JP2573396B2 - Etching and developing method - Google Patents
Etching and developing methodInfo
- Publication number
- JP2573396B2 JP2573396B2 JP2158001A JP15800190A JP2573396B2 JP 2573396 B2 JP2573396 B2 JP 2573396B2 JP 2158001 A JP2158001 A JP 2158001A JP 15800190 A JP15800190 A JP 15800190A JP 2573396 B2 JP2573396 B2 JP 2573396B2
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- substrate
- surface side
- distance
- chemical solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は印刷配線板等で薬液噴霧によりエッチングす
る方法並びに現像する方法（現像についてはエッチング
と同様に適用できるが、以下説明を省略して主にエッチ
ングについて述べる）に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for etching a printed wiring board or the like by spraying a chemical solution and a method for developing the same (development can be applied in the same manner as etching; The following mainly describes etching).
［従来の技術］ 一般に印刷配線板等のエッチングでは、特開昭49−44
944号公報に見られるように、薬液を噴霧する際、ノズ
ル配管を揺動させて均一なエッチングを実現しようとし
ている。つまりノズル配管の振動により基板（生産物）
上に滞留する老化した薬液を新しい薬液と交換して均一
なエッチングを試みている。第11図（ａ）（ｂ）はエッ
チング状態を示し、１はノズル配管、２はノズル、３は
薬液の溜まり、４は被エッチング物である基板、５は搬
送コンベアである。[Prior Art] In general, etching of printed wiring boards and the like is disclosed in
As disclosed in Japanese Patent Publication No. 944, when a chemical solution is sprayed, a nozzle pipe is swung to realize uniform etching. In other words, the substrate (product) by the vibration of the nozzle pipe
We are trying to perform uniform etching by replacing the aged chemical solution that has accumulated on the top with a new chemical solution. FIGS. 11 (a) and 11 (b) show an etching state, 1 is a nozzle pipe, 2 is a nozzle, 3 is a reservoir for a chemical solution, 4 is a substrate to be etched, and 5 is a conveyor.
［発明が解決しようとする課題］ しかし基板４の上面においては、基板４の寸法が大き
くなると、第11図（ａ）に示すように基板４の上面に当
たった薬液は基板４の表面を伝って基板４の端部から落
下するので、中央部は老化した薬液が溜まりやすく、端
部は新しい薬液との液交換が容易である。そのため端部
のエッチングが敏速であるが、中央部のエッチングが遅
く、不均一なエッチングになる。また基板４の下面にお
いては、第11図（ｂ）に示すように基板４に当たった薬
液は端部からだけでなく、中央部からも自然（重力）落
下するので、反対に端部に老化した薬液が溜まりやす
く、端部のエッチングが遅く、中央部のエッチングが敏
速であるため不均一なエッチングとなる。[Problems to be Solved by the Invention] However, when the size of the substrate 4 is increased on the upper surface of the substrate 4, the chemical liquid hitting the upper surface of the substrate 4 travels along the surface of the substrate 4 as shown in FIG. Since the substrate drops from the end of the substrate 4, the aged chemical solution easily accumulates in the central portion, and the end portion facilitates liquid exchange with a new chemical solution. Therefore, the etching of the end portion is quick, but the etching of the central portion is slow, resulting in uneven etching. On the lower surface of the substrate 4, as shown in FIG. 11 (b), the chemical solution hitting the substrate 4 drops naturally (gravity) not only from the edge but also from the center. The accumulated chemical solution easily accumulates, the etching at the edge is slow, and the etching at the center is rapid, resulting in uneven etching.
本発明は叙述の点に鑑みてなされたものであって、本
発明の目的とするところは基板全面に亘って均一なエッ
チングや現像ができるエッチング並びに現像方法を提供
するにある。The present invention has been made in view of the above description, and an object of the present invention is to provide an etching and developing method capable of performing uniform etching and development over the entire surface of a substrate.
［課題を解決するための手段］ 上記目的を達成するため本発明エッチング並びに現像
方法は、エッチング装置または現像装置の搬送コンベア
に基板を載せてノズルから薬液を噴霧しながら基板を移
動してエッチングまたは現像をする方法において、搬送
コンベアの上面側では搬送コンベアの駆動方向と直交す
る方向の端部から中央部に近付く程、ノズルのスプレー
口と基板表面との距離を短くしたり、ノズル分布密度を
高くしたり、ノズルのスプレー圧力を大きくしたり、流
量の大きいノズルを使用したりして薬液が強く或は多量
に基板に当たる条件で噴霧し、また搬送コンベアの下面
側では搬送コンベアの駆動方向と直交する方向の端部か
ら中央部に近付く程、ノズルのスプレー口と基板の表面
との距離を長くしたり、ノズル分布密度を低くしたり、
ノズルのスプレー圧力を小さくしたり、流量の小さいノ
ズルを使用したりして薬液が弱く或は少量の基板に当た
る条件で噴霧することを特徴とする。[Means for Solving the Problems] In order to achieve the above object, the etching and developing method of the present invention is to perform etching or developing by moving a substrate while spraying a chemical solution from a nozzle while placing the substrate on a conveyor of an etching device or a developing device. In the method of developing, on the upper side of the conveyor, as the distance from the end in the direction perpendicular to the driving direction of the conveyor toward the center increases, the distance between the nozzle spray port and the substrate surface is shortened or the nozzle distribution density is reduced. The chemical solution is sprayed under the condition that the chemical solution is strong or a large amount hits the substrate by increasing the spray pressure of the nozzle, using a nozzle with a large flow rate, or using a nozzle with a large flow rate. As the distance from the end in the orthogonal direction to the center increases, the distance between the nozzle spray port and the surface of the substrate increases, and the nozzle distribution density decreases. Comb,
It is characterized in that a chemical solution is sprayed under a condition that a chemical solution hits a weak or small amount of a substrate by reducing a spray pressure of a nozzle or using a nozzle having a small flow rate.
基板の上面側において薬液が強く或は多量に基板に当
たるようにする手段を列挙すると次の通りである。Means for causing the chemical solution to strongly or heavily hit the substrate on the upper surface side of the substrate are as follows.
ノズルのスプレー口と基板表面との距離を短くする。Shorten the distance between the nozzle spray port and the substrate surface.
ノズル分布密度を高くする。Increase the nozzle distribution density.
ノズルのスプレー圧力を大きくする。Increase nozzle spray pressure.
流量の大きいノズルを使用する。Use a nozzle with a high flow rate.
上記とを組み合わせる。Combine with the above.
上記とを組み合わせる。Combine with the above.
これら以外の組み合わせでもよい。 Other combinations may be used.
基板の下面側において薬液が弱く或は少量で基板に当
たるようにする手段を列挙する次の通りである。The following is a list of means for making the chemical liquid weakly or in a small amount hit the substrate on the lower surface side of the substrate.
′ノズルのスプレー口と基板表面との距離を長くす
る。'Increase the distance between the nozzle spray port and the substrate surface.
′ノズル分布密度を低くする。'Reduce the nozzle distribution density.
′ノズルのスプレー圧力を小さくする。'Reduce the nozzle spray pressure.
′流量の小さいノズルを使用する。'Use a low flow nozzle.
′上記′と′を組み合わせる。Combine 'above' and '.
′上記′と′を組み合わせる。Combine 'above' and '.
［作用］ 基板の上面では端部に比べて中央部に薬液を強くある
いは多量に当てて中央部の薬液の交換を促進し、基板の
上面全面に亘って均一にエッチングや現像ができる。ま
た基板の下面では中央部に比べて端部の薬液の交換を促
進し、基板の下面全面に亘って均一にエッチングや現像
ができる。[Operation] On the upper surface of the substrate, a chemical solution is applied to the central portion more strongly or in a larger amount than the end portion to promote exchange of the chemical solution in the central portion, and etching and development can be performed uniformly over the entire upper surface of the substrate. In addition, the exchange of the chemical solution at the end portion of the lower surface of the substrate is promoted as compared with the central portion, and etching and development can be performed uniformly over the entire lower surface of the substrate.
［実施例］ 実施例１ これは基板４の上面側の条件をとし、基板４の下面
側の条件を′としたものである。つまり、基板４の上
面側では端部から中央部に近付く程、ノズル２のスプレ
ー口と基板４表面との距離を短くしてあり、基板４の下
面側では端部から中央部に近付く程、ノズル２のスプレ
ー口と基板４表面との距離を長くしてある。第１図に示
す複数個のノズル２を有するノズル配管１は搬送コンベ
ア５の搬送方向（第１図矢印イ方向）を向いており、ノ
ズル配管１を複数列（本実施例の場合符号Ａ乃至Ｆに示
す６列）並べてある。[Example] Example 1 In this example, the condition on the upper surface side of the substrate 4 was set and the condition on the lower surface side of the substrate 4 was set as'. That is, the distance between the spray port of the nozzle 2 and the surface of the substrate 4 is shortened as the distance from the end to the center on the upper surface of the substrate 4 is increased. The distance between the spray port of the nozzle 2 and the surface of the substrate 4 is increased. The nozzle pipe 1 having a plurality of nozzles 2 shown in FIG. 1 is oriented in the conveying direction of the conveying conveyor 5 (the direction of arrow A in FIG. 1), and the nozzle pipes 1 are arranged in a plurality of rows (in the present embodiment, reference numerals A to A). (6 rows shown in F).
基板４の上面側では符号A,Fで示すノズル配管１のノ
ズル２の長さは第２図（ａ）に示すように短く、ノズル
２のスプレー口と基板４の表面との間の距離がl1（例え
ば160mm）と長くなっている。符号B,Eで示すノズル配管
１のノズル２の長さは第２図（ｂ）に示すように中間の
長さになっており、ノズル２のスプレー口と基板４表面
との距離がl2（例えば120mm）と中間の長さになってい
る。このノズル２は中間の長さのノズル延長用パイプ6a
を介して設けてある。符号C,Dに示すノズル配管１のノ
ズル２の長さは第２図（ｃ）に示すように長くなってお
り、ノズル２のスプレー口と基板４表面との距離がl
3（例えば80mm）と短くなっている。このノズル２は長
いノズル延長パイプ6bを介して設けてある。On the upper surface side of the substrate 4, the length of the nozzle 2 of the nozzle pipe 1 indicated by reference characters A and F is short as shown in FIG. 2 (a), and the distance between the spray port of the nozzle 2 and the surface of the substrate 4 is small. l 1 (for example, 160 mm). The length of the nozzle 2 of the nozzle pipe 1 indicated by reference characters B and E is an intermediate length as shown in FIG. 2B, and the distance between the spray port of the nozzle 2 and the surface of the substrate 4 is l 2. (For example, 120 mm). This nozzle 2 is an intermediate length nozzle extension pipe 6a
Is provided via The length of the nozzle 2 of the nozzle pipe 1 shown by reference numerals C and D is long as shown in FIG. 2 (c), and the distance between the spray port of the nozzle 2 and the surface of the substrate 4 is l.
3 (for example, 80 mm). The nozzle 2 is provided via a long nozzle extension pipe 6b.
また基板４の下面側では符号A,Fに示すノズル配管１
では第２図（ｃ）に示すようにノズル２と基板４表面と
の距離がl3と短く、符号B,Eで示すノズル配管１では第
２図（ｂ）に示すようにノズル２と基板４の表面との距
離がl2と中間の長さで、符号C,Dに示すノズル配管１で
は第２図（ａ）に示すようにノズル２と基板４表面との
距離はl1と長い。On the lower surface side of the substrate 4, the nozzle pipes 1 indicated by symbols A and F
In short distance between the second view nozzle 2 as shown in (c) and the substrate 4 surface and l 3, reference numeral B, the nozzle 2 and the substrate as shown in FIG. 2 in the nozzle pipe 1 shown in E (b) the distance between the fourth surface l 2 and the intermediate length, code C, the distance between the nozzle 2 and the substrate 4 surface, as shown in FIG. 2 in the nozzle pipe 1 shown in D (a) is long and l 1 .
しかして基板４の上面側では端部から中央に近付く
程、ノズル２から噴霧する薬液が強く当たり、基板４の
下面側では中央から端部に近付く程、ノズル２から噴霧
する薬液が強く当たり、基板４の上面側でも下面側でも
老化した薬液と新しい薬液との交換が均一に行われて全
面に亘って均一にエッチングが行われる。Thus, on the upper surface side of the substrate 4, the chemical liquid sprayed from the nozzle 2 hits stronger as it approaches the center from the edge, and on the lower surface side of the substrate 4, the chemical liquid sprayed from the nozzle 2 hits stronger as it approaches the edge from the center, Exchange of the aged chemical solution with a new chemical solution is performed uniformly on the upper surface side and the lower surface side of the substrate 4 so that the etching is performed uniformly over the entire surface.
実施例２ これは基板４の上面側の条件をとし、基板４の下面
側の条件を′としたものである。つまり、基板４の上
面側では端部から中央部に近付く程、ノズル２の分布密
度を高くしてあり、基板４の下面側では端部から中央部
に近付く程、ノズル２の分布密度を低くしてある。Example 2 In this example, the condition on the upper surface side of the substrate 4 was set and the condition on the lower surface side of the substrate 4 was set to '. In other words, the distribution density of the nozzles 2 is higher on the upper surface side of the substrate 4 as it approaches the center from the end, and the distribution density of the nozzles 2 is lower on the lower surface side of the substrate 4 as it approaches the center from the end. I have.
第３図は基板４の上面側のノズル２の配置を示すもの
である。符号Ａで示すノズル配管１と符号Ｂで示すノズ
ル配管１との間の間隔w1や符号Ｅで示すノズル配管１と
符号Ｆで示すノズル配管１との間隔w1は広く、符号Ｂで
示すノズル配管１と符号Ｃで示すノズル配管１との間隔
w2や符号Ｄで示すノズル配管１と符号Ｅで示すノズル配
管１との間隔w2は中間の広さで、符号Ｃで示すノズル配
管１と符号Ｄで示すノズル配管１との間隔w3は狭い。具
体的にはw1は150mm、w2は100mm、w3は50mmである。また
符号A,Fで示すノズル配管１のノズル２を設けるピッチ
が大きく、符号B,Eで示すノズル配管１のノズル２を設
けるピッチが中間で、符号C,Dで示すノズル配管１のノ
ズル２を設けるピッチが小さい。FIG. 3 shows the arrangement of the nozzles 2 on the upper surface side of the substrate 4. Interval w 1 between the nozzle pipe 1 shown in the nozzle pipe 1 and the sign F indicated by interval w 1 and code E between the nozzle pipe 1 shown in the nozzle pipe 1 and the code B shown by the symbol A is wide, indicated at B The distance between the nozzle pipe 1 and the nozzle pipe 1 indicated by the symbol C
spacing w 2 between the nozzle pipe 1 shown in the nozzle pipe 1 and code E indicated by w 2 and the symbol D in the middle of the wide spacing w 3 of the nozzle pipe 1 shown in the nozzle pipe 1 and the sign D indicated by the symbol C Is narrow. Specifically the w 1 is 150 mm, w 2 is 100 mm, w 3 is 50 mm. Also, the pitch at which the nozzles 2 of the nozzle pipe 1 indicated by reference signs A and F are large, the pitch at which the nozzles 2 of the nozzle pipe 1 indicated by reference signs B and E are intermediate, and the nozzle 2 of the nozzle pipe 1 indicated by reference signs C and D The pitch for providing is small.
第４図は基板４の下面側のノズル２の配置を示すもの
である。この場合符号Ａのノズル配管１と符号Ｂのノズ
ル配管１との間隔w1′や符号Ｅのノズル配管１と符号Ｆ
のノズル配管１との間隔w1′が狭く、符号Ｂのノズル配
管１と符号Ｃのノズル配管１との間隔w2′や符号Ｄのノ
ズル配管１と符号Ｅのノズル配管１との間隔w2′が中間
で、符号Ｃのノズル配管１と符号Ｄのノズル配管１との
間隔w3′が広い。具体的にはw1′は80mm、w2′は120m
m、w3′は150mmである。また符号A,Fで示すノズル配管
１のノズル２を設けるピッチが小さく、符号B,Eで示す
ノズル配管１のノズル２を設けるピッチが中間で、符号
C,Dで示すノズル配管１のノズル２を設けるピッチが大
きい。FIG. 4 shows the arrangement of the nozzles 2 on the lower surface side of the substrate 4. In this case, the interval w 1 ′ between the nozzle pipe 1 of the symbol A and the nozzle pipe 1 of the symbol B, and the nozzle pipe 1 of the symbol E and the symbol F
The distance w 1 ′ between the nozzle pipe 1 of the symbol B and the nozzle pipe 1 of the symbol C is narrow, and the distance w 2 ′ between the nozzle pipe 1 of the symbol C and the nozzle pipe 1 of the symbol E is w. 2 ′ is intermediate, and the distance w 3 ′ between the nozzle pipe 1 of the symbol C and the nozzle pipe 1 of the symbol D is wide. Specifically, w 1 ′ is 80 mm, w 2 ′ is 120 m
m and w 3 ′ are 150 mm. Further, the pitch at which the nozzles 2 of the nozzle pipe 1 indicated by reference signs A and F are small, and the pitch at which the nozzles 2 of the nozzle pipe 1 indicated by reference signs B and E are medium.
The pitch at which the nozzles 2 of the nozzle pipe 1 indicated by C and D are provided is large.
しかして基板４の上面側では端部から中央に近付く
程、ノズル２から噴霧する薬液が集中して当たり、基板
４の下面側では中央から端部に近付く程、ノズル２から
噴霧する薬液が集中して当たり、基板４の上面側でも下
面側でも老化した薬液と新しい薬液との交換が均一に行
われて全面に亘って均一にエッチングが行われる。Thus, on the upper surface side of the substrate 4, the chemical liquid sprayed from the nozzle 2 concentrates as it approaches the center from the edge, and on the lower surface side of the substrate 4, the chemical liquid sprayed from the nozzle 2 concentrates as it approaches the edge from the center. At the same time, the exchange between the aged chemical solution and the new chemical solution is performed uniformly on both the upper surface side and the lower surface side of the substrate 4, and the etching is performed uniformly over the entire surface.
実施例３ これは基板４の上面側の条件をとし、基板４の下面
側の条件を′としたものである。つまり、基板４の上
面側では端部から中央部に近付く程、ノズル２のスプレ
ー圧力を大きくしてあり、基板４の下面側では端部から
中央部に近付く程、ノズル２のスプレー圧力を小さくし
てある。Embodiment 3 This is a condition in which the condition on the upper surface side of the substrate 4 is set and the condition on the lower surface side of the substrate 4 is set to '. That is, the spray pressure of the nozzle 2 is increased on the upper surface side of the substrate 4 as it approaches the center from the end, and the spray pressure of the nozzle 2 is decreased on the lower surface of the substrate 4 as it approaches the center from the end. I have.
基板４の上面側では第５図の符号C,Dに示すノズル配
管１のノズル２からのスプレー圧力は高く、例えば2Kg/
cm2である。符号B,Eに示すノズル配管１のノズル２から
のスプレー圧力は中間で、例えば1.5Kg/cm2である。符
号A,Fで示すノズル配管１のノズル２からのスプレー圧
力は低く、例えば1Kg/cm2である。On the upper surface side of the substrate 4, the spray pressure from the nozzle 2 of the nozzle pipe 1 shown by reference numerals C and D in FIG.
It is cm 2. The spray pressure from the nozzle 2 of the nozzle pipe 1 indicated by reference characters B and E is intermediate, for example, 1.5 kg / cm 2 . The spray pressure from the nozzle 2 of the nozzle pipe 1 indicated by reference signs A and F is low, for example, 1 kg / cm 2 .
基板４の下面では符号A,Fで示すノズル配管１のノズ
ル２のスプレー圧力が高く、例えば2Kg/cm2である。符
号B,Eで示すノズル配管１のノズル２のスプレー圧力が
中間で、例えば1.8Kg/cm2である。符号C,Dに示すノズル
配管１のノズル２のスプレー圧力が低く、例えば1.5Kg/
cm2である。On the lower surface of the substrate 4, the spray pressure of the nozzle 2 of the nozzle pipe 1 indicated by reference characters A and F is high, for example, 2 kg / cm 2 . The spray pressure of the nozzle 2 of the nozzle pipe 1 indicated by reference characters B and E is intermediate, for example, 1.8 kg / cm 2 . The spray pressure of the nozzle 2 of the nozzle pipe 1 indicated by reference signs C and D is low, for example, 1.5 kg /
It is cm 2.
しかして基板４の上面側では端部から中央に近付く
程、ノズル２から噴霧する薬液が強く当たり、基板４の
下面側では中央から端部に近付く程、ノズル２から噴霧
する薬液が強く当たり、基板４の上面側でも下面側でも
老化した薬液と新しい薬液との交換が均一に行われて全
面に亘って均一にエッチングが行われる。Thus, on the upper surface side of the substrate 4, the chemical liquid sprayed from the nozzle 2 hits stronger as it approaches the center from the edge, and on the lower surface side of the substrate 4, the chemical liquid sprayed from the nozzle 2 hits stronger as it approaches the edge from the center, Exchange of the aged chemical solution with a new chemical solution is performed uniformly on the upper surface side and the lower surface side of the substrate 4 so that the etching is performed uniformly over the entire surface.
実施例４ これは基板４の上面側の条件をとし、基板４の下面
側の条件を′としたものである。つまり、基板４の上
面側では端部から中央部に近付く程、流量の大きいノズ
ル２を使用しており、基板４の下面側では端部から中央
部に近付く程、流量の小さいノズル２を使用している。Embodiment 4 This is a condition in which the condition on the upper surface side of the substrate 4 is set and the condition on the lower surface side of the substrate 4 is set as'. That is, the nozzle 2 having a larger flow rate is used on the upper surface side of the substrate 4 as it approaches the center from the end, and the nozzle 2 with a smaller flow rate is used on the lower surface side of the substrate 4 as it approaches the center from the end. doing.
基板４の上面側では第６図の符号C,Dに示すノズル配
管１のノズル２の流量が多く、例えば８/minである。
符号B,Eに示すノズル配管１のノズル２の流量が中間
で、例えば６/minである。符号A,Fで示すノズル配管
１のノズル２の流量は少なく、例えば４/minである。On the upper surface side of the substrate 4, the flow rate of the nozzle 2 of the nozzle pipe 1 indicated by reference numerals C and D in FIG. 6 is large, for example, 8 / min.
The flow rate of the nozzle 2 of the nozzle pipe 1 indicated by reference numerals B and E is intermediate, for example, 6 / min. The flow rate of the nozzle 2 of the nozzle pipe 1 indicated by reference signs A and F is small, for example, 4 / min.
基板４の下面側では符号A,Fに示すノズル配管１のノ
ズル２の流量は多く、例えば８/minである。符号B,E
で示すノズル配管１のノズル２の流量は中間で、例えば
７/minである。符号C,Dで示すノズル配管１のノズル
２の流量は少なく、例えば６/minである。On the lower surface side of the substrate 4, the flow rate of the nozzle 2 of the nozzle pipe 1 indicated by reference signs A and F is large, for example, 8 / min. Code B, E
The flow rate of the nozzle 2 of the nozzle pipe 1 is intermediate, for example, 7 / min. The flow rate of the nozzle 2 of the nozzle pipe 1 indicated by reference numerals C and D is small, for example, 6 / min.
しかして基板４の上面側では端部から中央に近付く
程、ノズル２から噴霧する薬液が多く当たり、基板４の
下面側では中央から端部に近付く程、ノズル２から噴霧
する薬液が多く当たり、基板４の上面側でも下面側でも
老化した薬液と新しい薬液との交換が均一に行われて全
面に亘って均一にエッチングが行われる。Thus, on the upper surface side of the substrate 4, the chemical liquid sprayed from the nozzle 2 hits more as it approaches the center from the end, and on the lower surface side of the substrate 4, the chemical liquid sprayed from the nozzle 2 hits more as it approaches the end from the center, Exchange of the aged chemical solution with a new chemical solution is performed uniformly on the upper surface side and the lower surface side of the substrate 4 so that the etching is performed uniformly over the entire surface.
実施例５ これは基板４の上面側の条件をとし、基板４の下面
側の条件を′したものである。つまり、基板４の上面
側では端部から中央部に近付く程、ノズル２のスプレー
口と基板４表面との距離を短くすると共にノズル２の分
布密度を高くしており、基板４の下面側では端部から中
央部に近付く程、ノズル２のスプレー口と基板４表面と
の距離を長くすると共にノズル２の分布密度を低くして
いる。Fifth Embodiment This is based on the condition of the upper surface of the substrate 4 and the condition of the lower surface of the substrate 4. That is, on the upper surface side of the substrate 4, the distance between the spray port of the nozzle 2 and the surface of the substrate 4 is shortened and the distribution density of the nozzles 2 is increased as the distance from the end to the center increases. As the distance from the end to the center increases, the distance between the spray port of the nozzle 2 and the surface of the substrate 4 increases, and the distribution density of the nozzle 2 decreases.
基板４の上面側では第７図（ａ）に示すように端部か
ら中央部に近付く程、ノズル配管１の間隔がw1,w2,w3と
小さくなっている。具体的にはw1は150mm、w2は100mm、
w3は50mmである。また端部のノズル配管１から中央部の
ノズル配管１に向けてノズル２を設けるピッチが小さく
なっている。しかも符号A,Fに示すノズル配管１のノズ
ル２のスプレー口と基板４との間の距離は第８図（ａ）
に示すようにl1と長く、符号B,Eに示すノズル配管１の
ノズル２のスプレー口と基板４との距離は第８図（ｂ）
に示すようにl2と中間の長さで、符号C,Dに示すノズル
配管１のノズル２のスプレー口と基板４との距離は第８
図（ｃ）に示すようにl3と短い。具体的にはl1が150m
m、l2が100mm、l3が90mmである。Is a top side of the substrate 4 enough to approach the central portion from the end portion as shown in Figure No. 7 (a), the interval of nozzle pipes 1 becomes small as w 1, w 2, w 3 . The w 1 Specifically 150mm, w 2 is 100mm,
w 3 is 50 mm. The pitch at which the nozzles 2 are provided from the nozzle pipe 1 at the end to the nozzle pipe 1 at the center is small. In addition, the distance between the spray port of the nozzle 2 of the nozzle pipe 1 and the substrate 4 indicated by reference numerals A and F and the substrate 4 are shown in FIG.
As long as l 1, as shown in, the distance of the code B, the spray opening and the substrate 4 of the nozzle 2 of the nozzle pipe 1 shown in E eighth diagram (b)
In the l 2 and an intermediate length as shown in, the code C, the distance between the spray orifice and the substrate 4 of the nozzle 2 of the nozzle pipe 1 shown in D eighth
Short and l 3 as shown in FIG. (C). Specifically, l 1 is 150m
m, l 2 is 100 mm, l 3 is 90 mm.
基板４の下面側では第７図（ｂ）に示すように端部か
ら中央部に近付く程、ノズル配管１の間隔がw1′,w2′w
3′と大きくなっている。具体的にはw1′は80mm、w2′
は120mm、w3′は150mmである。また端部のノズル配管１
から中央部のノズル配管１に向けてノズル２を設けるピ
ッチが大きくなっている。しかも符号C,Dに示すノズル
配管１のノズル２のスプレー口と基板４との間の距離は
第８図（ａ）に示すようにl1と長く、符号B,Eに示すノ
ズル配管１のノズル２のスプレー口と基板４との距離は
第８図（ｂ）に示すようにl2と中間の長さで、符号A,F
に示すノズル配管１のノズル２のスプレー口と基板４と
の距離は第８図（ｃ）に示すようにl3と短い。Extent in the lower surface side of the substrate 4 to approach the central portion from the end portion as shown in Figure No. 7 (b), w 1 nozzle spacing pipe 1 ', w 2' w
3 'is large. Specifically, w 1 ′ is 80 mm, w 2 ′
Is 120 mm and w 3 ′ is 150 mm. Nozzle piping 1 at the end
The pitch at which the nozzles 2 are provided toward the nozzle pipe 1 at the center from the center is increased. Moreover code C, the distance between the spray orifice and the substrate 4 of the nozzle 2 of the nozzle pipe 1 shown in D is as long as l 1, as shown in Figure No. 8 (a), reference numeral B, the nozzle pipe 1 shown in E the distance between the spray orifice and the substrate 4 of the nozzle 2 in the length of the intermediate and l 2 as shown in Figure No. 8 (b), reference numeral a, F
The distance between the spray orifice and the substrate 4 of the nozzle 2 of the nozzle pipe 1 shown in the short and l 3 as shown in Figure No. 8 (c).
しかして基板４の上面側では端部から中央に近付く
程、ノズル２から噴霧する薬液が強く当たると共に集中
して当たり、基板４の下面側では中央から端部に近付く
程、ノズル２から噴霧する薬液が強く当たると共に集中
して当たり、基板４の上面側でも下面側でも老化した薬
液と新しい薬液との交換が均一に行われて全面に亘って
均一にエッチングが行われる。On the upper surface side of the substrate 4, the chemical liquid sprayed from the nozzle 2 hits and concentrates as it approaches the center from the end portion, and sprays from the nozzle 2 on the lower surface side of the substrate 4 as it approaches the end portion from the center. The chemical solution is strongly applied and concentrated and hits, and the aged chemical solution and the new chemical solution are uniformly exchanged on the upper surface side and the lower surface side of the substrate 4 so that the entire surface is uniformly etched.
実施例６ これは基板４の上面側の条件をとし、基板４の下面
側の条件を′としたものである。つまり、基板４の上
面側では端部から中央部に近付く程、ノズル２のスプレ
ー口と基板４表面との距離を短くすると共にノズル２の
スプレー圧力を大きくしており、基板４の下面側では端
部から中央部に近付く程、ノズル２のスプレー口と基板
４表面との距離を長くすると共にノズル２のスプレー圧
力を小さくしている。Example 6 This is a condition in which the condition on the upper surface side of the substrate 4 is set and the condition on the lower surface side of the substrate 4 is set to '. That is, on the upper surface side of the substrate 4, as the distance from the end to the center increases, the distance between the spray port of the nozzle 2 and the surface of the substrate 4 is shortened and the spray pressure of the nozzle 2 is increased. As the distance from the end to the center increases, the distance between the spray port of the nozzle 2 and the surface of the substrate 4 increases, and the spray pressure of the nozzle 2 decreases.
基板４の上面側では第９図の符号A,Fに示すノズル配
管１のノズル２のスプレー口と基板４との間の距離は第
10図（ａ）に示すようにl1と長く、符号B,Eに示すノズ
ル配管１のノズル２のスプレー口と基板４との距離は第
10図（ｂ）に示すようにl2と中間の長さで、符号C,Dに
示すノズル配管１のノズル２のスプレー口と基板４との
距離は第10図（ｃ）に示すようにl3と短い。具体的には
l1が150mm、l2が120mm、l3が90mmである。しかも符号A,
Fに示すノズル配管１のノズル２からのスプレー圧力は
小さく、具体的に1Kg/cm2であり、符号B,Eに示すノズル
配管１のノズル２からのスプレー圧力は中間で、具体的
には1.2Kg/cm2であり、符号C,Dに示すノズル配管１のノ
ズル２からのスプレー圧力は高く、具体的には1.5Kg/cm
2である。On the upper surface side of the substrate 4, the distance between the spray port of the nozzle 2 of the nozzle pipe 1 and the substrate 4 indicated by reference characters A and F in FIG.
10 view as long as l 1 (a), the distance of the code B, the spray opening and the substrate 4 of the nozzle 2 of the nozzle pipe 1 shown in E Chapter
10 view (b) as shown in l 2 and intermediate lengths, code C, the distance between the spray orifice and the substrate 4 of the nozzle 2 of the nozzle pipe 1 shown in D, as shown in Figure No. 10 (c) l 3 and short. In particular
l 1 is 150 mm, l 2 is 120 mm, l 3 is 90 mm. Moreover, the sign A,
The spray pressure from the nozzle 2 of the nozzle pipe 1 shown in F is small, specifically, 1 kg / cm 2 , and the spray pressure from the nozzle 2 of the nozzle pipe 1 shown in symbols B and E is intermediate, specifically, The spray pressure from the nozzle 2 of the nozzle pipe 1 indicated by reference numerals C and D is high, specifically 1.5 kg / cm 2.
2
基板４の下面側では第９図の符号C,Dに示すノズル配
管１のノズル２のスプレー口と基板４との間の距離は第
10図（ａ）に示すようにl1と長く、符号B,Eに示すノズ
ル配管１のノズル２のスプレー口と基板４との距離は第
10図（ｂ）に示すようにl2と中間の長さで、符号A,Fに
示すノズル配管１のノズル２のスプレー口と基板４との
距離は第10図（ｃ）に示すようにl3と短い。しかも符号
C,Dに示すノズル配管１のノズル２からのスプレー圧力
は小さく、具体的には1Kg/cm2であり、符号B,Eに示すノ
ズル配管１のノズル２からのスプレー圧力は中間で、具
体的に1.1Kg/cm2であり、符号A,Fに示すノズル配管１の
ノズル２からのスプレー圧力は高く、具体的には1.2Kg/
cm2である。On the lower surface side of the substrate 4, the distance between the spray port of the nozzle 2 of the nozzle pipe 1 and the substrate 4 indicated by reference numerals C and D in FIG.
10 view as long as l 1 (a), the distance of the code B, the spray opening and the substrate 4 of the nozzle 2 of the nozzle pipe 1 shown in E Chapter
10 view (b) as shown in l 2 and intermediate lengths, code A, the distance between the spray orifice and the substrate 4 of the nozzle 2 of the nozzle pipe 1 shown in F, as shown in Figure No. 10 (c) l 3 and short. And the sign
The spray pressure from the nozzle 2 of the nozzle pipe 1 shown in C and D is small, specifically, 1 kg / cm 2 , and the spray pressure from the nozzle 2 of the nozzle pipe 1 shown in reference signs B and E is intermediate. The spray pressure from the nozzle 2 of the nozzle pipe 1 indicated by reference signs A and F is high, specifically, 1.2 kg / cm 2.
It is cm 2.
しかして基板４の上面側では端部から中央に近付く
程、ノズル２から噴霧する薬液が強く当たり、基板４の
下面側では中央から端部に近付く程、ノズル２から噴霧
する薬液が強く当たり、基板４の上面側でも下面側でも
老化した薬液と新しい薬液との交換が均一に行われて全
面に亘って均一にエッチングが行われる。Thus, on the upper surface side of the substrate 4, the chemical liquid sprayed from the nozzle 2 hits stronger as it approaches the center from the edge, and on the lower surface side of the substrate 4, the chemical liquid sprayed from the nozzle 2 hits stronger as it approaches the edge from the center, Exchange of the aged chemical solution with a new chemical solution is performed uniformly on the upper surface side and the lower surface side of the substrate 4 so that the etching is performed uniformly over the entire surface.
［発明の効果］ 本発明は叙述の如く搬送コンベアの上面側では搬送コ
ンベアの駆動方向と直交する方向の端部から中央部に近
付く程、ノズルのスプレー口と基板表面との距離を短く
したり、ノズル分布密度を高くしたり、ノズルのスプレ
ー圧力を大きくしたり、流量の大きいノズルを使用した
りして薬液が強く或は多量に基板に当たる条件で噴霧す
るので、基板の上面の中央部での薬液の交換の促進がさ
れ、基板の上面の全面に亘って均一な薬液の交換がされ
て基板上面でのエッチングや現像が均一に行われ、また
搬送コンベアの下面側では搬送コンベアの駆動方向と直
交する方向の端部から中央部に近付く程、ノズルのスプ
レー口と基板表面との距離を長くしたり、ノズル分布密
度を低くしたり、ノズルのスプレー圧力を小さくした
り、流量の小さいノズルを使用したりして薬液が弱く或
は少量で基板に当たる条件で噴霧するので、基板の下面
の端部での薬液の交換が促進され、基板の下面の全面に
亘って均一な薬液の交換されて基板下面でのエッチング
や現像が均一に行われ、基板の上下両面ともにエッチン
グや現像が均一に行われるものである。[Effect of the Invention] As described above, the present invention shortens the distance between the spray port of the nozzle and the substrate surface from the end in the direction orthogonal to the driving direction of the conveyor on the upper surface side of the conveyor as approaching the center. The chemicals are sprayed under the condition that the chemical solution is strong or a large amount hits the substrate by increasing the nozzle distribution density, increasing the nozzle spray pressure, or using a nozzle with a large flow rate. The exchange of the chemical solution is promoted, the chemical solution is uniformly exchanged over the entire upper surface of the substrate, and the etching and development on the upper surface of the substrate are uniformly performed, and the driving direction of the transport conveyor on the lower surface side of the transport conveyor. As the distance from the end in the direction orthogonal to the center to the center increases, the distance between the nozzle spray port and the substrate surface increases, the nozzle distribution density decreases, the nozzle spray pressure decreases, The chemical solution is sprayed under a condition in which the chemical solution is weak or small and hits the substrate by using a small amount of nozzle, so that the exchange of the chemical solution at the end of the lower surface of the substrate is promoted, and the uniformity is obtained over the entire lower surface of the substrate. The etching and development on the lower surface of the substrate are performed uniformly by exchanging the chemical solution, and the etching and development are performed uniformly on both the upper and lower surfaces of the substrate.
第１図は本考案の実施例１を説明する平面図、第２図
（ａ）（ｂ）（ｃ）は同上のノズルのスプレー口と基板
の距離を説明する正面図、第３図は同上の実施例２の基
板上面側のノズル配置を示す平面図、第４図は同上の実
施例２の基板下面側のノズル配置を示す平面図、第５図
は同上の実施例３を説明する平面図、第６図は同上の実
施例４を説明する平面図、第７図（ａ）は同上の実施例
５の基板上面側のノズル配置を示す平面図、第７図
（ｂ）は同上の実施例５の基板下面側のノズル配置を示
す平面図、第８図（ａ）（ｂ）（ｃ）は同上の実施例５
のノズルのスプレー口と基板の距離を説明する正面図、
第９図は同上の実施例６を説明する平面図、第10図
（ａ）（ｂ）（ｃ）は同上の実施例６のノズルのスプレ
ー口と基板の距離を説明する正面図、第11図（ａ）
（ｂ）従来例の問題を説明する断面図であって、１はノ
ズル配管、２はノズル、４は基板、５は搬送コンベアで
ある。FIG. 1 is a plan view illustrating a first embodiment of the present invention, FIGS. 2 (a), 2 (b) and 2 (c) are front views illustrating a distance between a spray port of a nozzle and a substrate, and FIG. FIG. 4 is a plan view showing the nozzle arrangement on the upper surface side of the substrate according to the second embodiment, FIG. 4 is a plan view showing the nozzle arrangement on the lower surface side of the substrate according to the second embodiment, and FIG. FIG. 6, FIG. 6 is a plan view for explaining Embodiment 4 of the above, FIG. 7 (a) is a plan view showing a nozzle arrangement on the upper surface side of the substrate of Embodiment 5 of the above, and FIG. 8 (a), 8 (b) and 8 (c) are plan views showing the nozzle arrangement on the lower surface side of the substrate according to the fifth embodiment.
Front view illustrating the distance between the spray port of the nozzle and the substrate,
FIG. 9 is a plan view for explaining Embodiment 6 of the embodiment, and FIGS. 10 (a), (b) and (c) are front views for explaining the distance between the spray port of the nozzle and the substrate of Embodiment 6 of the embodiment. Figure (a)
(B) is a cross-sectional view for explaining the problem of the conventional example, where 1 is a nozzle pipe, 2 is a nozzle, 4 is a substrate, and 5 is a conveyor.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 白木 啓之 大阪府門真市大字門真1048番地 松下電 工株式会社内 (72)発明者 兼子 醇治 大阪府門真市大字門真1048番地 松下電 工株式会社内 (56)参考文献 特開 平２−90600（ＪＰ，Ａ) 実開 平２−51262（ＪＰ，Ｕ) 実公 昭62−15238（ＪＰ，Ｙ２) ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Hiroyuki Shiraki 1048 Kazuma Kadoma, Kadoma City, Osaka Prefecture Inside Matsushita Electric Works, Ltd. (72) Inventor Junji Kaneko 1048 Kadoma Kadoma, Kadoma City, Osaka Prefecture (56) References JP-A-2-90600 (JP, A) JP-A-2-51262 (JP, U) JP-A-62-15238 (JP, Y2)
Claims (1)
ベアに基板を載せてノズルから薬液を噴霧しながら基板
を移動してエッチングまたは現像をする方法において、
搬送コンベアの上面側では搬送コンベアの駆動方向と直
交する方向の端部から中央部に近付く程、ノズルのスプ
レー口と基板表面との距離を短くしたり、ノズル分布密
度を高くしたり、ノズルのスプレー圧力を大きくした
り、流量の大きいノズルを使用したりして薬液が強く或
は多量に基板に当たる条件で噴霧し、また搬送コンベア
の下面側では搬送コンベアの駆動方向と直交する方向の
端部から中央部に近付く程、ノズルのスプレー口と基板
の表面との距離を長くしたり、ノズル分布密度を低くし
たり、ノズルのスプレー圧力を小さくしたり、流量の小
さいノズルを使用したりして薬液が弱く或は少量の基板
に当たる条件で噴霧することを特徴とするエッチング並
びに現像方法。1. A method for etching or developing by moving a substrate while spraying a chemical solution from a nozzle while placing the substrate on a conveyor of an etching device or a developing device,
On the upper surface side of the conveyor, as the distance from the end in the direction orthogonal to the driving direction of the conveyor toward the center increases, the distance between the nozzle spray port and the substrate surface decreases, the nozzle distribution density increases, Increase the spray pressure or use a nozzle with a large flow rate to spray the chemical under conditions in which the chemical solution is strong or a large amount hits the substrate.On the lower surface side of the conveyor, the end in the direction perpendicular to the driving direction of the conveyor From the center to the center, increase the distance between the nozzle spray port and the surface of the substrate, reduce the nozzle distribution density, reduce the nozzle spray pressure, or use a nozzle with a small flow rate. An etching and developing method characterized in that a chemical solution is sprayed under a condition that the solution is weak or hits a small amount of a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2158001A JP2573396B2 (en) | 1990-06-15 | 1990-06-15 | Etching and developing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2158001A JP2573396B2 (en) | 1990-06-15 | 1990-06-15 | Etching and developing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0448085A JPH0448085A (en) | 1992-02-18 |
| JP2573396B2 true JP2573396B2 (en) | 1997-01-22 |
Family
ID=15662085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2158001A Expired - Fee Related JP2573396B2 (en) | 1990-06-15 | 1990-06-15 | Etching and developing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2573396B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100943681B1 (en) * | 2001-11-05 | 2010-02-22 | 게부르. 쉬미트 게엠베하 운트 코. | Method and device for treating objects by means of a liquid |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07231155A (en) | 1994-02-16 | 1995-08-29 | Fujitsu Ltd | Etching device and etching method for printed wiring board |
| TW579664B (en) * | 2000-01-11 | 2004-03-11 | Matsushita Electric Ind Co Ltd | Apparatus and method for manufacturing printed circuit board |
| JP4899337B2 (en) * | 2005-05-09 | 2012-03-21 | 凸版印刷株式会社 | Development device |
| US8177993B2 (en) * | 2006-11-05 | 2012-05-15 | Globalfoundries Singapore Pte Ltd | Apparatus and methods for cleaning and drying of wafers |
| DE102010013909A1 (en) * | 2010-04-01 | 2011-10-06 | Lp Vermarktungs Gmbh & Co. Kg | Apparatus and method for spraying a surface of a substrate |
| KR101386677B1 (en) * | 2012-10-30 | 2014-04-29 | 삼성전기주식회사 | An manufacturing for microcircuit board |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6215238U (en) * | 1985-07-10 | 1987-01-29 | ||
| JPH0290600A (en) * | 1988-09-28 | 1990-03-30 | Hitachi Ltd | Printed board surface treating device |
-
1990
- 1990-06-15 JP JP2158001A patent/JP2573396B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100943681B1 (en) * | 2001-11-05 | 2010-02-22 | 게부르. 쉬미트 게엠베하 운트 코. | Method and device for treating objects by means of a liquid |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0448085A (en) | 1992-02-18 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |