JP2637136B2 - Circuit board - Google Patents
Circuit boardInfo
- Publication number
- JP2637136B2 JP2637136B2 JP63028976A JP2897688A JP2637136B2 JP 2637136 B2 JP2637136 B2 JP 2637136B2 JP 63028976 A JP63028976 A JP 63028976A JP 2897688 A JP2897688 A JP 2897688A JP 2637136 B2 JP2637136 B2 JP 2637136B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- substrate
- metallized
- paste
- aln substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Structure Of Printed Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明はセラミックベースの回路基板に係り、特に窒
化アルミニウム基板を用いた回路基板に関する。The present invention relates to a ceramic-based circuit board, and more particularly to a circuit board using an aluminum nitride substrate.
（従来の技術） 従来、半導体回路基板として比較的安価なアルミナ
（Al2O3）基板が用いたものが多用されている。しか
し、近年、半導体装置の大出力化に伴って素子の発熱量
が増大し、これまでのAl2O3基板の放熱性では熱対策が
不十分となってきている。そこで最近では放熱性に優れ
た窒化アルミニウム（AlN）基板を用いた回路基板が利
用され始めている。(Prior Art) Conventionally, a semiconductor circuit substrate using a relatively inexpensive alumina (Al 2 O 3 ) substrate has been frequently used. However, in recent years, the calorific value of the element has increased with the increase in the output of the semiconductor device, and the heat radiating property of the Al 2 O 3 substrate has been insufficient to take measures against heat. Therefore, recently, a circuit board using an aluminum nitride (AlN) substrate having excellent heat dissipation properties has begun to be used.
ところで、このような回路基板ではAlN基板の表面に
タングステン（Ｗ）またはモリブデン（Mo）等のメタラ
イズ層を形成し、このメタライズ層の表面にニッケル
（Ni）等のメッキにより導電層を形成している。この導
体層に半導体素子および電極を兼ねるリードフレーム等
を接合している。By the way, in such a circuit board, a metallized layer such as tungsten (W) or molybdenum (Mo) is formed on the surface of an AlN substrate, and a conductive layer is formed on the surface of the metallized layer by plating with nickel (Ni) or the like. I have. A semiconductor element and a lead frame also serving as an electrode are joined to the conductor layer.
AlN基板へのメタライズ層の形成は、AlN基板の表面に
メタライズペーストを塗布し、これを焼成してメタライ
ズ部を硬化させることによって行なっている。この場
合、第３図に示すように、AlN基板１の周縁部1aを表面
部1bに直角な裁断形状にしておくと、表面に塗布したメ
タライズペースト２が周縁部1aに垂れ下り、これにより
耐電圧が低下したり、メタライズペースト２の垂下部分
2aにひび割れが生じてメタライズ不良を起こすことがあ
る。The formation of the metallized layer on the AlN substrate is performed by applying a metallized paste on the surface of the AlN substrate and baking it to harden the metallized portion. In this case, as shown in FIG. 3, when the peripheral portion 1a of the AlN substrate 1 is formed into a cut shape perpendicular to the surface portion 1b, the metallized paste 2 applied to the surface hangs down to the peripheral portion 1a, thereby preventing the AlN substrate 1 from being cut. The voltage drops or the metallization paste 2 droops
Cracking may occur in 2a, causing poor metallization.
そこで第４図に示すように、AlN基板１の周縁部1aと
表面部1bとの間に段部３を形成し、この段部３でメタラ
イズペースト２の垂下部分2aを止め、AlN基板１の周縁
部1aにメタライズペースト２の垂れが及ばないようにす
ることが考えられる。Therefore, as shown in FIG. 4, a step 3 is formed between the peripheral portion 1a and the surface 1b of the AlN substrate 1, and the hanging portion 2a of the metallized paste 2 is stopped at the step 3, and It is conceivable that the metallized paste 2 does not reach the peripheral edge 1a.
（発明が解決しようとする課題） ところが、第４図に示す回路基板では、AlN基板１の
突出隅角縁部3a,3bが欠損したり、窪み隅角縁部3cにク
ラックが乗じる場合がある。(Problems to be Solved by the Invention) However, in the circuit board shown in FIG. 4, the protruding corner edges 3a and 3b of the AlN substrate 1 may be damaged or the depression corner edges 3c may be cracked. .
本発明はこのような事情に鑑みてなされたもので、メ
タライズ不良による耐電圧低下を防止できることは勿
論、AlN基板の段部での欠損やクラックの発生も防止で
きる回路基板を提供することを目的とする。The present invention has been made in view of such circumstances, and it is an object of the present invention to provide a circuit board that can not only prevent a decrease in withstand voltage due to poor metallization, but also prevent the occurrence of defects or cracks at the step portion of an AlN substrate. And
（課題を解決するための手段） 本発明は窒化アルミニウム基板の表面のメタライズペ
ーストを塗布し、これを焼成してメタライズ層を形成し
てなる回路基板において、前記窒化アルミニウム基板の
メタライズペースト塗布用表面の周縁部分に一段低いメ
タライズペースト非塗布用の段部を形成し、その段部の
突出隅角縁部と窪み隅角縁部とを緩かな曲面としたこと
を特徴とする。(Means for Solving the Problems) The present invention relates to a circuit board formed by applying a metallized paste on the surface of an aluminum nitride substrate and baking it to form a metallized layer. Are formed at the peripheral edge of the metallized paste, and the protruding corner edge and the depressed corner edge of the step are formed into a gentle curved surface.
（作用） 本発明によれば、窒化アルミニウム基板のメタライズ
ペースト塗布用表面の周縁部分に形成した一段低いメタ
ライズペースト非塗布用の段部の突出隅角縁部と窪み隅
角縁部とを緩かな曲面としたことにより、取扱い中に段
部に衝撃や荷重が作用しても、その段部の突出隅角縁部
や窪み隅角縁部への応力集中を防止できる。(Operation) According to the present invention, the protruding corner and the recessed corner of the step for applying the metallized paste, which is one step lower, formed on the peripheral portion of the surface for applying the metallized paste on the aluminum nitride substrate are made gentle. Due to the curved surface, even if an impact or a load is applied to the step during handling, stress concentration on the protruding corner edge or the depressed corner edge of the step can be prevented.
したがって、突出隅角縁部が衝撃により欠損したり、
窪み隅角縁部に荷重によるクラックが生じたりすること
を防止でき、窒化アルミニウム基板の健全性維持が図れ
るようになる。Therefore, the protruding corner edge may be damaged by impact,
Cracks due to the load can be prevented from occurring at the corners of the corners of the recess, and the soundness of the aluminum nitride substrate can be maintained.
なお、前記曲面の応力集中回避のための望ましい曲率
半径の範囲は0.01〜0.5mmである。The preferable radius of curvature for avoiding stress concentration on the curved surface is 0.01 to 0.5 mm.
（実施例） 以下、本発明の一実施例を第１図および第２図を参照
して説明する。(Embodiment) An embodiment of the present invention will be described below with reference to FIG. 1 and FIG.
第１図はこの実施例の回路基板を示し、熱伝導率が50
W/m・Ｋ以上の窒化アルミニウム（AlN）基板11の表面に
タングステン（Ｗ）またはモリブデン（Mo）を成分とし
たメタライズ層12を形成し、さらにその表面に図示しな
いがニッケル（Ni）合金その他の金属からなる導電層を
介してシリコンチップ等の半導体素子を装着した構成と
される。FIG. 1 shows a circuit board of this embodiment, which has a thermal conductivity of 50.
A metallized layer 12 containing tungsten (W) or molybdenum (Mo) is formed on the surface of an aluminum nitride (AlN) substrate 11 of W / m · K or more, and a nickel (Ni) alloy or the like (not shown) is formed on the surface. A semiconductor element such as a silicon chip is mounted via a conductive layer made of a metal.
AlN基板11の表面11aの周縁部分には一段低い段部13が
形成されており、その段部13の底面13aは基板表面11aと
略平行であるが、立上り面13bは基板表面11aに対して例
えば60゜の傾斜をなす傾斜面とされている。なお、AlN
基板11の外周面11bから中心側への段部13の底面13aの幅
Ｓは0.2mm、また、段差ｈは0.3mmとされている。A lower step 13 is formed at the periphery of the surface 11a of the AlN substrate 11, and the bottom surface 13a of the step 13 is substantially parallel to the substrate surface 11a, but the rising surface 13b is higher than the substrate surface 11a. For example, the inclined surface has a slope of 60 °. In addition, AlN
The width S of the bottom surface 13a of the step 13 from the outer peripheral surface 11b to the center of the substrate 11 is 0.2 mm, and the step h is 0.3 mm.
このものにおいて、AlN基板11の段部13の２つの突出
隅角縁部、即ち段部13の立上り面13bとAlN基板11の表面
11aとの交差縁部14、および段部13の底面13bとAlN基板1
1の外周面11bとの交差段部15は、それぞれ半径が約0.2m
mの緩かな曲面とされている。In this structure, two protruding corner edges of the step 13 of the AlN substrate 11, that is, the rising surface 13b of the step 13 and the surface of the AlN substrate 11
11a, the crossing edge 14 and the bottom 13b of the step 13 and the AlN substrate 1
Each of the crossing steps 15 with the outer peripheral surface 11b has a radius of about 0.2 m.
m has a gentle curved surface.
また、段部13の窪み隅角縁部、即ち底面13aと立上り
面13bとの交差窪み部16も、半径0.2mmの緩かな曲面とさ
れている。In addition, the edge of the recessed corner of the step portion 13, that is, the recessed portion 16 where the bottom surface 13a and the rising surface 13b intersect is also a gentle curved surface having a radius of 0.2 mm.
そして、前記のスタライズ層12の形成は、メタライズ
ペートをAlN基板11の表面11aに外周縁部まで印刷法によ
って所定の厚さをもって塗布し、その後これを焼成して
硬化させることにより行なわれる。この場合、メタライ
ズペーストはAlN基板11の周縁部から垂下する可能性が
あるが、段部13を設けたことによって、その立上り面13
bおよび底面13aで停滞し、AlN基板11の外周面11には垂
下しない。したがって、耐電圧特性が低下することはな
い。The formation of the above-mentioned stallized layer 12 is performed by applying a metallized sheet to the surface 11a of the AlN substrate 11 with a predetermined thickness up to the outer peripheral edge portion by a printing method, and thereafter firing and curing the metalized sheet. In this case, the metallizing paste may hang down from the peripheral portion of the AlN substrate 11, but the provision of the step 13 causes the rising surface 13
b, and stagnates on the bottom surface 13a and does not hang down on the outer peripheral surface 11 of the AlN substrate 11. Therefore, the withstand voltage characteristics do not decrease.
また、前記の段部13の突出隅角縁部14,15を緩かな曲
面としたので、この部分に衝撃が加わっても欠損が生じ
にくい。しかも段部13の窪み隅角縁部16も緩かな曲面と
したので、例えば段部13の底面13aに図に下向きに荷重
が作用したような場合でも、応力集中が起こらず、クラ
ックが発生しにくい。Further, since the protruding corner edges 14, 15 of the step portion 13 are formed as gentle curved surfaces, even if an impact is applied to this portion, it is unlikely that a loss occurs. Moreover, since the recessed corner 16 of the step 13 is also a gentle curved surface, even when a load is applied downward to the bottom surface 13a of the step 13 in the figure, stress concentration does not occur and cracks occur. Hateful.
さらに、このような構成によれば、回路基板のコンパ
クト化および経済性向上を図りつつ基板の健全性を維持
するという点でもきわめて効果的なものとなる。即ち、
AlN基板11の方面の周縁部を除いた一定範囲にメタライ
ズペーストを塗布すれば、メタライズペーストの垂下が
起らないので前記の段部13を設ける必要はない。しか
し、それではメタライズ層以上の余分な面積がAlN基板1
1に必要となり、それだけ回路基板が大形化、高コスト
化することになる。このことに対処するために、前記の
段部13を形成した訳であるが、このままでは段部13に欠
損やクラックが生じ、健全性を損う可能性がある。これ
に対して段部13を曲面としたことにより、欠損やクラッ
クの防止が図れ、コンパクト化および低コスト化ととも
に健全性も維持できるようになるものである。特に半導
体回路基板の大容量化に対して、放熱性に優れたAlN基
板11の利用がより有効に図れるという利点は大きい。Furthermore, such a configuration is extremely effective in maintaining the soundness of the circuit board while reducing the size and economical efficiency of the circuit board. That is,
If the metallized paste is applied to a certain area except for the peripheral edge of the AlN substrate 11, the metallized paste does not droop, so that the step 13 need not be provided. However, then the extra area beyond the metallization layer
1 is required, which leads to an increase in the size and cost of the circuit board. In order to cope with this, the step 13 is formed. However, if the step 13 is left as it is, the step 13 may be damaged or cracked, and the soundness may be impaired. On the other hand, by forming the step portion 13 as a curved surface, loss and cracks can be prevented, and the soundness can be maintained while reducing the size and cost. In particular, there is a great advantage that the use of the AlN substrate 11 having excellent heat dissipation can be more effectively used for increasing the capacity of the semiconductor circuit board.
なお、第２図に示すように、前記実施例のものと略同
一形状、寸法をAlN基板11′について段部13′の突出隅
角縁部14′,15′および窪み隅角縁部16′を曲面とした
ものを試作し、前記実施例のものと比較したところ、前
記実施例のものに対するよりも小さい衝撃や荷重によっ
て、突出隅角縁部14′,15′の欠損あるいは窪み隅角縁
部16′へのクラック発生が生じることが認められた。As shown in FIG. 2, the AlN substrate 11 'has substantially the same shape and dimensions as those of the embodiment described above, and the protruding corner edges 14', 15 'and the recessed corner edges 16' of the step 13 'are formed. A prototype was made as a curved surface, and compared with that of the above embodiment, the impact or load was smaller than that of the above embodiment. It was observed that cracks occurred in the portion 16 '.
なお、本発明では前記実施例で示した寸法、具体的形
状等に必ずしもとらわれず、段部の欠損、クラック発生
を防止することができる範囲での種々の変形、応用等が
可能なことは勿論である。The present invention is not necessarily limited to the dimensions, specific shapes, and the like shown in the above-described embodiment, and it is needless to say that various modifications, applications, and the like are possible within a range in which stepped portions can be prevented from being cracked. It is.
以上のように、本発明によれば、窒化アルミニウム基
板のメタライズペースト塗布用表面の周縁部分に形成し
たメタライズペースト非塗布用の段部を緩かな曲面とし
たことにより、その部分の欠損やクラック発生防止が図
れ、メタライズ不良による耐電圧低下防止は勿論、健全
性を大幅に向上することができるという優れた効果が奏
される。As described above, according to the present invention, the step for applying no metallizing paste formed on the peripheral portion of the surface for applying metallizing paste on the aluminum nitride substrate has a gentle curved surface, thereby causing defects or cracks in that portion. Thus, an excellent effect of not only preventing withstand voltage reduction due to poor metallization but also significantly improving soundness can be obtained.
第１図は本発明に係る回路基板の一実施例を示す部分拡
大断面図、第２図は比較例を示す部分拡大断面図、第３
図および第４図は互いに異なる従来例を示す部分拡大断
面図である。 11……AlN基板、11a……表面、11b……外周面（側
面）、12……メタライズ層、13……段部、14,15……突
出隅角縁部、16……窪み隅角縁部。FIG. 1 is a partially enlarged sectional view showing an embodiment of a circuit board according to the present invention, FIG. 2 is a partially enlarged sectional view showing a comparative example, and FIG.
FIG. 4 and FIG. 4 are partially enlarged sectional views showing different conventional examples. 11 ... AlN substrate, 11a ... surface, 11b ... outer peripheral surface (side surface), 12 ... metallized layer, 13 ... step, 14, 15 ... protruding corner edge, 16 ... hollow corner edge Department.
Claims (1)
ペーストを塗布し、これを焼成してメタライズ層を形成
してなる回路基板において、前記窒化アルミニウム基板
のメタライズペースト塗布用表面の周縁部分に一段低い
メタライズペースト非塗布用の段部を形成し、その段部
の突出隅角縁部と窪み隅角縁部とを緩かな曲面としたこ
とを特徴とする回路基板。A metallized paste is applied to the surface of an aluminum nitride substrate, and the metallized paste is baked to form a metallized layer. A circuit board, characterized in that a step for applying no paste is formed, and a protruding corner edge and a depressed corner edge of the step are formed into a gentle curved surface.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63028976A JP2637136B2 (en) | 1988-02-12 | 1988-02-12 | Circuit board |
| US07/250,635 US4906511A (en) | 1987-02-12 | 1988-09-29 | Aluminum nitride circuit board |
| KR1019880012887A KR910007470B1 (en) | 1987-09-30 | 1988-09-30 | Aluminium nitride circuit board |
| EP88309137A EP0310437B1 (en) | 1987-09-30 | 1988-09-30 | Method of manufacturing a metallised aluminium nitride circuit board |
| DE3854293T DE3854293T2 (en) | 1987-09-30 | 1988-09-30 | Process for manufacturing a metallized aluminum nitride circuit substrate. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63028976A JP2637136B2 (en) | 1988-02-12 | 1988-02-12 | Circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01205590A JPH01205590A (en) | 1989-08-17 |
| JP2637136B2 true JP2637136B2 (en) | 1997-08-06 |
Family
ID=12263452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63028976A Expired - Lifetime JP2637136B2 (en) | 1987-02-12 | 1988-02-12 | Circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2637136B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185580A (en) * | 2010-01-18 | 2011-09-14 | 精工爱普生株式会社 | Electronic apparatus, method of manufacturing substrate, and method of manufacturing electronic apparatus |
| JP5407903B2 (en) * | 2010-01-28 | 2014-02-05 | セイコーエプソン株式会社 | Electronic device and method of manufacturing electronic device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS513866U (en) * | 1974-06-26 | 1976-01-12 |
-
1988
- 1988-02-12 JP JP63028976A patent/JP2637136B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01205590A (en) | 1989-08-17 |
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