JP2671683B2 - Method for manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a film carrier type semiconductor device.

[0002]

2. Description of the Related Art A conventional method of manufacturing a film carrier type semiconductor device will be described with reference to FIGS.

As shown in the plan views of FIGS. 9A and 9B and the sectional view taken along the line FF, insulation of polyimide or the like having a sprocket hole 9 for carrying and positioning and a device hole 3 into which the semiconductor chip 1 is inserted A tape-shaped film carrier 1 is prepared by adhering a metal foil such as copper on the film and forming inner leads 5, outer leads 6 and a pad 7 for electrical selection having a desired shape by etching the metal foil.
0.

Next, a coating layer 15 made of a polyimide resin or the like for improving the adhesiveness is formed on the suspender 8 which is a film frame for supporting the inner leads 5, if necessary.
A film carrier 10 on which is formed and a semiconductor chip 1 in which bumps 2 which are metal projections are provided in advance on electrode terminals are prepared. Next, the tips of the inner leads 5 of the film carrier 10 and the bumps 2 of the semiconductor chip 1 are connected by a thermocompression bonding method or a eutectic method.

Next, resin sealing is performed by the direct transfer molding method. In this method, 8 parts of the suspenders including the coating layer 15 are sandwiched by transfer mold dies, and a resin 16 is poured to perform transfer molding.
It forms a package. Further, in the state of the film carrier tape, a contactor is brought into contact with the electric selection pad 7 to perform electric selection and device characteristic test to complete the semiconductor device.

In the method of manufacturing a semiconductor device of the film carrier type as described above, the bonding can be performed at one time regardless of the number of leads, so that the speed is high, and since the film carrier tape is used, the assembly such as bonding and the like can be performed. It has advantages such as that the electric sorting work is automated and mass productivity is excellent, and because the semiconductor device is protected by resin by transfer molding, it can be packaged and handled in the same way as the conventional transfer mold type semiconductor device. Have

[0007]

This conventional film carrier type semiconductor device in which resin encapsulation is carried out by the direct transfer molding method is more advantageous than the resin encapsulation method in which a liquid resin is dropped on a chip. There are advantages such as a uniform outer shape.

However, there is a problem that the semiconductor chip is inclined due to the resin flow at the time of molding and a void is generated on the surface because of the thin package form. Further, since high-pressure mold clamping is required, there is a problem that the film carrier type semiconductor device after the mold clamping is warped due to insufficient strength of the film such as polyimide, and automation of the work becomes difficult.

[0009]

According to a method of manufacturing a semiconductor device of the present invention, a device hole provided in an insulating film, an outer lead hole provided in the peripheral portion of the device hole, and an outer lead hole are surrounded. Film carrier having at least a suspended suspender and inner leads made of metal foil integrally formed with outer leads provided around the device hole, semiconductor chips with bumps formed, and ventilation during transfer molding. A step of preparing a cover tape provided with a slit serving as a mouth, and connecting the bumps of the semiconductor chip to the tip end portions of the inner leads extending in the device holes of the film carrier, and then the suspenders. Attaching the cover tape on top of the film carrier The transfer molding die after punched a portion corresponding to the gate portion of the transfer mold the semiconductor chip in which a step of resin-sealing.

[0010]

Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a top view of a film carrier used in the first embodiment of the present invention, showing a case where semiconductor chips are connected.

In FIG. 1, a film carrier 10 is provided on an insulating film such as a polyimide film having a sprocket hole 9 for carrying and positioning, a device hole 3 in which the semiconductor chip 1 is inserted, and an outer lead hole 4 provided around the device hole 3. A metal foil such as copper having a thickness of about 35 μm is adhered, and the metal foil is formed by etching or the like to form inner leads 5 and outer leads 6 having a desired shape and pads 7 for electrical selection.

FIGS. 2A to 2C are a top view, a sectional view taken along the line AA and a side view of a cover tape used in the first embodiment of the present invention.

As shown in FIGS. 2 (a) to 2 (c), the cover tape 11 is made of a heat-resistant polyimide tape or the like having a thickness of about 50 μm, and the outer dimensions thereof are the film shown in FIG. It is below the portion surrounded by the outer lead holes 4 of the carrier tape 10. A hole 13 having a size equal to or larger than that of the device hole 3 is provided in the center portion thereof, and the surface of the tape around the hole 13 is provided with a vent hole (air vent) at the time of transfer molding.
A plurality of slits 12 having a width of 500 μm and a depth of about 25 μm are provided.

3 (a) and 3 (b), the semiconductor chip 1 is connected to the carrier tape 10 shown in FIG.
3 is a top view and a cross-sectional view taken along line BB when the cover tape 11 shown in FIG.

FIG. 4 is a sectional view of a transfer mold used in the embodiment. The upper die 21 is provided with a punch 23 for punching out a portion of the film carrier 10 corresponding to the gate portion of the die. The height of the punch 23 is, for example, the film carrier 10 and the cover tape 1.
When the total thickness of 1 and 210 is 210 μm, 210-2
30 μm.

Further, the lower die 22 receives the film carrier 10 punched by the punch 23, and at the time of transfer molding, resin is injected from the gate into the cavity 25.
Groove 24 processed into a desired shape so as to be introduced in the direction of
Is provided. The depth of the groove 24 is 100 μm, for example, a value obtained by subtracting the thickness of the suspender 8 of about 125 μm from the height including the semiconductor chip 1 and the bumps 2.
It is a value that adds the degree, and is the same value as the package depth.

Next, the manufacturing method of the first embodiment will be described.

First, the film carrier 10 shown in FIG.
Then, the semiconductor chip 1 having the bumps 2 shown in FIG. 3 is prepared, and the bumps 2 are connected to the tip end portions of the inner leads 2 extending in the device holes 3 by thermocompression bonding.

Next, as shown in FIGS. 3 (a) and 3 (b),
The cover tape 11 shown in FIG.
Stick it on the top of suspender 8.

Next, the film carrier 10 is aligned and set on the lower mold 22 for transfer molding shown in FIG. Punching the part that was at that time into the gate part of the transfer mold. By this operation, the gate portion 20 of the film carrier 10 shown in FIG. 3A is punched out.

Next, resin molding is carried out in the same manner as in the conventional method, and as shown in FIGS. 5 (a) and 5 (b), the transfer mold package 30 formed by resin-molding the semiconductor chip 1 is transferred. It is formed together with the gate 31.

As described above, according to the first embodiment, the film carrier 10 provided with the cover tape 11 at the time of resin sealing.
The part of the upper die 21 that contacts the punch 23 is punched out and falls into the groove 24 of the lower die 22. Then, when the resin passes through the gate, it passes between the surface portion of the film carrier 10 punched by the punch 23 and the surface portion of the punch 23. Therefore, the resin flows out from the lower mold 22 side toward the semiconductor chip 1 in the cavity 25, but since the cover tape 11 serves as a pedestal for suppressing the inclination of the inner lead 5 and the semiconductor chip 1, the inclination and the warp are caused. It is possible to manufacture a semiconductor device having a highly reliable package with no productivity.

Further, since the air vent formed of the slit 12 is provided on the front side of the film carrier 10, the phenomenon of blocking the air vent on the die side due to the deformation of the film carrier 10 due to the pressure is eliminated, so that the void generation rate can be reduced. Is possible. Furthermore, by changing the shape and thickness of the cover tape 11, the outflow of the resin can be controlled without the need to process the mold side, and the form of the package can be easily changed.

Next, a second embodiment will be described. FIG.
(A)-(c) is the top view of the cover tape used for the 2nd Example of this invention, the DD sectional view and the side view.

In FIGS. 6A to 6C, the cover tape 11A is made of a polyimide tape having a thickness of about 50 μm and having the same outer dimensions as the cover tape 11 shown in FIG. The part is provided with a rectangular groove 14. Then, from this groove 14 to the cover tape 1
A plurality of slits 12A reaching the end of 1A are provided. As shown in FIG. 7, the cover tape 11A configured as described above is attached to the upper portion of the suspender 8 of the carrier tape 10 used in the first embodiment.

Then, the film carrier 10 provided with the cover tape 11A is resin-sealed by using the upper mold 21 and the lower mold 22 as in the manufacturing method of the first embodiment. As shown in the top views of FIGS. 8A and 8B and the sectional view taken along the line EE, the transfer mold package 30A is formed by providing a transfer mold gate 31B.

In the second embodiment, the cover tape 11
Since the size of the groove 14 of A is not particularly limited, the productivity is higher than that of the cover tape 11 used in the first embodiment, and the slit 12A is hardly deformed due to the adhesion between the upper die 21 and the cover tape 11A. Therefore, the air permeability can be improved and the resin can be smoothly distributed.

In the first and second embodiments, the gate portion of the film carrier is punched out at the same time as the transfer sealing. However, only the gate portion may be punched out in advance and then the resin sealing is performed. . In this case, the punch 23 and the groove 24 of the transfer molding die are unnecessary.

[0029]

As described above, according to the present invention, a cover tape provided with a slit serving as a ventilation hole for passing air in a mold at the time of resin sealing is attached to an upper portion of a film carrier to provide a punch. Since a transfer mold package is formed by sandwiching between the upper mold and the lower mold that has grooves, and forming a transfer mold package, it is possible to suppress the occurrence of inclination and warpage of leads and semiconductor chips, and a highly reliable package. There is an effect that a semiconductor device having a form is obtained and work can be easily automated.

Further, since the vent hole is formed on the upper surface of the film carrier, the phenomenon of blocking the vent hole on the mold side due to the deformation of the film carrier due to the pressure is eliminated, and thus the void generation rate can be reduced. .

[Brief description of the drawings]

FIG. 1 is a top view of a film carrier used in a first embodiment of the present invention.

FIG. 2 is a top view, a sectional view, and a side view of a cover tape used in the first embodiment of the present invention.

3A and 3B are a top view and a cross-sectional view of a film carrier in which a semiconductor chip and a cover tape are connected for explaining a first embodiment of the present invention.

FIG. 4 is a sectional view of a mold used in the first embodiment of the present invention.

5A and 5B are a top view and a cross-sectional view of a semiconductor device for explaining a first embodiment of the present invention.

FIG. 6 is a top view, a sectional view, and a side view of a cover tape used in a second embodiment of the present invention.

FIG. 7 is a sectional view of a film carrier in which a semiconductor chip and a cover tape are connected to each other for explaining a second embodiment of the present invention.

8A and 8B are a top view and a cross-sectional view of a film carrier in which a semiconductor chip and a cover tape are connected for explaining a second embodiment of the present invention.

9A and 9B are a top view and a cross-sectional view for explaining a conventional method for manufacturing a semiconductor device.

[Explanation of symbols]

 1 Semiconductor Chip 2 Bump 3 Device Hole 4 Outer Lead Hole 5 Inner Lead 6 Outer Lead 7 Sorting Pad 8 Suspender 9 Sprocket Hole 10 Film Carrier 11, 11A Cover Tape 12, 12A Slit 13 Hole 14 Groove 15 Coating Layer 16 Resin 20 Gate part 21 Upper mold 22 Lower mold 23 Punch 24 Groove 25 Cavity 30,30A Transfer mold package 31,31A Transfer mold gate

Claims (4)

(57) [Claims] 1. A device hole provided in an insulating film, an outer lead hole provided in the peripheral portion of the device hole, a suspender surrounded by the outer lead hole, and an outer lead provided in the peripheral portion of the device hole. And a film carrier having at least an inner lead made of a metal foil integrally formed with,
A step of preparing a semiconductor chip on which a bump is formed and a cover tape provided with a slit that serves as a ventilation hole at the time of transfer molding, and the inner lead of the inner lead provided extending in a device hole of the film carrier. A step of connecting the bumps of the semiconductor chip to the tip and then attaching the cover tape on the suspender, and punching out a portion corresponding to the gate portion in the transfer mold die of the film carrier, and then using the transfer mold die. And a step of resin-sealing the semiconductor chip. 2. An upper die having a punch for punching a film carrier corresponding to a gate portion, and a lower die having a groove for receiving the punched film carrier and introducing a resin into the cavity. The method for manufacturing a semiconductor device according to claim 1, wherein the punching of the film carrier and the resin sealing are continuously performed by using. 3. The method for manufacturing a semiconductor device according to claim 1, wherein an opening substantially equal to the device hole is provided in the center of the cover tape. 4. The method of manufacturing a semiconductor device according to claim 1, wherein a groove connecting to the slit is provided in a central portion of the back surface of the cover tape.