JP2572645B2 - Heat dissipation structure of semiconductor device - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a heat dissipation structure of a film carrier type, that is, a TAB type semiconductor device.

2. Description of the Related Art In general, a semiconductor device attaches a semiconductor chip to a die pad provided on a lead frame, connects an external electrode of the semiconductor chip to a terminal of the lead frame by respective wires, and connects the external electrode with, for example, an epoxy resin. After packaging with thermosetting resin, each terminal is cut and manufactured.

By the way, recently, with the miniaturization and thinning of electronic devices, semiconductor devices used for them are also mounted at high density.
A thin and small semiconductor device is desired instead of a thick and relatively large conventional semiconductor device. In order to meet such a demand, a semiconductor chip 6 is provided in a device hole of the carrier tape 1. A semiconductor device D in which the electrodes 4 of the semiconductor chip 6 and the bumps provided on the inner leads 3 of the carrier tape 1 are directly connected, and a sealing agent made of a liquid resin (for example, an epoxy resin) is printed or potted and packaged. Is used.

The TAB type semiconductor device D manufactured as described above is, for example, as shown in FIG.
After mounting the active surface toward the printed wiring board 10 side and soldering the inner lead 3 and the conductive pattern 11 formed on the surface of the printed wiring board 10, respectively, the periphery of the semiconductor chip 6 and the squeegee printing or potting are used. The conductive pattern 11 is sealed with a sealing agent 12 such as an epoxy resin.

In this way, the heat radiation of the TAB type semiconductor device D mounted on the printed wiring board 10 is performed on the surface exposed to the outside opposite to the active surface of the semiconductor chip 6.

[Problem to be Solved by the Invention] In the semiconductor device D mounted on the printed wiring board 10 described above, when the semiconductor chip 6 is, for example, a CMOS SRAM, if the driving frequency is about 2 MHz, the power consumption is about 70 mW. Therefore, the heat generated by the semiconductor chip 6 itself is
Although the temperature rise can be suppressed by radiating heat from the surface exposed to the outside opposite to the active surface of the CMOS, even if it is a CMOS SRAM, if the driving frequency is 10 MHz, the power consumption will be about 350
mW, and the heat radiation by the semiconductor chip 6 itself was insufficient.

In addition, as a recently developed semiconductor chip 6, pseudo-SRAM has approximately five times as much heat generation as SRAM among CMOS.
In the case of an NMOS DRAM, the amount of heat generated is 10 to 20 times that of a CMOS SRAM, so that there is a problem that the semiconductor chip 6 that can be used is limited.

The present invention has been made to solve the above-described problems, and has as its object to obtain a heat dissipation structure of a semiconductor device which consumes a large amount of power and can be used even for a semiconductor chip which generates high self-heating.

[Means for Solving the Problems] A heat dissipation structure of a semiconductor device according to the present invention includes a substrate on which a conductive pattern is provided, and N TABs each of which has a semiconductor chip and is disposed on the substrate. A semiconductor device, an adhesive resin having good insulation and thermal conductivity applied to a surface of the semiconductor chip not facing the substrate, and M (N ≠ M, N> M) disposed on the substrate; A heat dissipation structure of a semiconductor device having a heat dissipation medium, wherein each of the heat dissipation media is connected to two adjacent TAB type semiconductor devices via the adhesive resin, and the heat dissipation medium of the semiconductor chip is provided. Is formed from a surface having an area larger than the area of the surface opposed to.

[Function] In the present invention, each of the heat dissipation media is connected to two adjacent TAB semiconductor devices via an adhesive resin having good insulation and heat conductivity, and faces the heat dissipation media of the semiconductor chip. Since it is composed of a surface having an area larger than the area of the surface, the heat generated from the self-heating of each semiconductor chip of two adjacent TAB type semiconductor devices was connected to the two semiconductor chips via the adhesive resin. The heat is dissipated to one heat dissipation medium, and the heat dissipation medium having a larger heat dissipation area than the two semiconductor chips and a good heat dissipation effect radiates heat to the surrounding spaces, thereby suppressing a temperature rise of the semiconductor chip.

Also, each two adjacent TAs mounted on the board
The heat dissipation of each semiconductor chip of the B-type semiconductor device is dispersed by one heat dissipation medium, and one heat dissipation medium equalizes the heat of the semiconductor chips of the two semiconductor devices shared respectively.

FIG. 1 is a sectional view of an embodiment of the present invention. In the figure, the same components as those of the conventional example are denoted by the same reference numerals, and the description of the duplicated components will be omitted. Reference numeral 15 denotes a room-temperature-curable adhesive resin such as a silicon-based resin having good insulation and thermal conductivity, which is applied by printing or potting to a surface exposed to the outside of the semiconductor chip 6 opposite to the active surface. This adhesive resin 15
On the other hand, two metal plates 16 serving as a heat dissipation medium are mounted on the surface of the semiconductor chip 6 opposite to the active surface.

In the heat dissipation structure of the semiconductor device having the above-described configuration, when the temperature rise due to the self-heating of the semiconductor chip 6 occurs, the heat is transmitted to each metal plate 16 via the adhesive resin 15 having better thermal conductivity than the semiconductor chip 6. Propagation, the two metal plates 16 have a larger heat dissipation area than the semiconductor chip 6, and dissipate into the surrounding space having better insulation and heat conductivity than these metal plates 16,
Heat dissipation efficiency has increased.

Therefore, even in the case of a semiconductor device having a semiconductor chip 6 with power consumption of, for example, 300 mW or more, the temperature is maintained within the rated temperature range, and the device does not change its characteristics while enduring long-term continuous driving.

FIG. 2 is a sectional view of another embodiment of the present invention, and FIG. 3 is a plan view of a printed wiring board on which the semiconductor device of the embodiment is mounted.

In this embodiment, twelve TAB semiconductor devices D are mounted on a printed wiring board 10. In FIG. 3, one metal plate 6 having a larger surface area than the two semiconductor chips straddles the surface of the semiconductor chips 6 of the two semiconductor devices D that are adjacent to each other in the left-right direction and does not face the printed wiring board 10. Are respectively attached with adhesive resin 15.

That is, in FIG. 3, three TAB semiconductor devices D mounted on the printed wiring board 10 from the upper left side.
For example, as a first, second and third TAB type semiconductor device, the first and second TAB type semiconductor devices D may have a first chip having a larger surface area than the two semiconductor chips via the adhesive resin 15 on the semiconductor chip 6. The metal plate 6 serving as a heat dissipation medium is connected to the semiconductor chip 6 of the second and third TAB type semiconductor devices D via the adhesive resin 15 so as to have a larger surface area than the two semiconductor chips 6 and the first heat sink. The metal plate 6 as the second heat dissipation medium is connected independently of the metal plate 6 as the heat dissipation medium. As described above, two adjacent semiconductor devices D share one metal plate 6, and one metal plate 6 radiates heat of the semiconductor chips 6 of the two semiconductor devices D.

Thus, in the embodiment shown in FIG. 3, one metal plate 16 serving as a heat dissipation medium is attached across the semiconductor chips 6 of two adjacent semiconductor devices D, and one metal plate 16 is composed of two semiconductor chips. Since the surface area is larger than the area of the surface of the chip 6 facing the metal plate 16, the heat radiation efficiency can be improved and high-density mounting is possible.

Note that the following relationship is established between the plurality of semiconductor devices D having the semiconductor chip 6 and the metal plate 16, where N is the number of semiconductor devices D and M is the number of metal plates 16.

N ≠ M, N> M Further, at the time of mounting, since the number of the metal plates 16 as the heat dissipation medium is reduced, the production can be simplified.

Further, since the metal plate 16 as the heat dissipation medium is located on the uppermost layer with respect to the printed wiring board 10, the TAB type semiconductor device D can be easily mounted on the printed wiring board without the metal plate 16 as the heat dissipation medium being disturbed. Can be implemented in 10. Moreover, the metal plate 16 as the heat dissipation medium can be easily removed later from the time of mounting the TAB type semiconductor device D on the printed wiring board 10 to the time of inspection.

Thus, the embodiment shown in FIG.
One semiconductor device D shares one metal plate 6, one metal plate 16 disperses and dissipates the heat of the semiconductor chips 6 of the two semiconductor devices D, and furthermore, each metal plate 16 shares the metal plate 16. In order to make the heat of the semiconductor chip 6 of the semiconductor device D uniform,
Since the stress generated by the difference in the coefficient of thermal expansion between the printed wiring board 10 and the metal plate 16 is hardly applied to the semiconductor device D, the warpage generated in the printed wiring board can be minimized. In the embodiment shown in FIG. 3, the adhesive resin 15 is arranged so that one metal plate 6 extends over the semiconductor chips 6 of two semiconductor devices D adjacent to each other in the left-right direction.
Each of the two semiconductor devices D may be attached so that one metal plate 6 straddles the semiconductor chips 6 of two semiconductor devices D adjacent to each other in the vertical direction. What is necessary is just to share the two metal plates 6.

[Effects of the Invention] As described above, according to the present invention, each of the heat dissipation media is connected to two adjacent TAB type semiconductor devices via an adhesive resin having good insulation and heat conductivity, Since the semiconductor chip is composed of a surface having an area larger than the area of the surface facing the heat dissipation medium of the semiconductor chip, the heat generated by the self-heating of each semiconductor chip of the two adjacent TAB type semiconductor devices removes the adhesive resin. Then, the heat is transmitted to one heat dissipation medium connected to the two semiconductor chips, and the heat is dissipated to the surrounding space from one heat dissipation medium having a larger heat dissipation area than the two semiconductor chips and a good heat dissipation effect. Efficiency is improved and semiconductor chips with high self-heating can be used.Since the heat dissipation medium is located on the top layer with respect to the board, the semiconductor device can be easily mounted on the board without disturbing the heat dissipation medium. It has the effect of cutting.

Also, two adjacent TABs mounted on the board
The heat radiation of each semiconductor chip of the semiconductor device is dispersed by one heat dissipating medium, and one heat dissipating medium equalizes the heat of the semiconductor chips of the two shared semiconductor devices. Since the stress generated by the difference in the coefficient of thermal expansion is hardly applied to the semiconductor device, there is an effect that the warpage generated in the substrate can be minimized.

[Brief description of the drawings]

1 is a sectional view of an embodiment of the present invention, FIG. 2 is a sectional view of another embodiment of the present invention, FIG. 3 is a plan view of a printed circuit board on which the semiconductor device of the embodiment is mounted, and FIG. FIG. 1 is a sectional view showing a heat dissipation structure of a conventional semiconductor device. 1 ... Carrier tape, 3 ... Inner lead, 6 ...
Semiconductor chip, 10 is a printed wiring board, 11 is a conductive pattern, 12 is a sealant, 15 is an adhesive resin, 16 is a metal plate (heat dissipating medium).

Claims (1)

(57) [Claims] A substrate provided with a conductive pattern; N TAB semiconductor devices each having a semiconductor chip disposed on the substrate; and a surface of the semiconductor chip not facing the substrate. A heat dissipation structure for a semiconductor device, comprising: an adhesive resin having good insulation and heat conductivity to be applied; and M (N ≠ M, N> M) heat dissipation media disposed on the substrate, Each of the heat dissipation media is connected to two adjacent TAB type semiconductor devices via the adhesive resin, and has a larger area than a surface of the semiconductor chip facing the heat dissipation medium. A heat dissipation structure for a semiconductor device, comprising: