JP2709343B2 - Thin film EL element - Google Patents

Thin film EL element

Info

Publication number
JP2709343B2
JP2709343B2 JP1146982A JP14698289A JP2709343B2 JP 2709343 B2 JP2709343 B2 JP 2709343B2 JP 1146982 A JP1146982 A JP 1146982A JP 14698289 A JP14698289 A JP 14698289A JP 2709343 B2 JP2709343 B2 JP 2709343B2
Authority
JP
Japan
Prior art keywords
insulating layer
emitting layer
light
alkaline earth
earth metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1146982A
Other languages
Japanese (ja)
Other versions
JPH0311592A (en
Inventor
明 松野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
Original Assignee
Komatsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd filed Critical Komatsu Ltd
Priority to JP1146982A priority Critical patent/JP2709343B2/en
Publication of JPH0311592A publication Critical patent/JPH0311592A/en
Application granted granted Critical
Publication of JP2709343B2 publication Critical patent/JP2709343B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Electroluminescent Light Sources (AREA)

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、電界の印加に応答してEL発光を呈する薄膜
EL素子に係り、特に発光特性の長期信頼性を向上させた
薄膜EL素子に関する。
The present invention relates to a thin film that emits EL light in response to the application of an electric field.
The present invention relates to an EL device, and more particularly to a thin-film EL device having improved long-term reliability of light emission characteristics.

[従来の技術] 従来から薄膜EL素子の多色化に関して種々の研究が行
われ、発光層の母材としてSrやCaのようなアルカリ土類
金属の硫化物である硫化ストロンチウム(SrS)や硫化
カルシウム(CaS)が用いられている。このような薄膜E
L素子を長期的に安定して発光させるには、発光層とこ
れを両面から挟持する絶縁層との間に良好な界面を形成
する必要がある。このためたとえば特開昭62−5596に記
載されているように、Si3N4,AlNまたはBN等の窒化物か
らなる絶縁層を用いた素子が提案されている。
[Prior art] Various studies have been made on multi-color thin film EL devices, and strontium sulfide (SrS), which is a sulfide of an alkaline earth metal such as Sr or Ca, or sulfide is used as a base material of a light emitting layer. Calcium (CaS) is used. Such a thin film E
In order for the L element to emit light stably for a long period of time, it is necessary to form a good interface between the light emitting layer and the insulating layer sandwiching the light emitting layer from both sides. For this reason, for example, as described in Japanese Patent Application Laid-Open No. 62-5596, an element using an insulating layer made of a nitride such as Si 3 N 4 , AlN or BN has been proposed.

[発明が解決しようとする課題] しかしながら上記構造の薄膜EL素子においては、発光
層を両面から挟持する絶縁層に窒化物を用いても、発光
層母材のSrSまたはCaSが大気中の水分、CO2等によって
反応し、部分的にSrOまたはCaO等の酸化物、或はSrCO3,
CaCO3のような炭酸塩を生じて経時変化するため、短時
間のうちに輝度が低下してしまうという問題点がある。
[Problems to be Solved by the Invention] However, in the thin-film EL device having the above structure, even when nitride is used for the insulating layer sandwiching the light emitting layer from both sides, SrS or CaS of the light emitting layer base material has moisture in the atmosphere, Reacts with CO 2 etc. and partially oxides such as SrO or CaO, or SrCO 3 ,
Since a carbonate such as CaCO 3 is generated and changes with time, there is a problem that the luminance is reduced in a short time.

本発明は上記従来の問題点に着目し、長期的に安定し
た輝度を維持することができるような薄膜EL素子を提供
することを目的とする。
An object of the present invention is to provide a thin-film EL device capable of maintaining stable luminance over a long period of time, focusing on the above conventional problems.

[課題を解決するための手段] 上記目的を達成するために本発明に係る薄膜EL素子
は、対向する一対の電極間に発光層と絶縁層との重畳体
を介設してなる薄膜EL素子において、前記発光層がアル
カリ土類金属の硫化物を母材とし、発光層と接する絶縁
層が前記アルカリ土類金属の硫酸塩または炭酸塩である
構成とした。
Means for Solving the Problems In order to achieve the above object, a thin film EL device according to the present invention is a thin film EL device having a light emitting layer and an insulating layer interposed between a pair of opposed electrodes. In the above structure, the light-emitting layer is made of a sulfide of an alkaline earth metal as a base material, and an insulating layer in contact with the light-emitting layer is made of a sulfate or a carbonate of the alkaline earth metal.

[作用] 上記構成によれば、絶縁層として用いたアルカリ土類
金属の硫酸塩または炭酸塩が安定した化合物であるた
め、大気中の水分、CO2等で侵されることはない。また
絶縁層はアルカリ土類金属の硫化物を母材とする発光層
と同じ元素を含んでいるため、良好な界面を形成するこ
とができ、発光層の経時変化を防止することができる。
[Operation] According to the above configuration, since the sulfate or carbonate of the alkaline earth metal used as the insulating layer is a stable compound, it is not attacked by atmospheric moisture, CO 2 or the like. In addition, since the insulating layer contains the same element as the light-emitting layer whose base material is a sulfide of an alkaline earth metal, a favorable interface can be formed and the light-emitting layer can be prevented from changing over time.

[実施例] 以下に本発明に係る薄膜EL素子の実施例について、図
面を参照して詳細に説明する。
Examples Examples of the thin film EL device according to the present invention will be described below in detail with reference to the drawings.

第1図において、ガラス基板1の上にIn2O3,SnO2等の
透明電極2が形成され、その上にはSrSO4またはSrCO3
アルカリ土類金属の硫酸塩からなる第1絶縁層3がスパ
ッタ法等で積層形成されている。更にその上にSrSを母
材とし、発光中心としてCeとClとを添加してなるSrS:C
e,Clの発光層4が真空蒸着等で形成され、その上に第1
絶縁層と同じくSrSO4等の第2絶縁層5と金属電極6と
が成膜されている。
In FIG. 1, an In 2 O 3 on a glass substrate 1, a transparent electrode 2 of SnO 2 or the like is formed, a first insulating layer made of sulphate of SrSO 4 or SrCO 3 and the like alkaline earth metal thereon 3 is formed by lamination by a sputtering method or the like. SrS: C further formed by using SrS as a base material and adding Ce and Cl as emission centers
e, Cl light-emitting layer 4 is formed by vacuum evaporation or the like, and the first
Similarly to the insulating layer, a second insulating layer 5 such as SrSO 4 and a metal electrode 6 are formed.

第2図は本発明の第2実施例で、ガラス基板1の上に
In2O3,SnO2等の透明電極2が形成され、透明電極2と第
1絶縁層3との間および第2絶縁層5と金属電極6との
間にTa2O5,SiON,SiN:H等の絶縁層3aおよび5aをそれぞれ
形成し、複合絶縁層としたものである。
FIG. 2 shows a second embodiment of the present invention.
A transparent electrode 2 of In 2 O 3 , SnO 2 or the like is formed, and Ta 2 O 5 , SiON, SiN is provided between the transparent electrode 2 and the first insulating layer 3 and between the second insulating layer 5 and the metal electrode 6. : H and other insulating layers 3a and 5a are formed to form a composite insulating layer.

このように本実施例では、アルカリ土類金属の硫化物
を母材とする発光層を、アルカリ土類金属の硫酸塩また
は炭酸塩からなる絶縁層で挟持する構成とした。
As described above, in the present embodiment, the light emitting layer having the sulfide of the alkaline earth metal as the base material is sandwiched by the insulating layers made of the sulfate or carbonate of the alkaline earth metal.

本実施例では発光層の発光中心にCe,Clを用いたがこ
れに限るものではなく、発光色に対応して他の添加物を
選択することできる。
In the present embodiment, Ce and Cl are used for the light emission center of the light emitting layer. However, the present invention is not limited to this, and other additives can be selected according to the light emission color.

[発明の効果] 以上説明したように本発明によれば、安定した化合物
であるアルカリ土類金属の硫酸塩または炭酸塩を絶縁層
として用いたので、大気中の水分、CO2等による経時変
化の発生を防止する。また絶縁層はアルカリ土類金属の
硫化物を母材とする発光層と同じ元素を含んでいて良好
な界面を形成するので、発光層の経時変化を防止し、長
期的に安定した輝度を維持する薄膜EL素子を得ることが
できる。
[Effects of the Invention] As described above, according to the present invention, a sulfate or carbonate of an alkaline earth metal, which is a stable compound, is used as an insulating layer, so that the change with time due to moisture in the atmosphere, CO 2, etc. To prevent the occurrence of In addition, the insulating layer contains the same elements as the light-emitting layer whose base material is sulfide of alkaline earth metal and forms a good interface, preventing the light-emitting layer from changing over time and maintaining stable luminance over the long term. A thin-film EL element can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の第1実施例に係る薄膜EL素子の構造
図、第2図はおなじく第2実施例に係る薄膜EL素子の構
造図である。 1……ガラス基板 2……透明電極 3……第1絶縁層 3a,5a……絶縁層 4……発光層 5……第2絶縁層 6……金属電極
FIG. 1 is a structural diagram of a thin-film EL device according to a first embodiment of the present invention, and FIG. 2 is a structural diagram of a thin-film EL device according to a second embodiment. DESCRIPTION OF SYMBOLS 1 ... Glass substrate 2 ... Transparent electrode 3 ... 1st insulating layer 3a, 5a ... Insulating layer 4 ... Light emitting layer 5 ... 2nd insulating layer 6 ... Metal electrode

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】対向する一対の電極間に発光層と絶縁層と
の重畳体を介設してなる薄膜EL素子において、前記発光
層4がアルカリ土類金属の硫化酸を母材とし、発光層4
と接する絶縁層3,5が前記アルカリ土類金属の硫酸塩ま
たは炭酸塩であることを特徴とする薄膜EL素子。
1. A thin-film EL device comprising a light-emitting layer and an insulating layer interposed between a pair of opposed electrodes, wherein the light-emitting layer 4 is composed of a sulfide of alkaline earth metal as a base material, Layer 4
Wherein the insulating layers 3 and 5 that are in contact with the substrate are sulfates or carbonates of the alkaline earth metal.
JP1146982A 1989-06-09 1989-06-09 Thin film EL element Expired - Lifetime JP2709343B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1146982A JP2709343B2 (en) 1989-06-09 1989-06-09 Thin film EL element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1146982A JP2709343B2 (en) 1989-06-09 1989-06-09 Thin film EL element

Publications (2)

Publication Number Publication Date
JPH0311592A JPH0311592A (en) 1991-01-18
JP2709343B2 true JP2709343B2 (en) 1998-02-04

Family

ID=15419952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1146982A Expired - Lifetime JP2709343B2 (en) 1989-06-09 1989-06-09 Thin film EL element

Country Status (1)

Country Link
JP (1) JP2709343B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992008333A1 (en) * 1990-11-02 1992-05-14 Kabushiki Kaisha Komatsu Seisakusho Thin-film el element

Also Published As

Publication number Publication date
JPH0311592A (en) 1991-01-18

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