CN209551448U - The processing unit of wafer, chemical-mechanical polishing system - Google Patents

Abstract

The utility model discloses a kind of processing units of wafer, chemical-mechanical polishing system.The processing unit of wafer includes: driving assembly and processing component, the driving component drive the wafer while rotation processing component around the axis oscillating perpendicular to the crystal column surface to spray fluid to the crystal column surface.According to the processing unit of the utility model embodiment when handling wafer, damage wafer, high treating effect can be prevented.

Description

The processing unit of wafer, chemical-mechanical polishing system

Technical field

The utility model belongs to semiconductor process technique field, more particularly, to a kind of processing unit of wafer, wafer Chemical-mechanical polishing system.

Background technique

Chemical-mechanical polishing system in the related technology can more or less produce wafer in the mode cleaned to wafer Raw abrasion or damage, and it is easy to be poor to wafer generation secondary pollution cleaning effect, therefore have much room for improvement.

Utility model content

The utility model aims to solve at least one of the technical problems existing in the prior art.For this purpose, the utility model mentions A kind of processing unit of wafer out, the processing unit can prevent damage wafer, treatment effect when handling wafer It is good.

The utility model also proposes a kind of chemical-mechanical polishing system of processing unit with the wafer.

According to the processing unit of the wafer of the utility model first aspect embodiment, comprising: driving assembly and processing group Part, the driving component drive processing component while wafer rotation to put around the axis perpendicular to the crystal column surface It moves to spray fluid to the crystal column surface.

Processing group is utilized during rotating wafer according to the processing unit of the wafer of the utility model embodiment Part carries out injection fluid towards crystal column surface, so as to avoid processing component and wafer contacts, greatly reduces wafer in this way A possibility that being damaged during processed, so largely, plays the role of protection to wafer.In addition, When due to spraying fluid towards wafer, wafer is in the state of rotation always, be ejected into this way fluid on crystal column surface from The surface for the slave wafer being more easier under the action of mental and physical efforts is flowed through or is thrown away, so as to improve the treatment effect of wafer.

One embodiment according to the present utility model, the fluid include the liquid and/or use for cleaning the wafer In the gas of the drying wafer.

One embodiment according to the present utility model, the axis are located at the wafer periphery.

At least one nozzle is fixedly installed in one embodiment according to the present utility model, the processing component at its end, The outlet of the nozzle is away from the 5~30mm of wafer.

One embodiment according to the present utility model, the processing unit of the wafer, which is characterized in that further include: shell, Working chamber is limited in the shell, the processing component is located in the working chamber and can swing in vertical plane, the drive Dynamic component is for driving the wafer to rotate in vertical plane；Driving structure, the driving structure is for driving the cleaning group Part is swung.

One embodiment according to the present utility model, the driving structure include connecting shaft, the connecting shaft horizontal extension And can be located in the working chamber to rotation around its axis, the processing component includes: cleaning rod, and the cleaning rod is connected to institute It states the free end of connecting shaft and extends in the plane vertical with the connecting shaft；Conduit, the conduit are located at the cleaning rod Above and towards the wafer it can spray the fluid.

One embodiment according to the present utility model, the conduit include: the first conduit, and first conduit is equipped with million Sound spray head；The free end of second conduit, second conduit is equipped with the nozzle.

One embodiment according to the present utility model, the nozzle are constructed such that the fluid sprayed towards the wafer is in Cone shape or sector.

One embodiment according to the present utility model, in the installation space limited in the cleaning rod, described first is led Pipe and second conduit are each provided in the installation space.

One embodiment according to the present utility model, first conduit include: the first pipeline section and the second pipeline section, and described Two pipeline sections are connected to the free end of first pipeline section through million generating devices, and at least part of second pipeline section stretches out institute State cleaning rod.

One embodiment according to the present utility model, at least part of first conduit are quartz pipe.

One embodiment according to the present utility model, the driving component include: rotation disk body, the rotation disk body and institute The shape for stating wafer is identical, and can rotate in vertical plane；Retaining piece, retaining piece be located at it is described rotation disk body edge for pair The wafer is fixed.

One embodiment according to the present utility model, the processing unit of the wafer further include cleaning assembly, the cleaning Component and the processing component are respectively provided at the opposite two sides of the wafer, and the cleaning assembly is configured to can be towards described Wafer ejecting fluid.

One embodiment according to the present utility model, the shell include: vertical plate, and the vertical plate extends along vertical, described Driving assembly is connected on the vertical plate by driving part, and the cleaning assembly can pass through the vertical plate and spray towards the wafer Fluid out；Cover board, the cover board are located at the top of the vertical plate along horizontal extension, the cover board；Bottom plate, the bottom plate is along horizontal Extend, the bottom plate is located at the bottom of the vertical plate；Side plate, the top and bottom of the side plate respectively with the cover board and described Bottom plate is connected, and a side of the side plate is connected with the vertical plate.

According to the chemical-mechanical polishing system of the wafer of the utility model second aspect embodiment, including polishing unit, institute Stating polishing unit includes multiple polishing modules for being polished to the wafer, and multiple polishing modules are arranged side by side； According to processing unit described in the utility model first aspect.

According to the chemical-mechanical polishing system of the wafer of the utility model embodiment, by the way that above-mentioned post-processing list is arranged Member, so as to improve whole wafer chemical-mechanical polishing system the cleaning effect to wafer, avoid to wafer generate damage It is bad.

The additional aspect and advantage of the utility model will be set forth in part in the description, partially will be from following description In become obvious, or recognized by the practice of the utility model.

Detailed description of the invention

The above-mentioned and/or additional aspect and advantage of the utility model from the description of the embodiment in conjunction with the following figures will Become obvious and be readily appreciated that, in which:

Fig. 1 is the structural schematic diagram according to the processing unit of the utility model one embodiment；

Fig. 2 is the structural schematic diagram according to the processing component of processing unit in the utility model embodiment；

Fig. 3 is the structural schematic diagram of another angle of processing unit shown in FIG. 1；

Fig. 4 is the structural schematic diagram according to the brush device of the utility model embodiment；

Fig. 5 is the structural schematic diagram according to the post-processing unit of the utility model one embodiment；

Fig. 6 is the structural schematic diagram according to the post-processing unit of second embodiment of the utility model；

Fig. 7 is the structural schematic diagram according to the post-processing unit of the utility model third embodiment；

Fig. 8 is the structural schematic diagram according to the post-processing unit of the 4th embodiment of the utility model；

Fig. 9 is the structural schematic diagram according to the chemical-mechanical polishing system of the wafer of the utility model embodiment.

Appended drawing reference:

Chemical-mechanical polishing system 100；

Front end unit 10；

Polish unit 20；Polish module 21；First polishing module 21a；Second polishing module 21b；Third polishes module 21c；4th polishing module 21d；

Post-processing unit 30；

Processing unit 31；First processing unit 31a；Second processing device 31b；Third processing unit 31c；

Processing component 311；Cleaning rod 3111；Installation space 3112；Conduit 3113；First conduit 3114；First pipeline section 3115；Second pipeline section 3116；Million sound spray heads 3117；Second conduit 3118；Nozzle 3119；

Shell 312；Vertical plate 3121；Cover board 3122；Bottom plate 3123；Side plate 3124；

Driving assembly 313；Rotate disk body 3131；Retaining piece 3132；

Driving structure 314；Connecting shaft 314a；

Cleaning assembly 315；

Drying device 32；Fixed frame 33；Cleaning manipulator 34；

Brush device 35；Mounting shell 351；Round brush 352；Million acoustic devices 36；

First turnover mechanism 40；Transfer manipulator 50；Second turnover mechanism 60；

Wafer 200.

Specific embodiment

The embodiments of the present invention are described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng The embodiment for examining attached drawing description is exemplary, and is only used for explaining the utility model, and should not be understood as to the utility model Limitation.

Below with reference to FIG. 1 to FIG. 9 description according to the processing unit 31 of the wafer of the utility model first aspect embodiment.Root Processing unit 31 according to the wafer of the utility model embodiment includes: driving assembly 313 and processing component 311, driving assembly 313 processing components 311 while drive wafers 200 to rotate are around the axis oscillating perpendicular to 200 surface of wafer with to 200 table of wafer Spray fluid in face.

It needs exist for explaining, wafer 200 can be in arbitrary plane internal rotation, such as wafer 200 can be in level It is rotated in face, wafer 200 can be that horizontal plane has rotation in the clinoplain of angle, specifically, wafer 200 can be Rotation in perpendicular.

Processing component 311 around the axis oscillating perpendicular to 200 surface of wafer with to 200 surface of wafer spray fluid, thus Processing component 311 can be that the parallel surface in 200 surface of wafer is swung, can be towards wafer 200 during swing Fluid is sprayed, and then wafer 200 is handled.

According to the processing unit 31 of the wafer 200 of the utility model embodiment, during rotating wafer 200, benefit Injection fluid is carried out towards 200 surface of wafer with processing component 311, so as to avoid processing component 311 from connecing with wafer 200 Touching greatly reduces a possibility that wafer 200 is damaged during processed in this way, so largely, right Wafer 200 plays the role of protection.It, will not be because of consumption and due to not needing to contact using other elements with wafer 200 It is dirty after material to service life, thus 200 surface of secondary pollution wafer, therefore, 31 pairs of crystalline substances of the processing unit in the present embodiment The cleaning effect on 200 surfaces of circle is more preferable.

Further, since when spraying fluid towards wafer 200, state of the wafer 200 always in rotation is ejected into crystalline substance in this way The surface for the slave wafer 200 that fluid on 200 surfaces of circle is more easier under the influence of centrifugal force is flowed through or is thrown away, so as to Improve the treatment effect of wafer 200.

In some embodiments of the utility model, fluid includes for the liquid of cleaning wafer 200 and/or for drying The gas of wafer 200.Specifically, fluid can only include liquid, and such processing component 311 sprays liquid, it is possible thereby to utilize Processing unit 31 cleans wafer 200；Fluid can only include gas, and such processing component 311 sprays gas, thus may be used Wafer 200 to be dried using processing unit 31；Fluid can include liquid, and including gas, handle in this way Component 311 can spray liquids and gases, thus can be cleaned using processing unit 31 to wafer 200, can also be right Wafer 200 is dried.

In some embodiments of the utility model, axis is located at 200 periphery of wafer.Thus, it is possible to be processing group The swing of part 311, the rotation with wafer 200 are independent of each other, and do not generate interference mutually, and the structure of product is more reasonable and compact.

At least one nozzle is fixedly installed in processing component at its end, and the outlet of nozzle is away from wafer 5mm~30mm.Thus may be used It will not be contacted during to guarantee the rotation of wafer 200 with nozzle, and then prevent wafer 200 during cleaning or drying It is damaged.

As shown in Figure 1-Figure 3, it is described below in detail and is filled according to the processing of the wafer of the utility model first aspect embodiment Set 31.According to the processing unit 31 of the wafer of the utility model embodiment further include: shell 312 and driving structure 314.

Working chamber is limited in shell 312, shell 312 is configured to the external protective structures of processing unit 31, and shell 312 will The other structures of processing unit 31 limit in working chamber inside it, to carry out effective protection to other structures.

In some embodiments of the utility model, as depicted in figs. 1 and 2, shell 312 includes vertical plate 3121, cover board 3122, bottom plate 3123 and side plate 3124, vertical plate 3121 extend along vertical, and cover board 3122 is located at vertical along horizontal extension, cover board 3122 The top of plate 3121, for bottom plate 3123 along horizontal extension, bottom plate 3123 is located at the bottom of vertical plate 3121, the top and bottom of side plate 3124 Portion is connected with cover board 3122 and bottom plate 3123 respectively, and a side of side plate 3124 is connected with vertical plate 3121.Side plate 3124 can edge Vertical direction extends.Wherein, working chamber is limited jointly by vertical plate 3121, cover board 3122, bottom plate 3123 and side plate 3124.At this In one example of utility model, at least two side walls of working chamber are unlimited, and be can be convenient wafer 200 in this way and are filled in processing It sets and is transmitted inside and outside 31.

Certain the utility model is not limited to this, and working chamber can also be enclosed construction, such as can set on shell 312 There is the door that can be opened and closed working chamber, when needing to transmit wafer 200, goalkeeper's wafer 200 can be opened and be put into or take out work Make chamber, when not needing transmission wafer 200, door can be closed, so that working chamber opposite outer space is enclosed construction.

As shown in Figure 1, driving assembly 313 is for driving wafer 200 vertical in some embodiments of the utility model It is rotated in face, optionally, wafer 200 is immobilizated on driving assembly 313, and driving assembly 313 drives wafer 200 during rotating It is rotated in vertical plane.

Optionally, driving assembly 313 includes rotation disk body 3131 and retaining piece 3132, rotates disk body 3131 and wafer 200 Shape it is identical, and can be rotated in vertical plane, the edge that retaining piece 3132 is located at rotation disk body 3131 be used for wafer 200 into Row is fixed.Optionally, rotation disk body 3131 can carry out driving rotation by driving part, such as can be motor, driving group Part 313 can be connected on vertical plate 3121 by driving part, it is possible thereby to facilitate the installation of driving assembly 313.Retaining piece 3132 there is fixed position and releasing position wafer 200 can be placed on corresponding position when needing fixed wafer 200, So that retaining piece 3132 is moved to fixed position, when needing to transmit wafer 200 to other modules, retaining piece 3132 can be made to transport It moves to releasing position, removes wafer 200 from driving assembly 313 to facilitate.Retaining piece 3132 can be multiple, Duo Gegu Gripping member 3132 is spaced apart setting on the circumferencial direction of rotation disk body 3131, it is possible thereby to make wafer 200 on driving assembly 313 Fixed more stable, uniform force will not generate damage to wafer 200.

As shown in Figure 1, driving structure 314 include connecting shaft 314a, connecting shaft 314a horizontal extension and around its axis can from It is located in working chamber with turning, wherein connecting shaft 314a can be arranged adjacent to driving assembly 313, the extending direction of connecting shaft 314a Vertical with 200 place plane of wafer, processing component 311 is connected to the free end of connecting shaft 314a, and wherein connecting shaft 314a exists Processing component 311 can be driven around axis rotation where the connecting shaft 314a when around the rotation of its own axis.In the utility model Specific example in, the rotational angle range of connecting shaft 314a can be preset, and specifically, which is at least defined As in any direction that when 311 ejecting fluid of processing component, the radial direction of wafer 200 can be sprayed to, work as wafer in this way When 200 rotation, so that it may so that fluid sprays in the whole surface of wafer 200.Wherein the slewing area of connecting shaft 314a is according to reality Border situation is determined.

In example as shown in Figure 1, processing component 311 is located in working chamber, and processing component 311 can be sprayed towards wafer 200 Fluid is out to clean wafer 200.Processing component 311 can be swung in vertical plane, i.e., processing component 311 can around point or Person's axis is waved or is moved back and forth, and the moving line of processing component 311 is located in same vertical plane.Driving structure 314 is used It is swung in driving processing component 311.

Processing component 311 can be towards 200 ejecting fluid of wafer, to play to the clear of wafer 200 during swing The effect washed and dried.Specifically, in a specific embodiment of the present application, when processing component 311 is sprayed towards wafer 200 When liquid, it can use liquid and wafer 200 cleaned, specifically, during wafer 200 rotates, 311 court of processing component Liquid is sprayed to wafer 200, the particle on 200 surface of wafer can under the influence of centrifugal force, via washing away from wafer for liquid 200 surface is detached from, to achieve the purpose that cleaning wafer 200.

When processing component 311 sprays gas towards wafer 200, it can use gas and wafer 200 be dried, specifically Ground, during wafer 200 rotates, processing component 311 sprays gas towards wafer 200, and swiftly flowing gas blows to wafer 200 surfaces are so as to accelerate the evaporation rate of the liquid on 200 surface of wafer, to achieve the purpose that dry wafer 200.

Specifically, processing unit 31 is for when cleaning to wafer 200, the fluid sprayed to can be deionization Water, organic solvent or other chemicals.The fluid that processing unit 31 is used to spray when wafer 200 is dried can be gas Body, such as nitrogen are sprayed using wafer 200 of the gas to rotation, so that wafer 200 is in rotary course simultaneously by gas The drying of body, so under the influence of centrifugal force, such as air-flow accelerates the drying of 200 surface liquid of wafer, and drying effect is good.

According to the processing unit 31 of the utility model embodiment, while wafer 200 rotates in a vertical plane, Ke Yili Liquid is sprayed come 200 surface of cleaning wafer to 200 surface of wafer with processing component 311, so that the particle on 200 surface of wafer can be with Under the influence of centrifugal force, and via washing away from the surface of wafer 200 for liquid it is detached from；Furthermore, it is possible to utilize processing component court Gas is sprayed to crystal column surface to dry crystal column surface, so that the air-flow using injection is blown on the wafer of rotation, thus plus The evaporation of fast crystal column surface liquid.Since the processing unit 31 will not generate 200 surface of wafer in the utility model embodiment Abrasion, and does not need to contact using other elements with wafer 200, will not 200 surface of secondary pollution wafer, cleaning effect is good.

In one embodiment of the utility model, as shown in Fig. 2, processing component 311 includes cleaning rod 3111 and conduit 3113, cleaning rod 3111 is connected to the free end of connecting shaft 314a and extends in the plane vertical with connecting shaft 314a, conduit 3113 are located on cleaning rod 3111 and can ejecting fluid towards wafer 200.When connecting shaft 314a rotation, cleaning rod can be driven 3111 rotations, and then conduit 3113 can be driven to rotate, so that the fluid that conduit 3113 is sprayed can be in a certain range It sprays.Optionally, connecting shaft 314a is arranged adjacent to driving assembly 313, and specifically, connecting shaft 314a is arranged in driving assembly 313 Radial outside.

In one embodiment according to the present utility model, distance range of the conduit 3113 away from wafer 200 is 5mm~30mm, It is possible thereby to will not contact during guaranteeing the rotation of wafer 200 with conduit 3113, and then prevent wafer 200 from cleaning or dry It is damaged in dry process.

As shown in Fig. 2, conduit 3113 includes that the first conduit 3114 and second is led in some embodiments of the utility model Pipe 3118, the first conduit 3114 and the second conduit 3118 can spray liquid or gas towards wafer 200, practical new at this In some specific examples of type, the first conduit 3114 can may include deionized water, chemistry towards the fluid that wafer 200 sprays Preparation etc..Second conduit 3118 can may include nitrogen or organic solvent towards the fluid that wafer 200 sprays.

As shown in Fig. 2, optionally, the first conduit 3114 is equipped with million sound spray heads 3117, the free end of the second conduit 3118 Equipped with nozzle 3119.By setting million sound spray heads 3117 so as to so that the first conduit 3114 spray fluid have mega sonic wave, There is certain vibration frequency by the fluid of million sound spray heads, i.e., and by the sundries on 200 surface of wafer wash, it is possible thereby to mention Cleaning effect of the high fluid to wafer 200.By the way that nozzle 3119 is arranged, so as to so that the fluid that the second conduit 3118 sprays The available more effective control of shape, to meet the different cleaning effects and cleaning efficiency to wafer 200.

Specifically, optionally, nozzle 3119 is constructed such that the fluid sprayed towards wafer 200 in cone shape or fan Shape.Such as when the second conduit 3118 sprays nitrogen towards wafer 200, the nitrogen of ejection is in cone shape by nozzle 3119, from And nitrogen can be rounded or oval when contacting with wafer 200, so as to improve the contact area of nitrogen Yu wafer 200, And then improve dry efficiency.For another example when nozzle 3119 is fan-shaped by the nitrogen of ejection, so that nitrogen connects with wafer 200 Can be linear when touching, to can also expand the contact area of nitrogen Yu wafer 200, but when wafer 200 rotates, nitrogen can be with The whole surface of quick inswept wafer 200, improves efficiency.

As shown in Fig. 2, optionally, the first conduit 3114 includes the first pipeline section 3115 and the second pipeline section 3116, the second pipeline section 3116 are connected to the free end of the first pipeline section 3115 through million sound spray heads 3117, and at least part of the second pipeline section 3116 stretches out cleaning Bar 3111, it is possible thereby to keep the structure of the first conduit 3114 simpler, at least part of the second pipeline section 3116 stretches out cleaning Bar 3111, so as to so that fluid ejection directly outside cleaning rod 3111 that the second conduit 3118 is sprayed, avoids to clear It washes bar 3111 and generates pollution.

In the preferred embodiment of the utility model, at least part of the first conduit 3114 is quartz pipe, specifically, The part in the downstream positioned at million sound spray heads 3117 of the first conduit 3114 can be quartz pipe, that is to say, that million sound spray heads One end of 3117 rear end, i.e. fluid flow direction is quartz pipe, and quartz pipe can make that there is certain vibration frequency fluid not send out Raw decaying, and certain vibration frequency is kept to spray to the surface of wafer 200, to improve its cleaning effect to wafer 200. In a specific embodiment of the utility model, the second pipeline section 3116 can be made of quartz pipe.

As shown in Fig. 2, in the alternative embodiment of the utility model, the installation space 3112 that is limited in cleaning rod 3111 Interior, the first conduit 3114 and the second conduit 3118 are each provided in installation space 3112.To by defined by cleaning rod 3111 Installation space 3112 can be right while being defined the installation site of the first conduit 3114 and the second conduit 3118 First conduit 3114 and the second conduit 3118 play the role of being effectively protected.

In some embodiments of the utility model, when work, the first conduit 3114 is used to spray liquid towards wafer 200 Body, the second conduit 3118 are used to spray gas towards wafer 200.That is, when needing to clean wafer 200, place It manages the first conduit 3114 work in component 311 and sprays liquid towards wafer 200.When needing that wafer 200 is dried, Second conduit 3115 of processing component 311 can spray gas towards wafer 200.

As shown in figure 3, processing unit 31 further includes cleaning assembly 315 in some embodiments of the utility model, cleaning Component 315 and processing component 311 are respectively provided at the opposite two sides of wafer 200, and cleaning assembly 315 is configured to can be towards wafer 200 ejecting fluids.Processing component 311 and cleaning assembly 315 is respectively set by the opposite two sides in wafer 200 as a result, from And can simultaneously the opposite sides of wafer 200 is cleaned or is dried, thus not only can be improved wafer 200 cleaning or Person's drying effect, but also cleaning or the drying efficiency of wafer 200 can be improved.

In the specific example of the utility model, cleaning assembly 315 can be configured can be towards the neighbouring driving of wafer 200 The side ejecting fluid of component 313, specifically, as shown in figure 3, cleaning assembly 315 can penetrate vertical plate 3121 towards wafer 200 ejecting fluids.Above-mentioned processing component 311 can be towards the side ejecting fluid of the separate driving assembly 313 of wafer 200. Optionally, cleaning assembly 315 is obliquely installed, so that its fluid sprayed can be sprayed onto the central area of wafer 200, so as to It is more preferable to the effect of cleaning or the drying of wafer 200.

Optionally, cleaning assembly 315 can spray liquid or gas towards wafer 200, when cleaning assembly 315 is towards wafer When 200 ejection liquid, cleaning assembly 315 can be cleaned wafer 200, when cleaning assembly 315 sprays gas towards wafer 200 When body, cleaning assembly 315 can be dried wafer 200.

It should be noted that processing component 311 and cleaning assembly 315 can courts when needing to clean wafer 200 Liquid is sprayed to wafer 200.When needing that wafer 200 is dried, processing component 311 and cleaning assembly 315 can directions Wafer 200 sprays gas.

Optionally, in some embodiments of the utility model, processing unit 31 further includes shield (not shown go out), is prevented Shield is used to be located at the outside of driving assembly 313 and wafer 200, so as to prevent wafer 200 from rotating during liquid Or on impurity splashes under the influence of centrifugal force, or even rebound to wafer 200, to influence the cleaning effect of wafer 200 Fruit.Therefore cleaning and the drying effect of wafer 200 can be improved in setting shield.

Below with reference to FIG. 1 to FIG. 9 description according to the chemically mechanical polishing of the wafer of the utility model second aspect embodiment System 100.It include throwing according to the chemical-mechanical polishing system 100 of the wafer of the utility model embodiment as shown in Fig. 5~Fig. 9 Light unit 20 and processing unit 31.

As shown in FIG. 1 to 3, according to the utility model embodiment, processing unit 31 is configured to that wafer 200 can be made perpendicular Face interior rotation directly, processing unit 31 includes the processing component 311 that can be swung in vertical plane, and processing component 311 can be towards wafer 200 ejecting fluids are to clean wafer 200.

According to the chemical-mechanical polishing system 100 of the wafer of the utility model embodiment, filled by the way that above-mentioned processing is arranged 31 are set, to have corresponding beneficial effect, i.e., during rotating wafer 200, using processing component 311 towards wafer 200 surfaces carry out injection fluid, so as to avoid processing component 311 from contacting with wafer 200, greatly reduce wafer in this way 200, in processed a possibility that being damaged in the process, so largely, play the role of protection to wafer 200. Further, since when spraying fluid towards wafer 200, state of the wafer 200 always in rotation is ejected into 200 table of wafer in this way The surface for the slave wafer 200 that fluid on face is more easier under the influence of centrifugal force is flowed through or is thrown away, so as to improve crystalline substance The treatment effect of circle 200.

Specifically, can use processing component 311 to 200 table of wafer while wafer 200 rotates in a vertical plane 200 surface of liquid rinse wafer is sprayed in face, so that the particle on 200 surface of wafer can under the influence of centrifugal force, and via liquid Washing away for body is detached from from the surface of wafer 200；Furthermore, it is possible to using processing component 311 towards 200 surface of wafer spray gas come Dry crystal column surface, so that the air-flow using injection is blown on the wafer 200 of rotation, to accelerate 200 surface liquid of wafer Evaporation.Since the processing unit 31 will not generate abrasion to 200 surface of wafer in the utility model embodiment, and do not need Contacted using other elements with wafer 200, will not 200 surface of secondary pollution wafer, cleaning and drying effect it is good.

In the embodiments of the present invention, chemical-mechanical polishing system 100 includes post-processing unit 30, post-processing unit Multiple processing units 31 can be set in 30, multiple processing units 31 are arranged side by side.Wherein in an implementation of the utility model Example in, the cleaning model of multiple processing units 31 be it is identical, i.e., the structure of multiple processing units 31 can be identical.At this In another embodiment of utility model, the cleaning model of multiple processing units 31 be can be different, i.e., multiple processing units May include in 31 the processing unit 31 of at least one structure it is different from the structure of other processing units 31.It is possible thereby to convenient The control of the cleaning model of wafer 200 improves the cleaning effect of wafer 200.

In some embodiments of the utility model, with reference to Fig. 9, processing unit 31 can be multiple, multiple processing units 31 successively arrange, wherein optionally, being successively defined as the first processing in the transmission path of wafer in multiple processing units 31 Device 31a, second processing device 31b, third processing unit 31c, and so on.

It, can also be using at the last one in this way after being cleaned using the one or more in multiple processing units 31 Wafer 200 is dried in reason device 31, removes the liquid on 200 surface of wafer, the drop for being attached to 200 surface of wafer is avoided to exist On 200 surface of wafer, generation is water stain during naturally dry, to guarantee the cleaning effect of wafer 200.

As shown in Fig. 4-Fig. 8, in some embodiments of the utility model, post-processing unit 30 can also include that round brush fills Set 35.Brush device 35 can be used for carrying out round brush 352 to wafer 200 cleaning.As shown in figure 4, brush device 35 may include Mounting shell 351, wafer 200 can be rotatably arranged in mounting shell 351 in longitudinal direction, and round brush 352 is rotatably arranged at In mounting shell 351, round brush 352 is contacted with wafer 200.Thus round brush 352 can rub to wafer 200 during rotating Cleaning.

In some embodiments of the utility model, optionally, post-processing unit 30 further includes that at least one is used for crystalline substance Circle 200 carries out million acoustic devices 36 of megasonic cleaning.Wafer 200 is cleaned by million acoustic devices 36, so as to so that wafer 200 are cleaned by different cleaning ways, and then cleaning effect can be improved.Optionally, million acoustic devices 36 are configured to Wafer 200 is immersed in liquid and carries out megasonic cleaning.Or optionally, million acoustic devices 36 are configured to spray towards wafer 200 Spill the liquid with mega sonic wave.It is possible thereby to keep the cleaning model of wafer 200 more diversified.Be conducive to improve wafer 200 Cleaning effect.

It include at least one in post-processing unit 30 as shown in Fig. 5~Fig. 8 in some embodiments of the utility model Processing unit 31 can selectively be equipped with brush device 35 and million acoustic devices 36,35 He of brush device in post-processing unit 30 The quantity of million acoustic devices 36, and, wafer can appoint through the cleaning sequence of processing unit 31, brush device 35 and million acoustic devices 36 Meaning.

It specifically, may include processing unit 31 and brush device 35, wafer as shown in fig. 6, in post-processing unit 30 200 can be cleaned by processing unit 31 and brush device 35 in any order.Or as shown in fig. 7, post-processing In unit 30；It may include processing unit 31 and million acoustic devices 36, wafer 200 can pass through processing unit 31 in any order It is cleaned with million acoustic devices 36.

Optionally, in post-processing unit 30, processing unit 31, brush device 35 and million acoustic devices 36 can be to wafers It is cleaned, and the sequence of processing unit 31, the quantity of brush device 35 and million acoustic devices 36 and cleaning can be arbitrary, example As shown in figure 8, processing unit 31, brush device 35 and million acoustic devices 36 can be respectively provided with one, wafer 200 can be passed through successively Cross brush device 35, million acoustic devices 36 and processing unit 31 be sequentially completed cleaning or wafer 200 can also successively by processing Device 31, brush device 35 and million acoustic devices 36 are sequentially completed cleaning.Its sequence can be any, and details are not described herein.

It optionally, may include multiple (two or more) processing dresses as shown in figure 9, in post-processing unit 30 31 are set, wafer 200 can be cleaned by above-mentioned multiple processing units 31 respectively.Further, in post-processing unit 30 In addition to including multiple processing units 31, it is also provided with brush device 35 and million acoustic devices 36, and brush device 35 and million sound dress Set 36 quantity and wafer 200 cleaning sequence without limitation.

In the embodiments of the present invention, as shown in figs. 6-9, post-processing unit 30 is also provided with dry dress 32 are set, the downstream of processing unit 31 is arranged in drying device 32, and drying device 32 is for being dried wafer 200.Thus brilliant The drying of circle 200 can use drying device 32 and be dried, and drying effect is good.

Optionally, as described in Figure 9, post-processing unit 30 can also include fixed frame 33, drying device 32 and processing dress 31 are set to be located at side by side in fixed frame 33.Thus post-processing unit 30 is for entire chemical-mechanical polishing system 100 It has a style of one's own, before the assembling for completing entire chemical-mechanical polishing system 100, individually post-processing unit 30 can be carried out pre- It sets, so as to improve the assembling rate of entire chemical-mechanical polishing system 100.

Optionally, as shown in figure 9, fixed frame 33 is equipped with the cleaning manipulator 34 for being used for transmission wafer 200.It is wherein clear Washing manipulator 34 can be used for transmitting wafer 200 or cleaning manipulator 34 between multiple processing units 31, drying device 32 It can be also used for transmitting wafer 200 between the first turnover mechanism 40 and post-processing unit 30 or cleaning manipulator 34 may be used also For transmitting wafer 200 between transfer manipulator 50 and post-processing unit 30.

According to the post-processing unit 30 of the chemical-mechanical polishing system of the wafer of the utility model embodiment, in processing unit In 31, while wafer 200 rotates in a vertical plane, it is clear to 200 surface of wafer injection liquid to can use processing component 311 200 surface of wafer is washed, so that the particle on 200 surface of wafer can under the influence of centrifugal force, and washing away from crystalline substance via liquid The surface of circle 200 is detached from；Furthermore, it is possible to spray gas towards crystal column surface using processing component 311 to dry wafer table 200 Face, so that the air-flow using injection is blown on the wafer 200 of rotation, to accelerate the evaporation of 200 surface liquid of wafer.This reality It is worn in new embodiment since the processing unit 31 will not generate 200 surface of wafer, and does not need to utilize other yuan Part is contacted with wafer 200, will not 200 surface of secondary pollution wafer, cleaning effect is good.

As shown in figure 9, further including front end unit 10 according to the wafer chemical polishing system 100 of the utility model embodiment. Front end unit 10 includes three kinds of situations for storing and/or detecting wafer 200 here, and one front end unit 10 can be only used for Wafer 200 is stored, secondly front end unit 10 can also be only used for detection wafer 200, third front end unit 10 can also have simultaneously There is storage wafer 200 and detects the function of wafer 200.

In some embodiments of the utility model, polishing unit 20 includes multiple for being polished to wafer 200 Module 21 is polished, multiple polishing modules 21 are arranged side by side, and at least one polishing 21 adjacent front end unit 10 of module setting.In order to The convenience of description, the order number consecutivelies by multiple polishing modules 21 from close to front end unit 10 to far from front end unit 10 are the One polishing module 21a, the second polishing module 21b, third polishing module 21c, the 4th polishing module 21d are waited and so on.

With reference to specific embodiment shown in Fig. 9, the first closest front end in multiple polishing modules 21 polishing module 21a is single Member 10, optionally, the side of the first polishing module 21a are connected with the back side of front end unit 10, the front of the first polishing module 21a Right side with front end unit 10 is in the same side, and the first polishing module 21a, second polishes module 21b, and third polishes module 21c, 4th polishing module 21d is mounted side by side, and the front of four polishing modules 21 is concordant, side is connected.

It is to be understood that in the present invention, term " front " refers to device and element when in use towards operation The one side of person, " back side " refer to that the one side with " front " face, " side " refer to the device when in use with the device and element Two faces being connected with each other when in use with " front " with element, wherein " left side " refers to when operator is in face of the device and member Positioned at the one side of operator left-hand side when part, " right side ", which refers to, is located at the operator right side when operator is in face of the device and element One side on hand.

Post-processing unit 30 and polishing unit 20 are oppositely arranged on the same side of front end unit 10, and post-processing unit 30 can be with It is connected with front end unit 10.With reference to specific embodiment shown in Fig. 9, optionally, the side of post-processing unit 30 and front end unit 10 back side is connected, and the front of post-processing unit 30 and the left side of front end unit 10 are located at the same side, post-processing unit 30 The back side is opposite with the polishing back side of unit 20.

Due in the processing unit 31 of post-processing unit 30, while wafer 200 rotates in a vertical plane, Ke Yili 200 surface of fluid cleaning wafer is sprayed to 200 surface of wafer with processing component 311, so that the particle on 200 surface of wafer can be It under the action of centrifugal force, and is detached from via washing away from the surface of wafer 200 for liquid, thus the processing unit 31 will not be to wafer 200 surfaces generate abrasion, and do not need to contact using other elements with wafer 200, will not 200 surface of secondary pollution wafer, Cleaning effect is good.

Therefore, according to the chemical-mechanical polishing system 100 of the wafer of the utility model embodiment, by be arranged it is above-mentioned after Processing unit 30, so as to improve whole wafer chemical-mechanical polishing system 100 the cleaning effect to wafer 200, keep away Exempt to generate damage to wafer 200.

Below with reference to Fig. 5~Fig. 9 detailed description according to the chemical-mechanical polishing system of the wafer of the utility model embodiment 100。

In example as shown in Figure 9, front end unit 10 may include wafer cassette plummer and wafer detection platform.Wafer Box plummer is used to support wafer cassette, and wafer cassette is used for storing wafer 200, and wafer cassette plummer can be multiple, multiple wafers Wafer cassette on box plummer may be respectively used for the qualified wafer 200 and polished wafer 200 of storage polishing.Wafer inspection 200 mass of wafer of polishing front and back can be detected by surveying platform.

Wafer cassette plummer and wafer detection platform may be mounted at the same side of 10 frame of front end unit, and wafer cassette is held Microscope carrier and wafer detection platform can be arranged side by side along the length direction of front end unit 10.

Drying machinery hand is used to transmit wafer 200 between wafer cassette plummer and wafer detection platform, in front end unit Wafer 200 is transmitted between 10 and polishing unit 20, wafer 200 is transmitted between post-processing unit 30 and front end unit 10.

In the embodiments of the present invention, polishing unit 20 may include multiple polishing modules 21 arranged side by side, ginseng Embodiment shown in Fig. 9 is examined, optionally, polishing module 21 can be four, in adjacent front end unit 10 to far from front end unit It include the first polishing module 21a, the second polishing module 21b, third polishing module 21c, the 4th polishing module on 10 direction 21d.First polishing module 21a is connected with front end unit 10, in this way, convenient for wafer 200 in front end unit 10 and the first polished die It is transmitted between block 21a, the second polishing module 21b is located at the side of the separate front end unit 10 of the first polishing module 21a, and third is thrown Optical module 21c is located at the side of the separate front end unit 10 of the second polishing module 21b, and the 4th polishing module 21d is located at third throwing The side of the separate front end unit 10 of optical module 21c.When there is more to polish module 21 and so on.

Optionally, such as in the embodiment that polishing module 21 is four, the first polishing module 21a and the second polishing module 21b can execute rough polishing respectively and essence is thrown, such as first on the first polishing module 21a from the wafer 200 that front end unit 10 transmits Rough polishing, the wafer 200 by the first polishing module 21a rough polishing pass to the second polishing module 21b essence again and throw, the second polishing module Wafer 200 after 21b again throws essence passes to post-processing unit 30；Similarly, the 4th polishing module 21d and third polish module 21c can execute rough polishing respectively and essence is thrown, such as first on the 4th polishing module 21d from the wafer 200 that front end unit 10 transmits Rough polishing, the wafer 200 by the 4th polishing module 21d rough polishing pass to third polishing module 21c essence again and throw, and third polishes module Wafer 200 after 21c again throws essence passes to post-processing unit 30.

It should be noted that there are many combining forms of multiple polishing modules 21, such as a polishing module for rough polishing 21 corresponding two polishing module 21, one corresponding two polishings for rough polishing of polishing module 21 thrown for essence for essence throwing Module 21 etc. can be allocated combination according to the working hour of each process in actual application.Wafer 200 can be with as a result, It is polished parallel between polishing module 21, the polishing efficiency of wafer 200 is high.

In some embodiments of the utility model, polishing mechanical hand, polishing mechanical can also be arranged by polishing in unit 20 Hand can be used for transmitting wafer 200 between multiple polishing modules 21.

In some embodiments of the utility model, chemical-mechanical polishing system 100 further includes 40 He of the first turnover mechanism Transfer manipulator 50.After first turnover mechanism 40 is located between polishing unit 20 and post-processing unit 30 so that wafer 200 to be sent into Processing unit 30, the first turnover mechanism 40 by horizontal direction for being overturn wafer 200 to vertical direction.Wherein, single in polishing In member 20, wafer 200 can be oriented in horizontal direction and be polished, and in post-processing unit 30, wafer 200 can be in vertical side It is cleaned to orientation.Therefore, by be arranged the first turnover mechanism 40, can automatically wafer 200 from polishing unit 20 into It is overturn before row post-processing unit 30, avoids manual operation, high degree of automation.

Transfer manipulator 50 is used to be fed through the first turnover mechanism 40 after taking out wafer 200 by polishing unit 20.Transfer Manipulator 50 is used between polishing unit 20 and the first turnover mechanism 40 sequentially transmit wafer 200.From there through in setting Turn manipulator 50 can be convenient wafer 200 polishing unit 20 and the first turnover mechanism 40 between transmit, improve wafer 200 it is defeated Send efficiency.

Further, in the alternative embodiment of the utility model, the drying machinery hand of front end unit 10 can be by wafer 200 are sent to the first polishing module 21a, and wafer 200 polishes module 21a, the second polishing module 21b, third polished die first After completing polishing in one or several modules in block 21c, the 4th polishing module 21d, the is sent into through the transmission of transfer manipulator 50 One turnover mechanism 40.

In another embodiment of the utility model, the setting sequence of transfer manipulator 50 and the first turnover mechanism 40 can To be exchanged, such as the first turnover mechanism 40 can be used for wafer 200 between polishing unit 20 and transfer manipulator 50 It sequentially transmits, i.e., after wafer 200 is polished in polishing unit 20, can use polishing mechanical hand and be sent into the first turnover mechanism 40, in the first turnover mechanism 40, wafer 200 is turned into vertical direction by horizontal direction, and transfer manipulator 50 is overturn from first Wafer 200 is taken out in mechanism 40 and is sent in post-processing unit 30.

Such as in the specific example of the utility model, transfer manipulator 50 be can be set in multiple polishing modules 21 Between, with reference to embodiment shown in Fig. 9, the setting of transfer manipulator 50 the second polishing module 21b and third polishing module 21c it Between, after wafer 200 polishes in one or more of multiple polishing modules 21, send wafer 200 to second polishing Module 21b or third polish module 21c, and wafer 200 is polished module 21b or third polished die from second by transfer manipulator 50 Block 21c is sent into post-processing unit 30 after taking out.

In the embodiments of the present invention, chemical-mechanical polishing system 100 can also include the second turnover mechanism 60, the Two turnover mechanisms 60 are located between post-processing unit 30 and front end unit 10 so that wafer 200 to be sent into front end unit 10, and second Turnover mechanism 60 by vertical direction for being overturn wafer 200 to horizontal direction.Optionally, wafer 200 is in front end unit 10 It can be positioned in horizontal direction, therefore by the second turnover mechanism 60 of setting, so as to pass through the second turnover mechanism 60 Overturning, facilitate will wafer 200 be sent into front end unit 10 in detected or stored.Wherein, the second turnover mechanism 60 is used for So that wafer 200 is become horizontal direction orientation by vertical direction orientation, there is this to realize the automatic turning of wafer 200.

Optionally, after the completion of dry in drying device 32 when wafer 200, the cleaning manipulator 34 of post-processing unit 30 or Wafer 200 can be taken out by the second turnover mechanism 60 and be returned in front end unit 10 by the drying machinery hand of person's front end unit 10 It is detected or is stored.In the specific example of the utility model, wafer 200 is successively by the first processing unit 31a, and second Processing unit 31b, third processing unit 31c are cleaned, and the wafer 200 after completing cleaning is dried in drying device 32 (can certainly be dried in third processing unit 31c) completes dry wafer 200 in the second turnover mechanism 60 by erecting Straight overturning is level, and wafer 200 is put back to front end unit from the taking-up of the second turnover mechanism 60 by the drying machinery hand of front end unit 10 It is stored in wafer cassette in 10.

The crystalline substance carried out according to the processing unit using above-mentioned wafer of the utility model third aspect embodiment is described below Round processing method, includes the following steps:

S1. wafer is retained on driving assembly, starts driving assembly to drive wafer to rotate；

S2. start processing component and spray liquid towards wafer to clean to wafer；

S3. start processing component and spray gas towards wafer wafer to be dried.

Wafer is cleaned and dried by the processing unit using above-mentioned wafer, not only cleaning and dry effect It is good, and do not need to take out wafer from processing unit after cleaning, so that it may it is dried in situ, step Method is simple.

Further, in step s 2 further include starting cleaning assembly and spray liquid towards wafer to carry out clearly to wafer It washes.Since cleaning assembly and processing component are respectively provided at the opposite two sides of wafer, thus when being cleaned and dried to wafer, Processing component and cleaning assembly can be made to work at the same time, liquid or gas can be sprayed simultaneously to the two sides of wafer simultaneously in this way Body is cleaned or is dried simultaneously to the two sides of wafer simultaneously, can greatly be improved efficiency in this way.

In the description of this specification, reference term " one embodiment ", " some embodiments ", " illustrative examples ", The description of " example ", " specific example " or " some examples " etc. means specific features described in conjunction with this embodiment or example, knot Structure, material or feature are contained at least one embodiment or example of the utility model.In the present specification, to above-mentioned art The schematic representation of language may not refer to the same embodiment or example.Moreover, description specific features, structure, material or Person's feature can be combined in any suitable manner in any one or more of the embodiments or examples.

While there has been shown and described that the embodiments of the present invention, it will be understood by those skilled in the art that: These embodiments can be carried out with a variety of variations, modification, replacement in the case where not departing from the principles of the present invention and objective And modification, the scope of the utility model are defined by the claims and their equivalents.

Claims (15)

1. a kind of processing unit of wafer characterized by comprising driving assembly and processing component, the driving component band The processing component is around the axis oscillating perpendicular to the crystal column surface with to the wafer table while moving wafer rotation Spray fluid in face.

2. the processing unit of wafer according to claim 1, which is characterized in that the fluid includes for cleaning the crystalline substance Round liquid and/or the gas for drying the wafer.

3. the processing unit of wafer according to claim 1, which is characterized in that the axis is located at outside the wafer circumference Side.

4. the processing unit of wafer according to claim 1, which is characterized in that fixation is set the processing component at its end At least one nozzle is set, the outlet of the nozzle is away from the 5~30mm of wafer.

5. the processing unit of wafer according to claim 4, which is characterized in that further include:

Shell, working chamber is limited in the shell, and the processing component is located in the working chamber and can put in vertical plane Dynamic, the driving component is for driving the wafer to rotate in vertical plane；

Driving structure, the driving structure is for driving the processing component to swing.

6. the processing unit of wafer according to claim 5, which is characterized in that the driving structure includes connecting shaft, institute It states connecting shaft horizontal extension and can be located in the working chamber to rotation around its axis, the processing component includes:

Cleaning rod, the cleaning rod are connected to the free end of the connecting shaft and prolong in the plane vertical with the connecting shaft It stretches；

Conduit, the conduit are located on the cleaning rod and can spray the fluid towards the wafer.

7. the processing unit of wafer according to claim 6, which is characterized in that the conduit includes:

First conduit, first conduit are equipped with million sound spray heads；

The free end of second conduit, second conduit is equipped with the nozzle.

8. the processing unit of wafer according to claim 7, which is characterized in that the nozzle is constructed such that described in The fluid that wafer sprays is in cone shape or sector.

9. the processing unit of wafer according to claim 7, which is characterized in that the installation limited in the cleaning rod is empty In, first conduit and second conduit are each provided in the installation space.

10. the processing unit of wafer according to claim 7, which is characterized in that first conduit includes: the first pipeline section With the second pipeline section, second pipeline section is connected to the free end of first pipeline section, second pipeline section through million generating devices At least part stretch out the cleaning rod.

11. the processing unit of wafer according to claim 7, which is characterized in that at least part of first conduit For quartz pipe.

12. the processing unit of wafer according to claim 5, which is characterized in that the driving component includes:

Disk body is rotated, the rotation disk body is identical as the shape of the wafer, and can rotate in vertical plane；

Retaining piece, retaining piece are located at the edge of the rotation disk body for the wafer to be fixed.

13. the processing unit of wafer according to claim 5, which is characterized in that it further include cleaning assembly, the cleaning group Part and the processing component are respectively provided at the opposite two sides of the wafer, and the cleaning assembly is configured to can be towards the crystalline substance Circle ejecting fluid.

14. the processing unit of wafer according to claim 13, which is characterized in that the shell includes:

Vertical plate, the vertical plate extend along vertical, and the driving component is connected on the vertical plate by driving part, the cleaning Component can pass through the vertical plate towards the wafer ejecting fluid；

Cover board, the cover board are located at the top of the vertical plate along horizontal extension, the cover board；

Bottom plate, the bottom plate are located at the bottom of the vertical plate along horizontal extension, the bottom plate

Side plate, the top and bottom of the side plate are connected with the cover board and the bottom plate respectively, a side of the side plate with The vertical plate is connected.

15. a kind of chemical-mechanical polishing system characterized by comprising

Unit is polished, the polishing unit includes multiple polishing modules for being polished to the wafer, multiple throwings Optical module is arranged side by side；

The processing unit of wafer described in any one of -14 according to claim 1.