JP2591429B2 - Magnetoresistive element - Google Patents
Magnetoresistive elementInfo
- Publication number
- JP2591429B2 JP2591429B2 JP5155953A JP15595393A JP2591429B2 JP 2591429 B2 JP2591429 B2 JP 2591429B2 JP 5155953 A JP5155953 A JP 5155953A JP 15595393 A JP15595393 A JP 15595393A JP 2591429 B2 JP2591429 B2 JP 2591429B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- good conductor
- magnetoresistive element
- magnetic thin
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Hall/Mr Elements (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は磁気抵抗素子に関し、特
に乾式エッチング工法により形成された磁気抵抗素子に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive element, and more particularly to a magnetoresistive element formed by a dry etching method.
【０００２】[0002]
【従来の技術】従来の磁気抵抗素子の薄膜構造では、図
２に示すように、下地の磁性薄膜上に外部回路接続のた
めの良導体金属が直接被覆されている。磁気検出部は、
検出感度を上げるため、良導体金属を部分的に除去する
が、エッチング精度の関係で乾式エッチングを用いる場
合が多い。2. Description of the Related Art In a conventional thin film structure of a magnetoresistive element, as shown in FIG. 2, a good conductor metal for external circuit connection is directly coated on an underlying magnetic thin film. The magnetic detector is
In order to increase the detection sensitivity, the good conductor metal is partially removed, but dry etching is often used due to etching accuracy.
【０００３】[0003]
【発明が解決しようとする課題】上述した従来の方法で
は、乾式エッチングの際に、良導体金属のエッチング終
点の見極めが難かしく、特に磁性薄膜としてパーマロイ
を使用し良導体金属として金を使用する場合、両者は色
調が似ているため、エッチング過不足になり易いという
欠点があった。終点の検出は一般に目視で行なうため人
によるバラツキも大きく、膜厚等の製造バラツキにより
変動する最適終点に追従できないという問題があった。In the conventional method described above, it is difficult to determine the etching end point of a good conductor metal during dry etching. Particularly, when permalloy is used as a magnetic thin film and gold is used as a good conductor metal, Since both have similar color tones, there is a disadvantage that etching tends to be excessive or insufficient. Since the detection of the end point is generally performed by visual observation, there is a large variation by a person, and there is a problem that it is not possible to follow an optimum end point which fluctuates due to a manufacturing variation such as a film thickness.
【０００４】本発明の目的は、上述した欠点を除去し、
乾式エッチングを行う場合の良導体金属のエッチング終
点が容易に判断できる磁気抵抗素子を提供することにあ
る。[0004] It is an object of the present invention to obviate the disadvantages mentioned above,
An object of the present invention is to provide a magnetoresistive element in which the end point of etching of a good conductor metal when dry etching is performed can be easily determined.
【０００５】[0005]
【課題を解決するための手段】上述の欠点を除去するた
めに、本発明の磁気抵抗素子は磁性薄膜と良導体金属と
の間に当該材料と色調が異なる金属膜を設けたことを特
徴としている。In order to eliminate the above-mentioned drawbacks, the magnetoresistive element of the present invention is characterized in that a metal film having a different color tone from the material is provided between a magnetic thin film and a good conductor metal. .
【０００６】[0006]
【実施例】次に本発明を図面を参照して詳細に説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the drawings.
【０００７】図１は本発明の一実施例を示す磁気抵抗素
子の断面図である。図において、基板１の表面に、磁性
薄膜２と良導体金属３とエッチング終点を明らかにする
ための金属４が形成されている。基板１はシリコンウェ
ハ等の半導体から構成されている。磁性薄膜２は磁気抵
抗効果を有するＮｉ−Ｆｅ等の合金から構成され、蒸着
法により基板１表面に形成される。続いて磁性薄膜２の
表面にエッチング終点金属４と良導体金属３を蒸着法に
より形成される。良導体金属３はＡｕ等の良導体からな
り、外部回路と接続する端子部として用いられる。エッ
チング終点金属４としては、磁性薄膜２、良導体金属３
と明確に色調の異なる金属からなり磁気抵抗特性にも影
響の無い金属が用いられている。一例として、８５Ｎｉ
−１５Ｆｅ〔ΔＰ／ＰＯ（異方性磁気抵抗係数）・・・
３．５５％〕の磁性薄膜の上に、９８Ｎｉ−２Ｍｎ〔Δ
Ｐ−ＰＯ（異方性磁気抵抗係数）・・・２．９３％〕の
金属膜４を形成した。FIG. 1 is a sectional view of a magnetoresistive element showing one embodiment of the present invention. In the figure, on a surface of a substrate 1, a magnetic thin film 2, a good conductor metal 3, and a metal 4 for defining an etching end point are formed. The substrate 1 is made of a semiconductor such as a silicon wafer. The magnetic thin film 2 is made of an alloy such as Ni-Fe having a magnetoresistance effect, and is formed on the surface of the substrate 1 by a vapor deposition method. Subsequently, an etching end point metal 4 and a good conductor metal 3 are formed on the surface of the magnetic thin film 2 by a vapor deposition method. The good conductor metal 3 is made of a good conductor such as Au, and is used as a terminal portion connected to an external circuit. Magnetic thin film 2, good conductor metal 3 as etching end point metal 4
A metal having a distinctly different color tone and having no influence on the magnetoresistance characteristics is used. As an example, 85Ni
-15Fe [ΔP / PO (anisotropic magnetoresistance coefficient) ...
3.55%] on a magnetic thin film of 98Ni-2Mn [Δ
P-PO (anisotropic magnetoresistance coefficient): 2.93%] was formed.
【０００８】 この金属膜４上に所定のパターンを形成
するため、良導体金属３の表面に所定パターンのホトレ
ジストを施し、乾式エッチング工法により端子部５とし
て用いるＡｕ以外の良導体金属３をエッチングする。良
導体金属３のエッチングが終了した時点で色調の異なる
エッチング終点表示用の金属が露出した時点でエッチン
グ終点とする。In order to form a predetermined pattern on the metal film 4, a photoresist having a predetermined pattern is applied to the surface of the good conductor metal 3, and the good conductor metal 3 other than Au used as the terminal 5 is etched by a dry etching method. At the time when the etching of the good conductor metal 3 is completed, the etching end point is determined when the metal for displaying the etching end point having a different color tone is exposed.
【０００９】この様に構成すると、磁性薄膜２と良導体
金属３の膜厚が製造バラツキにより変動しても、エッチ
ング終点金属４の露出点を明確な終点として検出できる
ため、目視で容易に、個人差も少なく製造可能となる。With this configuration, even if the film thickness of the magnetic thin film 2 and the good conductor metal 3 fluctuates due to manufacturing variations, the exposed point of the etching end point metal 4 can be detected as a clear end point. It can be manufactured with little difference.
【００１０】[0010]
【発明の効果】以上説明したように、本発明ではエッチ
ング終点表示用金属膜を設けることにより、乾式エッチ
ングの終点検出が容易で安定的なエッチング精度が得ら
れるという効果がある。As described above, according to the present invention, by providing the etching end point indicating metal film, the end point of dry etching can be easily detected and stable etching accuracy can be obtained.
【図１】本発明の一実施例を示す断面図。FIG. 1 is a sectional view showing an embodiment of the present invention.
【図２】従来例の断面図。FIG. 2 is a sectional view of a conventional example.
１ 基板 ２ 磁性薄膜 ３ 良導体金属 ４ エッチング終点金属 ５ 端子部 DESCRIPTION OF SYMBOLS 1 Substrate 2 Magnetic thin film 3 Good conductor metal 4 Etching end metal 5 Terminal part
Claims (2)
子において、 乾式エッチング工程により所定のパターンエッチングす
る際、磁性薄膜と端子部の良導体金属層間に、マンガン
を含む金属を配置したことを特徴とする磁気抵抗素子。In a magnetoresistive element having a magnetic thin film formed on a substrate, a metal containing manganese is arranged between the magnetic thin film and a good conductor metal layer of a terminal portion when a predetermined pattern is etched by a dry etching process. A magnetoresistive element.
子において、 乾式エッチング工程により所定のパターンエッチングす
る際、磁性薄膜と端子部の良導体金属層間に、９８Ｎｉ
−２Ｍｎを含む金属を配置したことを特徴とする磁気抵
抗素子。2. A magnetoresistive element having a magnetic thin film formed on a substrate, wherein when a predetermined pattern is etched by a dry etching process, 98Ni is interposed between the magnetic thin film and a good conductor metal layer of a terminal portion.
A magnetoresistive element comprising a metal containing -2Mn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5155953A JP2591429B2 (en) | 1993-06-28 | 1993-06-28 | Magnetoresistive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5155953A JP2591429B2 (en) | 1993-06-28 | 1993-06-28 | Magnetoresistive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0738172A JPH0738172A (en) | 1995-02-07 |
| JP2591429B2 true JP2591429B2 (en) | 1997-03-19 |
Family
ID=15617143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5155953A Expired - Lifetime JP2591429B2 (en) | 1993-06-28 | 1993-06-28 | Magnetoresistive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2591429B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5970736B2 (en) * | 2012-04-27 | 2016-08-17 | 住友電工デバイス・イノベーション株式会社 | Manufacturing method of semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57164982A (en) * | 1981-04-02 | 1982-10-09 | Fujitsu Ltd | Etching method |
| JPS60160676A (en) * | 1984-01-31 | 1985-08-22 | Sharp Corp | Dry type etching method of magnetoresistance effect element |
-
1993
- 1993-06-28 JP JP5155953A patent/JP2591429B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0738172A (en) | 1995-02-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19961029 |