JP2549747B2 - Silicon wafer support boat - Google Patents
Silicon wafer support boatInfo
- Publication number
- JP2549747B2 JP2549747B2 JP2141534A JP14153490A JP2549747B2 JP 2549747 B2 JP2549747 B2 JP 2549747B2 JP 2141534 A JP2141534 A JP 2141534A JP 14153490 A JP14153490 A JP 14153490A JP 2549747 B2 JP2549747 B2 JP 2549747B2
- Authority
- JP
- Japan
- Prior art keywords
- holding
- wafer
- boat
- wafer support
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明はシリコン製ウエハ支持ボートに関し、少なく
とも半導体ウェハを支持する保持ロッドの溝部分を少な
くとも化学液により処理したシリコン製ウエハ支持ボー
トに関わる。Description: TECHNICAL FIELD The present invention relates to a silicon wafer support boat, and more particularly to a silicon wafer support boat in which at least a groove portion of a holding rod for supporting a semiconductor wafer is treated with a chemical solution.
［従来の技術と課題］ 周知の如く、半導体デバイスの高集積化、高性能化が
進むにつれて高温熱処理に使用可能で、かつ高純度であ
るウエハ支持ボートの要求が高まっている。これに伴
い、特に炉内温度の均熱性に優れ、高集積・高性能デバ
イスの製造に適している縦型炉が使用されている。[Prior Art and Problems] As is well known, as semiconductor devices become more highly integrated and have higher performance, there is an increasing demand for wafer support boats that can be used for high temperature heat treatment and have high purity. Along with this, a vertical furnace that is particularly suitable for manufacturing highly integrated and high-performance devices has been used, which is excellent in soaking temperature of the furnace.
従来、ウエハ支持ボート（組立式支持具）としては、
特開昭60−107843号公報が知られている。このボート
は、２個の端板、複数の保持ロッド及び案内ロッドから
なるもので、各部材の材質として石英やシリコンを用い
た構成となっている。Conventionally, as a wafer support boat (assembly type support tool),
JP-A-60-107843 is known. This boat is composed of two end plates, a plurality of holding rods and a guide rod, and is made of quartz or silicon as the material of each member.
しかしながら、従来のウエハ支持ボートによれば、保
持ロッドの保持溝、案内ロッドの案内溝は棒状のシリコ
ン結晶部材を切断，研削等の加工を施すことにより製造
されているため、保持溝及び案内溝に破砕層が残存す
る。従って、半導体ウエハをこれらの溝に移動する際、
ウエハが前記破砕層とこすれてダストが発生したり、ウ
エハに損傷を与えて、ウエハの転位欠陥発生の原因とな
る。However, according to the conventional wafer support boat, the holding groove of the holding rod and the guide groove of the guide rod are manufactured by subjecting the rod-shaped silicon crystal member to processing such as cutting and grinding. A crushed layer remains on the surface. Therefore, when moving the semiconductor wafer into these grooves,
The wafer may rub against the crushed layer to generate dust or damage the wafer, causing dislocation defects in the wafer.
本発明は上記事情に鑑みてなされたもので、少なくと
も保持溝部分をエッチング液により処理することによ
り、溝部分の破砕層を除去して、ダストの発生やウエハ
の損傷を抑制し、もってウエハの転位欠陥発生を著しく
減少できるウエハ支持ボートを提供することを目的とす
る。The present invention has been made in view of the above circumstances, and by treating at least the holding groove portion with an etching solution, the crushed layer in the groove portion is removed, and the generation of dust and the damage to the wafer are suppressed. An object of the present invention is to provide a wafer support boat capable of significantly reducing the occurrence of dislocation defects.
［課題を解決するための手段］ 本発明は、半導体ウエハを保持する、複数の保持溝を
有する保持ロッドと、これを固定するための少なくとも
２つの固定板とを具備し、少なくとも前記保持溝の露出
面が光沢度10以上にエッチング処理されていることを特
徴とするシリコン製ウエハ支持ボートである。[Means for Solving the Problems] The present invention comprises a holding rod having a plurality of holding grooves for holding a semiconductor wafer, and at least two fixing plates for fixing the holding rod. A silicon wafer support boat characterized in that the exposed surface is etched to a glossiness of 10 or more.
本発明において、上記ウエハ支持ボートの表面光沢度
はエッチング処理により１以上の値となり、本発明の効
果を奏する。より好ましくは、光沢度が10以上であると
よい。In the present invention, the surface gloss of the wafer support boat becomes a value of 1 or more by the etching treatment, and the effect of the present invention is obtained. More preferably, the glossiness is 10 or more.
また、ウエハ支持ボートの材質としては、多結晶シリ
コン及び単結晶シリコン等が挙げられる。本発明は、い
ずれにも適応可能とするものであるが、好ましくは単結
晶シリコンである。更に好ましくは、含有酸素濃度が２
×1017〜２×1018atoms/cm3である単結晶シリコンであ
る。その理由は、濃度が２×1018atoms/cm3を越えると
ウェハ支持ボートに結晶欠陥，スリップが入り易く、逆
に２×1017atoms/cm3未満の場合本発明効果が得られな
いからであり、この効果と本発明の効果の相乗効果によ
りより耐用寿命の長いウエハ支持ボートが得られるから
である。Further, examples of the material of the wafer support boat include polycrystalline silicon and single crystal silicon. The present invention can be applied to any of them, but single crystal silicon is preferable. More preferably, the oxygen content is 2
It is single crystal silicon having a concentration of × 10 17 to 2 × 10 18 atoms / cm 3 . The reason is that when the concentration exceeds 2 × 10 18 atoms / cm 3 , crystal defects and slips are likely to occur in the wafer support boat, and conversely, when the concentration is less than 2 × 10 17 atoms / cm 3, the effect of the present invention cannot be obtained. This is because the wafer supporting boat having a longer service life can be obtained by the synergistic effect of this effect and the effect of the present invention.
本発明において、エッチング液としては、例えばNaOH
＋H2O液、NH3＋H2O液、HF＋HNO3液等が挙げられる。In the present invention, as the etching solution, for example, NaOH
+ H 2 O solution, NH 3 + H 2 O solution, HF + HNO 3 solution and the like can be mentioned.
本発明において、エッチング液によるエッチング速度
は、ウエハの結晶方位、伝導形、ドーピングされている
不純物元素、格子欠陥、及び結晶の表面構造によって左
右され、適宜選択して定める。In the present invention, the etching rate by the etching solution depends on the crystal orientation of the wafer, the conduction type, the doped impurity element, the lattice defect, and the surface structure of the crystal, and is appropriately selected and determined.
［作用］ 本発明によれば、少なくとも保持ロッドの保持溝部分
がエッチング液により処理されているため、従来のよう
に溝部分に破砕層が残存する事なく、実質上その表面に
おいて１以上の光沢度となり、ダストの発生やウエハの
損傷を抑制し、もってウエハの転位欠陥発生を著しく減
少できる。特に、10以上の光沢度とすることにより、上
記効果は一層顕著となる。[Operation] According to the present invention, since at least the holding groove portion of the holding rod is treated with the etching solution, a crushed layer does not remain in the groove portion as in the conventional case, and substantially one or more luster is present on the surface thereof. The generation of dust and the damage to the wafer can be suppressed, and the occurrence of dislocation defects on the wafer can be significantly reduced. In particular, when the glossiness is 10 or more, the above effect becomes more remarkable.
［実施例及び比較例］ 以下、本発明の実施例に係る縦型ボートを第１図〜第
３図を参照して説明する。ここで、第１図は縦型ボート
の全体図、第２図は第１図の略平面図、第３図は第１図
のボートに用いられる保持ロッドの説明図である。Examples and Comparative Examples Hereinafter, vertical boats according to examples of the present invention will be described with reference to FIGS. 1 to 3. Here, FIG. 1 is an overall view of a vertical boat, FIG. 2 is a schematic plan view of FIG. 1, and FIG. 3 is an explanatory view of a holding rod used in the boat of FIG.
図中の1a,1bは、互いに平行に配置された円形の固定
板である。これらの固定板には、夫々例えば４本の保持
ロッド２の両端部を装着するための開口部３が平板の外
周部に沿って設けられている。前記保持ロッド２は例え
ばCZ法により形成された単結晶シリコンからなる。1a and 1b in the figure are circular fixing plates arranged in parallel with each other. Each of these fixing plates is provided with an opening 3 for mounting the both ends of, for example, four holding rods 2 along the outer periphery of the flat plate. The holding rod 2 is made of, for example, single crystal silicon formed by the CZ method.
前記保持ロッド２の両端には、該ロッドをコ字型の止
めピン４を用いて前記固定板に固定するための環状の溝
５が設けられている。前記保持ロッド２の長手方向に
は、夫々等間隔で半導体ウエハ６の周縁部を係止する保
持溝７が設けられている。ここで、前記保持溝７の露出
面は、例えばHF＋HNO3液によりエッチング処理され、こ
れにより溝付近の破砕層は除去されている。At both ends of the holding rod 2, there are provided annular grooves 5 for fixing the rod to the fixing plate by using U-shaped retaining pins 4. In the longitudinal direction of the holding rod 2, holding grooves 7 for locking the peripheral edge of the semiconductor wafer 6 are provided at equal intervals. Here, the exposed surface of the holding groove 7 is etched by, for example, HF + HNO 3 solution, whereby the crushed layer near the groove is removed.
上記実施例に係る縦型ボートは、固定板1a,1bと、こ
れらの固定板に両端が固定される単結晶シリコンからな
る保持ロッド２とを有し、かつ保持ロッド２の保持溝７
の露出面がHF＋HNO3液によりエッチング処理された構成
となっているため、従来のように溝部分に破砕層が残存
する事なく、ダストの発生やウエハの損傷を抑制し、も
ってウエハの転位欠陥発生を著しく減少できる。実際、
HF＋HNO3液の濃度及びエッチング処理時間を調整し、少
なくとも溝部分が光沢度３（比較例）、光沢度10（実施
例１）及び光沢度15（実施例２）となる縦型ボートを形
成した。ここで、光沢度は、スガ試験機（株）製UGV−5
D光沢度測定器を用い、測定角度20度によって測定し
た。The vertical boat according to the above embodiment has the fixing plates 1a and 1b and the holding rods 2 made of single crystal silicon whose both ends are fixed to the fixing plates, and the holding groove 7 of the holding rod 2 is provided.
Since the exposed surface of the wafer is etched with HF + HNO 3 solution, there is no crushed layer left in the groove unlike in the past, and dust generation and wafer damage are suppressed, thus dislocation defects on the wafer. The occurrence can be significantly reduced. In fact
By adjusting the concentration of the HF + HNO 3 solution and the etching treatment time, a vertical boat having a glossiness of 3 (comparative example), a glossiness of 10 (example 1) and a glossiness of 15 (example 2) at least in the groove portion was formed. . Here, the glossiness is UGV-5 manufactured by Suga Test Instruments Co., Ltd.
The measurement was performed at a measurement angle of 20 degrees using a D glossiness measuring instrument.
事実、エッチング処理しない同上測定法による光沢度
が0.5であった従来の縦型ボート及び本発明に係る縦型
ボートに、半導体ウエハを搬送し、熱処理後のウエハの
ダスト，転位欠陥について調べたところ、下記第１表に
示す結果が得られた。但し、熱処理条件は、900℃に保
持した炉内に（エレベータ速度200mm/分で）ボートを入
れ、炉内で10℃／分で1200℃まで昇温し、この温度で１
時間,100枚のウエハをドライ酸化し、更に炉内を５℃／
分で900℃まで降温した後、炉内から（エレベータ速度2
00mm/分で）取り出すものとする。In fact, when the semiconductor wafer was transferred to the conventional vertical boat and the vertical boat according to the present invention which had a glossiness of 0.5 according to the same measurement method without etching, the wafer was examined for dust and dislocation defects after heat treatment. The results shown in Table 1 below were obtained. However, the heat treatment conditions are as follows: put the boat in a furnace maintained at 900 ° C (at an elevator speed of 200 mm / min), raise the temperature to 1200 ° C at 10 ° C / min in the furnace, and
Dry oxidation of 100 wafers for 5 hours /
After cooling to 900 ° C in minutes, from inside the furnace (elevator speed 2
It shall be taken out (at 00 mm / min).
但し、第１表でダストは0.16μｍ以上のものの平均値
を、転位欠陥のＰは個数を夫々示す。また、上記転位欠
陥とはボート溝のウエハ接触部に発生したスリップを示
す。 However, in Table 1, dust shows an average value of 0.16 μm or more, and P of dislocation defects shows the number. Further, the above-mentioned dislocation defect means a slip generated at the wafer contact portion of the boat groove.
なお、上記実施例においては、保持ロッドの保持溝の
露出面がエッチング処理されている場合について述べた
が、保持ロッドの固定板との嵌合部の加工精度を重視し
ない場合は保持ロッド全体をエッチングしてもよい。In the above embodiment, the case where the exposed surface of the holding groove of the holding rod is etched is described, but if the processing accuracy of the fitting portion of the holding rod with the fixing plate is not important, the whole holding rod is You may etch.
［発明の効果］ 以上詳述した如く本発明によれば、少なくとも保持ロ
ッドの保持溝部分がエッチング液により処理することに
より、溝部分の破砕層を除去して、ダストの発生やウエ
ハの損傷を抑制し、更に加工の際表面に付着した金属汚
染を除去でき、もってウエハの転位欠陥発生を著しく減
少できる信頼性の高いウエハ支持ボートを提供できる。[Effects of the Invention] As described in detail above, according to the present invention, at least the holding groove portion of the holding rod is treated with the etching liquid to remove the crushed layer in the groove portion, thereby preventing generation of dust and damage to the wafer. It is possible to provide a highly reliable wafer support boat which can suppress the metal contamination attached to the surface during processing and can significantly reduce the occurrence of dislocation defects on the wafer.
第１図は本発明の一実施例に係る縦型ボートの全体図、
第２図は第１図の略平面図、第３図は第１図のボートに
用いられる保持ロッドの説明図である。 1a,1b…固定板、２…保持ロッド、３…開口部、４…止
めピン、５…保持溝。FIG. 1 is an overall view of a vertical boat according to an embodiment of the present invention,
2 is a schematic plan view of FIG. 1, and FIG. 3 is an explanatory view of a holding rod used in the boat of FIG. 1a, 1b ... fixing plate, 2 ... holding rod, 3 ... opening, 4 ... stop pin, 5 ... holding groove.
Claims (1)
有する保持ロッドと、これを固定するための少なくとも
２つの固定板とを具備し、少なくとも前記保持溝の露出
面が光沢度10以上にエッチング処理されていることを特
徴とするシリコン製ウェハ支持ボート。1. A holding rod having a plurality of holding grooves for holding a semiconductor wafer, and at least two fixing plates for fixing the holding rod, wherein at least an exposed surface of the holding groove has a glossiness of 10 or more. A silicon wafer support boat characterized by being etched.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2141534A JP2549747B2 (en) | 1990-06-01 | 1990-06-01 | Silicon wafer support boat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2141534A JP2549747B2 (en) | 1990-06-01 | 1990-06-01 | Silicon wafer support boat |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0437028A JPH0437028A (en) | 1992-02-07 |
| JP2549747B2 true JP2549747B2 (en) | 1996-10-30 |
Family
ID=15294206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2141534A Expired - Fee Related JP2549747B2 (en) | 1990-06-01 | 1990-06-01 | Silicon wafer support boat |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2549747B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5849391A (en) * | 1994-08-26 | 1998-12-15 | Nippondenco Co., Ltd. | Cordierite honeycomb structure and process for producing the same |
| KR970030282A (en) * | 1995-11-28 | 1997-06-26 | 김광호 | Ceramic spacers of plasma C, V, D devices |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60107843A (en) * | 1983-11-16 | 1985-06-13 | Tekunisuko:Kk | Assembly type supporter |
| JP2773078B2 (en) * | 1988-03-11 | 1998-07-09 | 東京エレクトロン株式会社 | Processing apparatus and cleaning method thereof |
| JP2576602B2 (en) * | 1988-09-05 | 1997-01-29 | 富士通株式会社 | Reaction tube cleaning device |
| JPH02102142A (en) * | 1988-10-07 | 1990-04-13 | Sony Corp | Regeneration of jig made of quartz |
-
1990
- 1990-06-01 JP JP2141534A patent/JP2549747B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0437028A (en) | 1992-02-07 |
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