JP2602442C - - Google Patents
Info
- Publication number
- JP2602442C JP2602442C JP2602442C JP 2602442 C JP2602442 C JP 2602442C JP 2602442 C JP2602442 C JP 2602442C
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- quartz
- bubble
- bubble content
- melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052904 quartz Inorganic materials 0.000 claims description 38
- 239000010453 quartz Substances 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 230000002093 peripheral Effects 0.000 claims description 22
- 238000002844 melting Methods 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 description 10
- 230000005712 crystallization Effects 0.000 description 10
- 238000009826 distribution Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 241000872198 Serjania polyphylla Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000875 corresponding Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
Family
ID=
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4948504B2 (ja) | シリコン単結晶引上げ方法 | |
| JP4994647B2 (ja) | 結晶化し易い石英ガラス部材とその用途 | |
| JP4233059B2 (ja) | シリコン単結晶引上げ用石英ガラスルツボ及びその製造方法 | |
| WO2004106247A1 (ja) | シリコン単結晶引上げ用石英ガラスルツボ | |
| JP4803784B2 (ja) | シリコン単結晶引上げ用石英ガラスルツボの製造方法 | |
| JP2923720B2 (ja) | シリコン単結晶引上げ用石英ルツボ | |
| JP4601437B2 (ja) | 内表面が半結晶化した石英ガラスルツボとその製造方法 | |
| JPH02180789A (ja) | Ｓｉ単結晶の製造方法 | |
| JP4726138B2 (ja) | 石英ガラスルツボ | |
| JPH0692276B2 (ja) | シリコン単結晶引上げ用石英ルツボ | |
| JP2602442B2 (ja) | シリコン単結晶引上げ用石英ルツボ | |
| TWI659933B (zh) | 單晶矽提拉用石英玻璃坩堝及其製造方法 | |
| JP2936392B2 (ja) | シリコン単結晶引上げ用石英ルツボ | |
| JPS59213697A (ja) | 単結晶半導体引上装置 | |
| JP6351534B2 (ja) | シリコン単結晶引き上げ用石英ガラスルツボ | |
| JPH0788269B2 (ja) | シリコン単結晶引上げ用ルツボ | |
| JPH0585879A (ja) | 単結晶引上装置 | |
| JP2602442C (de) | ||
| JPH1149597A (ja) | シリコン単結晶引き上げ用石英るつぼ | |
| JP5685894B2 (ja) | 石英ガラスルツボ及びその製造方法、並びにシリコン単結晶の製造方法 | |
| JP7280160B2 (ja) | シリカガラスルツボ | |
| JPH068237B2 (ja) | シリコン単結晶引上げ用石英ルツボ | |
| JP3026088B2 (ja) | シリコン単結晶引上げ用石英ルツボ | |
| JP2789804B2 (ja) | シリコン単結晶引上げ用石英ルツボとその製造方法 | |
| JP6681269B2 (ja) | 石英ガラスルツボ |