JP2684255B2 - Dielectric porcelain composition for electronic devices - Google Patents
Dielectric porcelain composition for electronic devicesInfo
- Publication number
- JP2684255B2 JP2684255B2 JP3074474A JP7447491A JP2684255B2 JP 2684255 B2 JP2684255 B2 JP 2684255B2 JP 3074474 A JP3074474 A JP 3074474A JP 7447491 A JP7447491 A JP 7447491A JP 2684255 B2 JP2684255 B2 JP 2684255B2
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- Japan
- Prior art keywords
- electronic devices
- composition
- dielectric
- dielectric porcelain
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000203 mixture Substances 0.000 title claims description 28
- 229910052573 porcelain Inorganic materials 0.000 title claims description 6
- 239000000919 ceramic Substances 0.000 description 20
- 150000001875 compounds Chemical class 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 238000005245 sintering Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は、電子デバイス用誘電
体磁器組成物、特に、ＳＨＦ帯で利用する複合ペロブス
カイト型化合物からなる誘電体磁器組成物の改良に係
り、Ｓｒ（１／２Ｇａ・１／２Ｔａ）Ｏ3系でＳｒをＢ
ａに置換することにより、すぐれた磁器となした電子デ
バイス用誘電体磁器組成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric ceramic composition for electronic devices, and more particularly, to an improvement of a dielectric ceramic composition composed of a complex perovskite type compound used in the SHF band. / 2Ta) O 3 system with Sr as B
The present invention relates to a dielectric porcelain composition for electronic devices, which has excellent porcelain by substituting a.
【０００２】[0002]
【従来の技術】磁器組成物の特性が低損失で、温度特性
の良好なることを利用する各種電子デバイス用誘電体磁
器組成物には、温度補償用コンデンサを初め、ＳＨＦ帯
で低損失であることを利用する衛星放送直接受信用、ダ
ウンコンバーター用等の誘電体共振器、マイクロ波スト
リップライン基板等に用いられる種々の誘電体磁器組成
物がある。2. Description of the Related Art Dielectric ceramic compositions for various electronic devices that make use of the fact that the properties of ceramic compositions are low loss and have good temperature characteristics are low loss in the SHF band, including capacitors for temperature compensation. There are various dielectric porcelain compositions used for dielectric resonators for direct reception of satellite broadcasts, down converters, etc., microwave strip line substrates and the like.
【０００３】一般に、ＳＨＦ帯用として用いられる誘電
体磁器組成物としては、従来、ペロブスカイ型化合物中
でも、特に、下記組成物の複合ペロブスカイト型化合物
が広く利用されている。 Ｂａ（１／３Ｂ’2+・２／３Ｂ”5+）Ｏ3 但し、Ｂ’2+；２価金属イオン（Ｚｎまたはさらに、Ｍ
ｇ、Ｎｉ、Ｃｏ、Ｍｎ等の１種または２種以上）、Ｂ”
5+；Ｔａ，Ｎｂ。Generally, as a dielectric ceramic composition used for the SHF band, a composite perovskite type compound having the following composition is widely used among the perovskite type compounds. Ba (1 / 3B ' 2+・ 2 / 3B " 5+ ) O 3 However, B'2+; divalent metal ion (Zn or further M
g, Ni, Co, Mn, etc., one or more kinds), B ″
5+ ; Ta, Nb.
【０００４】例えば、従来Ｂａ（１／３Ｚｎ・２／３Ｔ
ａ）Ｏ3系材（以下、ＢＺＴ系材という）があるが、難
焼結材として知られ、高Ｑ、すなわち１０ＧＨｚで１０
０００以上のＱ値を得るためには、１５００℃で、１２
０時間程度の焼結が必要であった。また、長時間の焼結
の際に、ＺｎＯが蒸発（昇華）することで焼結体の表面
層にＺｎＯ不足相が生成することが知られており、該相
は誘電損失が大きく同部を研削する必要がある。For example, conventional Ba (1 / 3Zn / 2 / 3T)
a) There is an O 3 -based material (hereinafter, referred to as BZT-based material), which is known as a difficult-to-sinter material and has a high Q, that is, 10 at 10 GHz.
To obtain a Q value of 000 or more, at 1500 ° C, 12
Sintering for about 0 hours was required. Further, it is known that ZnO is evaporated (sublimated) during long-term sintering to generate a ZnO-deficient phase in the surface layer of the sintered body, and this phase has a large dielectric loss and the same portion. Needs to be ground.
【０００５】[0005]
【発明が解決しようとする課題】従って、全面研摩加工
が不可欠で複雑な形状のセラミックスの作成が困難であ
り、高いＱ値のまま量産することが困難であった。ま
た、用途によって、所定の共振周波数温度係数τｆを調
整する必要があるが、ＢＺＴ系材は、＋１ｐｐｍ／℃近
傍のτｆを有することが知られており、単一化合物のた
めτｆを調整することは困難であった。Therefore, it is difficult to produce ceramics having a complicated shape because it is indispensable to polish the entire surface, and it is difficult to mass-produce with a high Q value. Further, it is necessary to adjust the predetermined resonance frequency temperature coefficient τf depending on the application, but it is known that the BZT material has τf in the vicinity of +1 ppm / ° C. Therefore, it is necessary to adjust τf for a single compound. Was difficult.
【０００６】この発明は、従来の複合ペロブスカイト型
化合物のかかる現状に鑑み、従来の誘電体磁器組成物と
同等またはそれ以上のＱ、τｆ、εｒ特性を有し、内質
均一のセラミックスを通常の焼結により安定的に得るこ
とができる電子デバイス用誘電体磁器組成物の提供を目
的としている。[0006] In view of the present situation of the conventional composite perovskite type compound, the present invention provides a ceramic having a uniform internal quality with Q, τf and εr characteristics equal to or higher than those of the conventional dielectric ceramic composition. An object of the present invention is to provide a dielectric ceramic composition for electronic devices, which can be stably obtained by sintering.
【０００７】[0007]
【課題を解決するための手段】発明者は、前記複合ペロ
ブスカイト型化合物の欠点を解消することを目的に、Ａ
（１／２Ｂ’3+・１／２Ｂ”5+）Ｏ3−Ｏ 3 型ペロブスカ
イト化合物に着目し３価金属イオンとしてＧａ、５価金
属イオンとしてＴａを選ぶことにより、内質的に均一で
特性がすぐれかつ焼結性のすぐれた磁器が得られること
を知見し、ＸＳｒ（１／２Ｇａ・１／２Ｔａ）Ｏ3−Ｙ
Ｂａ（１／２Ｇａ・１／２Ｔａ）Ｏ3系が高Ｑであり、
共振周波数温度係数τｆを任意に選択できることを知見
し、この発明を完成した。DISCLOSURE OF THE INVENTION The inventor of the present invention aims to eliminate the drawbacks of the above composite perovskite type compound,
(1 / 2B '3+ · 1 / 2B "5+) O 3 - O 3 type Perobusuka
It was found that by selecting Ga as the trivalent metal ion and Ta as the pentavalent metal ion focusing on the ito compound, it is possible to obtain a porcelain having a homogeneous internal property, excellent characteristics, and excellent sinterability. 1 / 2Ga · 1 / 2Ta) O 3 -Y
Ba (1 / 2Ga ・ 1 / 2Ta) O 3 system has high Q,
The present invention has been completed by finding that the temperature coefficient τf of the resonance frequency can be arbitrarily selected.
【０００８】この発明は、基本組成を ＸＳｒ（１／２Ｇａ・１／２Ｔａ）Ｏ3−ＹＢａ（１／２Ｇａ・１／２Ｔａ）Ｏ3 と表し、組成範囲を限定するＸ、Ｙが下記値を満足する
組成からなることを特徴とする電子デバイス用誘電体磁
器組成物である。 Ｘ＋Ｙ＝１ ０．３≦Ｘ＜１ ０．７≧Ｙ＞０[0008] The present invention, the basic composition expressed as XSr (1 / 2Ga · 1 / 2Ta) O 3 -YBa (1 / 2Ga · 1 / 2Ta) O 3, X to limit the composition range, Y is a following value A dielectric ceramic composition for electronic devices, which is characterized by having a satisfactory composition. X + Y = 1 0.3 ≦ X < 1 0.7 ≧ Y > 0
【０００９】[0009]
【作用】この発明は、Ｓｒ（１／２Ｇａ・１／２Ｔａ）
Ｏ3−Ｂａ（１／２Ｇａ・１／２Ｔａ）Ｏ3系において、
複合プロプスカイト型化合物のＡ，Ｂサイト のＳｒと
Ｂａの比率、すなわち基本組成式のＸ値が０．３未満、
Ｙ値が０．７を越えると、得られる誘電体磁器組成物は
Ｑ値の劣化が著しく、また温度係数の劣化も大きくなる
ので、０．３≦Ｘ＜１、０．７≧Ｙ＞０の範囲とする。The present invention is based on Sr (1 / 2Ga ・ 1 / 2Ta)
In O 3 -Ba (1 / 2Ga · 1 / 2Ta) O 3 system,
The ratio of Sr and Ba at the A and B sites of the composite propuscite type compound, that is, the X value of the basic composition formula is less than 0.3
When the Y value exceeds 0.7, the resulting dielectric ceramic composition is significantly deteriorated in Q value and also in temperature coefficient. Therefore, 0.3 ≦ X <1, 0.7 ≧ Y > 0. The range is.
【００１０】この発明の誘電体磁器組成物は、１０ＧＨ
ｚにおけるＱは３０００程度から１１５００まで大きく
とれ、τｆ −５０〜＋１０ｐｐｍ／℃、εｒ ２６〜
２９となり、従来の誘電体磁器組成物と同等またはそれ
以上の特性のものが得られ、焼成時においても、内質均
一なセラミックスを安定的に得ることができる。The dielectric ceramic composition of the present invention is 10 GH
Q in z can be as large as about 3000 to 11500, τf −50 to +10 ppm / ° C., εr 26 to
29, the characteristics of the dielectric ceramic composition are the same as or better than those of the conventional dielectric ceramic composition, and it is possible to stably obtain a ceramic having a uniform inner quality even during firing.
【００１１】なお、この発明においては、ＧａをＡｌ3+
などの３価金属イオンで約２０ｍｏｌ％まで置換しても
ほぼ同等の効果が得られる。In the present invention, Ga is Al 3+.
Almost the same effect can be obtained by substituting up to about 20 mol% with a trivalent metal ion such as.
【００１２】[0012]
【実施例】原料を表１に示した組成になるように秤量
し、ボールミルにて混式混合し、１２００℃に２時間仮
焼した後、再度ボールミルにて平均粒径１μｍ程度に粉
砕した。この粉砕粉を加圧成形し、１５００℃〜１６０
０℃に焼成して、寸法９ｍｍφ×２０ｍｍの焼結体を得
た。Example The raw materials were weighed so as to have the composition shown in Table 1, mixed-mixed in a ball mill, calcined at 1200 ° C. for 2 hours, and then pulverized again in a ball mill to an average particle size of about 1 μm. This crushed powder is pressure-molded, and 1500 ° C to 160 ° C.
It was fired at 0 ° C. to obtain a sintered body having dimensions of 9 mmφ × 20 mm.
【００１３】得られた焼結体について、２５℃、１０Ｇ
Ｈｚにおける比誘電率εｒ、Ｑ、共振周波数の温度係数
τｆ（ｐｐｍ／℃）を測定し、その結果を表１に示す。About the obtained sintered body, 25 ° C, 10G
The relative permittivity εr, Q at Hz and the temperature coefficient τf (ppm / ° C.) of the resonance frequency were measured, and the results are shown in Table 1.
【００１４】なお、表１における比誘電率とＱは、Ｈａ
ｋｋｉ と Ｃｅｌｅｍａｎらによる誘電体共振器法
により測定したもので、共振周波数の温度係数τｆ、誘
電率、誘電率の温度係数τ εとは、磁器の線熱膨張係
数αとの間に下記式の如き関係がある。 τｆ＝−◆τε−αThe relative permittivity and Q in Table 1 are Ha
The temperature coefficient τf of the resonance frequency, the dielectric constant, and the temperature coefficient τ ε of the dielectric constant are measured by the dielectric resonator method by Kki and Celeman et al. There is such a relationship. τf =-◆ τε-α
【００１５】表１の結果より明らかなように、この発明
による誘電体磁器組成物は、共振周波数の温度係数は、
−５０近傍から＋１０ｐｐｍ／ ℃付近まで広く、低損
失、高誘電率材料であることが分る。As is clear from the results shown in Table 1, the dielectric ceramic composition according to the present invention has a temperature coefficient of resonance frequency
It can be seen that the material has a wide range from around −50 to around +10 ppm / ° C. and has low loss and high dielectric constant.
【００１６】[0016]
【表１】 [Table 1]
【００１７】[0017]
【発明の効果】この発明による誘電体磁器組成物は、１
０ＧＨｚにおけるＱは３０００〜１１５００、τｆ −
５０〜＋１０ｐｐｍ／℃、εｒ ２６〜２９となり、
従来の誘電体磁器組成物と同等またはそれ以上の特性の
ものが得られ、焼成時においても、内質均一なセラミッ
クスを安定的に得ることができる。The dielectric ceramic composition according to the present invention is
Q at 0 GHz is 3000 to 11500, τf −
50 to +10 ppm / ° C., εr 26 to 29,
It is possible to obtain a ceramic having a characteristic equal to or better than that of a conventional dielectric ceramic composition, and it is possible to stably obtain a ceramic having a uniform internal quality even during firing.
Claims (1)
組成からなることを特徴とする電子デバイス用誘電体磁
器組成物。 Ｘ＋Ｙ＝１ ０．３≦Ｘ＜１ ０．７≧Ｙ＞０1. A basic composition represented as XSr (1 / 2Ga · 1 / 2Ta) O 3 -YBa (1 / 2Ga · 1 / 2Ta) O 3, X, Y satisfies the following values to limit the composition ranges A dielectric porcelain composition for electronic devices, which is composed of a composition. X + Y = 1 0.3 ≦ X < 1 0.7 ≧ Y > 0
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3074474A JP2684255B2 (en) | 1991-03-13 | 1991-03-13 | Dielectric porcelain composition for electronic devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3074474A JP2684255B2 (en) | 1991-03-13 | 1991-03-13 | Dielectric porcelain composition for electronic devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04285049A JPH04285049A (en) | 1992-10-09 |
| JP2684255B2 true JP2684255B2 (en) | 1997-12-03 |
Family
ID=13548296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3074474A Expired - Fee Related JP2684255B2 (en) | 1991-03-13 | 1991-03-13 | Dielectric porcelain composition for electronic devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2684255B2 (en) |
-
1991
- 1991-03-13 JP JP3074474A patent/JP2684255B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04285049A (en) | 1992-10-09 |
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