JP2701585B2 - Photoelectric conversion element carrier - Google Patents
Photoelectric conversion element carrierInfo
- Publication number
- JP2701585B2 JP2701585B2 JP3125796A JP12579691A JP2701585B2 JP 2701585 B2 JP2701585 B2 JP 2701585B2 JP 3125796 A JP3125796 A JP 3125796A JP 12579691 A JP12579691 A JP 12579691A JP 2701585 B2 JP2701585 B2 JP 2701585B2
- Authority
- JP
- Japan
- Prior art keywords
- conversion element
- photoelectric conversion
- ceramic member
- element carrier
- wiring pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光通信や光情報処理等
に用いられる光電気変換素子キャリアに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoelectric conversion element carrier used for optical communication and optical information processing.
【０００２】[0002]
【従来の技術】一般に電話、データ、ファクシミリ等の
端末から送られる電気信号は、電気−光変換器により光
信号に変換され、光ファイバへ送り込まれる。光ファイ
バの中を伝搬する信号は、伝送距離が進むにつれてその
パワーが弱くなったり、信号の波形が広がったりしなが
ら、通信相手の光−電気変換器へと届く。光−電気変換
器では光を電気信号の強弱に変換し、元の電話、デー
タ、ファクシミリ等の信号に戻され各端末器へ送られ
る。電気−光変換器は、半導体レーザや発光ダイオード
の発光素子により実現され、光−電気変換器はフォトダ
イオードにより実現される。2. Description of the Related Art Generally, an electric signal transmitted from a terminal such as a telephone, data, a facsimile or the like is converted into an optical signal by an electro-optical converter and sent to an optical fiber. The signal propagating in the optical fiber reaches the opto-electric converter of the communication partner while the power of the signal decreases as the transmission distance increases or the waveform of the signal spreads. The optical-to-electrical converter converts light into electric signal strength and returns the signal to the original telephone, data, facsimile, etc. and sends it to each terminal. The electro-optical converter is realized by a light emitting element such as a semiconductor laser or a light emitting diode, and the optical-electric converter is realized by a photodiode.
【０００３】従来から既に知られているこの種の光電気
変換素子キャリアは、図３および図４に示すように、角
柱状セラミック部材１の二面に配線パターン２、３が形
成されており、この配線パターン２に光電気変換素子４
を搭載すると共にこの光電気変換素子４のアノード電極
と配線パターン３をボンディングワイヤ５で接続する構
成となっている。As shown in FIGS. 3 and 4, a known type of photoelectric conversion element carrier has wiring patterns 2 and 3 formed on two surfaces of a prismatic ceramic member 1. This wiring pattern 2 has a photoelectric conversion element 4
Is mounted, and the anode electrode of the photoelectric conversion element 4 and the wiring pattern 3 are connected by the bonding wire 5.
【０００４】[0004]
【発明が解決しようとする課題】一般に、この種の光電
気変換素子キャリアは、図３、図４に示すようなキャリ
ア単体の状態で使用されることはなく、図示は省略する
が、レンズ、ファイバ、パッケージ等と組み合わせた光
受信モジュールの形態で使用される。このため、従来の
光電気変換素子キャリアでは、電気回路（集積回路ある
いは、個別部品を用いた電気回路）を搭載した混成集積
回路等に搭載され、モジュールパッケージに搭載される
構造となっている。しかるに、角柱状セラミック部材１
の寸法は、例えば２×２×４ｍｍ程度と非常に小さいた
め、製造時すなわち光電気変換素子キャリアを混成集積
回路等に搭載する際にこの光電気変換素子キャリアを倒
してボンディングワイヤを切断したり、あるいはループ
をつぶして光電気変換素子のチップとショートしたりす
る等の問題があった。Generally, this type of photoelectric conversion element carrier is not used in the state of a single carrier as shown in FIGS. 3 and 4. It is used in the form of an optical receiving module combined with a fiber, a package, and the like. For this reason, the conventional photoelectric conversion element carrier is mounted on a hybrid integrated circuit or the like on which an electric circuit (an integrated circuit or an electric circuit using individual components) is mounted, and is mounted on a module package. However, the prismatic ceramic member 1
Is very small, for example, about 2 × 2 × 4 mm. Therefore, at the time of manufacturing, that is, when the photoelectric conversion element carrier is mounted on a hybrid integrated circuit or the like, the photoelectric conversion element carrier is tilted to cut a bonding wire. Or, there is a problem that the loop is crushed and the chip of the photoelectric conversion element is short-circuited.
【０００５】本発明の目的は上述した問題に鑑みなされ
たもので、製造時におけるボンディングワイヤ切れ、あ
るいは光電気変換素子とボンディングワイヤ間のショー
ト等を確実に防止できるようにした光電気変換素子キャ
リアを提供するにある。An object of the present invention has been made in view of the above-mentioned problems, and a photoelectric conversion element carrier capable of reliably preventing a break of a bonding wire during manufacturing or a short circuit between the photoelectric conversion element and the bonding wire. To provide.
【０００６】[0006]
【課題を解決するための手段】請求項１記載の発明で
は、第１のセラミック部材の二面に配線パターンが形成
され、この配線パターンの一方の面の一部に光電気変換
素子を搭載して成る光電気変換素子キャリアにおいて、
光電気変換素子が搭載される前記した一方の面の外周
を、光電気変換素子の厚さよりも厚い第２のセラミック
部材で囲むと共に、この第２のセラミック部材の内部に
内部配線パターンを配置しておき、光電気変換素子の配
線の少なくとも一部がこの内部配線パターンを介して前
記した二面のうちの一方の面以外の面に引き出されてい
ることを特徴としている。 According to the first aspect of the present invention ,
In a photoelectric conversion element carrier, a wiring pattern is formed on two surfaces of a first ceramic member, and a photoelectric conversion element is mounted on a part of one surface of the wiring pattern.
The outer periphery of the one surface described above photoelectric conversion element is mounted, greater than the thickness of the photoelectric conversion element and the second ceramic member at circumference Mutotomoni, inside the second ceramic member
It should be placed in the internal wiring pattern, distribution of the photoelectric conversion element
At least a part of the wire is routed through this internal wiring pattern
Drawn on one of the two sides except the one
It is characterized by that.
【０００７】[0007]
【０００８】[0008]
【作用】このように本発明によれば、光電気変換素子を
搭載する第１のセラミック部材の面の外周を、光電気変
換素子より厚い第２のセラミック部材で囲むことによ
り、光電気変換素子キャリアを混成集積回路等に搭載す
る際、光電気変換素子キャリアを倒しても第２のセラミ
ック部材よりも内側にボンディングワイヤが引っ込んだ
状態となっている。したがって、ボンディングワイヤ切
れが発生したり、あるいは光電気変換素子とボンディン
グワイヤのショート等が発生したりするのを未然に防止
できる。As described above, according to the present invention, the outer periphery of the surface of the first ceramic member on which the photoelectric conversion element is mounted is surrounded by the second ceramic member which is thicker than the photoelectric conversion element. When the carrier is mounted on a hybrid integrated circuit or the like, the bonding wire is retracted inside the second ceramic member even when the photoelectric conversion element carrier is tilted. Therefore, it is possible to prevent the occurrence of a break in the bonding wire or the occurrence of a short circuit between the photoelectric conversion element and the bonding wire.
【０００９】[0009]
【実施例】次に、本発明について図面を参照して説明す
る。Next, the present invention will be described with reference to the drawings.
【００１０】図１は本発明に係わる光電気変換素子キャ
リアの一実施例を示す正面図、図２は同光電気変換素子
キャリアの側面図である。角柱状に形成された第１のセ
ラミック部材１０の二面には配線パターン１１、１２
（図１にて斜線で示す。）が形成されており、この一方
の配線パターン１１上には光電気変換素子１３が搭載配
置された構成となっている。この光電気変換素子１３の
周囲は、光電気変換素子１３の高さよりも若干高い（例
えば、０．５ｍｍ程度）第２のセラミック部材１４にて
覆われた構成となっており、この第２のセラミック部材
１４は角柱状の第１のセラミック部材１０の正面側に一
体に積層配置された構造となっている。また、第１のセ
ラミック部材１０の配線パターン１１上に搭載された光
電気変換素子１３のアノード電極は、ボンディングワイ
ヤ１５を介して配線パターン１２に接続されており、第
２のセラミック部材１４の内部に形成された配線パター
ン（図示せず）を介して光電気変換素子キャリア１６の
上部に引き出されるようになっている。FIG. 1 is a front view showing an embodiment of a photoelectric conversion element carrier according to the present invention, and FIG. 2 is a side view of the photoelectric conversion element carrier. Wiring patterns 11 and 12 are provided on two surfaces of the first ceramic member 10 formed in a prism shape.
(Shown by oblique lines in FIG. 1), and the photoelectric conversion element 13 is mounted and arranged on one of the wiring patterns 11. The periphery of the photoelectric conversion element 13 is covered with a second ceramic member 14 slightly higher than the height of the photoelectric conversion element 13 (for example, about 0.5 mm). The ceramic member 14 has a structure in which the first ceramic member 10 having a prismatic shape is integrally laminated on the front side. The anode electrode of the photoelectric conversion element 13 mounted on the wiring pattern 11 of the first ceramic member 10 is connected to the wiring pattern 12 via a bonding wire 15, and the inside of the second ceramic member 14. Through the wiring pattern (not shown) formed on the photoelectric conversion element carrier 16.
【００１１】このように、本実施例にあってボンディン
グワイヤ１５は、図２に示すようにその周囲を光電気変
換素子１３の厚さよりも厚い第２のセラミック部材１４
にて囲まれているので、光電気変換素子１３は光電気変
換素子キャリア１６の端面、つまり第２のセラミック部
材１４の端面から内側に引っ込んだ状態で配置された状
態となっている。このため、製造時に光電気変換素子キ
ャリア１６を混成集積回路（図示せず）等に搭載する
際、この光電気変換素子キャリア１６を倒したとして
も、ボンディングワイヤ１５は第２のセラミック部材１
４にて保護されるので、この製造時におけるボンディン
グワイヤ切れとか、あるいは光電気変換素子１３とボン
ディングワイヤ１５間のショート等の問題を改善するこ
とが可能となる。As described above, in the present embodiment, the bonding wire 15 has a second ceramic member 14 around its periphery that is thicker than the photoelectric conversion element 13 as shown in FIG.
, The photoelectric conversion element 13 is in a state of being retracted inward from the end face of the photoelectric conversion element carrier 16, that is, the end face of the second ceramic member 14. For this reason, when the photoelectric conversion element carrier 16 is mounted on a hybrid integrated circuit (not shown) or the like at the time of manufacturing, even if the photoelectric conversion element carrier 16 is turned down, the bonding wire 15 is connected to the second ceramic member 1.
4, the bonding wire is broken during the manufacturing process, or a problem such as a short circuit between the photoelectric conversion element 13 and the bonding wire 15 can be improved.
【００１２】[0012]
【発明の効果】以上説明したように本発明の光電気変換
素子キャリアによれば、光電気変換素子が搭載される前
記した一方の面の外周を、光電気変換素子の厚さよりも
厚い第２のセラミック部材で囲むと共に、この第２のセ
ラミック部材の内部に内部配線パターンを配置すること
にしたので、ボンディングワイヤが存在し、種々の加工
や処理が行われる面の側で、配線が剥き出しになった場
合の損傷による回路動作の障害の発生を、セラミック部
材の内部の配線パターンを用いることで確実に防止する
ことができるという優れた効果を奏することになる。 As described above, according to the photoelectric conversion element carrier of the present invention, before the photoelectric conversion element is mounted.
The outer periphery of the one surface that describes, greater than the thickness of the photoelectric conversion element and the second ceramic member at circumference Mutotomoni, the second cell
Placing internal wiring patterns inside the lamic member
, So there are bonding wires and various processing
If the wiring is exposed on the side where
Circuit operation failure due to
The use of the wiring pattern inside the material provides an excellent effect that the prevention can be surely prevented .
【図１】本発明に係わる光電気変換素子キャリアの一実
施例を示す正面図である。FIG. 1 is a front view showing one embodiment of a photoelectric conversion element carrier according to the present invention.
【図２】同光電気変換素子キャリアの側面図である。FIG. 2 is a side view of the photoelectric conversion element carrier.
【図３】従来の光電気変換素子キャリアの一例を示す正
面図である。FIG. 3 is a front view showing an example of a conventional photoelectric conversion element carrier.
【図４】同光電気変換素子キャリアの側面図である。FIG. 4 is a side view of the photoelectric conversion element carrier.
１０ 第１のセラミック部材 １１、１２ 配線パターン １３ 光電気変換素子 １４ 第２のセラミック部材 １５ ボンディングワイヤ １６ 光電気変換素子キャリア Reference Signs List 10 first ceramic member 11, 12 wiring pattern 13 photoelectric conversion element 14 second ceramic member 15 bonding wire 16 photoelectric conversion element carrier
Claims (1)
ーンが形成され、この配線パターンの一方の面の一部に
光電気変換素子を搭載して成る光電気変換素子キャリア
において、 前記光電気変換素子が搭載される前記一方の面の外周
を、光電気変換素子の厚さよりも厚い第２のセラミック
部材で囲むと共に、この第２のセラミック部材の内部に
内部配線パターンを配置しておき、前記光電気変換素子
の配線の少なくとも一部がこの内部配線パターンを介し
て前記二面のうちの一方の面以外の面に引き出されてい
ることを特徴とする光電気変換素子キャリア。1. A photoelectric conversion element carrier having a wiring pattern formed on two surfaces of a first ceramic member, and a photoelectric conversion element mounted on a part of one surface of the wiring pattern. the outer periphery of the one surface of the conversion element is mounted, greater than the thickness of the photoelectric conversion element and the second ceramic member at circumference Mutotomoni, inside the second ceramic member
An internal wiring pattern is arranged, and the photoelectric conversion element
At least a part of the wiring of this
Out of the two surfaces except for one of the two surfaces.
Photoelectric conversion element carrier, characterized in that that.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3125796A JP2701585B2 (en) | 1991-05-29 | 1991-05-29 | Photoelectric conversion element carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3125796A JP2701585B2 (en) | 1991-05-29 | 1991-05-29 | Photoelectric conversion element carrier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04352368A JPH04352368A (en) | 1992-12-07 |
| JP2701585B2 true JP2701585B2 (en) | 1998-01-21 |
Family
ID=14919101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3125796A Expired - Lifetime JP2701585B2 (en) | 1991-05-29 | 1991-05-29 | Photoelectric conversion element carrier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2701585B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110040701A (en) * | 2009-10-13 | 2011-04-20 | 스탠리 일렉트릭 컴퍼니, 리미티드 | Light emitting device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60240173A (en) * | 1984-05-15 | 1985-11-29 | Nec Corp | Chip carrier type light receiving device |
| JPS63198380A (en) * | 1987-02-13 | 1988-08-17 | Mitsubishi Electric Corp | Chip-carrier type photo-semiconductor device |
-
1991
- 1991-05-29 JP JP3125796A patent/JP2701585B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110040701A (en) * | 2009-10-13 | 2011-04-20 | 스탠리 일렉트릭 컴퍼니, 리미티드 | Light emitting device |
| KR101711595B1 (en) | 2009-10-13 | 2017-03-02 | 스탠리 일렉트릭 컴퍼니, 리미티드 | Light Emitting Device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04352368A (en) | 1992-12-07 |
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