JP2600805B2 - Electron beam exposure apparatus and method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to an electron beam (EB) exposure apparatus and method capable of performing a batch shot using a line beam or the like, and particularly relates to a blanking array aperture, which has a structure that can be easily manufactured. The purpose of this method is to prevent the loss of beam components when a voltage is applied to the electrodes and to generate a complete pattern. The electrode has multiple pairs of electrodes on both sides of an electron passage opening formed in a conductive substrate. One electrode of the electrode pair is alternately arranged on both sides of the opening insulated from the substrate, and the other electrode has a blanking array aperture configured as a common electrode using the opening side surface of the substrate. An electron beam exposure apparatus or a blanking array, wherein a beam component passing through each electrode pair can be turned on / off by applying a blanking voltage to the pair. Using an electron beam exposure apparatus having a parr, beam components in the electrode pair to which no blanking voltage is applied are canceled when the blanking voltage is applied to an adjacent electrode pair by pulling the voltage to cancel the effect of chipping. Control is performed so that such a voltage is applied to the electrode pair.

[Industrial applications]

The present invention relates to an electron beam (EB) exposure apparatus and method capable of performing a batch shot using a line beam or the like, and more particularly, to a blanking array aperture for turning on and off an electron beam.

2. Description of the Related Art In recent years, in EB exposure used for manufacturing semiconductor integrated circuits and the like, formation of a submicron or less pattern is required.

In this case, in an exposure apparatus having a variable beam beam, a pattern must be formed by a small shot, and there is a disadvantage that the exposure time is too long. Therefore, in order to shorten the exposure time, use of a line beam in which a plurality of shots are combined has been considered, and various studies have been made in various places.

When a line beam is used, a blanking array aperture that separates shots (beam components) according to the pattern and turns them on and off is required.

[Conventional technology]

FIG. 4 is a schematic configuration diagram of an EB exposure apparatus having a blanking array aperture.

In the figure, a blanking array aperture 41 has a plurality of apertures (openings) 41A, 41B,..., And a blanking electrode for turning on / off a beam component (indicating a beam in each aperture) in each aperture. A pair is provided.

The electron beam emitted from the electron gun 42 passes through each of the apertures 41A, 41B,... Of the blanking array aperture 41, an electromagnetic lens (not shown), a main deflector (coil) 43, a sub-deflector (electrode) 44, etc. Is drawn on the wafer 46 placed on the stage 45 via the.

Magnetic disk 48, magnetic tape 49 controlled by CPU 47
.. Reach the bitmap generation circuit 52 via the interface 50, and according to the bitmap generated here, the blanking generation circuit groups 53A, 53B,. The beam components are turned on and off by controlling the electrode pairs provided in the first and second electrodes.

On the other hand, the sequence controller 54 controls the order of the bit map generation circuit 52, the blanking control circuit 55, the deflector control circuit 56, and the stage control circuit 57 based on the data from the interface 50.

The blanking control circuit 55 includes a blanking generation circuit group 53
A, 53B,..., A deflector control circuit 56 controls the beam deflection by the main deflector 43 and the sub deflector 44 via a D / A converter and amplifiers 58 and 59, respectively, and a stage control circuit 57 The position of the stage 45 is controlled by the step motor 60.

FIGS. 5 (1) and 5 (2) are a plan view and a sectional view of a conventional blanking array aperture.

This example uses the blanking array aperture 41 shown in FIG.
Instead of a plurality of apertures shown in FIG. 1, a large number of electrode pairs are arranged in a line in one elongated aperture.

In the figure, an opening 1A is provided in a conductive substrate 1, and in the opening, electrode pairs 2A, 3A; 2B, 3B;

The electrode pairs 2A, 3A; 2B, 3B;...
Are connected to the blanking generation circuit by wirings 6A, 7A; 6B, 7B;

[Problems to be solved by the invention]

As described above, the blanking array aperture divides a beam into elements (the above-described beam components) by arranging electrodes in an electron passage aperture.

Therefore, it is necessary to make the interval between the electrodes as small as possible, but it is difficult to control them.

On the other hand, the beam component in the ON state, to which no blanking voltage is applied, is disadvantageously pulled and lost when a voltage is applied to an adjacent electrode.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a blanking array aperture and a control method capable of generating a complete pattern by turning on / off each element (beam component) of a line beam.

[Means for solving the problem]

The above problems can be solved by (1) having a plurality of electrode pairs on both sides of an electron passage opening formed in a conductive substrate, one electrode of each electrode pair being insulated from the substrate and alternately disposed on both sides of the opening. The other electrode has a blanking array aperture configured as a common electrode using the side surface of the opening of the substrate, and a beam component passing through each electrode pair by applying a blanking voltage to each electrode pair. Using an electron beam exposure apparatus capable of turning on and off the light, or (2) an electron beam exposure apparatus having a blanking array aperture, and a beam component in the electrode pair to which no blanking voltage is applied is applied to an adjacent electrode pair. An electron beam exposure method that controls so that when a blanking voltage is applied, a voltage is applied to the electrode pair to cancel the effect of being pulled by the voltage and causing chipping. It is achieved by.

Of course, when the apparatus described in (1) is used and the method described in (2) is used, the effect is even greater.

[Action]

According to the present invention, a metal electrode insulated from one substrate of an electrode pair is alternately arranged on both sides of the opening, and the other electrode is a common electrode using the side surface of the opening of the conductive substrate, so that the wiring interval and the insulation from the substrate can be obtained. Metal electrode spacing can be widened, and when a blanking voltage is applied to the electrode of the next element,
By applying an appropriate potential to the electrode on the opposite side of the opening and pulling back the beam to be chipped, a complete pattern can be formed without chipping of the beam component.

〔Example〕

1 (1) to 1 (3) are plan views of a blanking array aperture according to an embodiment of the present invention.

FIG. 1A shows an example in which an electrode insulated from a substrate and an adjacent substrate electrode are separated by an insulating layer.

In FIG. 1A, an opening 11A is provided in a conductive substrate 11, and one of electrodes 12A, 12B,... Is provided on both sides of the opening via insulating layers 14A, 14B,. They are arranged alternately.

, Etc. are connected to a blanking generation circuit via wires 16A, 16B,... Formed on the substrate 11 via insulating layers 14A, 14B,.

The other electrode uses the substrate itself exposed on the side surface of the opening.

FIG. 1 (2) shows an example in which an electrode insulated from the substrate and an adjacent substrate electrode are separated by vacuum.

Fig. 1 (3) shows the case where each element has an individual opening.
A plurality of openings 11A, 11B,... Are provided in the conductive substrate 11, and one electrode 12A, 12B,. Etc. are alternately arranged.

, Etc. are connected to a blanking generation circuit via wires 16A, 16B,... Formed on the substrate 11 via insulating layers 14A, 14B,.

The other electrode uses the substrate itself exposed on the side surface of the opening.

FIGS. 2 (1) and 2 (2) are plan views for explaining a method of preventing a beam from being chipped by using the blanking array aperture of the present invention.

FIG. 2 (1) shows that when a beam component 17B is present with no blanking voltage applied to the electrode 12B, the adjacent electrode 1B
When a blanking voltage is applied to 2A, the beam component 17B initially indicated by the dotted line is pulled toward the electrode 12A and chipped as indicated by the solid line.

Therefore, as shown in FIG. 2 (2), the beam is pulled back by applying an appropriate potential + α to the electrode 12B.

Further, when a blanking voltage is applied to both of the adjacent electrodes 12A and 12B, both electrodes should not be applied with + α.

As described above, when the blanking voltage is applied to the adjacent voltage, the voltage of the electrode is controlled so that the beam component is not apparently affected by the adjacent electrode, thereby preventing the beam from being chipped. Can be.

FIGS. 3 (1) to (11) are a plan view and a cross-sectional view for explaining the outline of the manufacturing process of the blanking array aperture of the embodiment.

 This example shows the embodiment of FIG.

In the plan view of FIG. 3 (1) and the sectional view taken along the line AA of FIG. 3 (2), concave portions a, b, c,.
Etc. are formed.

In the plan view of FIG. 3 (3) and the cross-sectional view taken along the line AA of FIG. 4 (4), the insulating layer 14 is formed on the substrate so as to cover the recesses a, b, c,.

In the plan view of FIG. 3 (5) and the cross-sectional view taken along the line AA of FIG. 6 (6), the electrodes 12A, 12B,. Embed etc.

In the plan view of FIG. 3 (7) and the sectional view taken along the line AA of FIG. 8 (8), wirings 16A, 16B are connected to the electrodes 12A, 12B,. ,... Are formed.

In the sectional view of FIG. 3 (9), wirings 16A, 16B,.
The insulating layer 18 and the metal layer 19 are sequentially formed on the substrate 11 so as to cover them. The metal layer 19 is for preventing charge-up during exposure.

In the cross-sectional view of FIG. 3 (10), a groove 11A 'for an electron passage hole is dug at a position indicated by an imaginary line in the plan view of FIG. 3 (7).

In the sectional view of FIG. 3 (11), a groove is dug from the back surface of the substrate 11, and an opening 11A for passing electrons is formed through the bottom of the groove 11A 'for an electron passing hole.

The above is the outline of the manufacturing process of the blanking array aperture.

If a highly conductive Si substrate is used as the substrate 11,
Using an Si oxide film, using anisotropic dry etching for forming recesses and trenches, etc.
Technology can be used as is.

〔The invention's effect〕

As described above, according to the present invention, each electrode has a structure that can be easily manufactured, and complete switching is performed by turning on / off each element of the line beam that prevents the beam component from being chipped when a voltage is applied to an adjacent electrode. A blanking array aperture capable of generating a simple pattern can be obtained.

[Brief description of the drawings]

FIGS. 1 (1) to 1 (3) are plan views of a blanking array aperture according to an embodiment of the present invention, and FIGS. 2 (1) and 2 (2) are diagrams of beams using the blanking array aperture of the present invention. FIGS. 3 (1) to (11) are a plan view and a cross-sectional view schematically illustrating a manufacturing process of a blanking array aperture according to the embodiment. FIGS. FIGS. 5 (1) and (2) are a plan view and a cross-sectional view of a conventional blanking array aperture having an array aperture. In the figure, 11 is a conductive substrate, 11A is an opening for an electron passage hole, 12A, 12B, etc. are electrodes, 14A, 14B, etc. are insulating layers, 16A, 16B, etc. are The wiring, 17B, is the beam component.

Claims (3)

(57) [Claims] A plurality of electrode pairs provided on both sides of an electron passage opening formed in a conductive substrate; one electrode of each electrode pair is alternately arranged on both sides of the opening insulated from the substrate; The other electrode has a blanking array aperture configured as a common electrode using the side surface of the opening of the substrate, and by applying a blanking voltage to each electrode pair, a beam component passing through each electrode pair can be turned on and off. An electron beam exposure apparatus characterized in that: 2. An electron beam exposure apparatus having a blanking array aperture, wherein a beam component in a pair of electrodes to which a blanking voltage is not applied is converted into a voltage when a blanking voltage is applied to an adjacent pair of electrodes. An electron beam exposure method, wherein control is performed such that a voltage that cancels out the effect of pulling and chipping is applied to the electrode pair. 3. An electron beam exposure method using the electron beam exposure apparatus according to claim 1 and performing the control according to claim 2.