JP2590377B2 - Power transistor mounting equipment - Google Patents
Power transistor mounting equipmentInfo
- Publication number
- JP2590377B2 JP2590377B2 JP1195778A JP19577889A JP2590377B2 JP 2590377 B2 JP2590377 B2 JP 2590377B2 JP 1195778 A JP1195778 A JP 1195778A JP 19577889 A JP19577889 A JP 19577889A JP 2590377 B2 JP2590377 B2 JP 2590377B2
- Authority
- JP
- Japan
- Prior art keywords
- power transistor
- housing
- circuit board
- mounting
- engine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Ignition Installations For Internal Combustion Engines (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は車載エンジンの点火装置に用いられるパワー
トランジスタ搭載装置に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power transistor mounted device used for an ignition device of a vehicle engine.
［従来の技術］ パワートランジスタを用いた自動車用の点火システム
ないしは点火装置においては、点火用の高電圧を発生さ
せるイグニッションコイルにパワートランジスタを介し
て電力が供給される。このパワートランジスタは周辺回
路と共にパワートランジスタ搭載装置と呼ばれる１個の
デバイスに収められて自動車に取り付けられる。パワー
トランジスタは作動時に発熱するため、パワートランジ
スタを搭載した装置には放熱設計を施す必要がある。2. Description of the Related Art In an automobile ignition system or ignition device using a power transistor, electric power is supplied via a power transistor to an ignition coil for generating a high voltage for ignition. This power transistor is housed in a single device called a power transistor mounting device together with peripheral circuits, and is attached to an automobile. Since the power transistor generates heat during operation, it is necessary to design a device equipped with the power transistor with a heat radiation design.
また、デストリビュータを有しない自動車用の点火装
置にあっては、パワートランジスタ及びその周辺回路や
イグニッションコイルが車載エンジンの各気筒ごとに必
要となる。このため、かかる点火装置においては、パワ
ートランジスタ搭載装置の占める割合が大きくなり、点
火装置が大型化する傾向がある。Further, in an automobile ignition device having no distributor, a power transistor, its peripheral circuit, and an ignition coil are required for each cylinder of the vehicle-mounted engine. For this reason, in such an ignition device, the ratio occupied by the device equipped with the power transistor increases, and the ignition device tends to be large.
［発明が解決しようとする課題］ しかし、点火装置を小型化するために、パワートラン
ジスタ及びその周辺回路の実装密度を上げてパワートラ
ンジスタ搭載装置の小型化を図ると、効果的な放熱を行
うことが難しくなる。[Problems to be Solved by the Invention] However, in order to reduce the size of the ignition device, it is necessary to increase the mounting density of the power transistor and its peripheral circuit to reduce the size of the device equipped with the power transistor. Becomes difficult.
そこで、放熱性を考慮してパワートランジスタ等の実
装密度を下げた場合には、パワートランジスタ搭載装置
が大型化し、前述の点火装置の大型化という問題が解決
されず、また、各パワートランジスタ搭載装置をエンジ
ン近傍、例えばシリンダ周囲、シリンダヘッド上、点火
プラグ隣接部分等に配置することが困難となる。Therefore, when the mounting density of the power transistor and the like is reduced in consideration of heat dissipation, the power transistor mounting device becomes large, and the above-mentioned problem of the enlargement of the ignition device is not solved. In the vicinity of the engine, for example, around the cylinder, on the cylinder head, adjacent to the spark plug, or the like.
本発明はこのような事情に鑑みてなされたもので、そ
の目的は、十分な放熱を行うことができ且つ十分に小型
でエンジン近傍に配置可能な車載エンジン用のパワート
ランジスタ搭載装置を提供することにある。The present invention has been made in view of such circumstances, and an object of the present invention is to provide a power transistor mounted device for an in-vehicle engine that can sufficiently dissipate heat, is sufficiently small, and can be arranged near the engine. It is in.
［課題を解決するための手段］ 本発明によるパワートランジスタ搭載装置は、車載エ
ンジン用の点火装置に用いられ且つ前記車載エンジンの
各気筒に対応して該車載エンジンの近傍に設けられるも
のであって、基台に取り付けられる取付部が外面に一体
的に設けられ、板状のマウント部が内面に一体的に設け
られた放熱用のハウジングと、前記点火装置に用いられ
るパワートランジスタを搭載してハウジングのマウント
部の上下両面にそれぞれ貼り付けられた回路基板と、ハ
ウジングに取り付けられて各端子が回路基板の各端子に
電気的に接続されるカプラと、マウント部の上面とその
上面に対向するハウジングの内面との間の隙間に、及
び、マウント部の前記下面とその下面に対向する前記ハ
ウジングの内面との間の隙間に充填された絶縁性のゲル
状物質とを備えたことを特徴としている。[Means for Solving the Problems] A power transistor mounted device according to the present invention is used for an ignition device for a vehicle-mounted engine, and is provided near the vehicle-mounted engine corresponding to each cylinder of the vehicle-mounted engine. A mounting portion for mounting on the base is provided integrally on the outer surface, a plate-shaped mounting portion is provided on the inner surface for heat dissipation, and a housing mounted with a power transistor used in the ignition device. A circuit board attached to both the upper and lower surfaces of the mounting portion, a coupler attached to the housing and each terminal electrically connected to each terminal of the circuit board, and a housing facing the upper surface of the mounting portion and the upper surface thereof Insulation filled in the gap between the inner surface of the housing and the gap between the lower surface of the mounting portion and the inner surface of the housing facing the lower surface. And a gel-like substance.
また、上記パワートランジスタ搭載装置のハウジング
は金属材料で形成され、上記回路基板はセラミック材料
で形成され、上記ゲル状物質はシリコンオイルであるこ
とが好適である。Preferably, the housing of the power transistor mounting device is formed of a metal material, the circuit board is formed of a ceramic material, and the gel material is silicon oil.
［作用］ 本発明によるパワートランジスタ搭載装置は、パワー
トランジスタが搭載された回路基板がハウジングのマウ
ント部の上下両面に貼り付けられた構造となっているの
で、この回路基板が内蔵されるパワートランジスタ搭載
装置の小型化が図れる。[Operation] The power transistor mounting apparatus according to the present invention has a structure in which the circuit board on which the power transistor is mounted is attached to both the upper and lower surfaces of the mounting portion of the housing. The size of the device can be reduced.
また、パワートランジスタにより発生された熱は回路
基板及びマウント部を経て外部のエンジンヘッドカバー
等に放散される。しかも、パワートランジスタ搭載装置
に充填されたゲル状物質が熱伝導物質として働き、パワ
ートランジスタの発生熱がパワートランジスタとゲル状
物質との接触面を介してパワートランジスタ搭載装置の
ハウジング外面に伝達されるので放熱が更に効果的に行
われる。Further, heat generated by the power transistor is dissipated to an external engine head cover and the like via the circuit board and the mounting portion. Moreover, the gel material filled in the power transistor mounted device functions as a heat conductive material, and the heat generated by the power transistor is transmitted to the outer surface of the housing of the power transistor mounted device via the contact surface between the power transistor and the gel material. Therefore, heat radiation is more effectively performed.
［実施例］ 以下、添付図面を参照して本発明の実施例を説明す
る。Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.
本発明によるパワートランジスタ搭載装置は、デスビ
レス型と呼ばれるデストリビュータを有しない車載エン
ジン用点火装置に適用されるものである。デスビレス型
点火装置においては、パワートランジスタ搭載装置は、
周知のごとく、エンジンの各気筒に対応して設けられ、
また、エンジンルーム内のエンジン近傍の適当な基台、
例えばシリンダ周囲部分やヘッドカバー上等のシリンダ
ヘッド上、或いは点火フラグ隣接部分に取り付けられる
ようになっている（図示せず）。The power transistor mounted device according to the present invention is applied to a vehicle-mounted engine ignition device having no distributor, called a desviles type. In the Desvilez type ignition device, the power transistor mounted device is
As is well known, it is provided for each cylinder of the engine,
Also, a suitable base near the engine in the engine room,
For example, it is mounted on a cylinder head, such as on a cylinder peripheral portion or a head cover, or on a portion adjacent to an ignition flag (not shown).
第１図はこのようなパワートランジスタ搭載装置を示
したものであり、同図（ａ）は上蓋の一部を破断した平
面図、同図（ｂ）はＢ−Ｂ線の一部を断面で示した側面
図、同図（ｃ）はＣ−Ｃ線の一部を断面で示した正面図
である。図示の通り、アルミニウム製のハウジング本体
10は中間のマウント部11が板状となって、その両側に取
付部12が延び、この取付部12にはボルト挿通用の開口13
が形成されている。この取付部12を用いて、パワートラ
ンジスタ搭載装置はエンジルーム内の適当な基台に取り
付けられることとなる。FIG. 1 shows such a power transistor mounting device. FIG. 1 (a) is a plan view in which a part of an upper lid is cut off, and FIG. FIG. 1C is a front view showing a part of the line C-C in a cross section. As shown, aluminum housing body
Reference numeral 10 denotes an intermediate mounting portion 11 having a plate-like shape, and mounting portions 12 extending on both sides thereof. The mounting portion 12 has an opening 13 for bolt insertion.
Are formed. By using the mounting portion 12, the power transistor mounting device is mounted on an appropriate base in the engine room.
また、ハウジング本体10はマウント部11と取付部12の
間でマウント部11を囲む壁状のハウジング部14に成形さ
れている。ハウジング本体10には取付部12が延びる方向
と直交する方向からカプラ20が取り付けられる。このカ
プラ20は端子板21とこれを囲む樹脂カバー22から構成さ
れ、端子板21の上面及び下面には配線23が形成されて外
部接続用の端子24に接続されている。なお、このカプラ
20は押え板30を介して、ねじ31によりハウジング本体10
に固定されている。The housing body 10 is formed into a wall-shaped housing portion 14 surrounding the mount portion 11 between the mount portion 11 and the mounting portion 12. The coupler 20 is attached to the housing body 10 from a direction orthogonal to the direction in which the attachment portion 12 extends. The coupler 20 includes a terminal plate 21 and a resin cover 22 surrounding the terminal plate 21. Wirings 23 are formed on the upper and lower surfaces of the terminal plate 21, and are connected to terminals 24 for external connection. In addition, this coupler
20 is a housing body 10 with screws 31 via a holding plate 30
It is fixed to.
マウント部11の上面及び下面には、例えばセラミック
スで形成された回路基板40がそれぞれ貼り付けられ、こ
の回路基板40にはパワートランジスタを含む半導体チッ
プ41がダイボンディングされている。そして、チップ41
のボンディングパッド、回路基板40上の各回路部（図示
せず）、端子板21上の各ボンディングパッドの相互間
は、ボンディングワイヤ42によって接続されている。な
お、ワイヤ42は同図（ｃ）においてのみ図示している。
ハウジング本体10のハウジング部14の上側及び下側には
上蓋51及び底蓋52が固着され、これによって内部が封止
されている。なお、ハウジング本体10のこの内部には、
絶縁性のゲル状物質、好ましくはシリコンオイルが封入
されている。その結果、マウント部11の上面と上蓋51の
下面との間、及び、マウント部11の下面と底蓋52の上面
との間の各隙間にゲル状物質が充填されることとなる。A circuit board 40 made of, for example, ceramics is attached to the upper and lower surfaces of the mount unit 11, respectively, and a semiconductor chip 41 including a power transistor is die-bonded to the circuit board 40. And chip 41
The bonding pads, the respective circuit portions (not shown) on the circuit board 40, and the respective bonding pads on the terminal board 21 are connected to one another by bonding wires. The wire 42 is shown only in FIG.
An upper lid 51 and a bottom lid 52 are fixed to the upper and lower sides of the housing portion 14 of the housing body 10, thereby sealing the inside. In addition, in this inside of the housing body 10,
An insulating gel-like substance, preferably silicone oil is enclosed. As a result, the gap between the upper surface of the mount 11 and the lower surface of the upper lid 51 and the gap between the lower surface of the mount 11 and the upper surface of the bottom lid 52 are filled with the gel-like substance.
上記の構成によれば、パワートランジスタ等をマウン
トした回路基板40はマウント部11の上下の両面に貼り付
けられるので、実装密度を高めてデバイス全体の小型化
を実現できる。また、マウント部11は取付部12等と一体
となってハウジング本体10を構成し、しかも回路基板40
はセラミックス、マウンド部11はアルミニウム等で形成
されるので、放熱性を高くできる。この放熱効果はマウ
ント部11を厚く形成し、或いはハウジング部14の外側に
放熱用のフィン等を設けることで、更に高めることがで
きる。また、マウント部11上のパワートランジスタ等か
ら発生した熱は、ゲル状物質を媒介として、上蓋51及び
底蓋52へと伝えられる。このゲル状物質の使用によっ
て、放熱効果は更に向上される。なお、上記実施例で
は、ハウジング本体10のハウジング部14、カプラ20の一
部、押え板30、上蓋51及び底蓋52が、内部に回路基板40
を収容するための放熱用のハウジングを構成するものと
してるが、ハウジングの形態はこれに限定されるもので
はない。例えば、カプラ20をハウジング本体10にあらか
じめインサート成型しておいてもよい。According to the above configuration, since the circuit board 40 on which the power transistor and the like are mounted is attached to both the upper and lower surfaces of the mount section 11, the mounting density can be increased and the size of the entire device can be reduced. Further, the mounting portion 11 constitutes the housing body 10 integrally with the mounting portion 12 and the like.
Is formed of ceramics, and the mound portion 11 is made of aluminum or the like, so that the heat dissipation can be improved. This heat radiation effect can be further enhanced by forming the mount portion 11 thicker or by providing heat radiation fins or the like outside the housing portion 14. Further, heat generated from a power transistor or the like on the mount portion 11 is transmitted to the upper lid 51 and the bottom lid 52 via a gel-like substance. By using this gel-like substance, the heat radiation effect is further improved. In the above embodiment, the housing portion 14 of the housing body 10, a part of the coupler 20, the holding plate 30, the top cover 51, and the bottom cover 52 are internally provided with the circuit board 40.
A housing for radiating heat for accommodating the housing is configured, but the form of the housing is not limited to this. For example, the coupler 20 may be insert-molded in the housing body 10 in advance.
［発明の効果］ 本発明によれば、パワートランジスタを搭載したセラ
ミック等からなる回路基板は、エンジンルーム内の基台
に固定されるハウジングの上下両面に貼付されるので、
装置の小型化とパワートランジスタからの熱の放熱性の
向上を同時に達成できる効果がある。[Effects of the Invention] According to the present invention, a circuit board made of ceramic or the like on which a power transistor is mounted is attached to both upper and lower surfaces of a housing fixed to a base in an engine room.
This has the effect of simultaneously achieving the miniaturization of the device and the improvement of the heat dissipation of the heat from the power transistor.
また、ハウジング内部にシリコンオイル等のゲル状物
質が封入され、マウント部の上面及び下面とそれに対向
するハウジング内面との間の隙間にそのゲル状物質が介
在されているので、本装置の放熱効果は更に向上され
る。即ち、空気よりも遥かに熱伝導率の良いゲル状物質
が充填されることで、パワートランジスタで発生された
熱は、マウント部のみならずゲル状物質によってもハウ
ジング外面に伝達され、よって、効率の高い放熱が達成
される。Also, a gel-like substance such as silicone oil is sealed in the housing, and the gel-like substance is interposed in the gap between the upper and lower surfaces of the mount portion and the inner surface of the housing facing the same. Is further improved. In other words, by filling the gel material having a much higher thermal conductivity than air, the heat generated by the power transistor is transmitted to the outer surface of the housing not only by the mount portion but also by the gel material, and thus the efficiency is improved. High heat dissipation is achieved.
このように、本発明のパワートランジスタ搭載装置は
高い放熱性を維持しつつ小型化されているので、パワー
トランジスタ搭載装置を有する点火装置の小型化が可能
となる。従って、点火装置が放置される自動車内のスペ
ースの有効利用を図ることが可能となる。As described above, since the power transistor mounted device of the present invention is downsized while maintaining high heat dissipation, the ignition device having the power transistor mounted device can be downsized. Therefore, it is possible to effectively use the space in the automobile where the ignition device is left.
また、パワートランジスタ搭載装置自体を小型化でき
ることから、車載エンジンの各気筒ごとに設ける必要の
あるパワートランジスタ搭載装置を狭いエンジンルーム
内のエンジン近傍に配置することが可能となる。Further, since the power transistor mounted device itself can be downsized, the power transistor mounted device that needs to be provided for each cylinder of the vehicle-mounted engine can be arranged near the engine in a narrow engine room.
従って、各パワートランジスタ搭載装置を車載エンジ
ンの対応のシリンダヘッド上に一体的に取り付けること
が可能となり、その場合、シリンダヘッドの放熱作用に
より更にパワートランジスタ搭載装置の放熱効果が向上
する。これは、パワートランジスタ搭載装置に搭載され
たパワートランジスタは半導体等に対する熱的影響を抑
制ないしは軽減するものであり、それらの性能を安定化
させると共に寿命を延ばすという効果を奏するものであ
る。Therefore, it is possible to integrally mount each power transistor mounted device on the corresponding cylinder head of the vehicle-mounted engine. In this case, the heat radiation effect of the power transistor mounted device is further improved by the heat radiation effect of the cylinder head. This is because the power transistor mounted on the power transistor mounting device suppresses or reduces the thermal influence on semiconductors and the like, and has the effect of stabilizing their performance and extending their life.
更にまた、パワートランジスタ搭載装置の小型化によ
り、点火プラグとの一体化も可能となる。パワートラン
ジスタ搭載装置が点火プラグと一体化して配置された際
には、ハイテンションコード（エンジンの点火装置と各
点火プラグとを接続する高圧電線）が不要になる。ま
た、ハイテンションコードを省いた場合には、有害電波
雑音の発生が抑制され、点火エネルギの増大によるエン
ジンの出力向上及び焼費性能の向上という効果が得られ
る。Furthermore, the miniaturization of the power transistor mounting device enables integration with a spark plug. When the power transistor mounting device is arranged integrally with the ignition plug, a high tension cord (a high-voltage electric wire connecting the ignition device of the engine and each ignition plug) is not required. When the high tension cord is omitted, the generation of harmful electric wave noise is suppressed, and the effect of improving the output of the engine and improving the burn-up performance by increasing the ignition energy is obtained.
第１図は本発明の実施例に係るパワートランジスタ搭載
装置の構成を示す図である。 10……ハウジング本体、11……マウント部、12……取付
部、13……開口、14……ハウジング部、20……カプラ、
21……端子板、22……樹脂カバー、23……配線、30……
押さ板、40……回路基板、41……チップ、42……ワイ
ヤ、51……上蓋、52……底蓋。FIG. 1 is a diagram showing a configuration of a power transistor mounting apparatus according to an embodiment of the present invention. 10 ... housing body, 11 ... mounting part, 12 ... mounting part, 13 ... opening, 14 ... housing part, 20 ... coupler,
21 ... Terminal board, 22 ... Resin cover, 23 ... Wiring, 30 ...
Pressing plate, 40 ... circuit board, 41 ... chip, 42 ... wire, 51 ... top cover, 52 ... bottom cover.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭58−101498（ＪＰ，Ａ) 実開 昭62−108519（ＪＰ，Ｕ) 実開 昭61−59392（ＪＰ，Ｕ) 実開 昭58−44898（ＪＰ，Ｕ) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-58-101498 (JP, A) JP-A 62-108519 (JP, U) JP-A 61-59392 (JP, U) JP-A 58-101 44898 (JP, U)
Claims (2)
記車載エンジンの各気筒に対応して該車載エンジンの近
傍に設けられるパワートランジスタ搭載装置であって、 基台に取り付けられる取付部が外面に一体的に設けら
れ、板状のマウント部が内面に一体的に設けられた放熱
用のハウジングと、 前記点火装置に用いられるパワートランジスタを搭載し
て前記ハウジングの前記マウント部の上下両面にそれぞ
れ貼り付けられた回路基板と、 前記ハウジングに取り付けられて各端子が前記回路基板
の各端子に電気的に接続されるカプラと、 前記マウント部の前記上面とその上面に対向する前記ハ
ウジングの内面と間の隙間に、及び、前記マウント部の
前記下面とその下面に対向する前記ハウジングの内面と
の間の隙間に充填された絶縁性のゲル状物質と を備えたパワートランジスタ搭載装置。1. A power transistor mounted device used in an ignition device for a vehicle engine and provided in the vicinity of the vehicle engine corresponding to each cylinder of the vehicle engine, wherein a mounting portion mounted on a base has an outer surface. And a heat-dissipating housing integrally provided with a plate-shaped mount portion on the inner surface thereof, and a power transistor used for the ignition device mounted thereon, and mounted on both upper and lower surfaces of the mount portion of the housing. An attached circuit board, a coupler attached to the housing and each terminal being electrically connected to each terminal of the circuit board; and an upper surface of the mount portion and an inner surface of the housing facing the upper surface. Insulating gaps filled in the gaps between the lower surface of the mount portion and the inner surface of the housing facing the lower surface. A power transistor mounting device comprising:
記回路基板はセラミック材料で形成され、前記ゲル状物
質はシリコンオイルであることを特徴とする請求項１記
載のパワートランジスタ搭載装置。2. The power transistor mounting device according to claim 1, wherein said housing is formed of a metal material, said circuit board is formed of a ceramic material, and said gel-like substance is silicon oil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1195778A JP2590377B2 (en) | 1989-07-28 | 1989-07-28 | Power transistor mounting equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1195778A JP2590377B2 (en) | 1989-07-28 | 1989-07-28 | Power transistor mounting equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0360196A JPH0360196A (en) | 1991-03-15 |
| JP2590377B2 true JP2590377B2 (en) | 1997-03-12 |
Family
ID=16346810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1195778A Expired - Fee Related JP2590377B2 (en) | 1989-07-28 | 1989-07-28 | Power transistor mounting equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2590377B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5844898U (en) * | 1981-09-21 | 1983-03-25 | 東洋通信機株式会社 | Heat dissipation structure of electronic circuit storage case |
| JPS6159392U (en) * | 1984-08-29 | 1986-04-21 |
-
1989
- 1989-07-28 JP JP1195778A patent/JP2590377B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0360196A (en) | 1991-03-15 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |