JP2630249B2 - Total reflection X-ray fluorescence analyzer - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a total reflection X-ray fluorescence spectrometer, and more particularly to a total reflection X-ray fluorescence spectrometer capable of removing a background.

[0002]

2. Description of the Related Art As semiconductor devices become more highly integrated, there is a demand for even more clean processes. With respect to silicon wafers, it is known that impurity metals existing on the surface have various effects on device characteristics, such as deterioration of device characteristics due to generation of crystal defects, poor breakdown voltage, and fluctuation of threshold voltage. In order to produce a highly reliable submicron device with a high yield, the amount of this surface impurity metal needs to be 10 ¹⁰ atoms / cm ² or less. In order to reduce the amount of impurities, it is necessary to develop and improve an analytical method for accurately detecting and quantifying the amount of impurities on a wafer. For this purpose, methods for measuring electrical properties such as lifetime, secondary ion mass spectrometry, wet chemical analysis using atomic absorption spectrometry, and total reflection X-ray fluorescence have been put into practical use. ing.

[0003] The total reflection X-ray fluorescence spectroscopy (hereinafter abbreviated as TXRF) mainly used a method using SOR (radiation light) at first. However, since small laboratory equipment that uses a rotating anti-cathode as the X-ray source and monochromatic incident X-rays using a dispersive crystal has been used, it has rapidly spread as a method for analyzing surface trace metals. I've been.

[0004] The principle of analysis of trace metals by total reflection of X-rays is considered as follows. In the X-ray wavelength region, the refractive index of all substances is slightly smaller than 1. Therefore, when an optically flat surface is irradiated with X-rays at an angle lower than a certain critical angle determined by the substance, the incident X-rays are reflected at an angle equal to the incident angle with almost no penetration into the substance. You. The reflectivity of the incident X-ray changes greatly near the critical point,
Accordingly, the penetration depth of X-rays also changes. At angles below the critical angle, the penetration depth of X-rays is at most about several tens of angstroms, and the intensity of incident X-rays near the surface at this time is increased by the effect of standing waves. Under such conditions, if a metal impurity of about an atomic layer or less adheres to the flat surface, this metal impurity is strongly excited by incident X-rays to generate characteristic X-rays. Detection can be performed with high sensitivity.

[0005]

However, in the prior art, when detecting trace metal impurities, the following problems have occurred.

When a trace amount of metal impurities in a silicon substrate (silicon wafer) is measured by TXRF, Si-Kα and incident X-rays from the silicon substrate are scattered by the silicon substrate in addition to the characteristic X-rays of the target element. Two strong X-ray peaks are observed simultaneously.

Further, when the incident X-ray is an X-ray monochromated by the spectral crystal, the incident X-ray is Bragg-reflected on the silicon surface depending on the incident direction of the incident X-ray with respect to the single-crystal silicon substrate. The reflected X-rays are diffracted in the direction of the detector and may directly enter the detector. Since this diffraction line has the same energy as the incident X-ray scattered on the silicon substrate surface, in this case, a stronger peak is observed at the energy position of the incident X-ray. This phenomenon is shown, for example, in the document "Progress in X-ray analysis 24, pages 97 to 111".

This phenomenon is briefly described below. The silicon substrate is Si (001), the incident X-ray azimuth is “110”, and the incident X-ray is
FIG. 4 shows an Ewald plot for the reciprocal lattice of W-Lβ and Si (001), with the line being W-Lβ (λ = 0.128 nm). The X-rays incident on the silicon substrate under the condition of total reflection actually penetrate into the silicon substrate to a depth of several tens of ohms, so that they are diffracted and emitted by the silicon substrate. In this case, (224) and (4
It can be confirmed from FIG. 4 that 44) satisfies the diffraction condition.
FIG. 5 shows this in real space. From this figure,
It can be seen that both diffraction lines on the silicon substrate are diffracted in the detector direction. FIG. 6 also shows the Ewald sphere as “00”.
1 "direction. This figure shows that the reciprocal lattice points satisfying the diffraction condition are (153) and (11) in addition to the above two points.
3), (513), and (553).

Of the two peaks described above, Si-Kα
Has an energy of 1.739 keV, but the energy of incident X-rays is, for example, 9.671 keV in W-Lβ,
In Au-Lα, it is 9.712 keV, and has sufficient energy to excite characteristic X-rays of a metal impurity (mainly a transition metal) which becomes a problem on the silicon substrate.

[0010] As a corresponding phenomenon, when the scattering diffraction peak of the incident X-ray is strongly observed, the F
A phenomenon in which the intensity of e-Kα, Ni-Kα or the like increases or decreases has been observed (the above-mentioned paper). This is because impurities such as Fe and Ni in the Be film used as a window of the detector are excited by scattered diffraction lines of incident X-rays, and Fe-Kα, Ni-K
It is considered that α or the like is generated. That is, the impurities in the Be film are excited by the incident X-rays scattered and diffracted in the direction of the detector, and this becomes the background. Therefore, in this case, it is understood that the intensity of the background increases and decreases almost in proportion to the intensity of the scattered diffraction X-rays of the incident X-rays. The strength of Fe-Kα, Ni-Kα, etc. varies depending on the concentration level of impurities in the Be film, but is usually 10 ^9.
It has the same strength as the background at the level of 〜１０10 ¹⁰ atoms / cm ² . This intensity is equivalent to the level of the lower detection limit required for detecting impurities on the silicon substrate. Therefore, when the TXRF is used as a monitor of the impurity concentration on the silicon substrate, the background causes a decrease in measurement accuracy.

In order to solve the problem caused by the incident X-ray diffracted on the silicon substrate emitted in the detection direction, a thin-film X-ray diffractometer disclosed in Japanese Patent Application Laid-Open No. 2-184747 is disclosed. There is. This thin film X-ray diffractometer is shown in FIG.

First, the X-ray source 31, the sample thin film 32, and the detector 33 are arranged at positions where strong diffraction rays are emitted from the substrate 34 in the direction of the detector 33. In this state, the sample thin film 32 is fixed in a plane perpendicular to the vector C while the incident point D is fixed.
From the azimuth DE to the azimuth DF by a predetermined rotation angle α _n (n = 1)
Rotate one by one. At this time, while monitoring the detected diffraction peak, the sample thin film 32 is fixed at a rotation angle α _n (n: a positive integer) at which the diffraction peak disappears. In this state, normal thin-film X-ray diffraction is performed.

Further, when two or more diffraction peaks from the substrate 34 are observed, the rotation angle α _{n at} which each diffraction peak disappears is stored in advance. In the actual measurement, the thin film X-ray diffraction is measured while rotating the sample thin film 32. Then, the measurement of the thin film X-ray diffraction is stopped at the angle where the diffraction peak from the substrate 34 appears, and the rotation of the sample thin film 32 is continued. After that, the measurement of the thin film X-ray diffraction is restarted after the angle has passed. This makes it possible to avoid diffraction peaks from the substrate 34 and perform highly accurate X-ray diffraction even with a thin film on a single-crystal substrate.

However, the thin-film X-ray diffractometer described above can only deal with the removal of the diffraction line at one point at the center of the sample thin film 32, but cannot remove the diffraction line at another position on the silicon substrate. Could not do.
Therefore, in portions other than the center of the sample thin film 32,
There has been a problem that an accurate measurement cannot be performed. In the measurement of trace metal impurities on a silicon substrate by TXRF, it is necessary to measure the distribution of the trace component not only at one point on the silicon substrate but also at any position. Therefore, the technique of the conventional thin film X-ray diffraction apparatus cannot be applied to the measurement of metal impurities on a silicon substrate by TXRF.

[0015] A similar problem may occur in the conventional TXRF. That is, as shown in FIGS. 8 and 9, the conventional TXRF has a ψ-axis for changing the incident angle to the silicon substrate 13 with respect to the Z-axis moving mechanism 16, the r-axis moving mechanism 24, and the incident X-ray 23. A sample table 42 including a rotation mechanism 11 and a θ axis rotation mechanism 12 about an axis perpendicular to the horizontal plane of the sample table, a semiconductor detector 22 (hereinafter abbreviated as SSD), an amplifier 25, a multi-channel analyzer 26, data Processing unit 19 and stepper motor controller 2 of sample stage
0, a rotating anti-cathode X-ray source 43, a spectral crystal 44, and the like.

However, when measuring the concentration of the trace component at the point (x, y) on the silicon substrate 13 using the sample table 42, the point (x, y) is first coordinate-transformed into the point (r, θ). To move the sample stage to the point (x,
y) must be matched. At this point (x, y), if the above-described background occurs, there is no other way to change the incident azimuth of the incident X-rays 23 than by performing θ rotation. Therefore, the measurement point on the silicon substrate 13 fluctuates by performing the θ rotation, and it becomes impossible to perform the measurement while changing the incident azimuth of the incident X-ray 23 at the same point. In particular, the displacement of the measurement point at the center of the silicon substrate 13 increases.

That is, conventionally, it has not been possible to perform measurement under conditions with a small background over the entire surface of the silicon substrate. Therefore, an object of the present invention is to provide a total reflection X-ray fluorescence spectrometer capable of performing measurement under conditions with a small background over the entire surface of a silicon substrate.

[0018]

[0019]

[0020]

According to the first aspect of the present invention,
On the sample stage on which the substrate to be measured is
An XY axis moving mechanism for moving the sample stage, and on the virtual plane
Axis rotation mechanism that rotates the sample stage around the φ axis
And the sample stage around the θ axis perpendicular to the virtual plane.
The θ-axis rotation mechanism that rotates
Characteristic X-rays emitted from the measurement position irradiated with X-rays
-Reflection fluorescent lamp provided with a detector for detecting scattered diffraction X-rays
In the optical X-ray analyzer, any position on the surface of the substrate to be measured
The above measurement position is moved and the θ axis is
XY axis movement mechanism and φ axis rotation so as to cross the position
Control means for controlling a mechanism, wherein the control means
When the scattered diffraction X-rays detected by the detector are less than a predetermined value.
While controlling the θ-axis rotation mechanism , the sample stage is stopped when the scattered X-rays detected by the detector become equal to or less than a predetermined value while rotating the sample stage at predetermined angles around the θ-axis. Thus, the total reflection X-ray fluorescence spectrometer is characterized by controlling the θ-axis rotation mechanism.

According to a second aspect of the present invention, the substrate to be measured is mounted.
Move the sample stage on the virtual plane
XY axis moving mechanism and the φ axis on the virtual plane
Φ-axis rotation mechanism that rotates the sample stage
Θ axis rotation that rotates the sample stage about the θ axis perpendicular to the axis
Mechanism and the incident X-ray was irradiated on the surface of the substrate to be measured
Characteristic X-rays and scattered diffraction X-rays emitted from the measurement position
A total reflection X-ray fluorescence analyzer equipped with a detector for detecting
The measurement position to an arbitrary position on the surface of the substrate to be measured.
And make the θ axis intersect the measurement position.
Control for controlling the XY axis moving mechanism and the φ axis rotating mechanism
Means for controlling the plane direction of the substrate to be measured, the incident angle of the incident X-ray, the incident direction of the incident X-ray, and the θ-axis rotation angle corresponding to each data of the scattered diffraction X-ray intensity. In addition to a storage unit, a data storage unit stores a plane orientation of a substrate to be measured, an incident angle of incident X-rays, an incident direction of incident X-rays, and a θ-axis rotation angle corresponding to each data of scattered X-ray intensity at a measurement position. The total reflection X-ray fluorescence spectrometer is characterized in that the sample table is rotated about the θ axis by the θ axis rotation angle by controlling the θ axis rotation mechanism.

[0022]

[0023]

[0024]

According to the first aspect of the present invention, the control means includes:
The sample stage is stopped when the scattered X-rays detected by the detector become equal to or less than a predetermined value while rotating the sample stage at predetermined angles around the θ axis. Therefore, according to the present invention, it is possible to perform measurement at an arbitrary position on the substrate to be measured under a condition with a small background.

In the second aspect of the present invention, the data of the control means is
The θ-axis rotation angle corresponding to each data of the plane direction of the substrate to be measured , the incident angle of the incident X-ray, the incident direction of the incident X-ray, and the scattered X-ray intensity is stored in advance in the data storage unit. The θ-axis rotation angle corresponding to each data of the plane orientation of the substrate to be measured, the incident angle of the incident X-ray, the incident direction of the incident X-ray, and the scattered X-ray intensity at the measurement position is read from the data storage unit. Then, by controlling the θ-axis rotation mechanism, the sample stage is rotated about the θ-axis by the θ-axis rotation angle. Thereby, the θ-axis rotation angle at which the background is reduced can be obtained instantaneously.

[0027]

[0028]

Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a main part of a total reflection X-ray fluorescence spectrometer (TXRF) according to the first embodiment. This TXRF is applied to the silicon substrate 13 with respect to the incident X-rays 23.
Axis rotation mechanism 11 for changing the angle of incidence on the specimen, sample stage 4
2 rotation mechanism 1 about an axis perpendicular to the horizontal plane
2, and an X-axis moving mechanism 14, a Y-axis moving mechanism 15, and a Z-axis moving mechanism 16 in the plane of the silicon substrate 13. The θ rotation axis can be set at any position on the silicon substrate 13.

FIG. 2 is a diagram showing the configuration of the TXRF according to this embodiment. In order to achieve the above function, the sample table 4
Reference numeral 2 denotes a lower stage 17 having a ψ-axis rotating mechanism 11, a θ-axis rotating mechanism 12, and a Z-axis moving mechanism 16, and an upper stage 18 having an X-axis moving mechanism 14 and a Y-axis moving mechanism 15. The ψ-axis rotation mechanism 11, the θ-axis rotation mechanism 12, and the Z-axis movement mechanism 16 are controlled by step motors that can operate independently of each other. X in this TXRF
The magnitude of the incident angle of the line is approximately 0.05-0.2 °. For this reason, the rotation angle is accurately controlled with an accuracy of about 0.01 °.

The X-axis moving mechanism 14 and the Y-axis moving mechanism 15
Since it is necessary to measure the distribution of the impurity concentration at each position of the sample, the position of the sample can be controlled with an accuracy of about 1 mm. X
In order to support the upper sample stage 18 having the axis moving mechanism 14 and the Y-axis moving mechanism 15, for example,
Guide rails in the X and Y directions are provided. Each of the step motors that drive the mechanisms 11 to 16 described above is controlled by the step motor controller 20,
The sample tables 17 and 18 are set to target incident angles and positions.

Next, the operation of the TXRF according to this embodiment will be described. 2, first, the silicon substrate 13 is set on the upper sample stage 18 so that the orientation flat 21 is at a specific angle with respect to the incident X-ray 23. This is because the magnitude of the background varies depending on the incident angle of the incident X-rays 23 on the silicon substrate 13, and therefore it is necessary to set an approximate incident angle in advance. Next, the upper sample stage 18 is moved in the X and Y axis directions, and an arbitrary point on the silicon substrate 13 is aligned with the center of the θ rotation axis.

In addition, the center of the θ rotation axis is determined in advance by the SSD 22
To the center axis of After the central axis of the SSD 22 and the measurement point on the silicon substrate 13 are matched, the incident angle of the incident X-ray 23 is set. For this purpose, the horizontal position must first be detected. Various methods can be considered as a detection method. A method of detecting the horizontal position of the silicon substrate 13 by repeating the process of gradually tilting the ψ-axis rotation mechanism 11 while moving the Z axis, and a method of detecting the distance to the silicon substrate 13 by using a sensor The method of measuring the horizontal position and measuring the horizontal position is common. After detecting the horizontal position, the sample stage is tilted by the ψ-axis rotating mechanism 11 so that the desired incident angle is obtained. Thereafter, by irradiating the incident X-rays 23 to desired measurement points on the silicon substrate 13, the silicon substrate 13
The above impurities can be measured.

At this time, as described above, Si-Kα and scattered diffraction X-rays are detected simultaneously. These scattering diffractions X
The line intensity differs depending on the plane direction of the silicon substrate 13 or the direction of incidence on the silicon substrate 13 (see above). Then, using a background substrate (substrate that has been confirmed to have no trace metal impurities attached), the scattered diffraction X-ray intensity and the background X-ray intensity are measured, and the scattering at which the background falls below the detection limit is measured. The diffraction X-ray intensity (hereinafter abbreviated as a set value) is obtained in advance.

Next, under the same conditions, characteristic X-rays 24 from trace metal impurities on the silicon substrate 13 are detected by the SSD 22, and a detection signal from the SSD 22 is sent to the multi-channel analyzer 26 via the amplifier 25. .
At this time, the SSD 22 has a scattering diffraction X stronger than the set value.
When the line intensity is observed, a driving signal is output from the data processing unit 19 to the step motor controller 20. As a result, the step motor rotates the θ-axis at every predetermined fixed angle. At the same time, the scattered diffraction X-ray intensity is detected by the SSD 22 at each angle of the θ axis. Then, when the detected intensity becomes lower than the set value, the data processing unit 19 outputs a stop signal to the step motor controller 20. As a result, the θ-axis rotation mechanism 12 stops, and the rotation angle of the θ-axis can be set so that the scattered diffraction X-ray intensity becomes equal to or less than the set value. The measurement result in this state is output 27
Output.

Therefore, according to the present embodiment, it is possible to measure the trace metal impurity concentration on the silicon substrate 13 at a desired measurement point on the silicon substrate 13 in an incident direction with a small background.

According to the above-mentioned document, silicon (00
1) When the substrate is used, when the incident X-ray azimuth is changed from “110” to “100”, the scattered diffraction X-ray intensity is reduced to about 1/15 and the impurity backing is about 0.01 cps. It is shown that the ground falls below the detection limit. That is, as described above, the background under the condition of the automatically set θ-axis can be reduced to the detection limit or less.

It is known that the background intensity is proportional to the scattered X-ray intensity when the amount of impurities in the Be film of the SSD 22 is very small. For this reason, it is conceivable that the background intensity due to the above-mentioned cause in the current measurement is calculated and subtracted (corrected) from the ratio of the background intensity and the scattered diffraction X-ray intensity obtained in advance. However, according to this method, a calculation error may occur. On the other hand, according to the present embodiment,
Since the background itself can be reduced below the detection limit, there is no need to correct the measured values. That is, according to the present embodiment, it is possible to obtain an extremely accurate measured value without an error due to calculation.

Next, a second embodiment of the present invention will be described. FIG. 3 is a diagram illustrating a main part of the TXRF according to the present embodiment. The TXRF according to the present embodiment is different from the TXRF according to the above-described first embodiment in that the data processing unit 19 includes a data storage unit 28. For other configurations, the first
This is the same as the TXRF according to the embodiment.

Referring to FIG. 3, TXRF according to the present embodiment
The operation of will be described. First, the plane orientation of the silicon substrate 13 measured in the past, the incident angle of the incident X-rays 23, the incident orientation of the incident X-rays 23, and the scattered diffraction X-ray intensity at the incident orientation are recorded in the data storage unit 28 in advance. Since the TXRF according to the first embodiment does not include the data storage unit 28,
Every time the scattered diffraction X-ray intensity becomes larger than the set value, it is necessary to rotate the θ axis while monitoring the scattered diffraction X-ray intensity. However, according to this embodiment, the incident azimuth of the incident X-ray 23 and the scattered diffraction X-ray intensity at the incident azimuth corresponding to the substrate orientation can be instantaneously read from the data storage unit 28 from the past measurement data. . Then, the lower sample stage 17 is rotated based on the data (θ rotation angle) read from the data storage unit 28. Accordingly, it is not necessary to detect the scattered diffraction X-ray intensity while rotating the lower sample stage 17, and the lower sample stage 17 can be set to a desired θ rotation angle in a short time.

Since the silicon substrate 13 has an error in the plane orientation due to a lot difference or the like, there is a possibility that the scattered diffraction X-ray intensity may be equal to or larger than the set value even at an angle rotated in advance. Therefore, the scattered diffraction X-ray intensity is further detected at this angle, and when the intensity is below the set value, the measurement is started. If the scattered X-ray intensity is larger than the set value, the angle of the scattered diffraction X-ray is found to be equal to or less than the set value by rotating the θ rotation angle before and after the angle, and the scattered X-ray intensity is set to the set value. At this point, a stop signal is sent to the step motor controller 20 to stop the rotation of the θ-axis and start the measurement. Therefore, according to the present embodiment, it is possible to greatly reduce the search time of the scattered diffraction X-ray intensity as compared with the first embodiment.

[0041]

As described above, in the total reflection X-ray fluorescence spectrometer according to the present invention, by controlling the XY-axis moving mechanism and the ψ-axis rotating mechanism, measurement can be performed at an arbitrary position on the surface of the silicon substrate. The position is moved so that the θ axis intersects the measurement position. Therefore, even if the sample stage is rotated about the θ axis, the measurement position does not change.
That is, according to the present invention, it is possible to measure an impurity at an arbitrary position on a silicon substrate under a condition with a small background.

Further, by storing in advance the θ-axis rotation angle corresponding to the data such as the plane orientation of the silicon substrate in the data storage unit, the θ-axis rotation angle at the measurement position can be obtained instantaneously from the data storage unit. it can. This makes it possible to perform the measurement in a short time under the condition where the background is small.

[Brief description of the drawings]

FIG. 1 is a diagram showing a main part of a total reflection X-ray fluorescence spectrometer according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a total reflection X-ray fluorescence spectrometer according to the first embodiment of the present invention.

FIG. 3 is a diagram showing a total reflection X-ray fluorescence spectrometer according to a second embodiment of the present invention.

FIG. 4 is an Ewald diagram showing diffraction of incident X-rays on a silicon surface.

FIG. 5 is a real space diagram showing diffraction of incident X-rays on a silicon surface.

FIG. 6 is a perspective view of an Ewald sphere showing diffraction of incident X-rays on a silicon surface.

FIG. 7 is a perspective view of a conventional thin film X-ray diffraction apparatus.

FIG. 8 is a diagram showing a main part of a conventional total reflection X-ray fluorescence spectrometer.

FIG. 9 is a view showing a conventional total reflection X-ray fluorescence spectrometer.

[Explanation of symbols]

 11 ψ-axis rotation mechanism 12 θ-axis rotation mechanism 13 Silicon substrate (substrate to be measured) 14 X-axis movement mechanism 15 Y-axis movement mechanism 16 Z-axis movement mechanism 17 Lower sample table 18 Upper sample table 19 Data processing unit (control means) 20 Step motor controller (control means) 22 SSD (detector) 23 incident X-ray 24 characteristic X-ray 26 multi-channel analyzer (control means) 27 output 28 data storage

Claims (2)

(57) [Claims] 1. A sample stage on which a substrate to be measured is mounted, and an XY-axis moving mechanism for moving the sample stage on a virtual plane.
And rotate the sample stage around the φ axis on the virtual plane
φ-axis rotation mechanism and rotation of sample stage around θ axis perpendicular to the virtual plane
Θ-axis rotating mechanism to be measured and the measurement position on the surface of the substrate to be measured irradiated with incident X-rays
Of characteristic X-rays and scattered diffraction X-rays emitted from
In a total reflection X-ray fluorescence spectrometer equipped with a detector, the measurement position is moved to an arbitrary position on the surface of the substrate to be measured.
So that the θ axis intersects the measurement position.
Control means for controlling the Y-axis moving mechanism and the φ-axis rotating mechanism
Provided, said control means, scattering diffraction detected by said detector
Control the θ-axis rotation mechanism so that X-rays fall below a predetermined value
At the same time, do not rotate the sample
When the scattered X-rays detected by the
The θ-axis rotation mechanism is controlled so that the sample stage stops when the
A total reflection X-ray fluorescence analyzer. 2. A sample table on which a substrate to be measured is mounted, XY axis moving mechanism for moving the sample stage on a virtual plane
When, Rotate the sample stage around the φ axis on the virtual plane
φ axis rotation mechanism, Rotate the sample stage around the θ axis perpendicular to the virtual plane
A θ-axis rotation mechanism to Measuring position on the surface of the substrate to be irradiated with incident X-rays
Of characteristic X-rays and scattered diffraction X-rays emitted from
In a total reflection X-ray fluorescence spectrometer equipped with a detector, Move the measurement position to any position on the substrate
So that the θ axis intersects the measurement position.
Control means for controlling the Y-axis moving mechanism and the φ-axis rotating mechanism
Prepared, The control means controls the plane orientation of the substrate to be measured and the incidence of incident X-rays.
Angle, incidence of incident X-rays Data of X-ray intensity and scattering diffraction
The data storage unit that stores in advance the θ-axis rotation angle corresponding to
Prepare and At the measurement position, the plane orientation of the substrate to be measured and the incidence of incident X-rays
Emission angle, incident azimuth of incident X-ray, scattered diffraction X-ray intensity data
Read the θ-axis rotation angle corresponding to the data from the data storage
And By controlling the θ-axis rotation mechanism, only the θ-axis rotation angle
A complete counter that rotates the sample stage around the θ axis
X-ray fluorescence spectrometer.