JP2576602B2 - Reaction tube cleaning device - Google Patents
Reaction tube cleaning deviceInfo
- Publication number
- JP2576602B2 JP2576602B2 JP63222670A JP22267088A JP2576602B2 JP 2576602 B2 JP2576602 B2 JP 2576602B2 JP 63222670 A JP63222670 A JP 63222670A JP 22267088 A JP22267088 A JP 22267088A JP 2576602 B2 JP2576602 B2 JP 2576602B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- heat treatment
- cleaning
- liquid
- cleaned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Cleaning In General (AREA)
Description
【発明の詳細な説明】 〔概 要〕 半導体ウェーハ表面に多結晶シリコン膜、酸化シリコ
ン膜、窒化シリコン膜等を形成する際に、反応管の内壁
に付着した多結晶シリコン等の堆積物を洗浄する反応管
洗浄装置に関し、 半導体ウェーハ表面に多結晶シリコン膜等を形成する
際に半導体ウェーハを垂直にセットして反応管内部に載
置されて、多結晶シリコン膜、酸化シリコン膜等が表面
に付着した被洗浄物、例えば熱処理治具の洗浄をも可能
ならしめる反応管洗浄装置を供給することを目的とし、 反応管を垂直に拘持して、反応管を回転させる回転筒
と、反応管の開口を挿通し反応管内部を上下運動して、
横方向に液体と気体を噴射する噴射ノズルを有する反応
管洗浄装置において、回転筒の内壁に、被洗浄物を懸吊
可能とする支竿を植設すると共に、噴射ノズルより被洗
浄物に噴射され被洗浄物より落下する液体を受けて、反
応管内部を通して液体を落下させる漏斗状をした液受を
周設して構成する。DETAILED DESCRIPTION OF THE INVENTION [Outline] When depositing a polycrystalline silicon film, a silicon oxide film, a silicon nitride film, etc. on a semiconductor wafer surface, cleaning deposits such as polycrystalline silicon adhered to an inner wall of a reaction tube. When forming a polycrystalline silicon film on the surface of a semiconductor wafer, the semiconductor wafer is set vertically and placed inside the reaction tube, and the polycrystalline silicon film, silicon oxide film, etc. A rotating tube that rotates the reaction tube while holding the reaction tube vertically, with the object of supplying a reaction tube cleaning device that also enables the cleaning of attached objects to be cleaned, for example, heat treatment jigs; And move up and down inside the reaction tube through
In a reaction tube cleaning apparatus having an injection nozzle for injecting a liquid and a gas in a lateral direction, a support rod capable of suspending an object to be washed is planted on an inner wall of a rotary cylinder, and the object is injected from the injection nozzle to the object to be washed. A funnel-shaped liquid receiver for receiving the liquid falling from the object to be washed and dropping the liquid through the inside of the reaction tube is provided around.
半導体ウェーハ表面に多結晶シリコン膜等を形成する
さいに、反応管の内壁に付着した多結晶シリコン等の堆
積物を洗浄する反応管洗浄装置に関する。The present invention relates to a reaction tube cleaning apparatus for cleaning a deposit such as polycrystalline silicon adhered to an inner wall of a reaction tube when a polycrystalline silicon film or the like is formed on a semiconductor wafer surface.
半導体素子の製造工程には、半導体ウェーハ表面に多
結晶シリコン膜等を形成するための成膜工程がある。The semiconductor element manufacturing process includes a film forming process for forming a polycrystalline silicon film or the like on the surface of a semiconductor wafer.
多結晶シリコン膜等の成膜作業で使用する反応管の内
壁や熱処理治具の表面にも、多結晶シリコン膜等が同時
に付着する。The polycrystalline silicon film and the like are simultaneously attached to the inner wall of the reaction tube and the surface of the heat treatment jig used for the film forming operation of the polycrystalline silicon film and the like.
この成膜作業で繰り返して使用された反応管の内壁や
熱処理治具の表面には、多結晶シリコン膜等が厚く堆積
する。A thick polycrystalline silicon film or the like is deposited on the inner wall of the reaction tube or the surface of the heat treatment jig repeatedly used in this film forming operation.
このため、成膜作業中に表面に堆積した多結晶シリコ
ン膜等からの脱ガスが多くなる。Therefore, outgassing from the polycrystalline silicon film or the like deposited on the surface during the film forming operation increases.
この結果、半導体ウェーハ表面に形成された多結晶シ
リコン膜等の物理的特性等に悪影響することになる。As a result, the physical properties of the polycrystalline silicon film formed on the surface of the semiconductor wafer are adversely affected.
従って、5〜15回程度繰り返して成膜作業で使用され
た反応管や熱処理治具は洗浄して、内壁や表面に付着し
た多結晶シリコン膜等の堆積物を除去する必要がある。Therefore, it is necessary to wash the reaction tube and the heat treatment jig used in the film forming operation repeatedly about 5 to 15 times to remove deposits such as a polycrystalline silicon film adhered to the inner wall and the surface.
従来から広く使用されている反応管の洗浄方法は、反
応管を垂直にして反応管の円周方向に回転させて、この
反応管の内部を挿通して噴射ノズルを上下に往復させな
がら、噴射ノズルから反応管の内壁に弗硝酸や弗酸等の
溶液を噴射して多結晶シリコン膜等の堆積物を化学的に
溶解してから、洗浄液、例えば純水を噴射して反応管の
内壁に付着している弗硝酸や弗酸等の溶液を洗い流した
後、最後に気体、例えば窒素ガスを噴射して、反応管の
内壁に付着している純水を乾燥させるものであった。Conventionally, a widely used method of cleaning a reaction tube is to vertically rotate the reaction tube and rotate it in the circumferential direction of the reaction tube. A solution such as hydrofluoric acid or hydrofluoric acid is sprayed from the nozzle onto the inner wall of the reaction tube to chemically dissolve the deposits such as the polycrystalline silicon film, and then a cleaning liquid, for example, pure water is sprayed onto the inner wall of the reaction tube. After washing away the adhering solution of hydrofluoric acid, hydrofluoric acid or the like, finally, a gas, for example, nitrogen gas is injected to dry the pure water adhering to the inner wall of the reaction tube.
上記の従来の反応管の洗浄方法を第2図の従来の反応
管内壁の洗浄に使用される洗浄装置の部分側断面図に対
応させて説明する。The above-mentioned conventional method for cleaning a reaction tube will be described with reference to a partial side sectional view of a cleaning apparatus used for cleaning the inner wall of the conventional reaction tube shown in FIG.
1は反応管、2は回転筒、4は固定バンド、4aは支持
棒、5は噴射ノズル、6は供給管、Aは反応管1と回転
筒2の回転方向で、反応管1は図に示していない駆動装
置によりA方向に回転する回転筒3内部に植設した支持
棒4aの先端の固定バンド4により、回転筒2の略中心に
固定され、回転筒2の回転により回転されて上記したよ
うな洗浄法によって洗浄される。1 is a reaction tube, 2 is a rotation tube, 4 is a fixed band, 4a is a support rod, 5 is an injection nozzle, 6 is a supply tube, A is a rotation direction of the reaction tube 1 and the rotation tube 2, and the reaction tube 1 is shown in the figure. The drive unit (not shown) is fixed to substantially the center of the rotary cylinder 2 by a fixed band 4 at the tip of a support rod 4a implanted inside the rotary cylinder 3 that rotates in the direction A, and is rotated by the rotation of the rotary cylinder 2 to rotate. It is washed by the washing method described above.
一方、第3図は熱処理治具2を洗浄する従来の洗浄法
を示す工程順側断面図である。On the other hand, FIG. 3 is a sectional view in the order of steps showing a conventional cleaning method for cleaning the heat treatment jig 2.
(1)は熱処理治具2の表面の堆積物を化学的に溶解
する弗硝酸や弗酸等の溶液の入った浸漬槽7中に熱処理
治具2が浸漬された状態、 (2)は(1)の処理が完了して熱処理治具2の表面
に付着している溶液を洗浄する純水の入った浸漬槽7中
に熱処理治具2が浸漬された状態、 (3)は(1)と(2)の処理が終了して熱処理治具
2の表面に付着している純水を、エアーガン8により窒
素ガスを熱処理治具2に噴射して乾燥を行なっている状
態、 で示すような作業順序により熱処理治具2の洗浄は行
われていた。(1) is a state in which the heat treatment jig 2 is immersed in an immersion tank 7 containing a solution of hydrofluoric nitric acid, hydrofluoric acid, or the like that chemically dissolves deposits on the surface of the heat treatment jig 2; The state where the heat treatment jig 2 is immersed in the immersion tank 7 containing pure water for cleaning the solution adhering to the surface of the heat treatment jig 2 after the processing of 1) is completed. After the treatment of (2) is completed, the pure water adhering to the surface of the heat treatment jig 2 is dried by injecting nitrogen gas into the heat treatment jig 2 by the air gun 8 as shown in FIG. The cleaning of the heat treatment jig 2 was performed according to the operation sequence.
以上説明したように、反応管1と熱処理治具2の洗浄
装置は全く異なっていたために、洗浄装置への投資が重
複すること、設備費の高いクリーンルームの必要スペー
スが増加し、且つ熱処理治具2の洗浄は手先業で行って
いるために洗浄工数が増加する等により半導体素子の製
造コストを押し上げる要因にもなっていた。As described above, since the cleaning devices for the reaction tube 1 and the heat treatment jig 2 are completely different, investment in the cleaning device is duplicated, the space required for a clean room with high equipment costs is increased, and the heat treatment jig is increased. Since the cleaning of No. 2 is performed by a manual operation, the number of cleaning steps is increased, and this is also a factor that increases the manufacturing cost of the semiconductor element.
本発明は上記のような問題を解決するため、熱処理治
具2の洗浄を反応管1に用いる洗浄装置で行える反応管
洗浄装置の改良を目的とする。An object of the present invention is to improve a reaction tube cleaning apparatus capable of cleaning the heat treatment jig 2 by a cleaning apparatus used for the reaction tube 1 in order to solve the above problems.
上記の目的を達成するための本発明の構成を、本発明
の一実施例の部分側断面を示す第1図と従来の洗浄装置
の部分側断面を示す第2図により説明する。The structure of the present invention for achieving the above object will be described with reference to FIG. 1 showing a partial cross section of an embodiment of the present invention and FIG. 2 showing a partial cross section of a conventional cleaning apparatus.
本発明は第1図の従来の反応管の洗浄装置に、第2図
に示すように回転筒3の内壁に、被洗浄物2を懸吊可能
とする支竿12を植設すると共に、噴射ノズル5より被洗
浄物2に噴射され被洗浄物2より落下する液体を受け
て、反応管1内部を通して液体を落下させる漏斗状をし
た液受11を周設して構成する。According to the present invention, a supporting rod 12 capable of suspending an object to be cleaned 2 is implanted on the inner wall of a rotary cylinder 3 as shown in FIG. A funnel-shaped liquid receiver 11 that receives the liquid that is ejected from the nozzle 5 onto the object 2 and falls from the object 2 and drops the liquid through the inside of the reaction tube 1 is provided.
次に作用を第1図の本発明の一実施例の部分側断面図
により説明する。Next, the operation will be described with reference to the partial side sectional view of one embodiment of the present invention shown in FIG.
反応管1が回転筒13内部の略中心に固定バンド4と支
持棒4aを介して拘持されると共に、回転筒13内壁に植設
された支竿12が熱処理治具2を懸吊した状態である。The reaction tube 1 is held substantially at the center of the rotary cylinder 13 via the fixed band 4 and the support rod 4a, and the support rod 12 implanted on the inner wall of the rotary cylinder 13 suspends the heat treatment jig 2. It is.
かかる状態において、図に示していない駆動装置によ
って回転筒13がB方向に回転すると反応管1と熱処理治
具2もB方向に回転する。In this state, when the rotary cylinder 13 rotates in the B direction by a driving device (not shown), the reaction tube 1 and the heat treatment jig 2 also rotate in the B direction.
次ぎに、示してない制御装置によって、噴射ノズル5
が回転筒2の開口を挿通して回転筒2の略中心を上下運
動しながら、逐次的に弗硝酸や弗酸等の溶液,純水,窒
素ガスを支竿12に懸吊された熱処理治具2の表面と反応
管1の内壁に噴射するようにすることで反応管洗浄装置
で熱処理治具2の洗浄が可能となる。Next, the injection nozzle 5 is controlled by a control device (not shown).
Heat treatment in which a solution of hydrofluoric nitric acid, hydrofluoric acid, etc., pure water and nitrogen gas are sequentially suspended from the support rod 12 while vertically moving through the opening of the rotary cylinder 2 and substantially at the center of the rotary cylinder 2. The heat treatment jig 2 can be cleaned by the reaction tube cleaning device by spraying the liquid onto the surface of the tool 2 and the inner wall of the reaction tube 1.
次に第1図の本発明の一実施例を説明する。 Next, an embodiment of the present invention shown in FIG. 1 will be described.
第1図は本発明による半導体治具洗浄装置の部分側断
面図で、第2図の従来の反応管洗浄装置に、回転筒13は
従来の反応管洗浄装置の回転筒3の上部内壁に、熱処理
治具2を懸吊する支竿12植設すると共に、噴射ノズルか
ら熱処理治具2に噴射された液体を受けて、反応管1の
内部を通して液体を落下させる漏斗状をした液受11を周
設したしたものである。FIG. 1 is a partial side sectional view of a semiconductor jig cleaning apparatus according to the present invention. In the conventional reaction tube cleaning apparatus shown in FIG. 2, a rotating cylinder 13 is provided on the upper inner wall of a rotating cylinder 3 of the conventional reaction tube cleaning apparatus. A support rod 12 for suspending the heat treatment jig 2 is implanted, and a funnel-shaped liquid receiver 11 for receiving the liquid jetted from the injection nozzle to the heat treatment jig 2 and dropping the liquid through the inside of the reaction tube 1. It has been set around.
〔発明の効果〕 以上の説明から明らかなように、本発明による反応管
洗浄装置は、熱処理治具の洗浄が可能となると共に反応
管と同時に洗浄もできることになることにより、洗浄装
置への重複投資が回避できること、設備費の高いクリー
ンルームの必要スペースを削減できること、且つ熱処理
治具2の洗浄が自動化できることとなり洗浄工数が削減
される等により半導体素子の製造コストの引き下げに寄
与させることが可能となる。[Effects of the Invention] As is apparent from the above description, the reaction tube cleaning apparatus according to the present invention can clean the heat treatment jig and simultaneously clean the reaction tube. It is possible to avoid investment, reduce the required space of a clean room with high equipment costs, and automate the cleaning of the heat treatment jig 2, thereby reducing the number of cleaning steps, thereby contributing to a reduction in the manufacturing cost of semiconductor devices. Become.
第1図は本発明の一実施例の部分側断面図、 第2図は従来の反応管洗浄装置の部分側断面図 第3図はは従来の熱処理治具洗浄法を示す工程順側断面
図を示す。 図において 1は反応管、 2は熱処理治具、 3,13は回転台、 4は固定バンド、 4aは支持棒、 6は供給管、 11は液受 12は支竿 Aは反応管と熱処理治具と回転筒の回転方向、 Bはノズルの運動方向を示す。FIG. 1 is a partial side sectional view of one embodiment of the present invention, FIG. 2 is a partial side sectional view of a conventional reaction tube cleaning apparatus, and FIG. 3 is a process side sectional view showing a conventional heat treatment jig cleaning method. Is shown. In the figure, 1 is a reaction tube, 2 is a heat treatment jig, 3 and 13 are turntables, 4 is a fixed band, 4a is a support rod, 6 is a supply tube, 11 is a liquid receiver, 12 is a support rod, and A is a reaction tube and a heat treatment jig. B indicates the direction of rotation of the tool and the rotary cylinder, and B indicates the direction of movement of the nozzle.
Claims (1)
材料よりなる円筒状の反応管を垂直に拘持して、反応管
を回転させる回転筒と、反応管の開口を挿通し反応管内
部を上下運動して、横方向に液体と気体を噴射する噴射
ノズルを有する反応管洗浄装置において、 上記回転筒(3)の内壁に、被洗浄物(2)を懸吊可能
とする支竿(12)を植設すると共に、噴射ノズル(5)
より該被洗浄物(2)に噴射され該被洗浄物(2)より
落下する液体を受けて、反応管(1)内部を通して液体
を落下させる漏斗状をした液受(11)を周設して、反応
管(1)と被洗浄物(2)の洗浄を可能にしたことを特
徴とする反応管洗浄装置。The present invention is characterized in that a cylindrical reaction tube made of a heat-resistant material used in a heat treatment process for a semiconductor wafer is vertically held, and a rotating tube for rotating the reaction tube and an opening of the reaction tube are inserted to vertically move the inside of the reaction tube. A reaction tube cleaning apparatus having an injection nozzle for injecting a liquid and a gas in a lateral direction by moving, wherein a support rod (12) capable of suspending an object to be cleaned (2) on an inner wall of the rotary cylinder (3). And spray nozzle (5)
A funnel-shaped liquid receiver (11) for receiving the liquid sprayed onto the object to be cleaned (2) and falling from the object to be cleaned (2) and dropping the liquid through the inside of the reaction tube (1) is provided. A reaction tube cleaning apparatus characterized in that the reaction tube (1) and the object to be cleaned (2) can be washed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63222670A JP2576602B2 (en) | 1988-09-05 | 1988-09-05 | Reaction tube cleaning device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63222670A JP2576602B2 (en) | 1988-09-05 | 1988-09-05 | Reaction tube cleaning device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0271888A JPH0271888A (en) | 1990-03-12 |
JP2576602B2 true JP2576602B2 (en) | 1997-01-29 |
Family
ID=16786088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63222670A Expired - Lifetime JP2576602B2 (en) | 1988-09-05 | 1988-09-05 | Reaction tube cleaning device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2576602B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2549747B2 (en) * | 1990-06-01 | 1996-10-30 | 東芝セラミックス株式会社 | Silicon wafer support boat |
CN114772919B (en) * | 2022-04-13 | 2023-08-18 | 浙江富通光纤技术有限公司 | Processing technology of prefabricated rod |
-
1988
- 1988-09-05 JP JP63222670A patent/JP2576602B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0271888A (en) | 1990-03-12 |
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