JP2564387B2 - Laminate - Google Patents

Laminate

Info

Publication number
JP2564387B2
JP2564387B2 JP1011860A JP1186089A JP2564387B2 JP 2564387 B2 JP2564387 B2 JP 2564387B2 JP 1011860 A JP1011860 A JP 1011860A JP 1186089 A JP1186089 A JP 1186089A JP 2564387 B2 JP2564387 B2 JP 2564387B2
Authority
JP
Japan
Prior art keywords
film
thin film
metal
substrate
optical recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1011860A
Other languages
Japanese (ja)
Other versions
JPH02192936A (en
Inventor
多嘉之 石崎
潔 千葉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teijin Ltd
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Priority to JP1011860A priority Critical patent/JP2564387B2/en
Publication of JPH02192936A publication Critical patent/JPH02192936A/en
Application granted granted Critical
Publication of JP2564387B2 publication Critical patent/JP2564387B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】 <産業上の利用分野> 本発明は、基体上に気相薄膜形成法により金属薄膜を
積層した積層体の改良に関し、更に詳しくは金属薄膜の
基体との接着性を向上させた積層体に関する。
Description: TECHNICAL FIELD The present invention relates to improvement of a laminate in which a metal thin film is laminated on a substrate by a vapor phase thin film forming method, and more specifically, the adhesion of the metal thin film to the substrate is improved. It relates to an improved laminate.

<従来の技術> 近年、真空蒸着技術は目をみはる発展を遂げ、その取
り扱いの簡便さから湿式メッキ法に変わり電気・電子・
光学・繊維・機械・建築等、各業界で応用導入が行なわ
れるようになってきた。
<Conventional Technology> In recent years, vacuum deposition technology has made remarkable progress, and due to its easy handling, it is replaced with a wet plating method, and electrical, electronic, and
Applications have been introduced in various industries such as optics, textiles, machinery, and construction.

例えば電子部品のコンデンサーや衣服等に織り込ませ
る金銀糸などは、それぞれ高分子のフイルム及び繊維を
金属蒸着によってメタライズしたものである。
For example, capacitors of electronic parts, gold and silver threads to be woven into clothes, and the like are metal films obtained by metallizing polymer films and fibers, respectively.

更に最近では、オーディオービジュアル(AV)ブーム
にのってコンパクトディスク(CD),ビデオディスク
(VD)の需要が激増しているが、これらの反射層として
Al蒸着膜がコートされている。
More recently, the demand for compact discs (CDs) and video discs (VDs) has increased dramatically due to the audio-visual (AV) boom.
Al vapor deposition film is coated.

ところが、製膜されたAl蒸着膜を観察すると、多くの
ピンホールが発生していることが分かった。この原因の
一つとして材料の問題がある。ところで、一般にマイグ
レーションしやすい材料はピンホールで少ないといわれ
ている。このような材料にはAuを代表とする貴金属が挙
げられる。そこで最近ではCD等のバックコートにもAuコ
ートが行なわれるようになってきた。
However, when observing the formed Al vapor deposition film, it was found that many pinholes were generated. One of the causes of this is a material problem. By the way, it is generally said that there are few pinholes that easily migrate. Examples of such materials include precious metals such as Au. Therefore, Au coating has come to be applied to back coats such as CDs recently.

<発明が解決しようとする問題点> ところが貴金属等マイグレーションし易い物質は、一
般に付着力が弱い。実際に、Au,Pt,Pd薄膜等をスパッタ
リング法等を用いてガラス及び高分子フイルム基板等に
形成した場合、形成膜が機械的な力を加えることなく自
然に剥離することが確認されている。そこで現在これら
の付着力を向上させる為、薄膜と基板の間に中間層を設
けたり、イオンプレーティング法による基板への金属原
子の打ち込み等が行われているが、いずれもプロセスが
複雑になり適した方法とはいえない。
<Problems to be Solved by the Invention> However, substances that easily migrate, such as precious metals, generally have weak adhesion. In fact, when Au, Pt, Pd thin films, etc. are formed on glass and polymer film substrates, etc. by using the sputtering method etc., it has been confirmed that the formed film spontaneously peels off without applying mechanical force. . Therefore, in order to improve the adhesiveness of these, an intermediate layer is provided between the thin film and the substrate, and metal atoms are implanted into the substrate by the ion plating method, but the process becomes complicated. Not a suitable method.

<問題を解決する為の手段> 本発明は、上記のような付着力の弱い金属に付着性の
良好なインジウム及び酸化インジウムを添加することに
より本来の性質(反射率,耐蝕性,ピンホールが少ない
等)を損うことなく簡易に薄膜と基板の付着性の方向を
図ることができることを見出し、なされたものである。
<Means for Solving Problems> In the present invention, by adding indium and indium oxide having good adhesiveness to a metal having weak adhesiveness as described above, original properties (reflectance, corrosion resistance, pinhole It was made by finding that the direction of the adhesion between the thin film and the substrate can be easily aimed at without impairing the small amount).

すなわち、本発明は、基体上に気相薄膜形成法により
金属薄膜を積層した積層体において、前記金属薄膜にIn
又は/In2O3を添加したことを特徴とするものである。
That is, the present invention relates to a laminated body in which a metal thin film is laminated on a substrate by a vapor phase thin film forming method,
Alternatively, / In 2 O 3 is added.

上述の点から本発明における金属薄膜は高分子フイル
ム等の基体との接着が悪く、その改善を要するものであ
れば特に制限はなく、かかる金属としては、Au,Ag,Pd,P
t,Ni,Rh,Bi,Zn,Cu,Cd,Al,Sn,Pbの各金属又はこれらの合
金が挙げられる。中でもピンホールが少ない点で有利で
基体との接着が悪く、その改善が要望されているAu,Pt,
Pd等のマイグレーションし易い貴金属に効果的である。
From the above-mentioned points, the metal thin film in the present invention has poor adhesion to a substrate such as a polymer film and is not particularly limited as long as it requires improvement, and as such a metal, Au, Ag, Pd, P
Examples include t, Ni, Rh, Bi, Zn, Cu, Cd, Al, Sn, and Pb metals or alloys thereof. Among them, it is advantageous in that it has few pinholes, and adhesion to the substrate is poor.
It is effective for precious metals such as Pd that easily migrate.

又、本発明における金属薄膜の形成法は、スパッタリ
ング法に代表される気相中から基板上に薄膜を堆積させ
る気相薄膜形成法であれば特に限定されず、スパッタリ
ング法の他に真空蒸着法,イオンビーム蒸着法,EB蒸着
法,CVD法,ECR法等の公知の気相薄膜形成法も適用出来、
これらの膜形成方法を用い必要に応じて同時蒸着あるい
は単独蒸着を行なう。
The method for forming a metal thin film in the present invention is not particularly limited as long as it is a vapor phase thin film forming method for depositing a thin film on a substrate from a vapor phase represented by a sputtering method, and a vacuum vapor deposition method other than the sputtering method. , Well-known vapor phase thin film forming methods such as ion beam evaporation method, EB evaporation method, CVD method, ECR method, etc. can be applied,
If necessary, simultaneous vapor deposition or single vapor deposition is performed using these film forming methods.

又、その蒸発減はInとの合金あるいはIn2O3との複合
体からなるものでも、あるいはIn,In2O3,各金属単体か
らなるものであってもよい。そして膜形成時の雰囲気は
真空で、通常のスパッタガスあるいは該ガス中に所定の
含有量の酸素ガスを有するものであればよい。なお、酸
素含有ガスを用いる場合の酸素の含有量は成膜法にもよ
るが、通常10vol%程度以下の範囲である。
The evaporation loss may be an alloy with In or a complex with In 2 O 3 , or may be In, In 2 O 3 or a simple substance of each metal. The atmosphere at the time of film formation is vacuum, and may be a normal sputtering gas or a gas containing a predetermined content of oxygen gas. The oxygen content in the case of using the oxygen-containing gas depends on the film forming method, but is usually in the range of about 10 vol% or less.

ところで、本発明の積層体は前述の従来技術の各種態
様に適用できるものであるが、金属薄膜の反射率,耐蝕
性,ピンホールが少ない等の観点より該金属膜を保護層
又は/及び反射層とした光記録媒体に効果的に用いられ
る。
By the way, the laminate of the present invention can be applied to various aspects of the above-mentioned prior art. However, from the viewpoint of reflectance, corrosion resistance, few pinholes, etc. of the metal thin film, the metal film is used as a protective layer and / or a reflection layer. It is effectively used for an optical recording medium having a layer.

ここで光記録媒体の記録層には、ピットによるもの、
レーザを照射することによって相変化するもの、バルブ
を形成するもの、磁化反転するもの等が挙げられるが、
特に希土類−遷移金属の非晶質合金より成る光磁気記録
層には好適である。なんとなれば本発明により作成され
た薄膜がCDのように光の反射だけを目的としたものと違
って保護層としての要素も大きいからである。そしてそ
の基板には、PMMA,ポリカーボネート,エポキシ系等の
高分子樹脂基板及びガラス基板等があげられるが、特に
安価で温度特性,寸法安定性のよいポリカーボネートが
好んで用いられる。
Here, the recording layer of the optical recording medium is formed by pits,
Examples include those that undergo a phase change upon irradiation with laser, those that form a valve, those that undergo magnetization reversal, etc.
In particular, it is suitable for a magneto-optical recording layer made of an amorphous alloy of rare earth-transition metal. This is because the thin film produced by the present invention has a large element as a protective layer, unlike a thin film intended only for light reflection like a CD. Examples of the substrate include a polymer resin substrate such as PMMA, polycarbonate, or an epoxy resin, a glass substrate, and the like. In particular, polycarbonate that is inexpensive and has excellent temperature characteristics and dimensional stability is preferably used.

なお、金属薄膜へのIn又は/及びIn2O3の添加は多い
ほど接着性はよくなるが反射率,耐久性等金属薄膜の本
来の特性が低下するため、In量で20at%以下が好まし
い。
It should be noted that the more the amount of In or / and In 2 O 3 added to the metal thin film, the better the adhesion, but the original properties of the metal thin film such as reflectance and durability deteriorate. Therefore, the In content is preferably 20 at% or less.

<作用> 上記の本発明の積層体は、その金属薄膜が基板との密
着性がよく、物質によっては反射率の高い、しかもピン
ホールが少ない膜となるので、高品質で耐久性が良く、
多方面への適用が可能である。特に、本発明を光記録媒
体に適用した場合、耐候試験に於いても亀裂剥離の生じ
ない、高信頼性の光記録媒体を得ることができる。
<Operation> In the laminate of the present invention described above, the metal thin film has good adhesion to the substrate, has a high reflectance depending on the substance, and has a small number of pinholes, and thus has high quality and good durability.
It can be applied to various fields. In particular, when the present invention is applied to an optical recording medium, it is possible to obtain a highly reliable optical recording medium which does not cause crack separation even in a weather resistance test.

<実施例> 以下、本発明の実施例について図を参照にしながら説
明する。
<Example> Hereinafter, an example of the present invention will be described with reference to the drawings.

(実施例1) 保護層兼反射層としてIn2O3添加のPd薄膜を用いた光
磁気記録媒体を作成し評価した。
Example 1 A magneto-optical recording medium using a Pd thin film with In 2 O 3 added as a protective layer and a reflective layer was prepared and evaluated.

In2O3添加のPd薄膜は、Rfマグネトロン装置を用い、I
TO(インジウム・スズ酸化物)ターゲット上にPdの板を
のせて、アルゴン100%雰囲気中で成膜された。ここで
スパッタリング圧は2mmtorr,スパッタパワーは4W/cm2
した。この膜中のInの含有量はAES分析の結果よりおよ
そ10at%であった。
The Pd thin film with In 2 O 3 added was
A Pd plate was placed on a TO (indium tin oxide) target, and a film was formed in an atmosphere of 100% argon. Here, the sputtering pressure was 2 mm torr and the sputtering power was 4 W / cm 2 . The content of In in this film was about 10 at% based on the result of AES analysis.

第1図は本実施例の上記のPd薄膜を保護層兼反射層と
した光磁気記録媒体の構成を示す断面図である。第1図
において、(11)はポリカーボネート(PC)基板、(1
2)は同じスパッタリング法により、Ar/O2=90/10(Vol
%)ガスを用いて形成したITO膜(膜厚は800Å)からな
る誘電体層、(13)は同じスパッタリング法により形成
したTi膜(20Å)からなる透明金属保護層、(14)は同
じスパッタリング法により形成したTb23Fe66Co11非晶質
合金からなる光磁気記録層、(15)は保護層兼反射層の
上述のIn2O3添加のPd膜(膜厚は1000Å)である。
FIG. 1 is a sectional view showing the structure of a magneto-optical recording medium in which the above Pd thin film of this embodiment is used as a protective layer and a reflective layer. In FIG. 1, (11) is a polycarbonate (PC) substrate, (1)
2) is Ar / O 2 = 90/10 (Vol
%) A dielectric layer made of an ITO film (film thickness is 800Å) formed by using a gas, (13) a transparent metal protective layer made of a Ti film (20Å) formed by the same sputtering method, and (14) the same sputtering. The magneto-optical recording layer made of a Tb 23 Fe 66 Co 11 amorphous alloy formed by the method, (15) is the above-mentioned In 2 O 3 -added Pd film (thickness 1000 Å) of the protective layer and the reflective layer.

上記実施例の光磁気記録媒体について70℃90%RHの耐
候試験を行なった。通常記録層(14)の材料が酸化した
場合、保磁力,カー回転角が低下するが、本発明による
上記実施例の光磁気記録媒体は実用レベルと云われる10
00時間以上亀裂,剥離および保磁力,カー回転角の劣化
は認められなかった。
The magneto-optical recording medium of the above example was subjected to a weather resistance test at 70 ° C. and 90% RH. Normally, when the material of the recording layer (14) is oxidized, the coercive force and the Kerr rotation angle are lowered, but the magneto-optical recording medium of the above-mentioned embodiment according to the present invention is said to be at a practical level.
No cracking, peeling, deterioration of coercive force, or Kerr rotation angle was observed for more than 00 hours.

更に、830nm(半導体レーザの波長)における膜の反
射率を測定したところ80%以上あることが確認された。
これより該金属膜は保護層兼反射層として十分に利用で
きることが分かった。
Furthermore, the reflectance of the film at 830 nm (wavelength of the semiconductor laser) was measured and found to be 80% or more.
From this, it was found that the metal film can be sufficiently used as a protective layer and a reflective layer.

(実施例2) ガラス基板上に以下のようにしてIn及びIn2O3添加のP
t膜(膜厚2000Å)を作成した。すなわち、Rfマグネト
ロン装置を用い、Ptのターゲット上にInのチップをのせ
て、酸素雰囲気中で成膜した。ここでスパッタリングガ
スは、O2/Ar=10/90(Vol%),スパッタガス圧は2mmto
rr,スパッタパワーは4W/cm2とした。この膜中のInの含
有量はAES分析の結果よりおよそ15at%であった。
Example 2 In and In 2 O 3 added P on a glass substrate as follows.
A t-film (film thickness 2000Å) was created. That is, using an Rf magnetron device, an In chip was placed on a Pt target to form a film in an oxygen atmosphere. Here, the sputtering gas is O 2 / Ar = 10/90 (Vol%), and the sputtering gas pressure is 2 mmto
The rr and sputter power were 4 W / cm 2 . The content of In in this film was about 15 at% based on the result of AES analysis.

次いでこのサンプルのPt膜を電極として用い水の酸化
還元反応を行なった。第2図は水の酸化還元反応を行な
った時の電流−電圧曲線である。
Then, using the Pt film of this sample as an electrode, a redox reaction of water was performed. FIG. 2 is a current-voltage curve when an oxidation-reduction reaction of water is performed.

ここで電圧Eのスイープ幅は標準水素電極(HNE)に
対して0.1〜1.4Vとし、500サイクルスイープした。その
結果、図に示すように経時変化が全くなかった。なお図
の縦軸が電流I(mA/cm2)、横軸は電圧E(V)であ
る。
The sweep width of the voltage E was 0.1 to 1.4 V with respect to the standard hydrogen electrode (HNE), and the sweep was performed for 500 cycles. As a result, there was no change with time as shown in the figure. The vertical axis of the figure is the current I (mA / cm 2 ) and the horizontal axis is the voltage E (V).

(比較例) 比較の為にPd及びPtターゲットをAr100%雰囲気中で
スパッタリングしてそれぞれ実施例1,2に対応する積層
体を形成した。
(Comparative Example) For comparison, Pd and Pt targets were sputtered in an Ar 100% atmosphere to form laminated bodies corresponding to Examples 1 and 2, respectively.

ところがこれら積層体は何れもチャンバーから取り出
した時点でPd膜,Pt膜に剥離が生じ、耐久試験をするこ
とができなかった。
However, in all of these laminates, the Pd film and the Pt film peeled off when taken out from the chamber, and the durability test could not be performed.

<発明の効果> 以上の様に本発明によれば基板との接着性がよくて亀
裂,剥離が生じない、又ピンホールが少なくてガスバリ
ア性の良好な、且つ反射率の大きい、しかも耐蝕性に優
れた金属薄膜を備えた積層体を得ることができる。該金
属薄膜はCD等の光記録媒体の反射層,保護層に最適であ
り、従って本発明は光記録媒体に特に効果的であるが、
その他、電気化学方面の電極,装飾品等広く適応される
のは言うまでもない。
<Effects of the Invention> As described above, according to the present invention, the adhesiveness to a substrate is good, cracks and peeling do not occur, the number of pinholes is small, the gas barrier property is good, the reflectance is high, and the corrosion resistance is high. It is possible to obtain a laminate provided with an excellent metal thin film. The metal thin film is most suitable for a reflection layer and a protective layer of an optical recording medium such as a CD, and therefore the present invention is particularly effective for the optical recording medium.
In addition, it goes without saying that it is widely applied to electrodes in the electrochemical field, ornaments, etc.

【図面の簡単な説明】[Brief description of drawings]

第1図は実施例1の光磁気記録媒体の構成を示す断面
図、第2図は実施例2のPt膜を電極として用い、電気科
学的な耐久試験を行なった結果を示すグラフである。 11:PC基板、14:光磁気記録層 15:In2O3添加のPd膜
FIG. 1 is a cross-sectional view showing the structure of the magneto-optical recording medium of Example 1, and FIG. 2 is a graph showing the results of an electrochemical endurance test using the Pt film of Example 2 as an electrode. 11: PC substrate, 14: Magneto-optical recording layer 15: Pd film with In 2 O 3 added

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭50−135359(JP,A) 特公 昭61−21827(JP,B2) 特公 昭62−16186(JP,B2) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-50-135359 (JP, A) JP-B 61-21827 (JP, B2) JP-B 62-16186 (JP, B2)

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】基体上に気相薄膜形成法により金属薄膜を
積層した積層体において、積層体は光記録媒体であって
金属薄膜がその保護層又は/及び反射層であり、かつ金
属膜はAu,Pd,Pt,Ni,Rh,Bi,Zn,Cu,Cd,Al,Sn,Pbよりなる
群から選ばれた金属膜又は合金膜に、In又は/及びIn2O
3を添加したものであることを特徴とする積層体。
1. A laminate in which a metal thin film is laminated on a substrate by a vapor phase thin film forming method, the laminate is an optical recording medium, the metal thin film is a protective layer and / or a reflection layer thereof, and the metal film is In or / and In 2 O on a metal film or alloy film selected from the group consisting of Au, Pd, Pt, Ni, Rh, Bi, Zn, Cu, Cd, Al, Sn and Pb.
A layered product containing 3 added.
JP1011860A 1989-01-23 1989-01-23 Laminate Expired - Lifetime JP2564387B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1011860A JP2564387B2 (en) 1989-01-23 1989-01-23 Laminate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1011860A JP2564387B2 (en) 1989-01-23 1989-01-23 Laminate

Publications (2)

Publication Number Publication Date
JPH02192936A JPH02192936A (en) 1990-07-30
JP2564387B2 true JP2564387B2 (en) 1996-12-18

Family

ID=11789482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1011860A Expired - Lifetime JP2564387B2 (en) 1989-01-23 1989-01-23 Laminate

Country Status (1)

Country Link
JP (1) JP2564387B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2663167B2 (en) * 1989-04-12 1997-10-15 富士写真フイルム株式会社 Optical recording medium

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50135359A (en) * 1974-04-15 1975-10-27
JPS6121827A (en) * 1984-07-09 1986-01-30 Fuji Heavy Ind Ltd 4-wheel drive switching controller for part-time 4-wheel drive car
JPS6216186A (en) * 1985-07-16 1987-01-24 Mitsui Toatsu Chem Inc Thermal recording material

Also Published As

Publication number Publication date
JPH02192936A (en) 1990-07-30

Similar Documents

Publication Publication Date Title
US7514037B2 (en) AG base alloy thin film and sputtering target for forming AG base alloy thin film
US4957604A (en) Production of a thin x-ray amorphous aluminum nitride or aluminum silicon nitride film on a surface
JP2003500783A (en) Hybrid disc manufacturing method and hybrid disc
JP3558301B2 (en) High corrosion resistant Ag-Mg alloy thin film
US5512364A (en) Magneto-optical recording medium
JPH073435A (en) Highly corrosion resistant ag-mg alloy and thin film using the same
JP2564387B2 (en) Laminate
US4640860A (en) Optical recording coating
JPH02265052A (en) Production of optical recording medium
JP2550118B2 (en) Magneto-optical recording medium
JPH02105351A (en) Optical recording medium
JP2528188B2 (en) Optical recording medium
JPH01173454A (en) Magneto-optical recording medium
EP1148148A1 (en) Laminate structure and production method therefor
JP2974510B2 (en) Magneto-optical recording element and method of manufacturing the same
JP2583255B2 (en) Magneto-optical recording medium
JPH02285533A (en) Optical recording medium
JPS6323235A (en) Optical information recording carrier
JP2904848B2 (en) Magneto-optical recording element and method of manufacturing the same
JPH02161629A (en) Optical recording medium and production thereof
JP2731202B2 (en) Information recording medium
JPH04219619A (en) Thin and transparent corrosion preventing film and manufacture thereof
JPH04324141A (en) Optical information recording medium
JPS63197043A (en) Optical disk
JPH0325738A (en) Magneto-optical recording medium