JP2617506B2 - Receiving sensitivity switching circuit - Google Patents
Receiving sensitivity switching circuitInfo
- Publication number
- JP2617506B2 JP2617506B2 JP63011378A JP1137888A JP2617506B2 JP 2617506 B2 JP2617506 B2 JP 2617506B2 JP 63011378 A JP63011378 A JP 63011378A JP 1137888 A JP1137888 A JP 1137888A JP 2617506 B2 JP2617506 B2 JP 2617506B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- fet
- output
- differential amplifier
- current mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はAM受信器の受信感度切り換えに関し、特にFE
Tを使用したRF増幅回路の受信感度切り換えに関するも
のである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to switching of reception sensitivity of an AM receiver, and
The present invention relates to switching of reception sensitivity of an RF amplifier circuit using T.
AM受信器、特に車載用AM受信器においては、電界強度
が弱い放送を除く機能をそなえたものが多く、それらは
受信感度を切り換ることにより、その機能をはたしてい
た。Many AM receivers, especially in-vehicle AM receivers, have a function for excluding broadcasts with weak electric field strength, and these functions have been achieved by switching the reception sensitivity.
第2図は従来例である。ここで受信感度を切り換える
場合にはスイッチ4を導通し、トランジスタ3を動作さ
せることにより、トランジスタ17のベース電位を下げ
る。それによって、トランジスタ17はOFFとなり、トラ
ンジスタ15、トランジスタ16がONとなる,信号はトラン
ジスタ15とトランジスタ16のエミッタ面積比によって分
割され、トランジスタ16を通った信号がコイル10を通し
て混合回路へ送られる。ここでトランジスタ15、および
トランジスタ16のエミッタ面積比を希望する分割比に設
定しておけば求める感度切り換えをおこなうことができ
る。FIG. 2 shows a conventional example. When the reception sensitivity is switched, the switch 4 is turned on and the transistor 3 is operated to lower the base potential of the transistor 17. As a result, the transistor 17 is turned off and the transistors 15 and 16 are turned on. The signal is divided by the emitter area ratio of the transistors 15 and 16, and the signal passing through the transistor 16 is sent to the mixing circuit through the coil 10. Here, if the emitter area ratio of the transistor 15 and the transistor 16 is set to a desired division ratio, the required sensitivity can be switched.
従来例では、第2図の従来例の様な欠点は発生しない
が、第2図の従来例よりFET8のドレイン電圧がトランジ
スタのベースエミッタ間電圧だけ低くなる為、電源11,1
2の電圧が低い場合、またはFET8のピンチオフ電圧が大
きい場合にはFET8のドレイン、ソース間電圧が小さくな
り使用条件が悪くなる為感度、ノイズ特性が悪化すると
いう欠点がある。Although the conventional example does not suffer from the drawbacks of the conventional example shown in FIG. 2, the drain voltage of the FET 8 is lower than the conventional example shown in FIG.
When the voltage of 2 is low, or when the pinch-off voltage of the FET 8 is large, the voltage between the drain and the source of the FET 8 becomes small and the use condition is deteriorated.
本発明の切換え回路は、FETのドレインにエミッタを
接続し、コレクタをコイルに接続した第1,第2のトラン
ジスタと、前記ドレインにエミッタを接続し、コレクタ
を電源に接続した第3のトランジスタと、第1のカレン
トミラー回路を電源と差動増幅器の第1の出力間に接続
し、該第1のカレントミラー回路の出力を前記第1のト
ランジスタのベースへ接続しかつ第1の抵抗を介して接
地し第2のカレントミラー回路を電源と前記差動増幅器
の第2の出力間に接続し、該第2のカレントミラー回路
の出力を前記第2,第3のトランジスタのベースへ接続
し、且つ第2の抵抗を介して接続し前記差動増幅器のベ
ース電位を制御する制御回路と前記差動増幅器の共通エ
ミッタに接続された電流制御型AGC回路を有している。The switching circuit according to the present invention includes a first transistor and a second transistor each having an emitter connected to a drain of a FET and a collector connected to a coil, and a third transistor having an emitter connected to the drain and a collector connected to a power supply. Connecting a first current mirror circuit between a power supply and a first output of the differential amplifier, connecting an output of the first current mirror circuit to a base of the first transistor, and via a first resistor. Connect the second current mirror circuit between the power supply and the second output of the differential amplifier, connect the output of the second current mirror circuit to the bases of the second and third transistors, A control circuit connected via a second resistor to control a base potential of the differential amplifier; and a current control type AGC circuit connected to a common emitter of the differential amplifier.
次に第1図を用いて実施例を説明する。 Next, an embodiment will be described with reference to FIG.
第1図の実施例では第2図の示した従来例と同様にト
ランジスタ15,トランジスタ16のエミッタ面積比で分割
比を決めている。また、トランジスタ25およびトランジ
スタ26の出力電流を より大きく設定すれば、トランジスタ25またはトランジ
スタ26の動作時に同トランジスタは飽和状態となりトラ
ンジスタ15,16,17のベース電位は(電源29の電圧)−
(トランジスタ25,26のVCE(sat))となり電源29の電圧
が低い場合またはFET8のピンチオフ電圧が大きい場合に
おいても、FET8のドレイン・ソース間電圧が大きくでき
る為、第2図で示した従来例の欠点は解決される。In the embodiment shown in FIG. 1, the division ratio is determined by the emitter area ratio of the transistors 15 and 16, as in the conventional example shown in FIG. Also, the output currents of the transistors 25 and 26 are If it is set larger, the transistor becomes saturated when the transistor 25 or the transistor 26 operates, and the base potential of the transistors 15, 16, 17 becomes (voltage of the power supply 29) −
(V CE (sat) of the transistors 25 and 26 ) and the drain-source voltage of the FET 8 can be increased even when the voltage of the power supply 29 is low or the pinch-off voltage of the FET 8 is large. The disadvantages of the example are solved.
以上説明したように本発明はカスコードトランジスタ
15,16,17のベースをトランジスタ25,26でバイアスする
ことにより、FET8の特性をおとさず、且つアンテナ1の
インピーダンスによらずに受信感度を切り換えることが
できる効果がある。As described above, the present invention provides a cascode transistor
By biasing the bases of the transistors 15, 16, 17 with the transistors 25, 26, there is an effect that the reception sensitivity can be switched regardless of the characteristics of the FET 8 and regardless of the impedance of the antenna 1.
第1図は本発明の一実施例図、第2図は従来例図であ
る。 1……アンテナ、2……抵抗、4……スイッチ、5,11,1
2,29……電源、6……カップリングコンデンサ、7,13,1
9,20,27,28……バイアス抵抗、8……FET、9……カス
コードトランジスタ、10……コイル、14……AGC回路、
3,15,16,17,21,22,25,26……トランジスタ、18,23,24…
…ダイオード。FIG. 1 is a diagram of an embodiment of the present invention, and FIG. 2 is a diagram of a conventional example. 1 ... antenna, 2 ... resistor, 4 ... switch, 5,11,1
2,29 ... Power supply, 6 ... Coupling capacitor, 7,13,1
9, 20, 27, 28 ... bias resistor, 8 ... FET, 9 ... cascode transistor, 10 ... coil, 14 ... AGC circuit,
3,15,16,17,21,22,25,26 …… Transistor, 18,23,24…
…diode.
Claims (1)
アンテナに接続しソースを接地したFETと、前記FETのド
レインにエミッタを接続しコレクタをコイルに接続した
第1および第2のトランジスタと、前記FETのドレイン
にエミッタを接続しコレクタを電源に接続した第3のト
ランジスタと、第1のカレントミラー回路を電源と差動
増幅器の第1の出力間に接続し、該第1のカレントミラ
ー回路の出力を前記第1のトランジスタのベースへ接続
し、且つ第1の抵抗を介して接地し、第2のカレントミ
ラー回路を電源と前記差動増幅器の第2の出力間に接続
し、該第2のカレントミラー回路の出力を前記第2,第3
のトランジスタのベースへ接続し、且つ第2の抵抗を介
して接地し、前記差動増幅器のベース電位を制御する制
御回路と、前記差動増幅器の共通エミッタに接続された
電流制御型自動利得制御回路とを有する受信感度切り換
え回路。1. An FET having a gate connected to an antenna through a coupling capacitor and having a source grounded, first and second transistors having an emitter connected to a drain of the FET and a collector connected to a coil, and a drain connected to the FET. A third transistor having an emitter connected to the collector and a collector connected to a power supply, and a first current mirror circuit connected between the power supply and a first output of the differential amplifier, and an output of the first current mirror circuit connected to the third transistor. A second current mirror circuit connected between a power supply and a second output of the differential amplifier, wherein the second current mirror circuit is connected to a base of the first transistor and grounded via a first resistor; The output of the circuit is
A control circuit for controlling the base potential of the differential amplifier connected to the base of the transistor and grounded via a second resistor, and a current-controlled automatic gain control connected to a common emitter of the differential amplifier And a receiving sensitivity switching circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63011378A JP2617506B2 (en) | 1988-01-19 | 1988-01-19 | Receiving sensitivity switching circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63011378A JP2617506B2 (en) | 1988-01-19 | 1988-01-19 | Receiving sensitivity switching circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01185028A JPH01185028A (en) | 1989-07-24 |
JP2617506B2 true JP2617506B2 (en) | 1997-06-04 |
Family
ID=11776349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63011378A Expired - Lifetime JP2617506B2 (en) | 1988-01-19 | 1988-01-19 | Receiving sensitivity switching circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2617506B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003060456A (en) * | 2001-08-16 | 2003-02-28 | Matsushita Electric Ind Co Ltd | Variable gain amplifier circuit |
-
1988
- 1988-01-19 JP JP63011378A patent/JP2617506B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003060456A (en) * | 2001-08-16 | 2003-02-28 | Matsushita Electric Ind Co Ltd | Variable gain amplifier circuit |
Also Published As
Publication number | Publication date |
---|---|
JPH01185028A (en) | 1989-07-24 |
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