JP2607469B2 - ダイヤモンドコンパクトおよびその製造方法 - Google Patents
ダイヤモンドコンパクトおよびその製造方法Info
- Publication number
- JP2607469B2 JP2607469B2 JP60503702A JP50370285A JP2607469B2 JP 2607469 B2 JP2607469 B2 JP 2607469B2 JP 60503702 A JP60503702 A JP 60503702A JP 50370285 A JP50370285 A JP 50370285A JP 2607469 B2 JP2607469 B2 JP 2607469B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- compact
- pressure
- temperature
- binder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010432 diamond Substances 0.000 title claims description 262
- 229910003460 diamond Inorganic materials 0.000 title claims description 254
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000011230 binding agent Substances 0.000 claims description 84
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 66
- 239000013078 crystal Substances 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 65
- 239000010439 graphite Substances 0.000 claims description 53
- 229910002804 graphite Inorganic materials 0.000 claims description 53
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 239000004033 plastic Substances 0.000 claims description 30
- 239000000203 mixture Substances 0.000 claims description 26
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 24
- 238000002844 melting Methods 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 19
- 229910052702 rhenium Inorganic materials 0.000 claims description 19
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 18
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 18
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- 230000009466 transformation Effects 0.000 claims description 14
- 239000012071 phase Substances 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 239000010937 tungsten Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 229910052741 iridium Inorganic materials 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 6
- 230000000670 limiting effect Effects 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 230000007850 degeneration Effects 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 239000008240 homogeneous mixture Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims 1
- 238000003746 solid phase reaction Methods 0.000 claims 1
- 238000010671 solid-state reaction Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 32
- 239000000463 material Substances 0.000 description 25
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 22
- 229910052580 B4C Inorganic materials 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 11
- 239000002775 capsule Substances 0.000 description 11
- 230000002829 reductive effect Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 150000001247 metal acetylides Chemical class 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 230000035484 reaction time Effects 0.000 description 9
- 230000006872 improvement Effects 0.000 description 8
- 239000011044 quartzite Substances 0.000 description 8
- 238000005553 drilling Methods 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 7
- 239000010438 granite Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000011435 rock Substances 0.000 description 7
- 238000005299 abrasion Methods 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 239000006104 solid solution Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 238000007514 turning Methods 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910000676 Si alloy Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 238000005087 graphitization Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000005056 compaction Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000000386 microscopy Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910039444 MoC Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 238000001493 electron microscopy Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000011017 operating method Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000454 talc Substances 0.000 description 2
- 229910052623 talc Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- 241000070228 Geophis Species 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- VSYMNDBTCKIDLT-UHFFFAOYSA-N [2-(carbamoyloxymethyl)-2-ethylbutyl] carbamate Chemical compound NC(=O)OCC(CC)(CC)COC(N)=O VSYMNDBTCKIDLT-UHFFFAOYSA-N 0.000 description 1
- XCVKVYNICFBSJQ-UHFFFAOYSA-N [Re].[C] Chemical group [Re].[C] XCVKVYNICFBSJQ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- -1 borides Chemical class 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 1
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003413 degradative effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/6303—Inorganic additives
- C04B35/6316—Binders based on silicon compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/5607—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on refractory metal carbides
- C04B35/5626—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on refractory metal carbides based on tungsten carbides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/628—Coating the powders or the macroscopic reinforcing agents
- C04B35/62802—Powder coating materials
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/6303—Inorganic additives
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/65—Reaction sintering of free metal- or free silicon-containing compositions
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/062—Diamond
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/0685—Crystal sintering
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Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AUPG677284 | 1984-08-24 | ||
| AU6772/84 | 1984-08-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62500012A JPS62500012A (ja) | 1987-01-08 |
| JP2607469B2 true JP2607469B2 (ja) | 1997-05-07 |
Family
ID=3770731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60503702A Expired - Lifetime JP2607469B2 (ja) | 1984-08-24 | 1985-08-23 | ダイヤモンドコンパクトおよびその製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US4874398A (Direct) |
| EP (1) | EP0191067B1 (Direct) |
| JP (1) | JP2607469B2 (Direct) |
| AU (1) | AU583299B1 (Direct) |
| DE (1) | DE3585226D1 (Direct) |
| DK (1) | DK160324C (Direct) |
| IN (1) | IN165203B (Direct) |
| WO (1) | WO1986001433A1 (Direct) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU601561B2 (en) * | 1987-03-23 | 1990-09-13 | Australian National University, The | Diamond compacts |
| EP0308440B1 (en) * | 1987-03-23 | 1991-06-05 | The Australian National University | Diamond compacts |
| JP2801326B2 (ja) * | 1988-08-17 | 1998-09-21 | ザ・オーストラリアン・ナショナル・ユニバーシティ | 低電気抵抗を有するダイアモンド成形体 |
| US5130771A (en) * | 1988-10-11 | 1992-07-14 | Amoco Corporation | Diamond composite heat sink for use with semiconductor devices |
| ATE87502T1 (de) * | 1989-12-11 | 1993-04-15 | De Beers Ind Diamond | Schleifprodukte. |
| US5126207A (en) * | 1990-07-20 | 1992-06-30 | Norton Company | Diamond having multiple coatings and methods for their manufacture |
| US5718976A (en) * | 1991-05-03 | 1998-02-17 | Advanced Refractory Technologies, Inc. | Erosion resistant diamond-like nanocomposite coatings for optical components |
| US5352493A (en) * | 1991-05-03 | 1994-10-04 | Veniamin Dorfman | Method for forming diamond-like nanocomposite or doped-diamond-like nanocomposite films |
| US5728465A (en) * | 1991-05-03 | 1998-03-17 | Advanced Refractory Technologies, Inc. | Diamond-like nanocomposite corrosion resistant coatings |
| US5786068A (en) * | 1991-05-03 | 1998-07-28 | Advanced Refractory Technologies, Inc. | Electrically tunable coatings |
| US5266236A (en) * | 1991-10-09 | 1993-11-30 | General Electric Company | Thermally stable dense electrically conductive diamond compacts |
| WO1993023204A1 (en) * | 1992-05-15 | 1993-11-25 | Tempo Technology Corporation | Diamond compact |
| US5455738A (en) * | 1993-07-28 | 1995-10-03 | E-Systems, Inc. | High thermal conductivity, matched CTE. low density mounting plate for a semiconductor circuit |
| US6468642B1 (en) | 1995-10-03 | 2002-10-22 | N.V. Bekaert S.A. | Fluorine-doped diamond-like coatings |
| US5795648A (en) * | 1995-10-03 | 1998-08-18 | Advanced Refractory Technologies, Inc. | Method for preserving precision edges using diamond-like nanocomposite film coatings |
| US5638251A (en) * | 1995-10-03 | 1997-06-10 | Advanced Refractory Technologies, Inc. | Capacitive thin films using diamond-like nanocomposite materials |
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| US6102140A (en) * | 1998-01-16 | 2000-08-15 | Dresser Industries, Inc. | Inserts and compacts having coated or encrusted diamond particles |
| US6138779A (en) * | 1998-01-16 | 2000-10-31 | Dresser Industries, Inc. | Hardfacing having coated ceramic particles or coated particles of other hard materials placed on a rotary cone cutter |
| US6170583B1 (en) | 1998-01-16 | 2001-01-09 | Dresser Industries, Inc. | Inserts and compacts having coated or encrusted cubic boron nitride particles |
| US6416560B1 (en) | 1999-09-24 | 2002-07-09 | 3M Innovative Properties Company | Fused abrasive bodies comprising an oxygen scavenger metal |
| US6575353B2 (en) | 2001-02-20 | 2003-06-10 | 3M Innovative Properties Company | Reducing metals as a brazing flux |
| GB2409675B (en) * | 2002-09-06 | 2007-04-25 | Element Six Ltd | Modification of the colour of a single crystal CVD diamond |
| US20050189647A1 (en) * | 2002-10-11 | 2005-09-01 | Chien-Min Sung | Carbonaceous composite heat spreader and associated methods |
| US7173334B2 (en) | 2002-10-11 | 2007-02-06 | Chien-Min Sung | Diamond composite heat spreader and associated methods |
| US20060113546A1 (en) * | 2002-10-11 | 2006-06-01 | Chien-Min Sung | Diamond composite heat spreaders having low thermal mismatch stress and associated methods |
| KR20050084845A (ko) * | 2002-10-11 | 2005-08-29 | 치엔 민 성 | 탄소질 열 확산기 및 관련 방법 |
| US7959841B2 (en) | 2003-05-30 | 2011-06-14 | Los Alamos National Security, Llc | Diamond-silicon carbide composite and method |
| US6939506B2 (en) | 2003-05-30 | 2005-09-06 | The Regents Of The University Of California | Diamond-silicon carbide composite and method for preparation thereof |
| US9103172B1 (en) | 2005-08-24 | 2015-08-11 | Us Synthetic Corporation | Polycrystalline diamond compact including a pre-sintered polycrystalline diamond table including a nonmetallic catalyst that limits infiltration of a metallic-catalyst infiltrant therein and applications therefor |
| US7635035B1 (en) | 2005-08-24 | 2009-12-22 | Us Synthetic Corporation | Polycrystalline diamond compact (PDC) cutting element having multiple catalytic elements |
| US8734552B1 (en) | 2005-08-24 | 2014-05-27 | Us Synthetic Corporation | Methods of fabricating polycrystalline diamond and polycrystalline diamond compacts with a carbonate material |
| US7998573B2 (en) | 2006-12-21 | 2011-08-16 | Us Synthetic Corporation | Superabrasive compact including diamond-silicon carbide composite, methods of fabrication thereof, and applications therefor |
| CA2674999A1 (en) * | 2007-02-05 | 2008-08-14 | Element Six (Production) (Pty) Ltd | Polycrystalline diamond (pcd) materials |
| US7791188B2 (en) | 2007-06-18 | 2010-09-07 | Chien-Min Sung | Heat spreader having single layer of diamond particles and associated methods |
| PL2540689T3 (pl) * | 2007-07-17 | 2016-10-31 | Kompozyt ceramiczny zawierający SiC-diament połączony z inną częścią | |
| CA2688960A1 (en) * | 2008-12-17 | 2010-06-17 | David Ballantyne | Multi-element diamond reference standard |
| US8216677B2 (en) | 2009-03-30 | 2012-07-10 | Us Synthetic Corporation | Polycrystalline diamond compacts, methods of making same, and applications therefor |
| US8505654B2 (en) | 2009-10-09 | 2013-08-13 | Element Six Limited | Polycrystalline diamond |
| US20110283629A1 (en) * | 2010-05-19 | 2011-11-24 | Diamond Innovations, Inc. | High Strength Diamond-SiC Compacts and Method of Making Same |
| US8522900B2 (en) * | 2010-09-17 | 2013-09-03 | Varel Europe S.A.S. | High toughness thermally stable polycrystalline diamond |
| US9006086B2 (en) | 2010-09-21 | 2015-04-14 | Chien-Min Sung | Stress regulated semiconductor devices and associated methods |
| WO2012040374A2 (en) | 2010-09-21 | 2012-03-29 | Ritedia Corporation | Superabrasive tools having substantially leveled particle tips and associated methods |
| US8778784B2 (en) | 2010-09-21 | 2014-07-15 | Ritedia Corporation | Stress regulated semiconductor devices and associated methods |
| US9701043B2 (en) | 2012-04-24 | 2017-07-11 | Tokyo Seimitsu Co., Ltd. | Dicing blade |
| KR102022754B1 (ko) * | 2012-06-15 | 2019-09-18 | 가부시키가이샤 토쿄 세이미쯔 | 다이싱 장치 및 다이싱 방법 |
| KR102613594B1 (ko) * | 2015-01-28 | 2023-12-13 | 다이아몬드 이노베이션즈, 인크. | 취성 세라믹-결합 다이아몬드 복합 입자들 및 상기 복합 입자들을 제조하는 방법들 |
| WO2017032841A1 (en) | 2015-08-26 | 2017-03-02 | Sandvik Intellectual Property Ab | A method of producing a component of a composite of diamond and a binder |
| CN108188942B (zh) * | 2017-12-18 | 2022-12-13 | 西安锐凝超硬工具科技有限公司 | 一种用于切割bga封装的含有金属结合剂的金刚石切割片的制备方法 |
| DE102018203882A1 (de) * | 2018-03-14 | 2019-09-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von Hartstoffpartikeln aus SiC-gebundenem Diamant, mit dem Verfahren hergestellte Hartstoffpartikel, mit den Hartstoffpartikeln hergestellte poröse Bauteile sowie deren Verwendung |
| CN116655381B (zh) * | 2023-03-28 | 2025-07-25 | 郑州磨料磨具磨削研究所有限公司 | 一种高性能聚晶金刚石的制备工艺 |
| CN118895435B (zh) * | 2024-08-14 | 2025-01-21 | 苏州哈腾科技有限公司 | 一种铝基金刚石复合材料及其制备方法 |
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| US4151686A (en) | 1978-01-09 | 1979-05-01 | General Electric Company | Silicon carbide and silicon bonded polycrystalline diamond body and method of making it |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3574580A (en) * | 1968-11-08 | 1971-04-13 | Atomic Energy Commission | Process for producing sintered diamond compact and products |
| CA1070123A (en) * | 1969-04-17 | 1980-01-22 | Howard T. Hall | Diamond compacts |
| US4142869A (en) * | 1973-12-29 | 1979-03-06 | Vereschagin Leonid F | Compact-grained diamond material |
| AU518306B2 (en) * | 1977-05-04 | 1981-09-24 | Sumitomo Electric Industries, Ltd. | Sintered compact for use ina cutting tool anda method of producing thesame |
| IL55719A0 (en) * | 1977-10-21 | 1978-12-17 | Gen Electric | Polycrystalline daimond bady/silicon carbide or silicon nitride substrate composite and process for preparing it |
| US4168957A (en) * | 1977-10-21 | 1979-09-25 | General Electric Company | Process for preparing a silicon-bonded polycrystalline diamond body |
| IN150647B (Direct) * | 1977-10-21 | 1982-11-20 | Gen Electric | |
| US4124401A (en) * | 1977-10-21 | 1978-11-07 | General Electric Company | Polycrystalline diamond body |
| US4167399A (en) * | 1977-10-21 | 1979-09-11 | General Electric Company | Process for preparing a polycrystalline diamond body |
| US4241135A (en) * | 1979-02-09 | 1980-12-23 | General Electric Company | Polycrystalline diamond body/silicon carbide substrate composite |
| US4231195A (en) * | 1979-05-24 | 1980-11-04 | General Electric Company | Polycrystalline diamond body and process |
| US4248606A (en) * | 1979-08-23 | 1981-02-03 | General Electric Company | Supported diamond |
| US4259090A (en) * | 1979-11-19 | 1981-03-31 | General Electric Company | Method of making diamond compacts for rock drilling |
| JPS5747771A (en) * | 1980-09-06 | 1982-03-18 | Sumitomo Electric Industries | Sintered body for linedrawing dice and manufacture |
| US4518659A (en) * | 1982-04-02 | 1985-05-21 | General Electric Company | Sweep through process for making polycrystalline compacts |
-
1985
- 1985-08-23 AU AU47724/85A patent/AU583299B1/en not_active Expired
- 1985-08-23 US US06/882,937 patent/US4874398A/en not_active Expired - Lifetime
- 1985-08-23 WO PCT/AU1985/000201 patent/WO1986001433A1/en not_active Ceased
- 1985-08-23 EP EP85904077A patent/EP0191067B1/en not_active Expired
- 1985-08-23 DE DE8585904077T patent/DE3585226D1/de not_active Expired - Lifetime
- 1985-08-23 JP JP60503702A patent/JP2607469B2/ja not_active Expired - Lifetime
-
1986
- 1986-02-10 IN IN93/CAL/86A patent/IN165203B/en unknown
- 1986-04-24 DK DK190686A patent/DK160324C/da not_active IP Right Cessation
-
1988
- 1988-09-27 US US07/250,259 patent/US4948388A/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4151686A (en) | 1978-01-09 | 1979-05-01 | General Electric Company | Silicon carbide and silicon bonded polycrystalline diamond body and method of making it |
Also Published As
| Publication number | Publication date |
|---|---|
| DK160324C (da) | 1991-07-29 |
| DK160324B (da) | 1991-02-25 |
| DK190686A (da) | 1986-06-24 |
| JPS62500012A (ja) | 1987-01-08 |
| AU583299B1 (en) | 1989-04-27 |
| EP0191067A1 (en) | 1986-08-20 |
| EP0191067A4 (en) | 1986-11-27 |
| US4948388A (en) | 1990-08-14 |
| IN165203B (Direct) | 1989-08-26 |
| EP0191067B1 (en) | 1992-01-15 |
| US4874398A (en) | 1989-10-17 |
| DE3585226D1 (de) | 1992-02-27 |
| DK190686D0 (da) | 1986-04-24 |
| WO1986001433A1 (en) | 1986-03-13 |
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