JP2606936B2 - Deposition film forming equipment - Google Patents

Description

The present invention relates to a deposited film forming apparatus for forming a film on a substrate,
In particular, the present invention relates to a deposited film forming apparatus for forming a film having a uniform and uniform film thickness used for an electronic device or the like.

[Prior Art] Conventionally, as a device for forming a deposited film of an electronic device or the like, from the viewpoint of a simple configuration or the like, a device by sputtering or a substrate portion for forming a deposited film (hereinafter referred to as a substrate and There is known a sputtering apparatus or the like which can apply a high-frequency bias voltage (or a DC bias voltage) to a holder including a holder for holding a substrate.

FIG. 3 shows an example of a conventional high-frequency bias application type device, which moves a substrate H provided in a vacuum vessel A and held by a carrier C in a predetermined direction (one-way motion, Alternatively, a high-frequency bias voltage is applied to the substrate portion H via a bias introduction mechanism B while the substrate T is being conveyed to the substrate portion H, and a film of the target T is formed on the substrate portion H.

Here, the high-frequency bias voltage is applied to only one substrate portion H, and the substrate portion H moves in the predetermined direction P and forms a film when facing the target T.

[Problem to be Solved by the Invention] However, in the above-described conventional example, since the high frequency bias voltage is applied to only one substrate portion H and the film is formed while the substrate portion H is being transported, the following problem occurs. There is.

First, when the substrate portion H is located on the end side of the target T and when it is located so as to face the target T, in other words, the substrate portion H is formed by the discharge portion (the deposition prevention plate C). The area ratio differs between the area facing the non-discharge portion (the portion where the deposition-preventing plate C is disposed) and the area facing the non-discharge portion (the portion where the deposition preventing plate C is disposed). For this reason, the load capacity of the bias introducing mechanism B differs depending on the position of the substrate portion H, and it is necessary to greatly change the input power amount of the high frequency bias.

Second, film formation by the above apparatus is performed for each substrate portion H, and is not suitable for mass production.

The present invention provides a deposition film forming apparatus suitable for mass production, in which it is not necessary to greatly change the load capacity of a bias power supply applied to the substrate when forming a film on a substrate portion to be transferred. The purpose is to:

Means for Solving the Problems In order to achieve the above object, the present invention provides a deposited film forming apparatus for forming a film by applying a bias voltage to a substrate portion arranged in a vacuum vessel and conveyed in a predetermined direction. A high-frequency bias introducing mechanism provided to face a continuously transported substrate portion to apply a bias voltage to the substrate portion; and a high-frequency bias introducing mechanism provided adjacent to the high-frequency bias introducing mechanism and the transported substrate. A high-frequency bias switching mechanism for applying a bias voltage to the substrate unit, wherein the substrate unit conveyed first is supplied with the high-frequency bias so that a bias is sequentially applied to a plurality of substrate units conveyed continuously. The high-frequency bias switching mechanism is provided upstream of the substrate unit in the transport direction so that a bias is applied from the high-frequency bias switching mechanism to a substrate unit to be subsequently transported when the unit is separated from the mechanism. There is a gist in a deposited film forming apparatus characterized by the following.

[Operation] According to the present invention, a bias voltage is continuously applied to at least two substrate portions, so that the amount of load fluctuation of the bias introducing mechanism is reduced. In addition, since a bias voltage is continuously applied to a plurality of substrate portions, no gap is formed between adjacent substrate portions. Therefore, the substrate portions are continuously or intermittently transported. Can membrane.

[Example] Hereinafter, an example in which an embodiment of the present invention is applied to a sputtering apparatus will be specifically described as an example.

1 and 2 are views schematically showing a typical example of the apparatus of the present invention. In the figure, 1 is a sputtering target, 2 is an adhesion preventing plate, 3 is a substrate portion, 4 is a carrier, 5 is a high frequency bias introducing mechanism, 6 is a vacuum vessel, 7
Is a high frequency bias switching mechanism, 8 is a shield plate, and 9 is a transport mechanism.

Accordingly, the carrier 4 and the substrate unit 3 arranged in the vacuum vessel 6 are transported by the transport mechanism 9 without forming a gap between the adjacent substrate units 3 (the arrow _Po indicates the transport direction). A high-frequency bias voltage is applied by the high-frequency bias introducing mechanism 5 to the substrate unit 3 transported to a predetermined position. The substrate holder to which the high frequency bias voltage is applied
The material of the target 1 is deposited at the opening of the deposition-preventing plate 2 and the deposited film is etched by the action of the high-frequency bias voltage.

The protection plate 2 is grounded to the vacuum vessel 6, and
The deposition-preventing plate 2 has a high-frequency shielding effect around the opening, and the substrate portion 3 is not etched. Since the substrate portion 3 located around the opening is separated from the high frequency bias introducing mechanism 5, the application of the high frequency bias voltage is released.

When the substrate unit 3 is separated from the high-frequency bias introducing mechanism 5, a high-frequency bias voltage is applied to the subsequently conveyed substrate unit 3 by the high-frequency bias switching mechanism 7.

By applying the high-frequency bias voltage to the plurality of substrate portions 3 in this manner, the substrate portion 3 has an area ratio between a discharge portion (opening of the deposition-preventing plate 2) and a non-discharge portion (opposing portion of the deposition-preventing plate 2). , The amount of change (load change) in the capacitance of the electrical system due to the transport of the substrate unit 3 is reduced. Also,
Since the high frequency bias switching mechanism 7 is provided so that the high frequency bias voltage can always be applied to the same number of substrate units 3, it is possible to continuously form a deposited film.

The other methods for depositing a film are the same as the conventional sputtering method.

Next, evaluation of a deposited film when the deposited film forming apparatus according to the present invention shown in FIGS. 1 and 2 and the conventional deposited film forming apparatus shown in FIG. 3 are used will be described.

(Deposition conditions) Deposition method: Bias magnetron sputtering Target: SiO ₂ pressure and introduced gas: 5 × 10 ^-1 pa, Ar Sputtering high frequency power: 2 kw Transfer speed: 6 mm / min Bias high frequency power: V _DC = 0 to- 200V substrate: Corning 7059 glass Target film thickness: 1 μm (Evaluation target) Film thickness distribution Etching rate (etching solution; NH ₄ F: HF = 10: 1, liquid temperature 25 ° C) The following Table 1 shows the above results. It is a comparison between the device according to the present invention and the case using the conventional device.

It can be understood from Table 1 that the continuous bias deposition apparatus according to the present invention has an extremely small thickness distribution and a uniform thickness, and has a small etching rate, which is an index of the film quality, as compared with the conventional apparatus. In addition, a uniform deposition film is obtained because the variation in the etching rate in the substrate is small.

The present invention is applicable not only to a sputtering apparatus but also to an apparatus for continuously transporting a substrate holder, for example, a deposited film forming apparatus such as a plasma CVD apparatus to obtain a uniform and uniform deposited film as described above. Can be.

[Effects of the Invention] As described above, according to the present invention, in a deposition film forming apparatus for forming a film by applying a bias voltage to a substrate portion arranged in a vacuum vessel and conveyed in a predetermined direction, A high-frequency bias introducing mechanism provided opposite to the substrate portion which is continuously transported to apply a bias voltage to the portion;
A high-frequency bias switching mechanism provided adjacent to the high-frequency bias introducing mechanism for applying a bias voltage to the substrate portion to be transported, wherein a bias is sequentially applied to a plurality of substrate portions transported continuously. As described above, when the substrate portion transferred earlier is separated from the high-frequency bias introduction mechanism,
By providing the high-frequency bias switching mechanism on the upstream side in the transport direction of the substrate section so that a bias is applied from the high-frequency bias switching mechanism to the substrate section subsequently transported, the substrate section is continuously transported and , A high-frequency bias can be applied, thereby improving productivity.

[Brief description of the drawings]

FIG. 1 is a plan view showing an embodiment of the present invention, FIG. 2 is a front view thereof, and FIG. 3 is a front view showing a conventional deposited film forming apparatus. DESCRIPTION OF SYMBOLS 1 ... Target, 2 ... Deposition plate, 3 ... Substrate part, 4 ... Carrier, 5 ... High frequency bias introduction mechanism, 6 ... Vacuum container, 7 ...
High frequency bias switching mechanism, 8: shield plate, 9: transport mechanism.

Claims (1)

(57) [Claims] An apparatus for forming a film by applying a bias voltage to a substrate portion disposed in a vacuum vessel and conveyed in a predetermined direction to form a film, wherein the bias voltage is continuously applied to the substrate portion. A high-frequency bias introducing mechanism provided to face the substrate portion to be conveyed; and a high-frequency bias switching mechanism provided adjacent to the high-frequency bias introducing mechanism for applying a bias voltage to the conveyed substrate portion. Having a plurality of substrate parts that are successively conveyed, so that a bias is sequentially applied to the plurality of substrate parts. A deposition film forming apparatus, wherein the high-frequency bias switching mechanism is provided on the upstream side in the transport direction of the substrate unit so that a bias is applied from the high-frequency bias switching mechanism.