JP2696750B2 - Semiconductor element pattern formation method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a pattern of a semiconductor device, and more particularly to a method for forming a fine pattern on a highly reflective lower layer by using a colloid and a metal layer as an etching barrier. The photosensitive film
The present invention relates to a method of forming a pattern of a semiconductor device, which can prevent a change in pattern width (Pattern Width Variation) by etching (Photoresist) and a conductive layer.

[0002]

2. Description of the Related Art Conventionally, a method for forming a pattern of a semiconductor device is to apply a photosensitive film on a conductive layer or an insulating layer for patterning, expose a predetermined portion of the photosensitive film using a mask, and develop the photosensitive film. Thus, a pattern of the photosensitive film is formed. Next, the conductive layer or the insulating layer is etched using a photosensitive film pattern as an etching barrier.

[0003]

However, when the reflectivity of the lower conductive layer and the insulating layer increases during exposure, the pattern of the photosensitive film is determined based on irregular reflection due to strong exposure energy. And the size of the pattern formed thereby also changes. Further, as the semiconductor element is highly integrated, it becomes more difficult to form a fine pattern based on the above-mentioned problems.

Accordingly, the present invention provides a method of forming a colloid and a metal layer on an etching barrier to form a fine pattern on a lower reflection layer.
An object of the present invention is to provide a method for forming a pattern of a semiconductor device, which can solve the above-mentioned problems by etching a photosensitive film and a conductive layer by using the film as a carrier.

[0005]

In order to achieve the above object, a pattern forming method of the present invention is to form a conductive layer or an insulating layer formed on a substrate into a pattern required by an element. Forming a thin exposure region on the surface of the photosensitive film exposed by the mask after applying a photosensitive film on the upper surface, and forming a colloid layer on the entire structure on which the exposure region is formed, and then developing. Removing the colloid and the exposed region above the exposed region using a liquid, selectively forming a metal layer only on the remaining colloid, and using the metal layer as an etching barrier to form the photosensitive film and the photosensitive layer. The method comprises the steps of: removing a conductive layer or an insulating layer; and sequentially removing the metal layer, the colloid, and the photosensitive film.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 (A)
FIG. 1E is a cross-sectional view illustrating a method for forming a pattern of a semiconductor device according to the present invention.

FIG. 1A shows that after a photosensitive film 3 is applied on a predetermined substrate 1 on which a conductive layer or an insulating layer 2 is formed, a mask 4 is placed at a selected position, and a low exposure energy is applied. FIG. 6 is a cross-sectional view of a state where the exposure is performed using the light emitting device. The photosensitive film 3 used for flattening the lower layer is formed, for example, to a thickness of about 1 to 2 μm. At the time of exposure,
The photosensitive film 3 is exposed only at its surface (within a thickness of about 0.5 μm from the surface) by low exposure energy.

FIG. 1B is a cross-sectional view showing a state in which a colloid layer 5 is formed on all upper surfaces in a state where an exposed region is formed on the exposed surface of the photosensitive film 3. The colloid layer 5 is formed of a colloidal Pd / Sn catalyst (Cat
alyst) using a vapor deposition method.

In FIG. 1C, the exposed area 6 and the colloid 5 thereon are removed using a developing solution.
That is, the developer penetrates into the exposed area to remove the exposed area 6 and remove the colloid 5 above the exposed area 6. After that, electroless plating solution tank (Electroless
The metal layer is selectively formed only on the remaining colloid 5 by dipping in a plating bath.

FIG. 1D shows that the photosensitive film 3 is plasma-etched (P) using the metal layer 7 as an etching barrier.
(laser etching) method. Thereafter, the exposed conductive layer or insulating layer 2 is also removed by a plasma etching method, and the metal layer 7, the colloid layer 5 and the photosensitive film 3 are sequentially removed. As shown in FIG. The insulating layer 2 is patterned.

The metal layer 7 and the colloid layer 5 can be formed on the substrate 1 by any of dipping and vapor deposition methods.
It is desirable to remove with a dilute nitric acid (Nitric acid) since residue may be present on the back surface of the metal.

[0012]

As described above, according to the present invention, a colloid remaining only on an unexposed portion of a photosensitive film and a metal layer selectively formed only on the colloid are used as an etching barrier. By removing the photosensitive film and then patterning the conductive layer or the insulating layer, the current state of Notching and Necking is prevented even when the lower layer is a conductive layer, and a change in the pattern width is prevented. There is an excellent effect that does not occur.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a method for forming a pattern of a semiconductor device according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... Conductive layer or insulating layer, 3 ... Photosensitive film, 4 ... Mask, 5 ... Colloid layer, 6 ... Exposure area, 7 ... Metal layer

Claims (4)

(57) [Claims] In a method of forming a pattern of a semiconductor device, a photosensitive film is applied on a conductive layer or an insulating layer formed on a substrate to form a pattern required by the device, and then a mask is formed thereon by a mask. Forming a thin exposure area on the exposed surface of the photosensitive film; forming a colloid layer on the entire structure having the exposure area formed thereon; Removing the exposed area; selectively forming a metal layer only on the remaining colloid; removing the photosensitive film and the conductive layer or the insulating layer using the metal layer as an etching barrier; A method for forming a pattern of a semiconductor device, comprising: sequentially removing a metal layer, a colloid, and a photosensitive film. 2. The method according to claim 1, wherein the exposure region is formed at a depth of about 0.3 to 0.5 μm from a surface portion of the photosensitive film. 3. The colloid layer is a colloidal Pd / S
2. The method according to claim 1, wherein the pattern is formed by a vapor deposition method using an n-catalyst material. 4. The method according to claim 1, wherein the metal layer is formed by dipping using an electroless plating bath.