JP2587304Y2 - Chemical processing equipment for semiconductor wafers - Google Patents

Chemical processing equipment for semiconductor wafers

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Publication number
JP2587304Y2
JP2587304Y2 JP1993039585U JP3958593U JP2587304Y2 JP 2587304 Y2 JP2587304 Y2 JP 2587304Y2 JP 1993039585 U JP1993039585 U JP 1993039585U JP 3958593 U JP3958593 U JP 3958593U JP 2587304 Y2 JP2587304 Y2 JP 2587304Y2
Authority
JP
Japan
Prior art keywords
wafer
chemical
processing
rotation
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1993039585U
Other languages
Japanese (ja)
Other versions
JPH077140U (en
Inventor
敏路 津曲
Original Assignee
コマツ電子金属株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コマツ電子金属株式会社 filed Critical コマツ電子金属株式会社
Priority to JP1993039585U priority Critical patent/JP2587304Y2/en
Publication of JPH077140U publication Critical patent/JPH077140U/en
Application granted granted Critical
Publication of JP2587304Y2 publication Critical patent/JP2587304Y2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【考案の詳細な説明】[Detailed description of the invention]

【0001】[0001]

【産業上の利用分野】本考案は半導体ウェハの薬液処理
装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for treating chemical liquids on semiconductor wafers.

【0002】[0002]

【従来技術】近年、益々デバイスの集積度が高まる中
で、半導体ウェハにはその結晶特性、加工特性への要求
が年々厳しいものとなっており、加工特性の中では表面
の清浄度、平坦度は勿論のこと、デバイス工程において
パーティクルの発生源ともいわれる面取部の表面粗さに
対しても、従来以上に厳しい要求がなされてきている。
このため、エッチングや洗浄等の薬液処理が極めて重要
となってきている。従来から、ウェハの同一面内での均
一性を維持するためにウェハの表面を均一に薬液に触れ
させる目的で種々の工夫がなされ、ウェハを回転させた
り、揺動させ処理を行う装置として、実開平3−979
26、実開平3−2632、実開昭57−29140等
が公知である。これらの装置は、ウェハに回転を与える
ために、1本または2本の回動軸をウェハ端部に接触さ
せて回転させており、従来のウェハ面取部の表面粗さ程
度であれば、充分な摩擦抵抗が得られるため、上記の従
来の装置でも充分にウェハを回転させることができたた
め、薬液処理の目的は達成できていた。
2. Description of the Related Art In recent years, as the degree of integration of devices has been increasing more and more, the requirements for crystal characteristics and processing characteristics of semiconductor wafers have become more stringent year by year. Needless to say, stricter requirements have been placed on the surface roughness of the chamfered portion, which is also referred to as a source of particles in the device process, than ever before.
For this reason, chemical treatments such as etching and cleaning have become extremely important. Conventionally, various devices have been devised to uniformly contact the surface of the wafer with a chemical solution in order to maintain uniformity within the same plane of the wafer, and as a device for performing processing by rotating or swinging the wafer, 3-979
26, Japanese Utility Model Laid-Open No. 3-2632, Japanese Utility Model Application Laid-Open No. 57-29140, and the like are known. These apparatuses rotate one or two rotating shafts in contact with the edge of the wafer in order to impart rotation to the wafer. Since a sufficient frictional resistance can be obtained, the wafer can be sufficiently rotated even with the above-mentioned conventional apparatus, so that the purpose of the chemical treatment has been achieved.

【0003】[0003]

【考案が解決しようとする課題】しかし,近年デバイス
の集積度が高まるにつれて、デバイス工程でウェハの端
部からパーティクルや欠け、チップが発生することを防
止するために、面取部の表面粗さの改善が要求されるよ
うになり、面取部の加工仕上に、滑面化が要求されるよ
うになってきた。因みに、表面粗さを表面の凹凸の高低
差と定義すれば、従来品の表面粗さが0.07μである
のに対して、滑面化品は0.03μ、鏡面化品は0.0
1μ位のグレードである。このように面取部の表面仕上
げが細かい滑面化品や鏡面化品を、従来の薬液処理法で
ウェハを回転させてエッチング或いは洗浄等の薬液処理
を行うと、ウェハを回転させるための回動軸とウェハ面
取部との摩擦抵抗が従来品に比べて小さくなるためウェ
ハと回動軸間で滑りが発生し、ウェハの回転ムラや回転
停止が起こり、その結果、エッチング或いは洗浄ムラの
不良発生が多くなっていた。更に、回動軸とウェハ間の
摩擦抵抗を増し、ウェハの回転を良くする為に、回動軸
をフッ素ゴム製のカバーで取り巻いているが、このこと
がウェハ端面の磨耗の原因になるという問題があった。
However, as the degree of integration of devices has increased in recent years, the surface roughness of the chamfered portion has to be reduced in order to prevent particles, chips and chips from being generated from the edge of the wafer in the device process. Has been demanded, and a smooth finish has been required for the finishing of the chamfered portion. By the way, if the surface roughness is defined as the height difference of the unevenness of the surface, the surface roughness of the conventional product is 0.07 μ, whereas the smooth surface product is 0.03 μ and the mirror surface product is 0.07 μ.
The grade is about 1μ. When a smoothed product or a mirror-finished product having a fine surface finish of the chamfered portion is subjected to a chemical treatment such as etching or cleaning by rotating the wafer by a conventional chemical treatment method, a rotation for rotating the wafer is performed. Since the frictional resistance between the moving shaft and the chamfered portion of the wafer is smaller than that of the conventional product, slippage occurs between the wafer and the rotating shaft, and uneven rotation or stop of the wafer occurs. As a result, etching or cleaning unevenness occurs. The occurrence of defects was increasing. Further, in order to increase the frictional resistance between the rotating shaft and the wafer and to improve the rotation of the wafer, the rotating shaft is surrounded by a cover made of fluoro rubber, which causes wear of the wafer end surface. There was a problem.

【0004】[0004]

【課題を解決するための手段】このため本考案では、上
記の問題点を解決するため、複数の半導体ウェハをキャ
リアに装填して処理液を収容した処理槽内に浸漬し、複
数のウェハのそれぞれの端部を回動軸に接触させ、回動
軸の回転により、半導体ウェハを回転させて処理加工を
行う薬液処理装置において、ウェハの中心より下方で、
ウェハの中心を中心とする円周上に4本の回動軸を設け
ると共に、その回動軸の少なくとも3本の回動軸が、オ
リフラ部を1ヵ所有する半導体ウェハのウェハ端部と常
時接触するようにしたことを特徴とする。
According to the present invention, in order to solve the above-mentioned problems, a plurality of semiconductor wafers are loaded into a carrier, immersed in a processing tank containing a processing solution, and a plurality of wafers are processed. In a chemical solution processing apparatus in which each end is brought into contact with a rotation axis and a semiconductor wafer is rotated to perform processing by rotation of the rotation axis, below the center of the wafer,
Four rotating shafts are provided on a circumference centered on the center of the wafer, and at least three of the rotating shafts are in constant contact with the wafer end of a semiconductor wafer having one orientation flat. It is characterized by doing.

【0005】[0005]

【作用】本考案の半導体ウェハの薬液処理装置で、ウェ
ハのエッチングや洗浄の薬液処理を行えば、従来の1本
或いは2本の回動軸によって回転させるのに比べて、4
本の回動軸によって回転を与えるので、2〜4倍の回転
力をウェハへ与えることになる。また、オリフラ部を1
ヵ所有するウェハにおいては少なくとも3本の回動軸
が、常時ウェハ端部と接触しているため、スムーズにウ
ェハを回転させることができ、そのため、薬液処理をウ
ェハ面内において均一に行うことができる。更に、この
ため、摩擦を大きくするための回動軸を取り巻く耐酸性
フッ素ゴムカバーが不要となり、加えて、上記で説明し
たウェハと同円上の接点を持つ回動軸数が増えたことに
より、より分散された荷重が樹脂製の回動軸に直接かか
るようになり、滑らかなウェハの応動回転が確保される
ため、回動軸とウェハの摩擦によって生じるウェハの磨
耗を大幅に減少改善することができる。
With the semiconductor wafer chemical processing apparatus of the present invention, if a chemical processing for etching or cleaning of a wafer is performed, the semiconductor wafer is processed by four or more rotating shafts in comparison with the conventional one or two rotating shafts.
Since the rotation is given by the rotation axis of the book, a rotation force of 2 to 4 times is given to the wafer. The orientation flat is 1
In a wafer owned by at least three wafers, at least three rotating shafts are constantly in contact with the edge of the wafer, so that the wafer can be smoothly rotated, and therefore, the chemical solution processing can be uniformly performed on the wafer surface. . Furthermore, for this reason, the acid-resistant fluoro rubber cover surrounding the rotating shaft for increasing the friction becomes unnecessary, and in addition, the number of rotating shafts having the same circular contacts as the wafer described above is increased. A more dispersed load is directly applied to the rotating shaft made of resin, and smooth rotation of the wafer is ensured, so that wear of the wafer caused by friction between the rotating shaft and the wafer is greatly reduced and improved. be able to.

【0006】[0006]

【実施例】本考案の実施例を図面を参照して説明する。
図1は本考案に係る薬液処理装置における半導体ウェハ
の薬液処理状態を示す要部断面図、図2、図3、図4及
び図5はウェハ薬液処理中のウェハ端部、特にオリフラ
部と4本の回動軸との位置関係を示す正面図である。図
1に示されるように、処理槽1の底部に多数の孔21を
有するすのこ2が処理槽1の底部全体に設けられてい
る。これは処理槽1をオーバーフローした薬液を補うた
めに設けられた薬液の流入口にあたる。また、この処理
槽1は、ウェハ3をキャリア4に装填した状態で、キャ
リア4をすのこ2の上に干渉されることなく載荷できる
スペースを有する。さらに、4本の樹脂性の回動軸5
が、駆動源を介してウェハを応動回転させるように水平
方向に取りつけられている。実際にウェハを取りつける
際には、ウェハ端部31をキャリア4の溝底から僅かに
浮かせ、オリフラ部32以外のウェハ端部31に同時に
接触するようにされる。そして回動軸5はキャリア4に
接触しないよう、図1に示される様に左右対称に配置さ
れていれる。実際の作業工程においては、薬液6が入っ
た上記の薬液処理装置に、複数のウェハ3は、装填され
たキャリア4の溝底から僅かに浮き上がり、ウェハ端部
31は回動軸5に接した状態にある。この状態から4本
の回動軸5が同じ方向に回転すると、ウェハ3は回動軸
5と反対方向に回転をし始める。ウェハの回転動作にお
いては、オリフラ部32以外のウェハ端部31に接して
いる回動軸5が、ウェハ3に回転力を与えることにな
り、オリフラ部32が回動軸5に接する位置では、図
2、図3、図4、及び図5に示すように、4本の回動軸
5のうち3本は常時ウェハに接している。オリフラ部3
2の長さはウェハ全長の12%程度であるので、ウェハ
3を回転させるにはほとんど影響はなく、4本で回転さ
せることによる慣性力も、ウェハ3が滞ることなくスム
ーズに回転を続けるのを助けている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a cross-sectional view of a main part showing a chemical processing state of a semiconductor wafer in a chemical processing apparatus according to the present invention, and FIGS. 2, 3, 4 and 5 are wafer end parts during wafer chemical processing, in particular, orientation flats 4 and 4. It is a front view which shows the positional relationship with the rotating shaft of a book. As shown in FIG. 1, a saw blade 2 having a large number of holes 21 at the bottom of the processing tank 1 is provided on the entire bottom of the processing tank 1. This corresponds to an inflow port of a chemical solution provided to supplement the chemical solution overflowing the processing tank 1. Further, the processing tank 1 has a space in which the carrier 4 can be loaded on the die 2 without being interfered with the wafer 3 loaded in the carrier 4. Furthermore, four resin-made rotating shafts 5
Are mounted horizontally so as to rotate the wafer responsively via a drive source. When actually mounting the wafer, the wafer end 31 is slightly lifted from the groove bottom of the carrier 4 so as to be in contact with the wafer end 31 other than the orientation flat 32 at the same time. The rotating shaft 5 is symmetrically arranged so as not to contact the carrier 4 as shown in FIG. In the actual working process, the plurality of wafers 3 slightly lifted from the groove bottom of the loaded carrier 4 in the above-described chemical processing apparatus containing the chemical 6, and the wafer end 31 was in contact with the rotating shaft 5. In state. When the four rotating shafts 5 rotate in the same direction from this state, the wafer 3 starts rotating in the direction opposite to the rotating shaft 5. In the rotation operation of the wafer, the rotating shaft 5 that is in contact with the wafer end 31 other than the orientation flat portion 32 applies a rotating force to the wafer 3, and at the position where the orientation flat portion 32 contacts the rotating shaft 5, As shown in FIGS. 2, 3, 4, and 5, three of the four rotating shafts 5 are always in contact with the wafer. Orientation flat part 3
Since the length of the wafer 2 is about 12% of the entire length of the wafer, the rotation of the wafer 3 is hardly affected. Helping.

【0007】[0007]

【効果】本考案の薬液処理装置で半導体ウェハのエッチ
ング或いは洗浄の薬液処理が行われると、ウェハ面取部
の加工仕上が滑面化品或いは鏡面化品であっても、ウェ
ハの回転がスムーズに行われるので、回転不良によるエ
ッチングムラ、或いは洗浄ムラが無くなり、従来、滑面
化品で3%、鏡面化品で10%あった不良がほぼ0%に
減少した。加えて、ウェハ荷重の分散およびウェハの接
触が樹脂性回動軸であるため、従来片面エッチング取代
の2倍以上あったウェハの端面磨耗が大幅に改善され
た。
[Effect] When the chemical processing apparatus for etching or cleaning a semiconductor wafer is performed by the chemical processing apparatus of the present invention, the wafer can be smoothly rotated even if the processing finish of the wafer chamfer is a smooth or mirror-finished product. , Etching unevenness or cleaning unevenness due to poor rotation is eliminated, and the defect which was 3% in the case of the smooth surfaced product and 10% in the case of the mirror surfaced product was reduced to almost 0%. In addition, since the dispersion of the wafer load and the contact of the wafer are made of the resinous rotation axis, the abrasion of the end face of the wafer, which has conventionally been twice as large as the one-sided etching allowance, has been greatly improved.

【0008】[0008]

【図面の簡単な説明】[Brief description of the drawings]

【図1】本考案に係る薬液処理装置における半導体ウェ
ハの薬液処理状態を示す要部断面図である。
FIG. 1 is a cross-sectional view of a main part showing a chemical liquid processing state of a semiconductor wafer in a chemical liquid processing apparatus according to the present invention.

【図2】ウェハの薬液処理中のウェハ端部、特にオリフ
ラ部と4本の回動軸との位置関係を示す正面図である。
FIG. 2 is a front view illustrating a positional relationship between an end portion of a wafer during a chemical liquid processing of the wafer, particularly, an orientation flat portion and four rotation axes.

【図3】ウェハの薬液処理中のウェハ端部、特にオリフ
ラ部と4本の回動軸との位置関係を示す正面図である。
FIG. 3 is a front view showing a positional relationship between an end portion of the wafer during the chemical liquid processing of the wafer, in particular, an orientation flat portion and four rotation axes.

【図4】ウェハの薬液処理中のウェハ端部、特にオリフ
ラ部と4本の回動軸との位置関係を示す正面図である。
FIG. 4 is a front view illustrating a positional relationship between an end portion of a wafer during a chemical liquid processing of the wafer, particularly, an orientation flat portion and four rotation axes.

【図5】ウェハの薬液処理中のウェハ端部、特にオリフ
ラ部と4本の回動軸との位置関係を示す正面図である。
FIG. 5 is a front view showing a positional relationship between an edge portion of the wafer during the chemical liquid processing of the wafer, in particular, an orientation flat portion and four rotation axes.

【符号の説明】 1 処理槽 2 すのこ 21 孔 3 ウェハ 31 ウェハ端部 32 オリフラ部 4 キャリア 5 回動軸 6 薬液[Description of Signs] 1 Processing tank 2 Slender 21 Hole 3 Wafer 31 Wafer end 32 Ori-Fla 4 Carrier 5 Rotating shaft 6 Chemical solution

Claims (1)

(57)【実用新案登録請求の範囲】(57) [Scope of request for utility model registration] 【請求項1】 複数の半導体ウェハをキャリアに装填し
て処理液を収容した処理槽内に浸漬し、複数のウェハの
それぞれの端部を回動軸に接触させ、回動軸の回転によ
り、半導体ウェハを回転させて処理加工を行う薬液処理
装置において、ウェハの中心より下方で、ウェハの中心
を中心とする円周上に4本の回動軸を設けると共に、そ
の回動軸の少なくとも3本の回動軸が、オリフラ部を1
ヵ所有する半導体ウェハのウェハ端部と常時接触するよ
うにしたことを特徴とする半導体ウェハの薬液処理装
置。
A plurality of semiconductor wafers are loaded into a carrier, immersed in a processing tank containing a processing solution, and respective ends of the plurality of wafers are brought into contact with a rotating shaft. In a chemical solution processing apparatus that performs processing by rotating a semiconductor wafer, four rotation axes are provided on a circumference around the center of the wafer below the center of the wafer, and at least three of the rotation axes are provided. The rotation axis of the
A chemical processing apparatus for semiconductor wafers, wherein the apparatus is always in contact with the edge of the semiconductor wafer owned by the operator.
JP1993039585U 1993-06-10 1993-06-10 Chemical processing equipment for semiconductor wafers Expired - Fee Related JP2587304Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1993039585U JP2587304Y2 (en) 1993-06-10 1993-06-10 Chemical processing equipment for semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1993039585U JP2587304Y2 (en) 1993-06-10 1993-06-10 Chemical processing equipment for semiconductor wafers

Publications (2)

Publication Number Publication Date
JPH077140U JPH077140U (en) 1995-01-31
JP2587304Y2 true JP2587304Y2 (en) 1998-12-16

Family

ID=12557180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1993039585U Expired - Fee Related JP2587304Y2 (en) 1993-06-10 1993-06-10 Chemical processing equipment for semiconductor wafers

Country Status (1)

Country Link
JP (1) JP2587304Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005327856A (en) * 2004-05-13 2005-11-24 Komatsu Electronic Metals Co Ltd Etching apparatus for semiconductor wafer

Also Published As

Publication number Publication date
JPH077140U (en) 1995-01-31

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