JP2626618C - - Google Patents
Info
- Publication number
- JP2626618C JP2626618C JP2626618C JP 2626618 C JP2626618 C JP 2626618C JP 2626618 C JP2626618 C JP 2626618C
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas
- sample
- lower electrode
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007667 floating Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 85
- 239000007789 gas Substances 0.000 description 79
- 238000000034 method Methods 0.000 description 17
- 210000002381 Plasma Anatomy 0.000 description 15
- 238000005530 etching Methods 0.000 description 14
- 239000003507 refrigerant Substances 0.000 description 14
- 238000001312 dry etching Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 239000012212 insulator Substances 0.000 description 7
- 230000000875 corresponding Effects 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004886 process control Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical Effects 0.000 description 2
- 230000002093 peripheral Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000000630 rising Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003068 static Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910017758 Cu-Si Inorganic materials 0.000 description 1
- 229910017931 Cu—Si Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium(0) Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon(0) Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Family
ID=
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