JP2679338B2 - Semiconductor element mounting structure - Google Patents

Semiconductor element mounting structure

Info

Publication number
JP2679338B2
JP2679338B2 JP2054225A JP5422590A JP2679338B2 JP 2679338 B2 JP2679338 B2 JP 2679338B2 JP 2054225 A JP2054225 A JP 2054225A JP 5422590 A JP5422590 A JP 5422590A JP 2679338 B2 JP2679338 B2 JP 2679338B2
Authority
JP
Japan
Prior art keywords
semiconductor element
main surface
pair
wafer
pads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2054225A
Other languages
Japanese (ja)
Other versions
JPH03255656A (en
Inventor
範幸 松井
貴子 桝本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2054225A priority Critical patent/JP2679338B2/en
Publication of JPH03255656A publication Critical patent/JPH03255656A/en
Application granted granted Critical
Publication of JP2679338B2 publication Critical patent/JP2679338B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】 〔概 要〕 各種電子機器の構成に広く使用されるプリント板に半
導体素子を立体的に実装する構造に関し、 ウエハースケールに形成した半導体素子と接続基板に
設けたパッドを容易に接続できるとともに、ウエハース
ケールを自動的に一定ピッチで架設することができる新
しい半導体素子の実装構造の提供を目的とし、 主面側に各種半導体素子を立体的に高密度実装するマ
ザーボードと、絶縁板の一面に複数個のパッドを上下方
向へ一定ピッチとなるよう配設し、当該パッドと導通す
る配線パターンを上下方向の両側縁まで形成して、上下
端面を互いに反対方向へ傾けて上記マザーボードの主面
に平行に立設する一対の接続基板と、前記立設した一対
の該接続基板の間で上下方向へ一定ピッチ架設されるよ
うに成形した絶縁基体の主面に、多数個の上記半導体素
子を高密度に形成したウエハースケールとからなり、上
記パッドを互いに内側にして上端側が互いに拡幅するよ
う一対の該接続基板を上記マザーボードの主面に立設
し、当該接続基板の間に上記半導体素子の形成面を上側
にして該ウエハースケールを順次架設するとともに、該
半導体素子と該パッドを長さの異なる各ボンディングワ
イヤで接続する。
DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a structure for three-dimensionally mounting a semiconductor element on a printed board that is widely used in the construction of various electronic devices, including a semiconductor element formed on a wafer scale and a pad provided on a connection board. With the aim of providing a mounting structure for a new semiconductor element that can be easily connected and at which a wafer scale can be installed automatically at a fixed pitch, a motherboard on which various semiconductor elements are three-dimensionally and densely mounted on the main surface side, A plurality of pads are arranged on one surface of the insulating plate so as to have a constant pitch in the vertical direction, wiring patterns that are electrically connected to the pads are formed up to both side edges in the vertical direction, and upper and lower end surfaces are inclined in opposite directions to each other. Molded so as to be vertically erected at a constant pitch between a pair of connection boards standing parallel to the main surface of the motherboard and the pair of standing connection boards. On the main surface of the insulating substrate, a wafer scale in which a large number of semiconductor elements are densely formed is formed on the main surface of the insulating substrate, and the pair of connection boards are formed on the main surface of the mother board such that the pads are inside each other and the upper ends are widened to each other. The wafer scale is sequentially erected between the connection substrates with the formation surface of the semiconductor element facing upward, and the semiconductor element and the pad are connected by bonding wires having different lengths.

〔産業上の利用分野〕[Industrial applications]

本発明は、各種電子機器の構成に広く使用されるプリ
ント板に半導体素子を立体的に実装する構造に関する。
The present invention relates to a structure in which a semiconductor element is three-dimensionally mounted on a printed board that is widely used in the configuration of various electronic devices.

最近、各種電子機器の小型化と多機能化の要求に伴っ
て、その機器に装着される集積回路基板も小型化と更に
多数個の各種半導体素子の高密度実装することが必要と
なっている。そのためマザーボードの主面に複数対の接
続基板を立設してその対となる接続基板の間に、多数個
の各種半導体チップを絶縁基体の表面に形成した複数枚
のウエハースケールを架設することにより、多数枚のウ
エハースケールをマザーボードの主面に立体的に実装し
ているので、これらのウエハースケールの立体的実装が
容易となる新しい半導体素子の実装構造が要求されてい
る。
Recently, along with the demand for miniaturization and multi-functionalization of various electronic devices, it has become necessary to miniaturize integrated circuit boards mounted on the devices and mount a large number of various semiconductor elements at high density. . Therefore, a plurality of pairs of connection boards are erected on the main surface of the mother board, and a plurality of wafer scales in which a large number of various semiconductor chips are formed on the surface of an insulating substrate are installed between the pairs of connection boards. Since a large number of wafer scales are three-dimensionally mounted on the main surface of the motherboard, a new semiconductor element mounting structure that facilitates the three-dimensional mounting of these wafer scales is required.

〔従来の技術〕[Conventional technology]

従来広く使用されている半導体素子の実装構造は、第
3図に示すように絶縁板2−1の主面側に複数個のパッ
ド2−2を一定寸法,例えば上下方向に2mmピッチで配
設して、当該パッド2−2と導通する図示していない配
線パターンを幅方向の一方の端面まで形成した一対の接
続基板2を、マザーボード1の主面上に前記パッド2−
2が内側で対向するよう一定の間隔で平行に載置してい
る。
As shown in FIG. 3, a mounting structure of a semiconductor element which has been widely used in the past has a plurality of pads 2-2 arranged on the main surface side of an insulating plate 2-1 with a certain size, for example, a vertical pitch of 2 mm. Then, a pair of connection boards 2 having wiring patterns (not shown) electrically connected to the pads 2-2 formed up to one end face in the width direction are provided on the main surface of the motherboard 1 with the pads 2-.
The two are placed in parallel at regular intervals so as to face each other inside.

この一対の接続基板2の内側に、第4図に示す如くシ
リコン等より0.8mmの矩形板成形された絶縁基体3−1
の主面に、メモリ等の各種半導体素子3−2を繰り返し
パターン形成法により高密度に形成した複数枚のウエハ
ースケール3を、前記半導体素子3−2の形成面が上側
となるように一定,例えば2mmのピッチで架設される。
Inside the pair of connection boards 2, an insulating substrate 3-1 is formed by molding a rectangular plate of 0.8 mm from silicon or the like as shown in FIG.
A plurality of wafer scales 3 each having various semiconductor elements 3-2 such as a memory formed in high density by a repeated pattern forming method on a main surface of the same are fixed so that the surface on which the semiconductor elements 3-2 are formed is the upper side. For example, it is installed at a pitch of 2 mm.

そして、第3図に示すように接続基板2の各パッド2
−2とウエハースケール3のそれぞれ半導体素子3−2
をボンディングワイヤ4で接続し、接続基板2の図示し
ていない配線パターンとマザーボード1の主面に形成さ
れた図示していない配線パターンと接続することによ
り、複数枚のウエハースケール3がマザーボード1の主
面側に立体的に実装できるように構成されている。
Then, as shown in FIG. 3, each pad 2 of the connection substrate 2 is
-2 and the semiconductor element 3-2 of the wafer scale 3 respectively
Are connected to each other by bonding wires 4 and are connected to a wiring pattern (not shown) of the connection board 2 and a wiring pattern (not shown) formed on the main surface of the mother board 1. It is configured so that it can be mounted three-dimensionally on the main surface side.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

以上説明した従来の半導体素子の実装構造で問題とな
るのは、第3図に示すようにパッド2−2を互いに内側
にして平行に載置された一対の接続基板2間に、半導体
素子3−2の形成面が上となるように複数枚のウエハー
スケール3を挿入すると、それぞれウエハースケール3
の半導体素子3−2形成面と接続基板2のパッド2−2
形成面が直角となるので、その半導体素子3−2とパッ
ド2−2を接続するボンディングワイヤ4の接合が困難
であるとともに、複数枚のウエハースケール3を上下方
向へ一定ピッチで架設することに多くの時間を要すると
いう問題が生じている。
A problem with the conventional mounting structure of the semiconductor element described above is that the semiconductor element 3 is placed between the pair of connection boards 2 placed in parallel with the pads 2-2 inside each other as shown in FIG. -If a plurality of wafer scales 3 are inserted so that the surface on which -2 is formed faces upward,
Semiconductor element 3-2 forming surface and the pad 2-2 of the connection substrate 2
Since the forming surface is at a right angle, it is difficult to join the bonding wire 4 connecting the semiconductor element 3-2 and the pad 2-2, and at the same time, a plurality of wafer scales 3 are installed vertically at a constant pitch. The problem is that it takes a lot of time.

本発明は上記のような問題点に鑑み、ウエハースケー
ルに形成した半導体素子と接続基板に設けたパッドを容
易に接続できるとともに、ウエハースケールを自動的に
一定ピッチで架設することができる新しい半導体素子の
実装構造の提供を目的とする。
In view of the above problems, the present invention is a new semiconductor device in which a semiconductor device formed on a wafer scale and a pad provided on a connection substrate can be easily connected and the wafer scale can be automatically installed at a constant pitch. It is intended to provide the implementation structure of.

〔課題を解決するための手段〕[Means for solving the problem]

本発明は、第1図に示すように主面側に各種半導体素
子を立体的に高密度実装するマザーボード1と、絶縁板
12−1の一面に複数個のパッド12−2を上下方向へ一定
ピッチとなるよう配設し、当該パッド12−2と導通する
配線パターンを上下方向の両側縁まで形成して、上下端
面を互いに反対方向へ傾けて上記マザーボード1の主面
に平行に立設する一対の接続基板12と、前記立設した一
対の該接続基板12の間で上下方向へ一定ピッチ架設され
るように成形した絶縁基体13−1,23−1,33−1の主面
に、多数個の上記半導体素子13−2を高密度に形成した
ウエハースケール13,23,33とからなり、 上記パッド12−2を互いに内側にして上端側が互いに
拡幅するよう一対の該接続基板12を上記マザーボード1
の主面に立設し、当該接続基板12の間に上記半導体素子
13−2の形成面を上側にして該ウエハースケール13,23,
33を順次架設するとともに、該半導体素子13−2と該パ
ッド12−2を長さの異なる各ボンディングワイヤ14で接
続する。
The present invention, as shown in FIG. 1, includes a mother board 1 on which various semiconductor elements are three-dimensionally and densely mounted on the main surface side, and an insulating plate.
A plurality of pads 12-2 are arranged on one surface of 12-1 at a constant pitch in the vertical direction, and wiring patterns that are electrically connected to the pads 12-2 are formed up to both side edges in the vertical direction, and the upper and lower end surfaces are formed. Molded so as to be vertically erected at a constant pitch between a pair of connection boards 12 that are inclined in opposite directions and are erected parallel to the main surface of the motherboard 1 and the pair of connection boards 12 that are erected. The insulating bases 13-1, 23-1, 33-1 are composed of a wafer scale 13, 23, 33 on the main surface of which a large number of semiconductor elements 13-2 are formed at high density. The mother board 1 is provided with a pair of the connection boards 12 so that the upper end sides of the connection boards are widened so that they are inside each other.
The semiconductor element is erected on the main surface of the
With the formation surface of 13-2 facing upward, the wafer scales 13, 23,
33 are sequentially installed, and the semiconductor element 13-2 and the pad 12-2 are connected by bonding wires 14 having different lengths.

また、第2図に示すように一対の該接続基板12と複数
枚のウエハースケール13,23,33により形成された梯形断
面状のユニットを、前記梯形断面が正,逆交互となるよ
うにマザーボード1の主面に平行に配設して、当該マザ
ーボード1に多数個の上記半導体素子13−2を立体的に
実装する。
Further, as shown in FIG. 2, a unit having a trapezoidal cross section formed by a pair of the connection substrates 12 and a plurality of wafer scales 13, 23, and 33 is provided on a mother board so that the trapezoidal cross sections are alternated in forward and reverse directions. A plurality of semiconductor elements 13-2 are three-dimensionally mounted on the mother board 1 by arranging them in parallel with the main surface of 1.

〔作 用〕(Operation)

本発明では、第1図に示すようにパッド12−2を互い
に内側にして上部が拡幅するように一対の接続基板12を
平行に支持し、この対向した接続基板12の内部に狭幅の
ウエハースケール13から順次拡幅のウエハースケール2
3,33を挿入することにより、そのウエハースケール13,2
3,33は自動的に上下へ一定ピッチで架設されるととも
に、それぞれのウエハースケール13,23,33の半導体素子
13−2配設面と接続基板12のパッド12−2配設面は鈍角
となるから、ボンディングワイヤ14によるウエハースケ
ール13,23,33の各半導体素子13−2と前記接続基板12の
各パッド12−2との接続を容易にすることが可能とな
る。
According to the present invention, as shown in FIG. 1, a pair of connection boards 12 are supported in parallel so that the pads 12-2 are located inside each other and the upper portions are widened. Wafer scale 2 that gradually expands from scale 13
Wafer scale 13,2 by inserting 3,33
3,33 are automatically installed vertically at a fixed pitch, and semiconductor elements of each wafer scale 13,23,33 are installed.
Since the arrangement surface 13-2 and the pad 12-2 of the connection board 12 form an obtuse angle, each semiconductor element 13-2 of the wafer scales 13, 23, 33 by the bonding wire 14 and each pad of the connection board 12 are formed. It is possible to easily connect to 12-2.

〔実 施 例〕〔Example〕

以下第1図および第2図について本発明の実施例を説
明する。
Hereinafter, an embodiment of the present invention will be described with reference to FIGS. 1 and 2.

第1図は本発明の一実施例による半導体素子の実装構
造を示す図、第2図は本実施例のマザーボード実装の断
面図を示し、図中において、第3図と同一部材には同一
記号が付してあるが、その他の12はマザーボードに立設
して複数枚をウエハースケールを立体的に保持する接続
基板,13,23,33は各種半導体素子を高密度に形成したウ
エハースケール、14はウエハースケールの半導体素子と
接続基板の配線パターンを接続するボンディングワイヤ
である。
FIG. 1 is a diagram showing a mounting structure of a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a sectional view of a mother board mounting according to the present embodiment. In FIG. The other 12 are connection boards that stand upright on a mother board and hold a plurality of wafer scales three-dimensionally, 13, 23, 33 are wafer scales in which various semiconductor elements are formed in high density, and 14 Is a bonding wire that connects the wafer-scale semiconductor element and the wiring pattern of the connection substrate.

接続基板12は、第1図に示すようにマザーボード1の
主面上で上端面が互いに拡幅する,例えば60゜の仰角で
平行に支持した際に、上下方向へ一定寸法,例えば2mm
ピッチとなるように複数個のパッド12−2を絶縁板12−
1の内面側に配設して、当該パッド12−2と導通する図
示していない配線パターンを形成したプリント板であ
る。
As shown in FIG. 1, the connection board 12 has a fixed upper and lower dimension, for example, 2 mm, when the upper end surfaces of the main surface of the mother board 1 are widened to each other, for example, when they are supported in parallel at an elevation angle of 60 °.
Insulating plate 12-
1 is a printed board which is arranged on the inner surface side of 1 and has a wiring pattern (not shown) which is electrically connected to the pad 12-2.

ウエハースケール13,23,33は、上端面が互いに拡幅す
る仰角で平行に支持した上記接続基板12間に架設した際
に、上下方向へ互いに一定寸法,例えば2mmピッチとな
る幅にシリコン等よりなる薄板を成形した絶縁基体13−
1,23−1,33−1の主面に、従来のウエハースケールと同
様な繰り返しパターン形成法によりメモリ等の各種半導
体素子13−2を高密度に形成したものである。
The wafer scales 13, 23, 33 are made of silicon or the like in a vertical dimension when they are installed between the connection substrates 12 supported in parallel at an elevation angle where the upper ends of the wafers are widened. Insulating base 13-
Various semiconductor elements 13-2 such as a memory are formed in high density on the main surfaces of 1,23-1, 33-1 by a repeating pattern forming method similar to the conventional wafer scale.

上記部材を使用した半導体素子の実装構造は、第1図
に示すように2枚の接続基板12の図示していないパッド
を互いに内側にして上部が拡幅するように60゜の仰角で
平行に支持し、この対向した接続基板12の内部に狭幅の
ウエハースケール13から順次拡幅のウエハースケール2
3,33を架設する。このウエハースケール13,23,33の各半
導体素子13−2と前記接続基板12の各パッドとを長さの
異なる各ボンディングワイヤ14で接続することにより、
2枚の接続基板12の最上下に架設したウエハースケール
13,33で断面が逆梯形状となったユニットを形設する。
As shown in FIG. 1, the mounting structure of a semiconductor device using the above members is supported in parallel at an elevation angle of 60 ° so that the pads (not shown) of the two connection boards 12 are inside each other and the upper portions are widened. Then, inside the facing connection substrate 12, the wafer scale 13 having a narrow width is sequentially expanded to the wafer scale 2 having a wide width.
Build 3,33. By connecting the respective semiconductor elements 13-2 of the wafer scales 13, 23, 33 and the respective pads of the connection substrate 12 with the respective bonding wires 14 having different lengths,
Wafer scale erected at the top of the two connecting substrates 12
At 13,33, a unit with an inverted ladder cross section is formed.

この逆梯形断面に形成されたユニットをマザーボード
1の主面に平行に載置して、その図示していない配線パ
ターンと前記ウエハースケール13,23,33の各半導体素子
13−2と接続した接続基板12の配線パターンを接続する
ことにより、このマザーボード1の主面に多数枚のウエ
ハースケール13,23,33を装着できるように構成する。
The unit formed in the inverted trapezoidal cross section is placed parallel to the main surface of the mother board 1, and the wiring pattern (not shown) and the semiconductor elements of the wafer scales 13, 23, 33 are placed.
A large number of wafer scales 13, 23, 33 can be mounted on the main surface of the mother board 1 by connecting the wiring patterns of the connection board 12 connected to 13-2.

また、第2図に示すように一対の接続基板12の間にウ
エハースケール13,23,33を架設して梯形断面となったユ
ニットを、上記マザーボード1の主面に梯形断面が正,
逆交互(梯形断面の上下が互いに反対)となるように複
数個のユニットを平行に載置して、そのマザーボード1
の配線パターンと各接続基板12の配線パターンを接続し
ても良い。
Further, as shown in FIG. 2, a unit having a trapezoidal cross section in which wafer scales 13, 23 and 33 are erected between a pair of connection boards 12 has a trapezoidal cross section on the main surface of the motherboard 1.
A plurality of units are placed in parallel so that they are inverted alternately (upper and lower sides of the trapezoidal cross section), and the motherboard 1
The wiring pattern of (4) and the wiring pattern of each connection board 12 may be connected.

その結果、対向する接続基板12の間に一定のピッチで
ウエハースケール13,23,33が自動的に架設されるととも
に、それぞれのウエハースケール13,23,33と接続基板12
で形成される角度は鈍角となるので、ボンディングワイ
ヤ14によるウエハースケール13,23,33の各半導体素子13
−2と接続基板12の各パッド12−2との接続を容易にす
ることができる。
As a result, the wafer scales 13, 23, 33 are automatically installed at a constant pitch between the connection substrates 12 facing each other, and the wafer scales 13, 23, 33 and the connection substrates 12 are also installed.
Since the angle formed by is an obtuse angle, each semiconductor element 13 of the wafer scales 13, 23, 33 by the bonding wire 14 is formed.
-2 and each pad 12-2 of the connection substrate 12 can be easily connected.

以上、図示実施例に基づき説明したが、本発明は上記
実施例の態様のみに限定されるものでなく、例えば一対
の接続基板によりパッケージタイプの半導体装置を実装
した複数枚のプリント板を立体的に架設してマザーボー
ドに実装しても良く、ウエハースケールに限定しなくて
も良い。
Although the present invention has been described above based on the illustrated embodiment, the present invention is not limited to the embodiment described above. For example, a plurality of printed boards on which a package type semiconductor device is mounted by a pair of connection boards are three-dimensionally formed. It may be installed on a mother board and mounted on a mother board, and need not be limited to a wafer scale.

〔発明の効果〕〔The invention's effect〕

以上の説明から明らかなように本発明によれば極めて
簡単な構成で、複数枚のウエハースケールを自動的に対
向する接続基板の間に一定ピッチで架設されるととも
に、ボンディングワイヤによるウエハースケールの各半
導体素子と接続基板の各パッドとの接続が容易になる等
の利点があり、著しい経済的及び、信頼性向上の効果が
期待できる半導体素子の実装構造を提供することができ
る。
As is clear from the above description, according to the present invention, with a very simple structure, a plurality of wafer scales are automatically erected at a constant pitch between opposing connecting substrates, and each of the wafer scales is formed by bonding wires. It is possible to provide a mounting structure of a semiconductor element, which has advantages such as easy connection between the semiconductor element and each pad of the connection substrate, and which can be expected to achieve significant economic and reliability improvement effects.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の一実施例による半導体素子の実装構造
を示す斜視図、 第2図は本実施例のマザーボード実装を示す断面図、 第3図は従来の半導体素子の実装構造を示す模式的正面
図、 第4図はウエハースケールを示す斜視図である。 図において、 1はマザーボード、 12は接続基板、 12−1は絶縁板、12−2はパッド、 13,23,33はウエハースケール、 13−1,23−1,33−1は絶縁基体、 13−2は半導体素子、 14はボンディングワイヤ、 を示す。
FIG. 1 is a perspective view showing a semiconductor element mounting structure according to an embodiment of the present invention, FIG. 2 is a sectional view showing a mother board mounting of the present embodiment, and FIG. 3 is a schematic view showing a conventional semiconductor element mounting structure. FIG. 4 is a perspective view showing a wafer scale. In the figure, 1 is a mother board, 12 is a connection board, 12-1 is an insulating plate, 12-2 is a pad, 13,23,33 are wafer scales, 13-1, 23-1, 33-1 are insulating bases, 13 Reference numeral -2 is a semiconductor element, and 14 is a bonding wire.

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】主面側に各種半導体素子を立体的に高密度
実装するマザーボード(1)と、 絶縁板(12−1)の一面に複数個のパッド(12−2)を
上下方向へ一定ピッチとなるよう配設し、当該パッド
(12−2)と導通する配線パターンを上下方向の両側縁
まで形成して、上下端面を互いに反対方向へ傾けて上記
マザーボード(1)の主面に平行に立設する一対の接続
基板(12)と、 前記立設した一対の該接続基板(12)の間で上下方向へ
一定ピッチ架設されるように成形した絶縁基体(13−1,
23−1,33−1)の主面に、多数個の上記半導体素子(13
−2)を高密度に形成したウエハースケール(13,23,3
3)とからなり、 上記パッド(12−2)を互いに内側にして上端側が互い
に拡幅するよう一対の該接続基板(12)を上記マザーボ
ード(1)の主面に立設し、当該接続基板(12)の間に
上記半導体素子(13−2)の形成面を上側にして該ウエ
ハースケール(13,23,33)を順次架設するとともに、該
半導体素子(13−2)と該パッド(12−2)を長さの異
なる各ボンディングワイヤ(14)で接続するように構成
したことを特徴とする半導体素子の実装構造。
1. A mother board (1) on which various semiconductor elements are three-dimensionally and densely mounted on a main surface side, and a plurality of pads (12-2) are vertically fixed on one surface of an insulating plate (12-1). Wiring patterns that are arranged at a pitch and that are electrically connected to the pads (12-2) are formed up to both side edges in the vertical direction, and upper and lower end surfaces are inclined in opposite directions and parallel to the main surface of the motherboard (1). And a pair of connection boards (12) standing upright on the insulating base (13-1, molded to be vertically erected at a constant pitch between the pair of standing connection boards (12).
23-1, 33-1) has a large number of semiconductor elements (13
-2) with high density formed on wafer scale (13,23,3
3), the pair of connection boards (12) are erected on the main surface of the mother board (1) so that the pads (12-2) are inside each other and the upper ends thereof are widened to each other. 12), the wafer scale (13, 23, 33) is sequentially installed between the semiconductor element (13-2) and the pad (12-) with the formation surface of the semiconductor element (13-2) facing upward. 2. A semiconductor element mounting structure, characterized in that 2) is connected by bonding wires (14) having different lengths.
【請求項2】一対の上記接続基板(12)と複数枚の上記
ウエハースケール(13,23,33)により形成された梯形断
面状のユニットを、前記梯形断面が正,逆交互となるよ
うに上記マザーボード(1)の主面に平行に配設して、
当該マザーボード(1)に多数個の上記半導体素子(13
−2)を立体的に実装したことを特徴とする請求範囲1
項記載の半導体素子の実装構造。
2. A unit having a trapezoidal cross section formed by a pair of the connection boards (12) and a plurality of the wafer scales (13, 23, 33) is arranged so that the trapezoidal cross sections are alternated in forward and reverse directions. Arranged in parallel with the main surface of the motherboard (1),
A large number of the semiconductor elements (13
-2) is three-dimensionally mounted.
The semiconductor element mounting structure according to the item.
JP2054225A 1990-03-05 1990-03-05 Semiconductor element mounting structure Expired - Fee Related JP2679338B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2054225A JP2679338B2 (en) 1990-03-05 1990-03-05 Semiconductor element mounting structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2054225A JP2679338B2 (en) 1990-03-05 1990-03-05 Semiconductor element mounting structure

Publications (2)

Publication Number Publication Date
JPH03255656A JPH03255656A (en) 1991-11-14
JP2679338B2 true JP2679338B2 (en) 1997-11-19

Family

ID=12964601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2054225A Expired - Fee Related JP2679338B2 (en) 1990-03-05 1990-03-05 Semiconductor element mounting structure

Country Status (1)

Country Link
JP (1) JP2679338B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6573460B2 (en) 2001-09-20 2003-06-03 Dpac Technologies Corp Post in ring interconnect using for 3-D stacking
US6573461B2 (en) 2001-09-20 2003-06-03 Dpac Technologies Corp Retaining ring interconnect used for 3-D stacking

Also Published As

Publication number Publication date
JPH03255656A (en) 1991-11-14

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