JP2645499B2 - Method for manufacturing semiconductor display device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an insulated gate field effect semiconductor device
The present invention relates to an active matrix type flat display device, and particularly to a color display device, for controlling and displaying each of a group of picture elements arranged in a matrix using an IGF.

The present invention relates to a liquid crystal (LC) having a function of controlling the amount of transmitted light.
D)) Electrochromic (ECD), and electroluminescence (EL), which emits light by itself, a semiconductor device that controls each picture element and the presence or absence of an electric signal by applying a voltage or current to this picture element In particular, the purpose is to control each picture element as an active element by using the IGF.

Conventionally, in such a semiconductor display device, its matrix circuit is shown in FIG. 1. A group of picture elements (10) arranged in a matrix has one IGF (2) and a display element (3) (here, LCD). Are connected in series, the gate electrode of this IGF is arranged in the X direction, and the source and drain are arranged in the Y direction.

However, all sides of the LCD not connected to the IGF are simply kept at the ground level in common, and their voltage levels are common to all elements.

For this reason, the counter electrode (3) of this LCD has only a CTF (light-transmitting conductive film) provided on the entire surface inside the substrate facing the substrate provided with the IGF.

One of the problems of the display device having such a structure is a defect of the IGF generated in the manufacturing process. The types of defects include various factors such as defects due to dust during film formation and defects due to dust mixed in during the photo process.

However, in order to realize a large area and high resolution, even if this defect is a point defect, it must not appear on the display.

It is a first object of the present invention to provide a display device in which a defect of the IGF generated in such a manufacturing process does not affect a display.

On the other hand, in order to form RGB (red, green, and blue primary colors) in pairs with the flat display device having such a structure, the number of active elements is three times as large as that of the monochrome display device. .

In addition, this three-fold integration means that the number of picture elements is 525 x 640 (total
(330K element), and the degree of integration was so high that practical application was impossible.

A second object of the present invention is to eliminate such disadvantages.

In order to achieve the first object, the present invention controls the presence or absence of an electric signal to one of the first electrodes corresponding to each of the picture elements in a picture element group arranged in a matrix on a substrate having an insulating surface. A semiconductor display device, wherein two insulating gate type field effect semiconductor devices are provided for the first electrode, and the defective insulating gate type field effect semiconductor device is removed using laser light. One way as a method
Even if a short or open defect occurs in the IGF,
GF is removed by a laser trimming method, and redundancy is provided so that the display element can be driven only by the other.

In order to achieve the second object, a process requiring precise patterning of IGF (generally using 6 to 8 masks) is performed on one substrate side, and wiring for color identification and its peripheral circuits are formed. It is provided on the other substrate side.

And the CTF which is the picture element electrode connected to one IGF is 1
However, the number of CTFs, which are the other electrodes that face the CTFs in pairs, are three because RGB is provided. As a result, in terms of manufacturing, two independent substrates can be manufactured first, quality inspection can be performed, and non-defective products in each product can be overlapped to produce a final finished product. As a result, the semiconductor display device has a great feature that its yield can be greatly improved.

 Hereinafter, the present invention will be described in more detail with reference to the drawings.

FIG. 2 is a circuit diagram of the present invention made corresponding to the conventional invention of FIG. For the sake of simplicity, the drawing has a 3 × 3 (3 × 3 × 3 when RGB is divided) matrix arrangement.
That is, although there are 27 independent picture elements, there is a great feature that only 9 IGFs are required in the matrix.
FIGS. 4 and 5 show plan and vertical sectional views of an actual picture element group.
As shown in the figure, the interval between the counter electrodes (3) (3 ') (3 "), that is, the interval between (3) (3') (3") (FIGS. 4 (B) and (31)) It can be seen that 5 to 10 μm is sufficient. these
Since the wiring (5) (5 ') (5 ") provided on the IGF is 50 to 100 μm, there is a troublesome surface for the user when viewing the panel, but the number of wide lines is reduced by one in comparison with the conventional method. /
It has the feature of being able to be 3. As a result, it was found that the user did not feel uncomfortable.

In FIG. 2, the active element is one IGF
The source or drain of (2) and the display element (here, LCD) connected to one of them have (1) (1 ') (1 "), and the other is a lead (5) in the Y direction in FIG. (5 ') and (5 "). The gate electrodes of the IGF are connected in the X direction (4) (4 ′) (4 ″).

Further, the opposing electrodes (3), (3 '), (3 ") of the display element are independent of each other, and in FIG. In the drawing, one substrate is provided with a decoder (7), (8) IGF (1) and one electrode of a display element, and is separated into three on the other substrate side. 2 is provided in the X direction, the Y direction, or the oblique direction.In FIG. 2, RGB electrodes and leads connected in the Y direction are provided, and these are connected to a color separation control circuit (decoder) (9). It is connected.

In the circuit of FIG. 2, the electric charge accumulated in the electrode of the display element is converted into a parasitic capacitance (44) between the charge and the gate electrode in the structure of FIG.
Occurs. For this reason, the frequency characteristics become slow. As a result, the LCD does not require high frequency characteristics in this circuit
Is preferably used for a display element.

Fig. 3 is the same as Fig. 2, but the opposing electrodes (3), (3 '), (3 ") of the display element are connected in the X direction.

In FIG. 3, (11) (1
2) (13)... (11 ″) (12 ″) (13 ″) correspond to the horizontal arrangement, and the parasitic capacitance becomes (4
0) (41) increases, but decreases between the gate electrodes. For this reason, the circuit of FIG. 3 is advantageous when an EL element for generating various colors by changing the frequency is provided with a display element.

4 and 5 are plan views of the semiconductor display device of the present invention,
FIG.

This drawing corresponds to the circuit configuration of FIG.

In the drawing, IGF on a substrate (25) with an insulating surface
(2) is a parallel configuration of pairs (pairs) and two IGFs
(2) (2 ') is provided. This is important for increasing the driving stress of the IGF.In addition, even if one of the IGFs causes a short circuit or open defect, the IGF is removed by laser trimming and the display element is driven only by the other. It is something that has sex.

FIG. 4B is a vertical sectional view of the vertical channel type IGF taken along the line AA ′ in FIG. 4A.

In the drawing, the lower electrode (14) of the IGF (2) is connected to the electrode (22) of the display element (1), and the source or drain (1) is formed on the electrode (14) as a laminate having the same shape.
5) (Thickness 500-3000Å) Laminate (16) (Thickness 0.5-5)
μ) (actually using a silicon nitride film), drain or source (17) (thickness 500 to 3000 mm), electrode (18) also serving as a lead in the Y direction (1000 to 5000 mm), interlayer insulating film (1
9) (0.5-3μ) (actually using PIQ) is provided. Further, a non-single-crystal semiconductor (including an amorphous structure) (21) to which hydrogen or a halogen element (preferably fluorine) is added covers these layers to a thickness of 0.1 to 0.4 μ.

The semiconductor (21) is in ohmic contact with the layers (15) and (17) constituting the P or N type source and drain.
This semiconductor layer has a silicon oxide or silicon nitride film (thickness 500 to 3).
000 mm) and a gate electrode (thickness: 300 to 3000 mm) of a semiconductor, chromium, titanium, molybdenum, tungsten or a compound thereof is provided thereon according to (20).
This gate electrode is connected to leads (4), (4 ') and (4 ") constituting a bus line in the X direction.
It has a thickness of 0.5-3μ. The sheet resistance is 0.5Ω / □
It is as follows.

Further, each of the three opposing electrodes on the substrate having another insulating surface opposing the electrode (22) of the display element divides RGB, respectively, for red (R) (11 ') and green (G). (12 ') and (13') for blue (B). Red, green and blue filters are provided on the upper and lower substrates (26) and (25). This (11)
(12) (13) ··· (11 ″) (12 ″) (13 ″) are also oriented, and the electrodes of each active element are connected to each other in the Y direction. What is different is that a plurality of, here three, divided second electrodes are provided in a plane corresponding to the area of the oriented first electrode (22). An LCD, for example, a nematic liquid crystal (1) is sandwiched between two substrates (2
5) After filling (26), the periphery was sealed and then filled. Further, since the electrode interval (32) is 10 to 20 μm, it is not identified at all in actual use, and there is no trouble.
The CTF in the X direction also serves as a lead at that time. For this reason, as apparent from FIG. 2, for example, on the lead side in the Y direction, (5) is set to "1", the other (5 ') (5 ") is set to" 0 ", and (4) ( 4 ') and (4 ") are set to" 1 "," 0 "and" 1 "at the respective levels. In addition, for example, signals are controlled by the color separation decoder (9) to output R, G, and B signals. It has been found that, by applying the signal, all the elements connected in (5) can be simultaneously driven, and a predetermined color can be displayed by the signal.

For example, if the electrode (11) for red is "1", the element connected to the wiring (5) in the Y direction and the lead (4) in the X direction and the wiring (5) and the lead (4 ") in the X direction. ) And the elements connected to it can be displayed in red,
Similarly, when the green electrode (12) is set to "1", the element connected to the wiring (5) and the lead (4) and the wiring (5) and the lead (4 ") are connected as described above. If the same element is set to "1" also in the blue electrode (13), the same element can be set to blue in the same manner as red or green.

In addition, the red, green, and blue electrodes are all "1".
Needless to say, the color becomes white when it is set to "0", and the color becomes black when all are set to "0".

This control can be easily performed from the color classification decoder side (9).

FIG. 5 is a longitudinal sectional view taken along the line BB 'in FIG. 4 (A). From the drawing, it can be seen that the electrodes on the counter electrode side are connected and also serve as the lead (12).

The IGF (2) is provided on a substrate (25), and the electrodes (22) of the display element are also shown. When the display element (24) uses an EL luminous body or a reflective type of LCD, one of the substrates (2
6) is transparent and may be made of glass or Sumitomo Bakelite 1300 (abbreviated as PES). As the other substrate (25), it is effective to use a substrate in which an insulating film is provided on a stainless steel substrate with plastic or the like.
A fluorescent lamp is arranged below the surface of the semiconductor device,
When a full-color display is performed by providing a color filter on one surface of the substrate (25) or (26) of the present invention, it is necessary that both substrates use glass or the like and are transparent.

With the above configuration, when a 100 × 100 element was provided in a size of 5 cm × 5 cm in a 20-inch test, the yield was significantly improved. In the conventional method, the yield was only 3% when the number of defects was 100% or less and the number of defects was 1% or less. However, in the structure of the present invention, lots exceeding 10% could be obtained.

For this reason, when the number of elements increases to 525 x 640,
It has been found that the present invention can be expected to further increase its effects.

Furthermore, in the present invention, the side to be viewed by a person, for example, a substrate (26)
It is effective to provide an antireflection film (27) on the upper surface.

In addition, in the present invention, the IGF is a vertical channel type, and the IGF is used as two pairs for one first electrode corresponding to each picture element. Therefore, even if a short circuit or an open failure occurs in one of the IGFs, the IGF can be removed by the laser trimming method, and the display element can be driven only by the other. However, it goes without saying that a horizontal channel type IGF may be used.

The present invention mainly shows a full color type. However, it can also be used as a high-resolution display device. By removing the color filter on the second electrode, the number of picture elements is substantially tripled, but the resolution is tripled, although the display is black and white. The triple can be doubled or quadrupled by making the second electrode two or four or more.

[Brief description of the drawings]

FIG. 1 shows a circuit diagram of a conventional display device. 2 and 3 show circuit diagrams of the display device of the present invention. 4 and 5 show an electrical diagram and a longitudinal sectional view of a semiconductor display device of the present invention provided corresponding to the circuit of FIG.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code Agency reference number FI Technical display location H01L 21/82 H01L 21/82 R

Claims (1)

(57) [Claims] 1. A semiconductor display device in which liquid crystal is sealed between two opposing insulating substrates, wherein a peripheral circuit of a non-single-crystal semiconductor insulating gate type semiconductor device and a matrix are provided on one of the insulating substrates. A plurality of picture elements arranged in an array, each of the picture elements being constituted by a picture element electrode and a non-single-crystal insulated gate field effect semiconductor device of a non-single-crystal semiconductor for controlling an electric signal to the picture element electrode; A semiconductor display device having at least a peripheral circuit on the other of the two facing insulating substrates.