JP2626573B2 - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus

Info

Publication number
JP2626573B2
JP2626573B2 JP6208982A JP20898294A JP2626573B2 JP 2626573 B2 JP2626573 B2 JP 2626573B2 JP 6208982 A JP6208982 A JP 6208982A JP 20898294 A JP20898294 A JP 20898294A JP 2626573 B2 JP2626573 B2 JP 2626573B2
Authority
JP
Japan
Prior art keywords
chemical solution
substrate processing
heat exchanger
tank
constant temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP6208982A
Other languages
Japanese (ja)
Other versions
JPH0794407A (en
Inventor
智明 村松
健司 菊地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6208982A priority Critical patent/JP2626573B2/en
Publication of JPH0794407A publication Critical patent/JPH0794407A/en
Application granted granted Critical
Publication of JP2626573B2 publication Critical patent/JP2626573B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、半導体ウエハやガラス
基板等の表面に恒温に保持された薬液を供給する基板処
理方法及び基板処理装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing method and a substrate processing apparatus for supplying a chemical solution maintained at a constant temperature to a surface of a semiconductor wafer, a glass substrate or the like.

【0002】[0002]

【従来の技術】図2は、従来の半導体製造装置の熱交換
器の系統図を示す。図において、1は薬液貯蔵槽であっ
て窒素ガスを用いて薬液を圧送する。ここで述べる薬液
とは例えば、ウエハ10の表面に形成されたフオトレジス
を現像するためのアルカリ性の現像液等である。2は
薬液を送液、かつ熱交換するコイル状パイプ3を恒温水
が循環するタンク4内に装着してなる熱交換器、5は所
定の温度に保持された恒温水を循環供給する温度調節
器、6は薬液内の不純物を濾過するフイルタ、7は薬液
の吐出を制御する空気弁、8は薬液の吐出口、9は処理
室であってウエハ10に対する加工装置を内蔵する。
2. Description of the Related Art FIG. 2 shows a system diagram of a heat exchanger of a conventional semiconductor manufacturing apparatus. In the figure, reference numeral 1 denotes a chemical storage tank for pumping a chemical using nitrogen gas. For example, a chemical solution described herein, photo-Regis formed on the surface of the wafer 10
And an alkaline developer for developing the toner. 2 is a heat exchanger in which a coiled pipe 3 for sending a chemical solution and exchanging heat is mounted in a tank 4 for circulating constant temperature water, and 5 is a temperature controller for circulating and supplying constant temperature water maintained at a predetermined temperature. 6, a filter for filtering impurities in the chemical solution, 7 an air valve for controlling the discharge of the chemical solution, 8 a discharge port for the chemical solution, 9 a processing chamber, which incorporates a processing device for the wafer 10.

【0003】従来の薬液配管においては、熱交換器2と
フイルタ6とは分離して配置されており、薬液は供給元
の薬液貯蔵槽1から送液され、熱交換器2にて恒温に温
度調節され、フイルタ6を通過してウエハ10に到達して
いる。そしてウエハ10の加工処理が連続して行われる時
は恒温に温度調節された薬液が順当に吐出口8からウエ
ハ10に対して吐出される。
In a conventional chemical pipe, the heat exchanger 2 and the filter 6 are arranged separately, and the chemical is sent from a chemical storage tank 1 as a supply source, and the temperature is kept constant in the heat exchanger 2. It is adjusted and reaches the wafer 10 through the filter 6. When the processing of the wafer 10 is continuously performed, the chemical solution whose temperature has been adjusted to a constant temperature is discharged from the discharge port 8 to the wafer 10 in order.

【0004】[0004]

【発明が解決しようとする課題】従来の半導体製造装置
の熱交換器の系統によれば、半導体の製造工程の都合で
ウエハ10の加工処理が中断して、薬液の吐出が停止され
ると、フイルタ6内に滞留する薬液の温度が外部環境の
影響を受けて変化してしまう欠点があった。したがっ
て、ウエハ10の加工処理が再開されると、吐出口8から
は所定温度値から外れた温度の薬液が、ウエハ10に吐出
されるため、現像の分布が以前の場合と変わってしまう
という欠点がある。
According to the heat exchanger system of the conventional semiconductor manufacturing apparatus, when the processing of the wafer 10 is interrupted due to the semiconductor manufacturing process and the discharge of the chemical solution is stopped, There is a drawback that the temperature of the chemical solution retained in the filter 6 changes under the influence of the external environment. Therefore, when the processing of the wafer 10 is restarted, a chemical solution having a temperature deviating from the predetermined temperature value is discharged from the discharge port 8 to the wafer 10, so that the distribution of development is different from the previous case. There is.

【0005】本発明は上記従来の欠点に鑑みてなされた
もので、基板の加工処理が中断しても薬液の恒温を保持
可能な基板処理方法及び基板処理装置の提供を目的とす
る。
The present invention has been made in view of the above-mentioned conventional drawbacks, and has as its object to provide a substrate processing method and a substrate processing apparatus capable of maintaining a constant temperature of a chemical solution even when processing of a substrate is interrupted.

【0006】[0006]

【課題を解決するための手段】図1は、本発明の構成を
示す要部断面図であり、上記課題は以下に示す基板処理
方法及び基板処理装置により解決される。すなわち、熱
交換器を通して恒温保持した薬液を基板上に供給して行
う基板処理方法であって、該薬液を定温に保持しつつ
熱交換器に内設されたフィルタによって濾過し、該濾過
した薬液を、基板表面に吐出させる基板処理方法であ
る。
FIG. 1 is a sectional view of a main part showing the structure of the present invention. The above-mentioned object is solved by the following substrate processing method and substrate processing apparatus. In other words, the chemical liquid isothermal holding through a heat exchanger to a substrate processing method performed by supplied onto the substrate, while maintaining the liquid chemical in a constant temperature the
It filtered through internally provided to filter the heat exchanger, the filtrate
This is a substrate processing method in which the chemical solution is discharged onto the substrate surface .

【0007】また、恒温に保持された薬液を該薬液の吐
出口(8) から基板(10)上に供給する基板処理装置におい
て、前記薬液を送液、かつ熱交換を行うコイル状パイプ
(3)が、恒温水が循環するタンク(4) 内に装着されてい
熱交換器(2) と、前記コイル状パイプ(3) に連結さ
れ、且つ前記タンク(4) 内に併設されているフィルタ
(6) と、前記熱交換器(2) の出口と前記薬液の吐出口
(8) との間に薬液保温機構(11)を備えた配管とからなる
基板処理装置である。
Further, in a substrate processing apparatus for supplying a chemical solution kept at a constant temperature from a discharge port (8) of the chemical solution onto a substrate (10), a coiled pipe for sending the chemical solution and exchanging heat.
(3) is installed in the tank (4) through which constant temperature water circulates.
That the heat exchanger (2), coupled to said coiled pipe (3), is and parallel in the tank (4) in the filter
(6), the outlet of the heat exchanger (2) and the outlet of the chemical solution
And (8) a pipe provided with a chemical solution warming mechanism (11).

【0008】[0008]

【作用】フイルタ6は恒温水が循環するタンク4内にコ
イル状パイプ3と共に併設され、かつ水没しているた
め、薬液の送液,滞留に関係なく循環する恒温水によっ
て温度調節がなされ、また、薬液がタンク4の外部に移
動しても薬液の吐出口8まで薬液保温機構11を備えた配
管により送液されるから配管内の薬液も恒温に保持され
る。薬液の吐出を制御する空気弁7は薬液保温機構11の
送液終端部と吐出口8との間に設けられているから外部
環境の影響による薬液の温度変化は防止される。
The filter 6 is provided together with the coiled pipe 3 in the tank 4 in which the constant-temperature water circulates and is submerged. Even when the chemical solution moves to the outside of the tank 4, the chemical solution is sent to the chemical solution discharge port 8 by the piping provided with the chemical solution warming mechanism 11, so that the chemical solution in the piping is also maintained at a constant temperature. Since the air valve 7 for controlling the discharge of the chemical solution is provided between the liquid sending end of the chemical solution heat retaining mechanism 11 and the discharge port 8, the temperature change of the chemical solution due to the external environment is prevented.

【0009】[0009]

【実施例】以下本発明の実施例を図面によって詳述す
る。なお、構成、動作の説明を理解し易くするために全
図を通じて同一部分には同一符号を付してその重複説明
を省略する。図1は本発明の構成を示す要部断面図であ
る。図において、温度調節器5からタンク4に供給され
る恒温水はタンク4の下部から矢印A方向に注入され、
タンク4内を循環した恒温水はタンク4の上部から矢印
B方向に排出されて温度調節器5に戻る。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. To facilitate understanding of the description of the configuration and operation, the same portions are denoted by the same reference symbols throughout the drawings, and redundant description will be omitted. FIG. 1 is a sectional view of a main part showing a configuration of the present invention. In the figure, constant temperature water supplied from the temperature controller 5 to the tank 4 is injected from the lower part of the tank 4 in the direction of arrow A,
The constant temperature water circulated in the tank 4 is discharged from the upper part of the tank 4 in the direction of arrow B and returns to the temperature controller 5.

【0010】タンク4内に装着されたコイル状パイプ3
は螺旋状に配管され、その上部に薬液貯蔵槽1から薬液
が送液され、その最下部から立ち上がる配管の終端にフ
イルタ6がタンク4内で連結され、フイルタ6はその全
容積の外周を循環する恒温水により保温される結果、フ
イルタ6内部の薬液も恒温保持されるようになる。フイ
ルタ6の出口は、配管がタンク6を貫通して薬液保温機
構11に連結される。薬液保温機構11は二重構造の配管と
薬液の送液機構と恒温水循環機構とからなる。二重構造
の配管は(a) 拡大断面図に示すように、以下薬液を送液
する内側の配管を内管と呼称し、その内管を包む外側の
配管を外管と呼称する。外管のタンク4側端部には内管
と外管との間隙を循環する恒温水を排出するためのT字
型継手11a が連結されて矢印D方向に排出する。外管の
他方の端部には恒温水を注入するためのT字型継手11b
が連結されて矢印C方向に注入している。(b) 拡大断面
図はT字型継手11b の詳細構造図を示す。薬液保温機構
11の内管の先端部は空気弁7を介して吐出口8に連結さ
れている。
[0010] Coiled pipe 3 mounted in tank 4
Is spirally piped, a chemical solution is sent from the chemical solution storage tank 1 to the upper part thereof, and a filter 6 is connected in the tank 4 to the end of the pipe rising from the lowermost part thereof. As a result, the chemical solution inside the filter 6 is also kept at a constant temperature. The outlet of the filter 6 is connected to a chemical solution warming mechanism 11 through a pipe passing through the tank 6. The chemical solution heat retaining mechanism 11 includes a double-structured pipe, a chemical solution sending mechanism, and a constant temperature water circulation mechanism. As shown in the enlarged sectional view of the double-structured pipe (a), an inner pipe for supplying a chemical solution is hereinafter referred to as an inner pipe, and an outer pipe surrounding the inner pipe is referred to as an outer pipe. A T-shaped joint 11a for discharging constant-temperature water circulating in the gap between the inner pipe and the outer pipe is connected to the end of the outer pipe on the tank 4 side, and discharges in the direction of arrow D. T-shaped joint 11b for injecting constant temperature water into the other end of the outer tube
Are connected and injected in the direction of arrow C. (b) The enlarged sectional view shows a detailed structural view of the T-shaped joint 11b. Chemical insulation mechanism
The distal end of the inner pipe 11 is connected to the discharge port 8 via the air valve 7.

【0011】次に、熱交換器の他の実施例について、図
3を参照しつつ説明する。図3は、他の熱処理交換器の
例であり、はに示した熱交換器のX−X断面図、
は熱交換器の側断面図である。図中、図1において用い
た符号と同じものは、同様なものを示している。にお
いて、図示しない温度調節器からタンク4に供給される
恒温水はタンク4の下部から矢印A方向に注入され、タ
ンク4内を循環した恒温水はタンク4の上部から矢印B
方向に排出されて温度調節器5に戻る。
Next, another embodiment of the heat exchanger will be described with reference to FIG. FIG. 3 is an example of another heat treatment exchanger, and is a sectional view taken along line XX of the heat exchanger shown in FIG.
FIG. 3 is a side sectional view of the heat exchanger. In the figure, the same components as those used in FIG. 1 indicate the same components. , Constant temperature water supplied from a temperature controller (not shown) to the tank 4 is injected from the lower part of the tank 4 in the direction of arrow A, and the constant temperature water circulated in the tank 4 is supplied from the upper part of the tank 4 to the arrow B
It is discharged in the direction and returns to the temperature controller 5.

【0012】タンク4内に装着されたパイプ31は蛇行し
て配管され、図示しない薬液貯蔵槽から薬液が送液さ
れ、その最下部から立ち上がる配管の終端にフイルタ6
がタンク4内で連結され、フイルタ6はその全容積の外
周を循環する恒温水により保温される結果、フイルタ6
内部の薬液も恒温保持されるようになる。以上説明した
ように、タンク4内にパイプを螺旋状または蛇行させる
ことによって、パイプの相対的距離を長くすることによ
って、より均一な温度に薬液を温調することができる。
A pipe 31 mounted in the tank 4 is arranged in a meandering manner, a chemical solution is fed from a chemical solution storage tank (not shown), and a filter 6 is provided at the end of the pipe rising from the bottom.
Are connected in the tank 4, and the filter 6 is kept warm by constant temperature water circulating around the entire periphery of the filter 6.
The internal chemical is also kept at a constant temperature. As described above, by making the pipe spiral or meandering in the tank 4 to increase the relative distance between the pipes, the temperature of the chemical solution can be controlled to a more uniform temperature.

【0013】また、フイルタの周囲に螺旋状または蛇行
させたパイプを設けることにより、熱交換器の容積を大
きくする必要がなくなる。さらに、熱交換器とフイルタ
とを一体化させることで、基板処理装置全体の容積を小
さくすることができ、また、熱交換器とフイルタとを同
じ温調水で温調することが可能であるため、別途温度制
御装置等を用いることなく、温度制御することが可能に
なる。
By providing a spiral or meandering pipe around the filter, it is not necessary to increase the volume of the heat exchanger. Further, by integrating the heat exchanger and the filter, the volume of the entire substrate processing apparatus can be reduced, and the temperature of the heat exchanger and the filter can be controlled with the same temperature control water. Therefore, the temperature can be controlled without using a separate temperature control device or the like.

【0014】[0014]

【発明の効果】以上の説明から明らかなように本発明に
よれば、基板の加工処理が中断しても薬液の恒温を保持
することが可能となり、プロセス処理の信頼性の向上に
寄与し、半導体製造工程の短縮に効果がある。
As is clear from the above description, according to the present invention, it becomes possible to maintain the constant temperature of the chemical solution even when the processing of the substrate is interrupted, which contributes to the improvement of the reliability of the process, This is effective in shortening the semiconductor manufacturing process.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の構成を示す要部断面図である。FIG. 1 is a sectional view of a main part showing a configuration of the present invention.

【図2】従来の半導体製造装置の熱交換器の系統図であ
る。
FIG. 2 is a system diagram of a heat exchanger of a conventional semiconductor manufacturing apparatus.

【図3】他の熱交換器の例を示す図である。FIG. 3 is a diagram showing an example of another heat exchanger.

【符号の説明】[Explanation of symbols]

2 熱交換器 3 コイル状パイプ 4 タンク 6 フイルタ 8 吐出口 10 ウエハ 11 薬液保温機構 31 パイプ 2 Heat exchanger 3 Coiled pipe 4 Tank 6 Filter 8 Discharge port 10 Wafer 11 Chemical heat insulation mechanism 31 Pipe

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭61−125017(JP,A) 特開 昭61−147257(JP,A) 特開 昭60−247642(JP,A) 特開 昭62−279632(JP,A) 特開 昭61−214520(JP,A) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-61-125017 (JP, A) JP-A-61-147257 (JP, A) JP-A-60-247642 (JP, A) JP-A-62 279632 (JP, A) JP-A-61-214520 (JP, A)

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 熱交換器を通して恒温保持した薬液を基
板上に供給して行う基板処理方法であって、 該熱交換器内において、該薬液を所定温度に保持しつつ
該熱交換器に内設されたフィルタによって不純物を濾過
し、該濾過した薬液を、基板表面に吐出させる 基板処理方
法。
1. A substrate processing method for supplying a chemical solution maintained at a constant temperature to a substrate through a heat exchanger, wherein the chemical solution is maintained at a predetermined temperature in the heat exchanger.
A substrate processing method in which impurities are filtered by a filter provided in the heat exchanger , and the filtered chemical solution is discharged onto a substrate surface .
【請求項2】 恒温に保持された薬液を該薬液の吐出口
(8) から基板(10)上に供給する基板処理装置において、 前記薬液を送液、かつ熱交換を行うコイル状パイプ(3)
が、恒温水が循環するタンク(4) 内に装着されている
交換器(2) と、 前記コイル状パイプ(3) に連結され、且つ前記タンク
(4) 内に併設されているフィルタ(6) と、 前記熱交換器(2) の出口と前記薬液の吐出口(8) との間
に薬液保温機構(11)を備えた配管とからなる基板処理装
置。
2. A chemical solution kept at a constant temperature is discharged from said chemical solution outlet.
In the substrate processing apparatus for supplying the chemical solution from (8) onto the substrate (10), a coiled pipe (3) for sending the chemical solution and performing heat exchange
Is connected to a heat exchanger (2) mounted in a tank (4) through which constant temperature water circulates, and the coiled pipe (3), and
(4) a filter (6) provided in the inside, and a pipe provided with a chemical solution warming mechanism (11) between an outlet of the heat exchanger (2) and a discharge port (8) of the chemical solution. Substrate processing equipment.
JP6208982A 1994-09-01 1994-09-01 Substrate processing method and substrate processing apparatus Expired - Fee Related JP2626573B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6208982A JP2626573B2 (en) 1994-09-01 1994-09-01 Substrate processing method and substrate processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6208982A JP2626573B2 (en) 1994-09-01 1994-09-01 Substrate processing method and substrate processing apparatus

Publications (2)

Publication Number Publication Date
JPH0794407A JPH0794407A (en) 1995-04-07
JP2626573B2 true JP2626573B2 (en) 1997-07-02

Family

ID=16565380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6208982A Expired - Fee Related JP2626573B2 (en) 1994-09-01 1994-09-01 Substrate processing method and substrate processing apparatus

Country Status (1)

Country Link
JP (1) JP2626573B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107121897A (en) * 2017-05-25 2017-09-01 上海华力微电子有限公司 A kind of photoresist circuit design

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60247642A (en) * 1984-05-24 1985-12-07 Hoya Corp Spraying method
JPS61125017A (en) * 1984-11-22 1986-06-12 Hitachi Tokyo Electronics Co Ltd Coating apparatus
JPS61147257A (en) * 1984-12-20 1986-07-04 Fujitsu Ltd Developing device

Also Published As

Publication number Publication date
JPH0794407A (en) 1995-04-07

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