JP2600200B2 - Thin film active element substrate - Google Patents

Thin film active element substrate

Info

Publication number
JP2600200B2
JP2600200B2 JP25639887A JP25639887A JP2600200B2 JP 2600200 B2 JP2600200 B2 JP 2600200B2 JP 25639887 A JP25639887 A JP 25639887A JP 25639887 A JP25639887 A JP 25639887A JP 2600200 B2 JP2600200 B2 JP 2600200B2
Authority
JP
Japan
Prior art keywords
active element
electrode
film active
thin
liquid crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP25639887A
Other languages
Japanese (ja)
Other versions
JPH0199030A (en
Inventor
聡 高藤
信彦 今城
正記 結城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP25639887A priority Critical patent/JP2600200B2/en
Publication of JPH0199030A publication Critical patent/JPH0199030A/en
Application granted granted Critical
Publication of JP2600200B2 publication Critical patent/JP2600200B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は多数の薄膜能動素子を行列状電極の交差点近
傍に配置した薄膜能動素子基板に関するものである。
Description: TECHNICAL FIELD The present invention relates to a thin-film active element substrate in which a large number of thin-film active elements are arranged near intersections of matrix electrodes.

(従来の技術) 最近OA機器粉末やボータブルテレビ等への要求から平
面ディスプレイの開発が盛んに行なわれている。その中
でも大容量グラフィック表示に対応するために行列状に
電極を配した情報表示装置において、前記電極交差点近
傍に能動素子を配して駆動を行なうアクティブ・マトリ
クス方式が研究されている。第2図の一部に薄膜能動素
子として薄膜トランジスタ(以下TFTという。)を用い
た液晶パネルディスプレイの等価回路図を示す。21が液
晶層であり、22が前記液晶層を駆動するためのスイッチ
ング用のTFTである。23は液晶を駆動するために必要な
電圧を印加するためのデータ線であり、24はTFT22のゲ
ートを制御するための選択信号線である。VDSはTFT22の
オン状態のドレイン−ソース間電圧であり、VLCは液晶
層21の両端の電圧である。従来より、電極交差点近傍に
能動素子を組みこんで駆動を行なうアクティブ・マトリ
クス方式は能動素子を組みこまない駆動方式である単純
マトリクス方式に比べ、応答性、階調、コントラスト
比、視野角の広さ等において格段に良い。
(Prior art) Recently, flat displays have been actively developed due to demands for powders of OA equipment and portable televisions. Among them, in an information display device in which electrodes are arranged in a matrix in order to correspond to a large-capacity graphic display, an active matrix system in which an active element is arranged near the electrode intersection and driven is studied. FIG. 2 shows an equivalent circuit diagram of a liquid crystal panel display using a thin film transistor (hereinafter referred to as TFT) as a thin film active element in a part of FIG. Reference numeral 21 denotes a liquid crystal layer, and reference numeral 22 denotes a switching TFT for driving the liquid crystal layer. Reference numeral 23 denotes a data line for applying a voltage required to drive the liquid crystal, and reference numeral 24 denotes a selection signal line for controlling the gate of the TFT 22. V DS is the drain of the ON state of the TFT 22 - a source voltage, V LC is a voltage across the liquid crystal layer 21. Conventionally, the active matrix method, in which an active element is incorporated near the electrode intersection, and driven, has a wider response, gradation, contrast ratio, and viewing angle than the simple matrix method, which is a driving method in which no active element is incorporated. It is much better in such as.

(発明の解決しようとする問題点) 一方第2図に示すようにTFT22は液晶層21と直列に接
続されており、TFT22のオン状態のドレイン−ソース間
のインピーダンスが高いと、液晶層へ印加したいデータ
線の駆動電圧がTFT22の部分で電圧降下を起こす等の原
因により液晶層にかかる実効的な電圧VLCはVDSだけ目減
りしてしまう。その結果TFT22をオンしても液晶を駆動
するに十分な電圧がかからなくなり、応答性、階調、コ
ントラストといった情報表示装置としての品位が低下し
てしまう恐れがあり、液晶の光学特性を正確に知ること
ができない。また、液晶層21にかける電圧を大きくしよ
うとしてもデータ線の駆動電圧を変更することは駆動IC
の規格等のため極めてむずかしい。
(Problems to be Solved by the Invention) On the other hand, as shown in FIG. 2, the TFT 22 is connected in series with the liquid crystal layer 21, and when the impedance between the drain and the source in the ON state of the TFT 22 is high, the TFT 22 is applied to the liquid crystal layer. effective voltage V LC across the liquid crystal layer due to causes such as the driving voltage of the data you wish line causes a voltage drop at the portion of the TFT22 ends up eroded only V DS. As a result, even if the TFT 22 is turned on, a voltage sufficient to drive the liquid crystal is not applied, and the quality as an information display device such as responsiveness, gradation, and contrast may be deteriorated. Can not know. Also, changing the drive voltage of the data line is not possible with a drive IC even if the voltage applied to the liquid crystal layer 21 is to be increased.
It is extremely difficult because of the standards.

[問題点を解決するための手段] 本発明は前述の問題点を解決すべくなされたものであ
り、絶縁基板上に行列状に画素電極を配し、該画素電極
の交差点近傍に薄膜能動素子を設けてなる薄膜能動素子
基板において、薄膜能動素子を設けていない検査用の画
素電極を上記絶縁基板上に設け、かかる検査用の画素電
極に結線するように電極線を配してなることを特徴とす
る薄膜能動素子基板を提供する。また、前記検査用の画
素電極が、前記薄膜能動素子基板の表示画面の視認可能
な範囲ではあるが、製品としてはその場所を使用しない
領域に設置され、かつ、前記薄膜能動素子基板と液晶層
を挟んで対向する絶縁基板上の薄膜能動素子を設けてい
ない電極と該検査用の画素電極との間で、電圧を印加す
ることが可能であることを特徴とする上記薄膜能動素子
基板を提供する。
[Means for Solving the Problems] The present invention has been made to solve the above-mentioned problems, and has a structure in which pixel electrodes are arranged in a matrix on an insulating substrate, and a thin film active element is provided near an intersection of the pixel electrodes. In the thin film active element substrate provided with, a pixel electrode for inspection without a thin film active element is provided on the insulating substrate, and an electrode line is arranged so as to be connected to the pixel electrode for inspection. A thin film active element substrate is provided. In addition, the inspection pixel electrode is provided in a region where the product pixel is in a viewable range of the display screen of the thin film active element substrate but is not used as a product, and the thin film active element substrate and the liquid crystal layer A thin film active element substrate provided with a thin film active element substrate, wherein a voltage can be applied between an electrode on which no thin film active element is provided and an inspection pixel electrode on an insulating substrate opposed to the thin film active element. I do.

以下、本発明を図面によって詳細に説明する。第1図
に本発明の基本構成の断面図を示す。第1図において10
は絶縁基板、11は画素電極、12は本発明の電極線、13は
液晶層を示す。絶縁基板10は画素電極11等をこの上に形
成し、液晶層13を挟み込む2枚の板状体の内の1枚であ
り、ガラス板、合成樹脂板等が使用できる。画素電極11
は液晶層13に電圧を印加するためのものであり、ITOや
その他の金属又は金属化合物が使用される。かかる画素
電極の材質はフォトリソグラフィーの関係上、TFTを有
する他の画素電極の材質と異なってもよい。電極線12は
本発明のポイントであり、当該電極線12を介して液晶層
13に印加する電圧を、画素電極11に直接印加する機能を
果たす。電極線12は1層構造でもよいが、断線等の欠陥
防止のため2層構造にすることが望ましい。
Hereinafter, the present invention will be described in detail with reference to the drawings. FIG. 1 shows a sectional view of the basic structure of the present invention. In FIG. 1, 10
Denotes an insulating substrate, 11 denotes a pixel electrode, 12 denotes an electrode line of the present invention, and 13 denotes a liquid crystal layer. The insulating substrate 10 is one of two plate-like bodies on which the pixel electrode 11 and the like are formed and the liquid crystal layer 13 is interposed therebetween, and a glass plate, a synthetic resin plate, or the like can be used. Pixel electrode 11
Is for applying a voltage to the liquid crystal layer 13, and ITO or another metal or metal compound is used. The material of such a pixel electrode may be different from the material of another pixel electrode having a TFT due to photolithography. The electrode wire 12 is a point of the present invention, and the liquid crystal layer is connected through the electrode wire 12.
The function of directly applying the voltage applied to the pixel electrode 11 to the pixel electrode 11 is achieved. The electrode wire 12 may have a single-layer structure, but preferably has a two-layer structure to prevent defects such as disconnection.

該電極線12の材質は低融点のものとしてはCu,Ag,Au,A
l等の金属が使用でき価格等の点を考慮するとAlが望ま
しく、高融点のものとしてはCr,Mo,Ti,W等が一般的に使
用でき、価格等の点を考慮するとCr,Tiが望ましい。前
記したように電極線12を2層構造にするときは1層目を
侵蝕されにくくするように1層目の材質は2層目より高
融点であることが望ましく、前記した金属よりこのよう
になるように選択すればよい。又2層構造にする場合と
して、製造工程削減の方法として次のような方法があ
る。画素電極11を絶縁基板上にパターニングする同一の
フォトリソグラフィー工程中に同時に、電極線12の1層
目をパターニングし(この場合当然に電極線12の1層目
と画素電極11の材質は同一となる。)、その上に2層目
を前記したフォトリソグラフィーの工程とは別のフォト
リソグラフィーの工程でパターニングする。このように
することによって製造工程を少なくでき、時間の短縮化
とコストダウンに寄与できる。この場合、1層目の材質
は2層目の形成中侵蝕されにくいように2層目より高融
点であることが望ましく、このようになるように前記し
た金属より選択すればよい。
The material of the electrode wire 12 is Cu, Ag, Au, A
Considering the price, etc., metals such as l can be used, and Al is desirable.Cr, Mo, Ti, W, etc. can be generally used as those having a high melting point. desirable. When the electrode wire 12 has a two-layer structure as described above, it is preferable that the material of the first layer has a higher melting point than that of the second layer so that the first layer is hardly corroded. What is necessary is just to select. In the case of a two-layer structure, the following method can be used to reduce the number of manufacturing steps. During the same photolithography step of patterning the pixel electrode 11 on the insulating substrate, the first layer of the electrode line 12 is simultaneously patterned (in this case, naturally, the material of the first layer of the electrode line 12 is the same as that of the pixel electrode 11). ), And the second layer is patterned thereon by a photolithography process different from the above-described photolithography process. By doing so, the number of manufacturing steps can be reduced, which can contribute to a reduction in time and cost. In this case, the material of the first layer desirably has a higher melting point than that of the second layer so as to be less likely to be eroded during the formation of the second layer, and may be selected from the above-mentioned metals so as to be like this.

本発明の構造は、以上述べたように電極線12が駆動す
るTFTがない検査用の画素電極11に接触しており、かか
る電極12を介して直接液晶層13に電圧を印加できるが、
このような構造を有する検査用の画素電極11も電極線12
の組み合わせは通常数千〜数十万個のTFTを有するTFT基
板の中に1個以上必要に応じて形成すればよく、形成す
る領域は、製造として使用する以外の領域に当該検査用
の画素電極11と電極線12を、形成するのが通常であり、
この場合は 1)最終製品として完成後、表示画面の枠等に隠れて視
認不可能。
As described above, the structure of the present invention is in contact with the inspection pixel electrode 11 having no TFT driven by the electrode line 12, and a voltage can be directly applied to the liquid crystal layer 13 via the electrode 12.
The inspection pixel electrode 11 having such a structure is also connected to the electrode line 12.
Usually, one or more TFTs having thousands to hundreds of thousands of TFTs may be formed as needed, and a region to be formed is formed in a region other than a region used for manufacturing. It is normal to form the electrode 11 and the electrode wire 12,
In this case: 1) After completion as the final product, it is hidden behind the frame of the display screen and cannot be seen.

2)表示画面の最終製品として視認可能な範囲ではある
が、実際に製品としてはその場所を使用しない。(製品
として完成後は当該部分が点灯しないように処置してお
けばよい。) 等の場合が考えられ、また形成する領域は当該薄膜能動
素子基板以外の素子やスイッチ等によってオンオフされ
る最終製品として使用され、視認可能な場所(例えば数
字の小数点)であってもよい。
2) Although it is within the range that can be visually recognized as the final product on the display screen, the location is not actually used as the product. (After the product is completed, it is only necessary to take measures so that the part does not turn on.) There is also a possibility that the area to be formed is turned on and off by an element other than the thin film active element substrate, a switch, or the like. And may be a visible location (for example, a decimal point of a number).

又電極線12はデータ線23に接続してもよいし、絶縁基
板10の端部(できれば当該検査用の画素電極11に一番近
い端部。)まで引き出し、そこに電極(以下、光学検査
用端子という時もある。)を形成し、かかる電極に結線
してその光学検査用端子に電圧を印加し点灯させてもよ
い。
The electrode line 12 may be connected to the data line 23 or may be pulled out to the end of the insulating substrate 10 (preferably the end closest to the pixel electrode 11 for inspection), and an electrode (hereinafter referred to as an optical inspection) there. May be formed, connected to such an electrode, and a voltage is applied to the optical inspection terminal to light it.

尚第2図は本発明を一部に含んだTFT基板の一部の等
価回路を示す。
FIG. 2 shows an equivalent circuit of a part of a TFT substrate partially including the present invention.

第2図において、25は前記した電極線12に接続された
絶縁基板10の光学検査用端子、26は電極12に接続されて
いる液晶層である。
In FIG. 2, reference numeral 25 denotes an optical inspection terminal of the insulating substrate 10 connected to the above-mentioned electrode line 12, and reference numeral 26 denotes a liquid crystal layer connected to the electrode 12.

[作用] 本発明において、光学検査用端子に電圧を印加すると
検査用の画素電極に直接電圧が印加され、TFTを介して
電圧を画素電極に印加する時にTFTによってロスする電
圧降下がないので駆動される液晶等の光学特性を正確に
知ることができる。
[Operation] In the present invention, when a voltage is applied to the terminal for optical inspection, a voltage is directly applied to the pixel electrode for inspection, and when a voltage is applied to the pixel electrode via the TFT, there is no voltage drop that is lost by the TFT, so driving is performed. The optical characteristics of the liquid crystal and the like to be obtained can be known accurately.

[実施例] 本発明による光学検査用端子と逆スタガー構造のTFT
を有するTFT基板を作成したので、以下にその製作につ
いて説明する。
[Example] Optical inspection terminal according to the present invention and an inverted stagger structure TFT
Since the TFT substrate having the above structure was prepared, the fabrication thereof will be described below.

第3図の断面図に示すように、絶縁基板10上に画素電
極51としてITOのような透明導電膜を約500Å積層した。
続いて、Crを用いてゲート電極52を約500Å積層してパ
ターニングした。画素電極51とゲート電極52の上からSi
ONを透明絶縁膜53として約2000Å、その上に半導体層55
としてa−Siを約1000Å積層し、パターニングした。さ
らにAlを用いてソース電極56、ドレイン電極57をそれぞ
れ3000Å積層しパターニングした。かかる両電極ともa
−Siとの接触部においてn+a−Si層を介している。
As shown in the sectional view of FIG. 3, a transparent conductive film such as ITO was laminated on the insulating substrate 10 as the pixel electrode 51 by about 500 mm.
Subsequently, the gate electrode 52 was laminated using Cr by about 500 Å and patterned. Si from above the pixel electrode 51 and the gate electrode 52
ON is about 2000 mm as the transparent insulating film 53, and the semiconductor layer 55
A-Si was laminated at about 1000 ° and patterned. Further, a source electrode 56 and a drain electrode 57 were each laminated by 3000 Å using Al and patterned. Both such electrodes a
-N + a-Si layer at the contact portion with -Si.

次に第1図に示された本発明の光学検査用端子を前記
TFTを有する絶縁基板10の上にITOを用いて検査用の画素
電極11を形成した(約500Å)。その上にCrを用いて電
極線12をパターニングした(約500Å)。
Next, the optical inspection terminal of the present invention shown in FIG.
A pixel electrode 11 for inspection was formed on an insulating substrate 10 having a TFT by using ITO (about 500 °). The electrode wire 12 was patterned thereon using Cr (about 500 °).

以上により作成された基板で液晶TFT基板を作成し電
極線12によって直接電圧を検査用の画素電極11に印加し
た。この結果、該1枚の液晶TFT基板内でもTFTを介して
電圧を印加した液晶と比較して直接電極線12を介して電
圧を印加した液晶のほうがいくらか視野角の広さ等が優
れていた。
A liquid crystal TFT substrate was prepared from the substrate prepared as described above, and a voltage was directly applied to the pixel electrode 11 for inspection by the electrode wire 12. As a result, even in the single liquid crystal TFT substrate, the liquid crystal to which the voltage was directly applied through the electrode line 12 was somewhat superior in the wide viewing angle and the like, as compared with the liquid crystal to which the voltage was applied through the TFT. .

[発明の効果] 本発明は光学検査用端子に電圧を印加し、その電圧が
検査用の画素電極に直接印加されるので画素電極によっ
て駆動される液晶等の表示素子の光学特性を直接知るこ
とができ、これによってそれぞれのTFT基板のTFT及び液
晶等のロック別の特性傾向を知ることによって製造プロ
セスの調整をし均一な製品の製造に役立てることができ
る。
[Effects of the Invention] The present invention applies a voltage to an optical inspection terminal and directly applies the voltage to an inspection pixel electrode, so that it is possible to directly know the optical characteristics of a display element such as a liquid crystal driven by the pixel electrode. Thus, by knowing the characteristic tendency of each TFT substrate for each lock such as TFT and liquid crystal, it is possible to adjust the manufacturing process and use it to manufacture a uniform product.

【図面の簡単な説明】[Brief description of the drawings]

第1図:本発明の基本構成の断面図 第2図:本発明を一部に含んだTFT基板の一部の等価回
路図 第3図:逆スタガー構造のTFTの断面図 10:絶縁基板 11:画素電極 12:電極線 21,26:液晶 22:TFT 23:データ線 24:選択信号線 25:光学検査用端子
FIG. 1: Cross-sectional view of the basic structure of the present invention FIG. 2: Partial equivalent circuit diagram of a TFT substrate partially including the present invention FIG. 3: Cross-sectional view of an inverted staggered TFT 10: Insulating substrate 11 : Pixel electrode 12: Electrode line 21, 26: Liquid crystal 22: TFT 23: Data line 24: Select signal line 25: Optical inspection terminal

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】絶縁基板上に行列状に画素電極を配し、該
画素電極の交差点近傍に薄膜能動素子を設けてなる薄膜
能動素子基板において、薄膜能動素子を設けていない検
査用の画像電極を上記絶縁基板上に設け、かかる検査用
の画像電極に結線するように電極線を配してなることを
特徴とする薄膜能動素子基板。
An image electrode for inspection without a thin-film active element provided on a thin-film active element substrate having pixel electrodes arranged in a matrix on an insulating substrate and having a thin-film active element provided near an intersection of the pixel electrodes. Is provided on the insulating substrate, and an electrode wire is arranged so as to be connected to the image electrode for inspection.
【請求項2】前記検査用の画素電極が、前記薄膜能動素
子基板の表示画面の視認可能な範囲ではあるが、製品と
してはその場所を使用しない領域に設置され、かつ、前
記薄膜能動素子基板と液晶層を挟んで対向する絶縁基板
上の薄膜能動素子を設けていない電極と該検査用の画素
電極との間で、電圧を印加することが可能であることを
特徴とする第1項記載の薄膜能動素子基板。
2. The thin-film active element substrate according to claim 1, wherein the inspection pixel electrode is located in an area where the product is not used, although the area is within a viewable range of the display screen of the thin-film active element substrate. 2. A voltage can be applied between an electrode on which no thin-film active element is provided on an insulating substrate facing the liquid crystal layer and a pixel electrode for inspection. Thin film active element substrate.
【請求項3】前記電極線が前記絶縁基板の端部まで延長
され、かかる端部に配された光学検査用端子に結線され
ていることを特徴とする第1項または第2項記載の薄膜
能動素子基板。
3. The thin film according to claim 1, wherein the electrode wire extends to an end of the insulating substrate and is connected to an optical inspection terminal disposed at the end. Active element substrate.
JP25639887A 1987-10-13 1987-10-13 Thin film active element substrate Expired - Lifetime JP2600200B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25639887A JP2600200B2 (en) 1987-10-13 1987-10-13 Thin film active element substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25639887A JP2600200B2 (en) 1987-10-13 1987-10-13 Thin film active element substrate

Publications (2)

Publication Number Publication Date
JPH0199030A JPH0199030A (en) 1989-04-17
JP2600200B2 true JP2600200B2 (en) 1997-04-16

Family

ID=17292122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25639887A Expired - Lifetime JP2600200B2 (en) 1987-10-13 1987-10-13 Thin film active element substrate

Country Status (1)

Country Link
JP (1) JP2600200B2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5622474A (en) * 1979-07-31 1981-03-03 Sharp Kk Liquid crystal display unit

Also Published As

Publication number Publication date
JPH0199030A (en) 1989-04-17

Similar Documents

Publication Publication Date Title
EP0842455B1 (en) Improved tft, method of making and matrix displays incorporating the tft
US6172733B1 (en) Liquid crystal display including conductive layer passing through multiple layers and method of manufacturing same
US6894734B1 (en) Liquid-crystal display device and method for production thereof
US6613650B1 (en) Active matrix ESD protection and testing scheme
JPH0814669B2 (en) Matrix type display device
JP2001051303A (en) Liquid crystal display device and its production
WO1997005651A1 (en) Active matrix esd protection and testing scheme
JPH03163529A (en) Active matrix display device
EP1008177B1 (en) Improved active matrix esd protection and testing scheme
KR100685916B1 (en) Liquid crystal display panel
JP2002116712A (en) Display device and its manufacturing method
KR20060128271A (en) A substrate for lcd and method of fabrication thereof
JP2800958B2 (en) Active matrix substrate
JP2600200B2 (en) Thin film active element substrate
US5270845A (en) Liquid crystal display unit manufacturing method including forming one of two gate line layers of display electrode material
JPH08271930A (en) Production of thin-film transistor
KR100487433B1 (en) Array Substrate in Liquid Crystal Display Device
KR101212156B1 (en) Liquid crystal dispaly apparatus of line on glass type and fabricating method thereof
JP2690404B2 (en) Active matrix substrate
JPH04283725A (en) Thin film transistor matrix and its wire break repairing method
JP2947299B2 (en) Matrix display device
JPH0750278B2 (en) Liquid crystal display
JP2968252B2 (en) Liquid crystal display
JPH0887031A (en) Liquid crystal display
JPH01109327A (en) Display device