JP2565880B2 - Manufacturing method of surface acoustic wave device - Google Patents
Manufacturing method of surface acoustic wave deviceInfo
- Publication number
- JP2565880B2 JP2565880B2 JP61266557A JP26655786A JP2565880B2 JP 2565880 B2 JP2565880 B2 JP 2565880B2 JP 61266557 A JP61266557 A JP 61266557A JP 26655786 A JP26655786 A JP 26655786A JP 2565880 B2 JP2565880 B2 JP 2565880B2
- Authority
- JP
- Japan
- Prior art keywords
- acoustic wave
- surface acoustic
- wave device
- wafer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) 本発明は弾性表面波装置の製造方法に係り、特にLi2B
4O7を基板に用いた弾性表面波装置の製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a method for manufacturing a surface acoustic wave device, and in particular to Li 2 B.
The present invention relates to a method of manufacturing a surface acoustic wave device using 4 O 7 as a substrate.
(従来の技術) 一般に弾性表面波装置は、第2図に示す様にLiTaO3,L
iNbO3,水晶等からなる圧電基板(22)上に、Alを蒸着
し、その後フォトリソグラフィを使用してくし型電極
(21)を形成した後、ダイシングによって各弾性表面波
装置に切断して形成する。The (prior art) generally surface acoustic wave device, LiTaO 3 as shown in FIG. 2, L
Formed by vapor-depositing Al on a piezoelectric substrate (22) made of iNbO 3 , crystal, etc., then forming a comb-shaped electrode (21) using photolithography, and then cutting it into each surface acoustic wave device by dicing. To do.
ところで、Li2B4O7からなる基板を用いた弾性表面波
装置は、LiTaO3基板からなる弾性表面波装置よりも温度
特性が良好であり、かつ水晶基板からなる弾性表面波装
置よりも結合係数が良好なため、今日注目され、商品化
がなされている。By the way, a surface acoustic wave device using a substrate made of Li 2 B 4 O 7 has better temperature characteristics than a surface acoustic wave device made of a LiTaO 3 substrate and is more coupled than a surface acoustic wave device made of a quartz substrate. Due to its good coefficient, it has been spotlighted and commercialized today.
このLi2B4O7ウェハー上に複数の弾性表面波装置を形
成し、個々の装置に切断(ダイシング)する際、通常第
3図に示す様に、切断を行う刃(31)と基板(32)との
加熱を防止するため水(33)を吹きつけて冷却を行な
う。なお、(34)はウェハーチャックである。When a plurality of surface acoustic wave devices are formed on this Li 2 B 4 O 7 wafer and cut (diced) into individual devices, as shown in FIG. 3, a blade (31) for cutting and a substrate ( To prevent heating with (32), cool with water (33). Incidentally, (34) is a wafer chuck.
ところで、Li2B4O7単結晶の材料自体の性質として、
水の溶解する性質がある。したがって、このダイシング
工程で、第4図(a)に示す様に、電極指(41)間の圧
電基板(42)が露出している部分(43)では、水により
溶解が生じ、第4図(b)に示す如く不所望な溝すなわ
ちグループ(44)が形成される。このため、ダイシング
されて得られた弾性表面波装置では、グルーブの深さ分
だけ電極指の膜厚が増加したと同等の効果が生じ、設計
周波数からずれた周波数が生じる問題が顕著に見られ
る。By the way, as the properties of the Li 2 B 4 O 7 single crystal material itself,
It has the property of dissolving water. Therefore, in this dicing process, as shown in FIG. 4 (a), water is dissolved in the portion (43) where the piezoelectric substrate (42) between the electrode fingers (41) is exposed, and the portion shown in FIG. Undesired grooves or groups (44) are formed as shown in (b). Therefore, in the surface acoustic wave device obtained by dicing, the same effect as that when the film thickness of the electrode finger is increased by the depth of the groove is produced, and the problem that the frequency deviated from the design frequency is prominently seen. .
(発明が解決しようとする問題点) 上述の問題点に鑑み、本発明は、ダイシング時の冷却
水によりLi2B4O7からなる基板にグルーブが生じること
を防止する弾性表面波装置を提供することを目的とす
る。(Problems to be Solved by the Invention) In view of the above-mentioned problems, the present invention provides a surface acoustic wave device that prevents the formation of grooves in a substrate made of Li 2 B 4 O 7 by cooling water during dicing. The purpose is to do.
(問題点を解決するための手段) 上述の目的を達成するため、本発明の弾性表面波装置
の製造方法は、Li2B4O7ウェハー上に複数の電極を形成
した後、保護膜をこのウェハー上に形成し、加水しなが
らウェハーを切断し、各弾性表面波装置に切断すること
を基本構成としている。(Means for Solving the Problems) In order to achieve the above-mentioned object, the method for manufacturing a surface acoustic wave device of the present invention comprises forming a plurality of electrodes on a Li 2 B 4 O 7 wafer and then forming a protective film. The basic structure is to form on this wafer, cut the wafer while adding water, and cut to each surface acoustic wave device.
(作用) 上述の手段をとることにより、保護膜により、水がウ
ェハー上に直接接触しないためLi2B4O7ウェハーの溶解
を防止することができる。(Operation) By taking the above-mentioned means, the protective film prevents water from coming into direct contact with the wafer, thereby preventing the Li 2 B 4 O 7 wafer from being dissolved.
(実 施 例) 以下、本発明の実施例について、第1図(a)乃至第
1図(e)を参照して説明する。(Examples) Examples of the present invention will be described below with reference to FIGS. 1 (a) to 1 (e).
第1図(a)に示す如く電極(1)が形成されたLi2B
4O7ウェハー(2)上にホトレジスト等をスピンナーに
よりコーティングして、第1図(b)に示す如く、保護
膜(3)を形成する。次いで、第3図に示すダイシング
装置を用いて、刃とウェハーとの加熱を防止するために
水を加えて、第1図(c)に示す様に個々の弾性表面波
装置(4)に切断する。この際、保護膜(3)により、
冷却水はウェハー(2)表面に触れることはない。その
後、第1図(d)に示す様に、O2プラズマにさらし、レ
ジスト保護膜(3)をアッシングして除却すると、第1
図(e)に示す如く、弾性表面波装置が得られる。Li 2 B with electrode (1) formed as shown in FIG. 1 (a).
A photoresist or the like is coated on the 4 O 7 wafer (2) by a spinner to form a protective film (3) as shown in FIG. 1 (b). Then, using the dicing device shown in FIG. 3, water is added to prevent heating of the blade and the wafer, and the surface acoustic wave device (4) is cut into individual surface acoustic wave devices (4) as shown in FIG. 1 (c). To do. At this time, by the protective film (3),
The cooling water does not touch the surface of the wafer (2). Then, as shown in FIG. 1 (d), when exposed to O 2 plasma and the resist protective film (3) is removed by ashing,
A surface acoustic wave device is obtained as shown in FIG.
次に、上述の実施例により作成された弾性表面波装置
の効果について述べる。Next, the effect of the surface acoustic wave device produced by the above-described embodiment will be described.
本発明者らは、Li2B4O7基板を用いた200MHz帯共振子
の試作に、上述の工程を用いた場合と、従来の技術によ
り試作した場合とを比較してみた。The inventors of the present invention compared the case where the above-described process was used and the case where the conventional technology was used for the prototype of the 200 MHz band resonator using the Li 2 B 4 O 7 substrate.
すると、従来技術によりダイシングを行なうと、ダイ
シング終了時には、600Å程度の深さのグルーブが形成
され約0.5MHzの周波数の低下が見られた。しかしなが
ら、上述の実施例の工程を用いたダイシングを行なう
と、ダイシング終了時にはグルーブの形成も見られず、
周波数変動も生じないことが確認された。Then, when the dicing was performed by the conventional technique, a groove having a depth of about 600 Å was formed at the end of the dicing, and the frequency was decreased by about 0.5 MHz. However, when dicing is performed using the process of the above-described embodiment, no groove is formed at the end of dicing,
It was confirmed that there was no frequency fluctuation.
なお、保護膜を電極が形成された主面以外の他の面に
形成すれば、他の面が水により溶解されることを防止で
きる。If the protective film is formed on a surface other than the main surface on which the electrode is formed, it is possible to prevent the other surface from being dissolved by water.
上述の説明の如く、本発明は、ダイシング時の刃およ
びウェハーの加熱を防止する冷却水によるLi2B4O7基板
の溶接を防止することにより、グルーブが形成されない
ため、周波数変動を防止することができる。As described above, the present invention prevents welding of the Li 2 B 4 O 7 substrate by cooling water that prevents heating of the blade and wafer during dicing, thereby preventing frequency fluctuations because no groove is formed. be able to.
第1図(a)乃至第1図(e)は本発明の実施例を説明
するための工程簡略図、第2図は弾性表面波装置を説明
するための模式図、第3図はダイシング装置の簡略図、
第4図(a)乃至第4図(b)は従来技術を説明するた
めの工程簡略図である。 (1)……電極 (2)……Li2B4O7ウェハー (3)……保護膜 (4)……弾性表面波装置1 (a) to 1 (e) are simplified process diagrams for explaining an embodiment of the present invention, FIG. 2 is a schematic diagram for explaining a surface acoustic wave device, and FIG. 3 is a dicing device. A simplified diagram of
4 (a) and 4 (b) are schematic process diagrams for explaining the conventional technique. (1) …… Electrode (2) …… Li 2 B 4 O 7 wafer (3) …… Protective film (4) …… Surface acoustic wave device
Claims (1)
を形成する第1の工程と、 少なくとも複数のこの電極が形成されたウェハー主面上
にレジストを塗布し、保護膜を形成する第2の工程と、 加水しながら前記ウェハーを切断することにより、複数
の弾性表面波装置を形成する第3の工程と、 O2プラズマにさらし、レジスト保護膜をアッシングして
除去する第4の工程とを少なくとも備えた弾性表面波装
置の製造方法。1. A first step of forming a plurality of electrodes on a wafer made of L i 2 B 4 O 7 , and a resist is applied on a main surface of a wafer on which at least a plurality of these electrodes are formed to form a protective film. A second step of forming, a third step of forming a plurality of surface acoustic wave devices by cutting the wafer while adding water, and a second step of exposing to O 2 plasma and ashing and removing the resist protective film. 4. A method of manufacturing a surface acoustic wave device, comprising at least the step 4).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61266557A JP2565880B2 (en) | 1986-11-11 | 1986-11-11 | Manufacturing method of surface acoustic wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61266557A JP2565880B2 (en) | 1986-11-11 | 1986-11-11 | Manufacturing method of surface acoustic wave device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63121306A JPS63121306A (en) | 1988-05-25 |
JP2565880B2 true JP2565880B2 (en) | 1996-12-18 |
Family
ID=17432493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61266557A Expired - Lifetime JP2565880B2 (en) | 1986-11-11 | 1986-11-11 | Manufacturing method of surface acoustic wave device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2565880B2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07135441A (en) * | 1994-06-02 | 1995-05-23 | Sanyo Electric Co Ltd | Manufacture of surface acoustic wave element |
JP3379518B2 (en) * | 2000-08-14 | 2003-02-24 | 株式会社村田製作所 | Method for manufacturing piezoelectric element |
JP2002184720A (en) * | 2000-12-15 | 2002-06-28 | Murata Mfg Co Ltd | Method of manufacturing device |
US8776335B2 (en) * | 2010-11-17 | 2014-07-15 | General Electric Company | Methods of fabricating ultrasonic transducer assemblies |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6041315A (en) * | 1983-08-17 | 1985-03-05 | Toshiba Corp | Surface acoustic wave element |
-
1986
- 1986-11-11 JP JP61266557A patent/JP2565880B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS63121306A (en) | 1988-05-25 |
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EXPY | Cancellation because of completion of term |