JP2593123Y2 - Inverter control device - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a large capacity MOS-FET, thyristor, and IGBT which uses DC power from a battery.
The present invention relates to a conductor connection of an inverter control device that controls an induction motor by converting it into AC power by a semiconductor power element such as a semiconductor power device.

[0002]

2. Description of the Related Art FIG. 3 shows a generally used inverter circuit, which is a semiconductor power element group 14 for converting DC power into AC power, a snubber circuit 15 for absorbing surge voltage, a semiconductor power element circuit 16 for regeneration, DC smoothing capacitor 17
It is composed of In a relatively large-capacity inverter device, it is common to connect the electric circuits with conductors. However, if the semiconductor power element group 14 requires high-speed switching in a connection structure in which the semiconductor power elements 14 are simply connected by conductors, the surge voltage increases due to the inductance flowing through the circuit when switching is turned off, and many surge voltage absorbing snubber circuits are installed. Or the capacity of the semiconductor power element cannot be used effectively.

[0003]

FIG. 4 shows a conventional connection structure for the purpose of reducing the wiring inductance as much as possible. Semiconductor power devices 18, 18a, 18
b and regeneration semiconductor power element 19 and semiconductor power element 2
0, 20a, 20b and the diode module element 21 are connected by the relay positive conductor 22 and the relay negative conductor 23, respectively, and the semiconductor power elements 18, 18a, 18b, the emitter (E) of the regeneration semiconductor power element 19, and the semiconductor power element The collectors (C) 20, 20a, 20b and the cathode (K) of the diode module element 21 are connected by relay conductors 24, 24a, 24b, 24c, respectively. Further, the snubber circuits 25, 25a, 25b for absorbing the surge voltage are installed beside the semiconductor power elements 18, 18a, 18b, and the collectors (C) of the semiconductor power elements 18, 18a, 18b and the semiconductor power elements 20 are connected by thick wires. , 20a, and 20b, respectively. Also, the wires from the positive and negative terminals of the DC smoothing capacitors 26, 26a, 26b, and 26c to the relay positive conductor 22 and the relay negative conductor 23 are twisted with each other.

However, as shown in FIG. 4, conductors for connecting and checking control signals from the terminals of the base (B) and emitter (E) of the semiconductor power elements 18, 18a and 18b and the regenerative semiconductor power element 19 are used. 24, 24a, 24b, 24
c has a large surface area, the surge absorbing snubber circuits 25, 25a, 25b are too long, and the wiring from the DC smoothing capacitors 26, 26a, 26b, 26c is long. Has been sought.

[0005] The present invention is based on the above-mentioned problems, and reduces the inductance by the wiring structure and minimizes the surge voltage to effectively utilize the rated voltage of the semiconductor power element, thereby increasing the output voltage and absorbing the surge voltage. The purpose is to omit and minimize the snubber circuit.

[0006]

SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a semiconductor power device for converting DC power of a battery into AC power and controlling an induction motor to operate as a motor and a generator. A regenerative semiconductor power element for controlling a current flowing to a discharge resistor when the battery is fully charged, a diode connected in a forward direction from the positive electrode side of the battery, a semiconductor power element for charge control of the battery, and a DC circuit In the inverter control device including a DC smoothing capacitor connected between output terminals of the DC power supply and a surge absorbing capacitor connected between the DC circuits, the semiconductor power element group, the diode group, and the capacitor group are connected to a plate-shaped conductor so that inductance is reduced. Is to be reduced.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the embodiment shown in FIG. 1 and the circuit diagram of the embodiment shown in FIG.

A semiconductor power element 1, 1a, 1b, 2, 2a, 2b for controlling the DC power of the battery to an AC power, and a regenerative semiconductor power element 3 for controlling a current flowing through a discharge resistor when the battery is fully charged. The diode element 4 connected to the regenerative semiconductor power element 3, the diode module element 5 connected in the forward direction from the positive electrode side of the battery, the charge control semiconductor power element 3a of the battery, and the charge control semiconductor power element 3a are connected to the battery. In the inverter control device including the diode module element 4a and the DC smoothing capacitors 6, 6a, 6b, 6c and the surge voltage absorbing capacitors 7, 7a, 7b connected between the output terminals of the DC circuit, the semiconductor power elements 1, 1a, 1b The main electrodes of the collector (C) and the emitter (E) are the semiconductor power element 1;
1a, 1b, the complementary semiconductor power devices 2, 2a, 2b are replaced by semiconductor power devices 1, 1a, 1b.
b, and the emitters (E) of the semiconductor power devices 2, 2a, 2b are arranged so as to face each other, and the opposing collectors (C) and the emitters (E) are brought as close as possible to each other, so that the relay conductors 8, 8a, 8b and output electrode conductors 9, 9a, 9
Pull out with b. Similarly, the semiconductor power elements 3, 3a for regenerative and battery charging and the diode module elements 4a, 5 are also arranged so as to face each other, and the relay conductor 1
Connect at 0,11.

The semiconductor power elements 1, 1a, 1b, the regenerative semiconductor power element 3, and the charge control semiconductor power element 3a
Of the semiconductor power elements 2, 2a, 2b and the anode (A) of the diode module element 4a having the same shape as all the semiconductor power elements. Connected by negative electrode conductor 13. The relay positive electrode conductor 12 and the relay negative electrode conductor 1
3, a capacitor for directly absorbing surge voltage 7, 7a, 7
Connect and fix with the electrode mounting feet b.

The DC smoothing capacitors 6, 6a, 6
The positive electrode terminals b and 6c and the relay positive electrode conductor 12 are connected by the relay positive electrode conductor 12a, and the negative electrode terminal of the smoothing capacitor and the relay negative electrode conductor 13 are connected by the relay negative electrode conductor 13a. The relay positive electrode conductor 12a and the relay negative electrode conductor 13a are arranged close to each other.

Although the output electrode conductors 9, 9a and 9b in FIG. 1 are lower than the relay conductors 8, 8a and 8b, the conductors raised from the relay conductors 8, 8a and 8b and the L-shape shifted to one side. The effect is almost the same even if the connection is made by the conductors of FIG. Also,
Control of battery charge control semiconductor power element 3a
About the same as the control for the conventional battery charge
Therefore, the description is omitted here.

[0012]

As described above, the surface area of the relay positive electrode conductor and the relay negative electrode conductor is increased and the thickness is increased, and the surface area of the relay conductor is increased and the length is shortened and the thickness is increased. By reducing the inductance of each conductor by making the connection of the relay negative electrode conductor close to each other and canceling out the magnetic flux generated by the current flowing through the conductor, the surge voltage at the time of switching off can be reduced. Further, a snubber circuit for absorbing surge voltage can be omitted or minimized, and an inverter control device having a highly reliable connection structure can be provided.

[Brief description of the drawings]

FIG. 1 is a diagram showing an embodiment of the present invention;

FIG. 2 is a circuit diagram of the present invention,

FIG. 3 is a circuit diagram of a general inverter,

FIG. 4 is a conventional connection structure diagram.

[Description of Signs] 1-1b, 2-2b, 18-18b, 20-20b ... Semiconductor power element 3,19 ... Semiconductor power element for regeneration 3a ... Semiconductor power element for charge control 4 .... Diode element 4a, 5,21 ... Diode module elements 6 to 6c, 17, 26 to 26c ... DC smoothing capacitors 7 to 7b ... Surge voltage absorbing capacitors 8 to 8b, 10, 11, 24 to 24c, 27 ... Relay conductors 9 to 9b ... Output electrode conductors 12, 12a, 22 ... relay positive electrode conductor 13, 13a, 23 ... relay negative electrode conductor 14 ... semiconductor power element group 15, 25-25b ... surge voltage absorbing snubber circuit 16 ... regeneration semiconductor power element circuit

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-3-155696 (JP, A) JP-A-1-194344 (JP, A) JP-A-63-171129 (JP, A) 84270 (JP, U) (58) Fields investigated (Int. Cl. ⁶ , DB name) H02M 7/42-7/98 H02P 7/63 H02P 3/18 H02P 3/22 H02J 7/00-7/10 H02J 7/14

Claims (1)

(57) [Scope of request for utility model registration] 1. A semiconductor power device for converting a DC power of a battery into an AC power to control an induction motor to operate as a motor and a generator, and a regenerative device for controlling a current flowing to a discharge resistor when the battery is fully charged. The diode connected in the forward direction from the positive electrode side of the semiconductor power device and the battery, the DC smoothing capacitor connected between the charge control semiconductor power device of the battery and the output terminal of the DC circuit, and the surge absorbing capacitor connected between the DC circuits. An inverter control device comprising: connecting the semiconductor power element group, the diode group, and the capacitor group to a plate-shaped conductor.