各々のリニアイメージセンサーは
互いに完全に切り離された状態で使用され、その切り離
された状態では本来の該当するリニアイメージセンサー
中の受光窓２を通って照射された光により発生する光電
荷５の光電変換特性のみが、密着型イメージセンサーの
光電変換効率となって現れるため、分離する前の半導体
ウェハで検査した結果、得られた変換効率と大きく異な
るという欠点があった。ひどいものでは、密着型イメー
ジセンサーを構成した際、半導体ウェハで検査した時得
られた変換効率より約20〜40％も変換効率が低下したよ
うな結果になっていた。In this conventional inspection method for linear image sensors,
As shown in FIG. 6, which is a cross-sectional view taken along the line BB 'in FIG. 5, light is also applied to each boundary region 4 of the plurality of linear image sensors 10, so that the semiconductor wafer in that region is irradiated. The photocharges 52 generated therein penetrate into the diffusion layer 3 of the light receiving element of the linear image sensor under inspection, and the inspection results seem to have apparently improved photoelectric conversion efficiency. In the worst case, the other linear image sensors formed around the linear image sensor under inspection are also irradiated with light, so the photocharges 51 generated in that part also lose the linear image sensor under inspection. Inspection results were obtained as to whether or not the light-receiving elements of the ten light-receiving elements penetrated into the diffusion layer 3 and the photoelectric conversion efficiency was further improved. However, since these linear image sensors are used for multi-chip contact type image sensors consisting of multiple linear image sensors, ultimately each linear image sensor is completely separated from each other. In the separated state used, only the photoelectric conversion characteristic of the photoelectric charge 5 generated by the light irradiated through the light receiving window 2 in the original applicable linear image sensor is the same as the photoelectric conversion efficiency of the contact type image sensor. As a result, there is a defect that the conversion efficiency is greatly different from the conversion efficiency obtained as a result of inspection on a semiconductor wafer before separation. In the worst case, when the contact type image sensor was configured, the conversion efficiency was about 20 to 40% lower than the conversion efficiency obtained when inspecting the semiconductor wafer.
そこで本発明は、従来のこのような欠点を解決するた
めに、密着型イメージセンサーにした状態での光電変換
効率を、半導体ウェハ状態でのリニアイメージセンサー
の検査時に得られるようにすることを目的としている。Accordingly, the present invention has been made to solve the above-described conventional drawbacks, and aims to obtain the photoelectric conversion efficiency in the state of a contact type image sensor when a linear image sensor is inspected in a semiconductor wafer state. And
上記問題点を解決するために、この発明は、半導体ウ
ェハ表面に一括形成された複数個のリニアイメージセン
サー各々の境界領域に深さ10μｍ以上の溝を設け、光電
変換特性を検査することで、完全に互いに切り離された
状態でのリニアイメージセンサーの特性を得るようにし
た。In order to solve the above problems, the present invention provides a groove having a depth of 10 μm or more in a boundary region of each of a plurality of linear image sensors collectively formed on a surface of a semiconductor wafer, and inspects a photoelectric conversion characteristic. The characteristics of the linear image sensor when completely separated from each other are obtained.
上記のように半導体ウェハ上に形成されたリニアイメ
ージセンサーの境界部に溝を設けた状態で光電変換特性
を測定すると、被測定のリニアイメージセンサー周辺の
他のリニアイメージセンサー部に光が照射しても、検査
光が可視光のため、半導体ウェハ表面から約10μｍ以内
の深さでほとんど光は吸収され、その領域で発生した光
電荷は、溝にはさまれた状態で、その領域内及びその下
部で消滅するものがほとんどとなり、検査されるリニア
イメージセンサーの受光素子へはほとんど侵入し得ず、
半導体ウェハ状態で検査しても、完全に分離されたと同
様な状態の光電変換特性を得ることができるものであ
る。When the photoelectric conversion characteristics are measured in a state where a groove is provided at the boundary of the linear image sensor formed on the semiconductor wafer as described above, light is irradiated to other linear image sensors around the measured linear image sensor. However, since the inspection light is visible light, most of the light is absorbed at a depth of about 10 μm or less from the surface of the semiconductor wafer. Most of it disappears below it, and it can hardly enter the light receiving element of the linear image sensor to be inspected,
Even when inspection is performed in a semiconductor wafer state, it is possible to obtain photoelectric conversion characteristics in a state similar to that of a completely separated state.
以下に、この発明のリニアイメージセンサーの検査方
法の実施例を図面に基づいて説明する。第１図において
半導体ウェハ１のリニアイメージセンサー10が形成され
ている面が上になるようにダイシングソーのステージ14
の上に半導体ウェハ１をおき固定し、その後、半導体ウ
ェハ１の表面に形成された複数のリニアイメージセンサ
ーの境界領域41上をダイシングソーのブレード13を高速
回転させて深さ10μｍ以上の溝12を形成してゆく。溝12
とリニアイメージセンサー19の受光素子の拡散層３は少
なくとも５μｍは離れるように設計しておき、受光素子
の拡散層３に蓄積された電荷が、溝12を形成することに
よって半導体ウェハ１表面に生ずる歪が原因で漏れだし
たりしないようにしておく。このように第２図に示すよ
うに半導体ウェハ１の表面に形成された複数個のリニア
イメージセンサー10の各々の境界部に溝12を形成する。
そしてそのウェハの各リニアイメージセンサーを固体撮
像素子の評価用テスターで第３図のように検査用ニード
ル11で、リニアイメージセンサー10の電極14をプローブ
し、正常に動作するか検査する。この時、検査している
リニアイメージセンサー10だけでなく、その周辺部にも
光を照射し、リニアイメージセンサー10の光電変換特性
も検査するのだが、第６図で示した従来例と異なり、第
４図に示すように境界領域４に照射した光により発生す
る光電荷52のほとんどは溝12によって生じた結晶性が破
壊された領域や、その付近の歪をもった領域に捕獲され
消滅してしまい、又、溝12を間に介するため被検査中の
リニアイメージセンサー10の周辺部で発生した光電荷51
のほとんども、半導体ウェハ１の表面から離れた深いと
ころまで拡散し消滅したり、溝12付近まで拡散し、消滅
し、受光素子の拡散層３に蓄積される光電荷は、受光窓
２を通って照射された光hvにより発生した光電荷５がほ
とんどを占めることになる。尚、溝の形成にはダイシン
グソーの他、スクラバーでの溝形成や、レーザを用いた
溝形成でも良い。又、通常の半導体製造工程で用いるプ
ラズマエッチャー等で溝を形成しても良い。Hereinafter, an embodiment of the inspection method for a linear image sensor according to the present invention will be described with reference to the drawings. In FIG. 1, the stage 14 of the dicing saw is set so that the surface of the semiconductor wafer 1 on which the linear image sensor 10 is formed faces upward.
Then, the dicing saw blade 13 is rotated at high speed over the boundary area 41 of the plurality of linear image sensors formed on the surface of the semiconductor wafer 1 to fix the groove 12 having a depth of 10 μm or more. To form. Groove 12
And the diffusion layer 3 of the light receiving element of the linear image sensor 19 is designed to be separated by at least 5 μm, and charges accumulated in the diffusion layer 3 of the light receiving element are formed on the surface of the semiconductor wafer 1 by forming the groove 12. Avoid leakage due to distortion. Thus, as shown in FIG. 2, a groove 12 is formed at each boundary of a plurality of linear image sensors 10 formed on the surface of the semiconductor wafer 1.
Then, each linear image sensor of the wafer is probed with an inspection needle 11 to the electrodes 14 of the linear image sensor 10 with a tester for evaluating a solid-state image sensor as shown in FIG. At this time, not only the linear image sensor 10 being inspected, but also the periphery thereof is irradiated with light, and the photoelectric conversion characteristics of the linear image sensor 10 are also inspected. However, unlike the conventional example shown in FIG. As shown in FIG. 4, most of the photocharges 52 generated by the light applied to the boundary region 4 are trapped and extinguished in the region where the crystallinity caused by the groove 12 has been destroyed or in the region having a distortion near the region. In addition, photocharges 51 generated around the linear image sensor 10 under inspection due to the groove 12 interposed therebetween.
Most of the light is diffused and disappears to a deep place away from the surface of the semiconductor wafer 1 or diffuses and disappears near the groove 12, and the photocharge accumulated in the diffusion layer 3 of the light receiving element passes through the light receiving window 2. The light charges 5 generated by the irradiated light hv occupy most. The grooves may be formed by a scrubber or a laser using a dicing saw. Further, the grooves may be formed by a plasma etcher or the like used in a normal semiconductor manufacturing process.
この発明は、以上説明したように、半導体ウェハ表面
上に一括形成された複数個のリニアイメージセンサーの
各々の境界領域に深さ10μｍ以上の溝を設けた後に、切
り離さないウェハ状態で光電変換特性を検査するという
簡単な方法で互いに完全に切り離した後のリニアイメー
ジセンサーの特性を推測することができる効果がある。
又、この事により、本発明を用いて検査したイメージセ
ンサーを使用するマルチ・チップ方式の密着型イメージ
センサーの製作も感度等の性能を事前に知ることがで
き、周辺回路の定数設定等もし易くなり、製造のスルー
プットを上げる効果もある。さらに感度を合わせ込むこ
ともできるようになった。更に、この発明は、ウエハ表
面部分に単に溝を作ると言う簡単なしかも短時間の作業
により、ウエハ上のチップを短時間に検査する効果を有
している。As described above, according to the present invention, after a groove having a depth of 10 μm or more is provided in each boundary region of a plurality of linear image sensors formed collectively on a semiconductor wafer surface, the photoelectric conversion characteristics in a wafer state that is not separated are provided. This is advantageous in that the characteristics of the linear image sensor after being completely separated from each other can be estimated by a simple method of inspecting the linear image sensors.
Also, by this, the performance such as sensitivity can be known in advance in the production of the multi-chip type contact type image sensor using the image sensor inspected using the present invention, and the constant setting of the peripheral circuit can be easily performed. This also has the effect of increasing the manufacturing throughput. The sensitivity can be further adjusted. Further, the present invention has an effect of inspecting chips on a wafer in a short time by a simple and short operation of simply forming a groove in a wafer surface portion.
第１図は本発明にかかるリニアイメージセンサーの検査
前にウェハ表面に溝を形成する時の断面図、第２図はリ
ニアイメージセンサーの境界領域に溝を形成した後の半
導体ウェハの平面図、第３図は本発明のリニアイメージ
センサーの検査時の平面図、第４図は第３図のＡ−Ａ′
線に沿った断面図、第５図は従来の方法での検査時の平
面図、第６図は第５図のＢ−Ｂ′線に沿った断面図であ
る。 １……半導体ウェハ ２……受光窓 ３……受光窓の拡散層 ４……境界領域 ５……光電荷 10……リニアイメージセンサー 11……検査用ニードル 12……溝 13……ダイシングソーのブレードFIG. 1 is a cross-sectional view of a linear image sensor according to the present invention when grooves are formed on a wafer surface before inspection, FIG. 2 is a plan view of a semiconductor wafer after grooves are formed in a boundary region of the linear image sensor, FIG. 3 is a plan view of the linear image sensor of the present invention at the time of inspection, and FIG. 4 is a sectional view taken along line AA 'of FIG.
5 is a cross-sectional view taken along the line BB 'in FIG. 5, FIG. 5 is a plan view at the time of inspection by a conventional method, and FIG. DESCRIPTION OF SYMBOLS 1 ... Semiconductor wafer 2 ... Light-receiving window 3 ... Diffusion layer of light-receiving window 4 ... Boundary area 5 ... Photocharge 10 ... Linear image sensor 11 ... Inspection needle 12 ... Groove 13 ... Dicing saw blade
───────────────────────────────────────────────────── フロントページの続き (72)発明者 横道 昌弘 東京都江東区亀戸６丁目31番１号 セイ コー電子工業株式会社内 (72)発明者 東 正人 東京都江東区亀戸６丁目31番１号 セイ コー電子工業株式会社内 (56)参考文献 特開 平１−189933（ＪＰ，Ａ) 特開 平２−163968（ＪＰ，Ａ) 特公 平７−112056（ＪＰ，Ｂ２) ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Masahiro Yokomichi 6-31-1, Kameido, Koto-ku, Tokyo Seiko Electronic Industries Co., Ltd. (72) Inventor Masato Higashi 6-31, Kameido, Koto-ku, Tokyo (56) References JP-A-1-189933 (JP, A) JP-A-2-163968 (JP, A) JP-B-7-1112056 (JP, B2)
Claims (1)
複数本のリニアイメージセンサーを直線上に配置し，長
尺の読取りを可能ならしめる密着閉型イメージセンサー
において，半導体ウェハ上に該リニアイメージセンサー
が複数個形成された状態で，各々の該リニアイメージセ
ンサーを検査する際に，前記半導体のウェハの前記リニ
アイメージセンサーが形成されている側の表面の各々の
前記リニアイメージセンサーの境界部に深さ10μｍ以上
の溝を形成した後に前記リニアイメージセンサーの光電
変換特性を検査することを特徴とするリニアイメージセ
ンサーの検査方法。1. A contact-closed type image sensor in which a plurality of linear image sensors are linearly arranged on a long insulating substrate on which wiring is formed, and a long image can be read. When each of the linear image sensors is inspected in a state in which the plurality of linear image sensors are formed, when each of the linear image sensors is inspected, each of the linear image sensors on the surface of the semiconductor wafer on the side where the linear image sensor is formed is formed. A method for inspecting a linear image sensor, comprising: forming a groove having a depth of 10 μm or more at a boundary portion, and inspecting a photoelectric conversion characteristic of the linear image sensor.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2321839A JP2714998B2 (en) | 1990-11-26 | 1990-11-26 | Inspection method of linear image sensor |
| US07/775,824 US5329149A (en) | 1990-10-12 | 1991-10-11 | Image sensor with non-light-transmissive layer having photosensing windows |
| EP19910309425 EP0480775A3 (en) | 1990-10-12 | 1991-10-14 | An image sensor and a method of inspecting image sensors |
| US07/939,090 US5426060A (en) | 1990-10-12 | 1992-09-02 | Method of inspecting image sensors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2321839A JP2714998B2 (en) | 1990-11-26 | 1990-11-26 | Inspection method of linear image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04196146A JPH04196146A (en) | 1992-07-15 |
| JP2714998B2 true JP2714998B2 (en) | 1998-02-16 |
Family
ID=18137007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2321839A Expired - Lifetime JP2714998B2 (en) | 1990-10-12 | 1990-11-26 | Inspection method of linear image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2714998B2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01189933A (en) * | 1988-01-26 | 1989-07-31 | Seiko Instr & Electron Ltd | Manufacture of semiconductor device |
| JPH07112056B2 (en) * | 1988-08-03 | 1995-11-29 | 凸版印刷株式会社 | Wafer with solid-state image sensor |
| JPH02163968A (en) * | 1988-12-16 | 1990-06-25 | Toshiba Corp | Manufacture of solid-state image sensing device |
-
1990
- 1990-11-26 JP JP2321839A patent/JP2714998B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04196146A (en) | 1992-07-15 |
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