JP2687270B2 - Display method of semiconductor device sectional structure - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is capable of rapidly and realistically demonstrating the cross-sectional structure of a semiconductor device, which would be difficult to infer from pattern data on a plane immediately by an expert. The present invention relates to a method for displaying a semiconductor device cross-sectional structure, which is widely used in fields such as device design and failure analysis.

[0002]

2. Description of the Related Art To display the cross-sectional structure of a semiconductor device,
There are a method based on shape simulation and a method based on a simple model (see SIMPLE developed at the University of California, Berkeley). Usually, the shape simulation is used when it is desired to know the cross-sectional shape of a narrow area accurately, and the simple model is used when the cross-sectional structure in a wide range is displayed at high speed.

In any of the conventional display methods, as shown in FIG. 8, the first material region 1, the second material region 2, and the third material region which form the semiconductor device displayed on the screen G are formed. 3 and the air region 4 are represented by a polygon formed by a material boundary line 5 and a surface boundary line 6, respectively, and the material regions 1, 2,
Three or four boundaries were defined. Further, when the shape after each process is displayed, a graphic operation (calculation processing by a program) is performed on the shape data to generate new data having no contradiction, and then this data is displayed on the screen.

[0004]

However, since the method using the simple model also expresses the shape using polygons as in the method using the shape simulation, the calculation speed becomes slower when the accuracy of the shape expression (reality) is increased. was there. Further, since there is a possibility that the sides of the polygon may intersect, there is a problem in that advanced graphic operation processing technology is required in order to prevent inconsistency in the shape data.

Therefore, the present invention has been made in order to solve the above-mentioned conventional problems, and the purpose thereof is to be able to immediately know a real cross-sectional structure from pattern data on a plane, and It is an object of the present invention to provide a method of displaying a cross-sectional structure of a semiconductor device, which makes it possible to display a cross-sectional structure with high reliability without requiring any figure calculation processing.

[0006]

In order to solve such a problem, the present invention defines the substance type by the pixel value attached to each pixel on the screen, and the pixel value of an adjacent pixel is self-defined. Pixels that differ from the pixel value of are determined to be the boundaries of the substance. Furthermore, using the depiction function of the basic figure, figure calculation is equivalently performed on the screen to directly generate the display screen. Since the pixel value corresponds to the display color on the screen, the type of substance can be specified on the screen by the difference in color or brightness.

[0007]

According to the present invention, high-speed display of a highly realistic cross-section structure is possible. Further sophisticated graphic calculation processing is unnecessary.

[0008]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a diagram showing definitions of material regions and material boundaries on a screen for explaining an embodiment of a method for displaying a semiconductor device sectional structure according to the present invention. In the present invention, the material region is defined by the pixel value attached to each pixel P on the screen G. A place where pixels P having the same pixel value on the screen G do not have data of a substance region and a substance boundary, is determined to be a substance region of the same substance, and a pixel value of an adjacent pixel is different from its own pixel value. Is the material boundary (boundary pixel) of the material.

Specifically, as shown in FIG. 1, the pixels P corresponding to the first material region, the second material region, and the third material region which form the semiconductor device on the screen G are respectively set to the first pixel region. Material pixel P ₁ , second material pixel P ₂ , third
The called a material pixel P _3, all pixels P present in the space above the surface of the semiconductor device is defined as the air pixel P _4. Also, the material pixels in contact with the material pixels P ₁ , P ₂ , P ₃ are defined as material boundary pixels P ₅ , P, respectively.
₆ , P ₇ , P ₈ and the third material pixel P ₃ in contact with the air pixel P ₄ is defined as the surface boundary pixel P ₉ .

2 to 7 show a procedure for generating a shape display screen after the execution of the processing steps of various semiconductor devices by the method for displaying a semiconductor device sectional structure according to the present invention. FIG.
And FIG. 3 shows an example of a display screen generation procedure in the case where the deposition is carried out on the uneven base shape by the display method according to the present invention.

In the case of the isotropic deposition shown in FIG. 2, first, all pixel information of the initial screen is saved on the screen G as shown in FIG. 2 (a). In this case, this screen G
Information corresponding to the structure in which the air region 4 is formed on the second substance region 2 is displayed on the upper side. Next, as shown in FIG. 2B, an ellipse or a circle 10 having a diameter corresponding to the deposition film thickness with a pixel value corresponding to the deposition material as the third material region 3 centering on the surface boundary pixel P _9.
To draw. Next, as shown in FIG. 2 (c), pixels of the entire material region other than the air region 4 of the initial screen (in this case, the second region
Substance pixel P ₂ ) is redrawn with the pixel value of the initial screen.

Further, in the case of the vertical deposition shown in FIG. 3, as shown in FIG. 3A, the pixels corresponding to the deposition material as the third material region 3 with all the surface boundary pixels P ₉ as starting points. The line segment 11 of the value is drawn according to the deposition film thickness. The display is as shown in FIG.

FIG. 4 and FIG. 5 show an example of a display screen generation procedure when etching is performed based on a mask pattern by the display method according to the present invention.
In the case of the isotropic etching shown in FIG.
All pixel information of the initial screen is saved as shown in (a). In this case, the information corresponding to the structure in which the second substance region 2 is formed on the fourth substance region 7 and the air region 4 is further formed is displayed on the screen G. Here, the material pixel of the fourth material region 7 is referred to as P ₁₀ . Next, as shown in FIG. 4B, the pattern data D (white transparent portion) of the mask M is provided with an offset O, and the pixel values of the air pixel P ₄ are centered on all corresponding surface boundary pixels P _9. An ellipse or circle 10 having a diameter corresponding to the etching film thickness is drawn. Next, as shown in FIG. 4C, all the air pixels P ₄ of the initial screen and the pixels of all material regions except the etching target material of the initial screen (in this case, the fourth material pixel P ₁₀ ) are set. Redraw with initial screen pixel value.

Further, in the case of the vertical etching shown in FIG. 5, the pattern data D of the mask M as shown in FIG.
An offset O is added to the (white transparent portion), and all the corresponding surface boundary pixels P ₉ are used as starting points, and the air region 4 has a length corresponding to the etching rates of the second substance region 2 and the first substance region 1. The line segment 11 of the pixel value of is drawn.
In the case of etching using the inclination of the resist,
The length of each line segment 11 is calculated in consideration of the virtual shape of the virtual resist 12. The display is as shown in FIG.

FIG. 6 shows an example of display screen generation in the case where surface flattening is performed by coating a viscous film on an uneven base shape by the display method according to the present invention. First, as shown in FIG. 6A, a virtual shape 13 in which the surface of the second substance region 2 is applied with a constant film thickness as the third substance region 3 is assumed. Next, as shown in FIG. 6 (b), the height of each place is calculated by a weighted average based on the Gaussian distribution,
Surface boundary pixel P ₈ with a pixel value corresponding to the coating material
Starting from, the line segment 11 corresponding to this height is drawn.
The display is as shown in FIG.

Further, FIG. 7 shows an example of a display screen generation procedure when impurities are introduced by ion implantation in the display method according to the present invention. First, all pixel information of the initial screen is saved as shown in FIG. Next, as shown in FIG. 7B, pattern data D of the mask M
An offset O is given to (white transparent portion), and an ellipse or circle 10 is drawn around all the surface boundary pixels P ₉ corresponding to the ion implantation target substance as the third substance region 3. Next, as shown in FIG. 7C, all the air pixels P ₄ of the initial screen and the pixels of all the material regions except the ion implantation target of the initial screen (the first material pixel P _{1 in} this case) Is redrawn with the initial screen pixel values.

[0017]

As described above, according to the present invention,
The real cross-sectional structure can be immediately known from the pattern data on the plane, and the location on the pattern and the problematic point on the pattern can be easily found. Further, since no sophisticated graphic calculation processing is required at all, the reliability can be greatly improved as compared with the conventional display method, and the cross-section display of a complicated multi-layered semiconductor device is also extremely excellent. The effect is obtained.

[Brief description of the drawings]

FIG. 1 is a diagram for defining a material region and a material boundary on a screen for explaining a display method of a semiconductor device sectional structure according to the present invention.

FIG. 2 is a diagram showing an example of a display screen generation procedure for an isotropic deposition relating to a display method of a semiconductor device sectional structure according to the present invention.

FIG. 3 is a diagram showing an example of a display screen generation procedure for a vertical deposition relating to a display method of a semiconductor device sectional structure according to the present invention.

FIG. 4 is a diagram showing an example of a display screen generation procedure for isotropic etching relating to the method for displaying a semiconductor device sectional structure according to the present invention.

FIG. 5 is a diagram showing an example of a display screen generation procedure for vertical etching according to the method for displaying a semiconductor device sectional structure according to the present invention.

FIG. 6 is a diagram showing an example of a display screen generation procedure for flattening the surface by applying a viscous film according to the display method of the semiconductor device cross-sectional structure according to the present invention.

FIG. 7 is a diagram showing an example of a display screen generation procedure for ion implantation relating to the method for displaying a semiconductor device sectional structure according to the present invention.

FIG. 8 is a diagram showing a definition of a material region and a material boundary by a conventional cross-section display method.

[Explanation of symbols]

1 First Material Area 2 Second Material Area 3 Third Material Area 4 Air Area 5 Material Boundary Line 6 Surface Boundary Line 7 Fourth Material Area 10 Circle 11 Line Segment 12 Virtual Resist M Mask O Offset G Screen P ₁ first material pixel P ₂ second material pixel P ₃ third material pixel P ₄ air pixel P ₅ material boundary pixel P ₆ material boundary pixel P ₇ material boundary pixel P ₈ material boundary pixel P ₉ surface boundary pixel P ₁₀ Fourth Material Pixel

Claims (1)

(57) [Claims] 1. A method for displaying a semiconductor device cross-sectional structure, which displays a cross-sectional structure at a location designated on the basis of process data and mask pattern data when manufacturing a semiconductor device on a screen of a computer, comprising: The type of substance is defined by the pixel value attached to each pixel, the pixel in which the pixel value of the adjacent pixel is different from its own pixel value is judged as the boundary pixel of the substance, and the basic figure centered on the boundary pixel A semiconductor by a drawing process and a process of saving all pixel values of the initial screen before drawing the basic figure and redrawing pixels having a specific value on the initial screen after the basic figure drawing process with the pixel value A method for displaying a cross-sectional structure of a semiconductor device, characterized in that the cross-sectional shape of the device is simulated and displayed on a computer screen in order from the lower layer.