JP2674889B2 - Semiconductor wafer cutting method - Google Patents
Semiconductor wafer cutting methodInfo
- Publication number
- JP2674889B2 JP2674889B2 JP4149091A JP4149091A JP2674889B2 JP 2674889 B2 JP2674889 B2 JP 2674889B2 JP 4149091 A JP4149091 A JP 4149091A JP 4149091 A JP4149091 A JP 4149091A JP 2674889 B2 JP2674889 B2 JP 2674889B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- cutting
- flat ring
- wafer
- cutting method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Dicing (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体ウェハの切削方法
に関し、特に半導体ウェハに粘着シートを貼り付けフラ
ットリングに固定する半導体ウェハの切削方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer cutting method, and more particularly to a semiconductor wafer cutting method in which an adhesive sheet is attached to a semiconductor wafer and fixed to a flat ring.
【0002】[0002]
【従来の技術】従来の半導体ウェハの切削方法は、図3
に示すように、半導体ウェハ1に粘着シート2を貼り付
け、この粘着シート2をフラットリング6に固定し、更
にこの半導体ウェハ1をウェハ吸着台7で固定したの
ち、切削ブレード3で切削を行っていた。この場合フラ
ットリング6はウェハ吸着台7より引き下げられた状態
で半導体ウェハは切削されていた。2. Description of the Related Art A conventional semiconductor wafer cutting method is shown in FIG.
As shown in FIG. 3, the adhesive sheet 2 is attached to the semiconductor wafer 1, the adhesive sheet 2 is fixed to the flat ring 6, the semiconductor wafer 1 is further fixed by the wafer suction table 7, and then cut by the cutting blade 3. Was there. In this case, the semiconductor wafer was cut while the flat ring 6 was pulled down from the wafer suction table 7.
【0003】[0003]
【発明が解決しようとする課題】上述した従来の半導体
ウェハの切削方法においては、切削部が平面で構成され
ている為、切削中の切削屑の排除がスムーズに行なわれ
ない。特に半導体ウェハが厚い場合や切削ブレードが厚
い場合では、半導体ウェハ上に切削屑を含んだ水が滞留
してしまい切削途中に半導体ウェハ表面へ沈澱し付着す
るため、水洗しても完全に除去できず、半導体ウェハが
汚染されるという問題点があった。又、水による切削ブ
レードの冷却効果も不十分となり、異常摩耗や最悪の場
合途中破損を誘発し、製品歩留の低下を来たすという問
題点もあった。In the above-mentioned conventional method for cutting a semiconductor wafer, since the cutting portion is formed by a flat surface, it is not possible to smoothly remove the cutting chips during cutting. Especially when the semiconductor wafer is thick or the cutting blade is thick, water containing cutting chips stays on the semiconductor wafer and settles on the surface of the semiconductor wafer during cutting and can be completely removed even by washing with water. However, there is a problem that the semiconductor wafer is contaminated. In addition, the cooling effect of the cutting blade by water becomes insufficient, which causes abnormal wear and, in the worst case, intermediate damage, resulting in a decrease in product yield.
【0004】[0004]
【課題を解決するための手段】本発明の半導体ウェハの
切削方法は、半導体ウェハを吸着後、フラットリングを
半導体ウェハの表面より上方に固定したのち切削を行う
ものである。According to the method of cutting a semiconductor wafer of the present invention, after the semiconductor wafer is sucked, the flat ring is fixed above the surface of the semiconductor wafer and then the cutting is performed.
【0005】[0005]
【実施例】次に本発明について図面を参照して説明す
る。図1は本発明の第1の実施例を説明するための半導
体ウェハ近傍の断面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a sectional view of the vicinity of a semiconductor wafer for explaining the first embodiment of the present invention.
【0006】図1に示すように、半導体ウェハ1は粘着
シート2に貼り付けられ、この粘着シート2はクランプ
5に固定されたフラットリング6に固定されている。そ
してこの半導体ウェハ1はウェハ吸着台7に固定された
のち切削ブレード3により切削されるが、この時フラッ
トリング6のクランプ5は、半導体ウェハ1の表面より
持ち上がった位置に固定される。このため切削ブレード
3の冷却や洗浄の為にそそがれる水がフラットリング6
の高さまで溜まり水溜り4が形成される。As shown in FIG. 1, the semiconductor wafer 1 is attached to an adhesive sheet 2, and the adhesive sheet 2 is fixed to a flat ring 6 fixed to a clamp 5. The semiconductor wafer 1 is fixed to the wafer suction table 7 and then cut by the cutting blade 3. At this time, the clamp 5 of the flat ring 6 is fixed at a position lifted from the surface of the semiconductor wafer 1. For this reason, the water that is poured to cool and clean the cutting blade 3 is flat ring 6
The water pool 4 is formed up to the height of.
【0007】このように第1の実施例によれば、半導体
ウェハ1上に水溜り4が形成されるため、切削屑が半導
体ウェハの表面に付着することが少くなる。また、たと
え付着しても水洗工程でその除去は容易なものとなる。As described above, according to the first embodiment, since the water pool 4 is formed on the semiconductor wafer 1, cutting debris is less likely to adhere to the surface of the semiconductor wafer. Further, even if they are attached, they can be easily removed by a washing process.
【0008】図2は本発明の第2の実施例を説明するた
めの半導体ウェハ近傍の断面図である。この第2の実施
例においてはウェハ吸着台7Aが半導体ウェハ1の径よ
り大きなものを使用する。この事により切削中の切削ブ
レード3の粘着シート2からの逃げ量が最小値で切削可
能な為、第1の実施例の切削時間より短縮した切削ブレ
ードの動作が可能である。FIG. 2 is a sectional view in the vicinity of a semiconductor wafer for explaining the second embodiment of the present invention. In the second embodiment, the wafer suction table 7A having a diameter larger than that of the semiconductor wafer 1 is used. As a result, the cutting blade 3 can be cut with a minimum amount of escape from the adhesive sheet 2 during cutting, so that the cutting blade can operate in a shorter time than the cutting time of the first embodiment.
【0009】[0009]
【発明の効果】以上説明したように本発明は、半導体ウ
ェハ表面よりフラットリングを上方に固定することによ
り、切削中に使用する水がフラットリング内に確保され
水溜りとなるため、切削中に発生する屑を半導体ウェハ
表面に沈澱させることなく水中に浮遊させることができ
る。従って切削途中で半導体ウェハ表面に付着しずらく
なり汚染の問題がほとんど皆無となる。又フラットリン
グ内に溜まる水は切削ブレードが回転するために随時対
流しており、屑が沈澱しにくい状態となり、フラットリ
ング上面に舞い上げられたところでオーバーフローす
る。この現象によりフラットリング内に溜まる水は随時
入れかわっているため、後の洗浄工程で簡単に屑を洗い
流すことが可能となる。As described above, according to the present invention, by fixing the flat ring above the surface of the semiconductor wafer, the water used during cutting is secured in the flat ring and becomes a water pool. The generated dust can be suspended in water without settling on the semiconductor wafer surface. Therefore, it hardly adheres to the surface of the semiconductor wafer during cutting, and the problem of contamination is almost eliminated. Further, the water accumulated in the flat ring is convected at any time due to the rotation of the cutting blade, which makes it difficult for dust to settle and overflows when it is floated up on the upper surface of the flat ring. Due to this phenomenon, the water accumulated in the flat ring is replaced at any time, so that it becomes possible to easily wash away the debris in the subsequent washing step.
【0010】更に切削部が常時水中にあるため、切削ブ
レードの冷却効果が優れ、異常摩耗や、途中破損等の不
具合を緩和できるという効果もある。Furthermore, since the cutting portion is always under water, the cooling effect of the cutting blade is excellent, and there is also an effect that problems such as abnormal wear and breakage on the way can be alleviated.
【図1】本発明の第1の実施例を説明するためのウェハ
吸着台近傍の断面図。FIG. 1 is a sectional view of the vicinity of a wafer suction table for explaining a first embodiment of the present invention.
【図2】本発明の第2の実施例を説明するためのウェハ
吸着台近傍の断面図。FIG. 2 is a sectional view of the vicinity of a wafer suction table for explaining the second embodiment of the present invention.
【図3】従来の半導体ウェハの切削方法を説明するため
のウェハ吸着台近傍の断面図FIG. 3 is a sectional view of the vicinity of a wafer suction table for explaining a conventional semiconductor wafer cutting method.
1 半導体ウェハ 2 粘着シート 3 切削ブレード 4 水溜り 5 クランプ 6 フラットリング 7,7A ウェハ吸着部 1 Semiconductor Wafer 2 Adhesive Sheet 3 Cutting Blade 4 Water Pool 5 Clamp 6 Flat Ring 7, 7A Wafer Suction Section
Claims (1)
ラットリングにて固定し、次でウェハ吸着台で半導体ウ
ェハを固定したのち切削ブレードで半導体ウェハを切削
する半導体ウェハの切削方法において、前記フラットリ
ングを半導体ウェハの表面より上方に固定したのち切削
を行なうことを特徴とする半導体ウェハの切削方法。1. A method for cutting a semiconductor wafer, comprising: sticking an adhesive sheet to a semiconductor wafer, fixing the same with a flat ring, fixing the semiconductor wafer with a wafer suction table, and then cutting the semiconductor wafer with a cutting blade. A method for cutting a semiconductor wafer, which comprises fixing the above to a surface of the semiconductor wafer and then cutting.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4149091A JP2674889B2 (en) | 1991-03-07 | 1991-03-07 | Semiconductor wafer cutting method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4149091A JP2674889B2 (en) | 1991-03-07 | 1991-03-07 | Semiconductor wafer cutting method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04278563A JPH04278563A (en) | 1992-10-05 |
JP2674889B2 true JP2674889B2 (en) | 1997-11-12 |
Family
ID=12609796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4149091A Expired - Fee Related JP2674889B2 (en) | 1991-03-07 | 1991-03-07 | Semiconductor wafer cutting method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2674889B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011124264A (en) * | 2009-12-08 | 2011-06-23 | Disco Abrasive Syst Ltd | Wafer processing method |
-
1991
- 1991-03-07 JP JP4149091A patent/JP2674889B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH04278563A (en) | 1992-10-05 |
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