JP2556856B2 - Color solid-state image sensor - Google Patents

Color solid-state image sensor

Info

Publication number
JP2556856B2
JP2556856B2 JP13847387A JP13847387A JP2556856B2 JP 2556856 B2 JP2556856 B2 JP 2556856B2 JP 13847387 A JP13847387 A JP 13847387A JP 13847387 A JP13847387 A JP 13847387A JP 2556856 B2 JP2556856 B2 JP 2556856B2
Authority
JP
Japan
Prior art keywords
solid
state image
filter
color
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP13847387A
Other languages
Japanese (ja)
Other versions
JPS63301904A (en
Inventor
伸一 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP13847387A priority Critical patent/JP2556856B2/en
Publication of JPS63301904A publication Critical patent/JPS63301904A/en
Application granted granted Critical
Publication of JP2556856B2 publication Critical patent/JP2556856B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Optical Filters (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は複数の光センサー部が配列された半導体構成
の撮像基板に形成されるカラー固体撮像素子用カラーフ
ィルタに関するものである。
Description: TECHNICAL FIELD The present invention relates to a color filter for a color solid-state image pickup element formed on an image pickup substrate having a semiconductor structure in which a plurality of optical sensor sections are arranged.

〈従来の技術〉 固体撮像素子が形成された半導体基体上に直接カラー
フィルタを形成するいわゆるオンウェハカラーフィルタ
形成技術は、第2図(a)・(b)のごとく実施され
る。即ち、第2図(a)のように撮像素子2のウェハプ
ロセスが完了したウェハ1上に透明レジスト3を塗布し
て、素子2条の凹凸の平坦化と被染色性レジストの密着
性を改善した後、フィルタ部となる被染色性ホトレジス
トを塗布し、露光・現像を行なって所定の画素上に被染
色性ホトレジストパターンを形成する。
<Prior Art> A so-called on-wafer color filter forming technique for directly forming a color filter on a semiconductor substrate on which a solid-state image sensor is formed is carried out as shown in FIGS. 2 (a) and 2 (b). That is, as shown in FIG. 2A, the transparent resist 3 is applied onto the wafer 1 for which the wafer process of the image pickup device 2 is completed, and the unevenness of the element 2 is flattened and the adhesion of the dyeable resist is improved. After that, a dyeable photoresist serving as a filter portion is applied, exposed and developed to form a dyeable photoresist pattern on predetermined pixels.

然る後、第1の染色液にウェハ1を浸漬して前記被染
色性ホトレジストパターンを染色し、第1の着色フィル
タ4を形成する。
Then, the wafer 1 is immersed in the first dyeing solution to dye the photoresist pattern to be dyed to form the first colored filter 4.

第1の着色フィルタ4を形成したウェハ1を乾燥させ
た後、第2図(b)のようにウェハ1上に透明レジスト
5を塗布する。次に該透明レジスト5上に新たに被染色
性ホトレジストパターンを形成し、第2の染色液を用い
て第2の着色フィルタ6を形成する。次いで第2の着色
フィルタ6を形成したウェハ1上に、透明レジスト7塗
布し、更に上記工程と同じように被染色性ホトレジスト
を用いて第3の着色フィルタ8を形成し、最上層に透明
保護膜99を形成する。着色フィルタ4,6,8間の透明レジ
スト5,7は着色フィルタ4,6,8相互の混色を防ぐために形
成されたもので、防染膜としての役割を果している。
After the wafer 1 on which the first colored filter 4 is formed is dried, the transparent resist 5 is applied on the wafer 1 as shown in FIG. Next, a photoresist pattern to be dyed is newly formed on the transparent resist 5, and the second coloring filter 6 is formed by using the second dyeing solution. Then, a transparent resist 7 is applied on the wafer 1 on which the second colored filter 6 is formed, and a third colored filter 8 is formed by using a dyeable photoresist in the same manner as in the above step, and the uppermost layer is transparently protected. Form the film 99. The transparent resists 5 and 7 between the colored filters 4, 6 and 8 are formed to prevent color mixing between the colored filters 4, 6 and 8 and play a role as a stainproof film.

〈発明が解決しようとする問題点〉 上述のように形成されたカラー固体撮像素子の着色フ
ィルタ積層数は透過したい色によって異なる。例えば、
グリーンを透過するためにシアンとイエローの着色フィ
ルタを積層して2層の着色フィルタを形成すると、該2
層着色フィルタは他の単層着色フィルタに比べて曲率が
大きくなるため、2層着色フィルタのレンズ効果が単層
の着色フィルタに比べて大きくなって、カラー固体撮像
素子全体としてレンズ効果がアンバランスとなり、色信
号のS/N比が低下するという問題がある。
<Problems to be Solved by the Invention> The number of stacked color filters of the color solid-state imaging device formed as described above varies depending on the color to be transmitted. For example,
When cyan and yellow colored filters are laminated to form a two-layered colored filter for transmitting green,
Since the layer coloring filter has a larger curvature than other single layer coloring filters, the lens effect of the two-layer coloring filter is larger than that of the single layer coloring filter, and the lens effect is unbalanced as a whole of the color solid-state imaging device. Therefore, there is a problem that the S / N ratio of the color signal decreases.

〈問題点を解決するための手段〉 本発明は上述する問題点を解決するためになされたも
ので、半導体基板の一主面上に複数個の固体撮像素子を
形成し、該固体撮像素子上に夫々単層或いは複数層の着
色フィルタを形成したカラー固体撮像素子において、前
記着色フィルタの最大積層数と同層数になるように上記
単層或いは複数層の着色フィルタに透明フィルタを積層
してなるカラー固体撮像素子を提供するものである。
<Means for Solving Problems> The present invention has been made to solve the above-mentioned problems, and a plurality of solid-state imaging devices are formed on one main surface of a semiconductor substrate, and In a color solid-state imaging device having a single-layer or multi-layer color filter formed therein, transparent filters are laminated on the single-layer or multi-layer color filters so that the number of layers is the same as the maximum number of the color filters. And a color solid-state image pickup device.

<作 用> 上述の如く、全ての固体撮像素子上のフィルタ積層数
を同一にすることにより、従来、積層数のより少ない着
色フィルタ層の曲率が、積層数のより多い着色フィルタ
層の曲率に比べて小さくなるという現象が解消され、固
体撮像素子上のフィルタ層の曲率の統一下が可能とな
り、同時にカラー固体撮像素子全体の輝度の感度の上昇
も図れる。
<Operation> As described above, by making the number of filter layers laminated on all the solid-state imaging devices the same, the curvature of the colored filter layer having a smaller number of laminated layers has been changed to the curvature of the colored filter layer having a larger number of laminated layers in the past. The phenomenon that the size becomes smaller than that of the solid-state image pickup device is eliminated, and the curvature of the filter layer on the solid-state image pickup device can be unified, and at the same time, the sensitivity of the brightness of the entire color solid-state image pickup device can be increased.

〈実施例〉 以下、図面を用いて本発明の実施例を説明するが、本
発明はこれに限定されるものではない。
<Examples> Examples of the present invention will be described below with reference to the drawings, but the present invention is not limited thereto.

第1図(a)〜(c)は本発明の一実施例の製造プロ
セスを示す断面図である。先ず第1図(a)に示すよう
にウェハ1の1主面上に固体撮像素子2を形成し、前記
ウェハ1主面上に透明レジスト3を塗布して固体撮像素
子2上の凹凸の平坦化を図り、更に次工程で用いる被染
色性ホトレジストとの密着性を改善させる。次いで透明
レジスト3上に被染色性ホトレジストを塗布し、露光・
現像を行なって所定の撮像素子2a,2cに被染色性ホトエ
ジストパターンを形成する。然る後、ウェハ1を第1の
染色液に浸漬して前記被染色性ホトレジストパターンを
染色し、第1の着色フィルタ4を形成する。
1 (a) to 1 (c) are sectional views showing a manufacturing process of an embodiment of the present invention. First, as shown in FIG. 1 (a), a solid-state image sensor 2 is formed on one main surface of a wafer 1, and a transparent resist 3 is applied on the main surface of the wafer 1 to flatten the unevenness on the solid-state image sensor 2. And further improve the adhesion with the dyeable photoresist used in the next step. Next, a dyeable photoresist is applied on the transparent resist 3 and exposed.
Development is performed to form dyeable photo-esthetic patterns on predetermined image pickup devices 2a and 2c. Then, the wafer 1 is immersed in a first dyeing solution to dye the photoresist pattern to be dyed to form a first colored filter 4.

次いで第1の着色フィルタ4を形成したウェハ1を乾
燥させた後、第1図(b)のようにウェハ1上に着色フ
ィルタの混色を防ぐための防染膜5となる透明レジスト
を塗布する。該防染膜5の所定撮像素子2d上に新たに被
染色性ホトレジストパターンを形成し、該被染色性ホト
レジストパターンを第2の染色液にて染色して、第2の
着色フィルタ6を形成する。第2の着色フィルタ6を形
成したウェハ1上に防染膜7を形成し、該防染膜7の所
定撮像素子2b,2c上に上記と同じようにして第3の着色
フィルタ8を形成する。
Next, the wafer 1 on which the first colored filter 4 is formed is dried, and then a transparent resist, which is a stain-proof film 5 for preventing color mixing of the colored filter, is applied on the wafer 1 as shown in FIG. 1B. . A dyeable photoresist pattern is newly formed on the predetermined image pickup element 2d of the dye-proof film 5, and the dyeable photoresist pattern is dyed with a second dyeing solution to form a second colored filter 6. . The dye-proof film 7 is formed on the wafer 1 on which the second color filter 6 is formed, and the third color filter 8 is formed on the predetermined image pickup devices 2b and 2c of the dye-proof film 7 in the same manner as described above. .

次に、第1図(c)の如く第3の着色フィルタ8を含
むウェハ1上に新たに防染膜10を形成し、該防染膜10
上、或いは上記防染膜7上に透明レジストを塗布し、露
光・現像を行なって単層の着色フィルタを有する固体撮
像素子2a,2b,2d上に透明レジストパターンを形成し、こ
の透明レジストパターンを透明フィルタ11とする。該透
明フィルタ11を形成したウェハ1上に透明保護膜12を形
成して、カラー固体撮像素子が完成する。
Next, as shown in FIG. 1C, a stain-proof film 10 is newly formed on the wafer 1 including the third colored filter 8, and the stain-proof film 10 is formed.
A transparent resist is applied onto the dye-proof film 7 or above and exposed and developed to form a transparent resist pattern on the solid-state imaging devices 2a, 2b, 2d having a single-layer color filter. Is a transparent filter 11. A transparent protective film 12 is formed on the wafer 1 on which the transparent filter 11 is formed to complete a color solid-state imaging device.

このように全ての固体撮像素子上のフィルタ積層数を
同数にすることにより、フィルタ層の曲率が全固体撮像
素子に亘って統一される。
In this way, by making the number of filters laminated on all the solid-state image pickup devices the same, the curvature of the filter layers is unified over all the solid-state image pickup devices.

〈発明の効果〉 本発明により、カラー固体撮像素子をなす全ての固体
撮像素子上のフィルタ積層数が着色フィルタの最大積層
数と同一となってフィルタ層の曲率が上昇し、且つ統一
されるため、カラー固体撮像素子全体として輝度の感度
が上昇し、フィルタ層のレンズ効果がバランスよく向上
して色信号のS/N比が従来に比べて上昇する。したがっ
て本発明は精度及び感度のよいカラー固体撮像素子の製
造に寄与するものである。
<Effects of the Invention> According to the present invention, the number of filter stacks on all solid-state image sensors forming a color solid-state image sensor is the same as the maximum number of color filter stacks, and the curvature of the filter layers is increased and unified. As a whole, the color solid-state image pickup device has improved sensitivity of luminance, the lens effect of the filter layer is improved in a balanced manner, and the S / N ratio of the color signal is increased as compared with the conventional one. Therefore, the present invention contributes to the manufacture of a color solid-state image pickup device having high accuracy and sensitivity.

【図面の簡単な説明】[Brief description of drawings]

第1図(a)〜(c)は本発明の一実施例の製造プロセ
スを示す断面図、第2図(a)・(b)は従来例の製造
プロセスを示す断面図である。 1:ウェハ、2.2a,2b,2c,2d固体撮像素子、3……透明レ
ジスト、4……第1の着色フィルタ、5.7.10……防染
膜、6……第2着色フィルタ、8……第3の着色フィル
タ、9.12……透明保護膜、11……透明フィルタ
1 (a) to 1 (c) are sectional views showing a manufacturing process of an embodiment of the present invention, and FIGS. 2 (a) and 2 (b) are sectional views showing a manufacturing process of a conventional example. 1: Wafer, 2.2a, 2b, 2c, 2d solid-state image sensor, 3 ... Transparent resist, 4 ... First colored filter, 5.7.10 ... Dye-proof film, 6 ... Second colored filter, 8 ... … Third colored filter, 9.12 …… Transparent protective film, 11 …… Transparent filter

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】半導体基板の一主面上に複数個の固体撮像
素子を形成し、該固体撮像素子上にそれぞれ単層或は複
数層の着色フィルタを積層したカラー固体撮像素子であ
って、前記着色フィルタの層数が固体撮像素子間で異な
るカラー固体撮像素子において、前記各固体撮像素子上
の単層或は複数層の着色フィルタにそれぞれ所定数層の
透明フィルタを積層して、全固体撮像素子上のフィルタ
積層数を、前記着色フィルタの最大積層数と同層数とし
たことを特徴とするカラー固体撮像素子。
1. A color solid-state imaging device comprising a plurality of solid-state imaging devices formed on one main surface of a semiconductor substrate, and a single layer or a plurality of layers of colored filters laminated on the solid-state imaging devices, respectively. In a color solid-state image pickup device in which the number of layers of the colored filter is different between solid-state image pickup devices, a predetermined number of transparent filters are laminated on each single-layer or plural-layered colored filters on each solid-state image pickup device to form a solid-state image sensor. A color solid-state image sensor, wherein the number of filter layers on the image sensor is the same as the maximum number of layers of the colored filter.
JP13847387A 1987-06-02 1987-06-02 Color solid-state image sensor Expired - Fee Related JP2556856B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13847387A JP2556856B2 (en) 1987-06-02 1987-06-02 Color solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13847387A JP2556856B2 (en) 1987-06-02 1987-06-02 Color solid-state image sensor

Publications (2)

Publication Number Publication Date
JPS63301904A JPS63301904A (en) 1988-12-08
JP2556856B2 true JP2556856B2 (en) 1996-11-27

Family

ID=15222882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13847387A Expired - Fee Related JP2556856B2 (en) 1987-06-02 1987-06-02 Color solid-state image sensor

Country Status (1)

Country Link
JP (1) JP2556856B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006134740A1 (en) * 2005-06-17 2006-12-21 Toppan Printing Co., Ltd. Imaging element

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677083B2 (en) * 1983-09-20 1994-09-28 株式会社東芝 Method for manufacturing color filter
JPS62264005A (en) * 1986-05-06 1987-11-17 Mitsubishi Electric Corp Production of high precision color filter
JPS63135086A (en) * 1986-11-26 1988-06-07 Matsushita Electronics Corp Color separation filter
JPS63276002A (en) * 1987-05-08 1988-11-14 Toshiba Corp Color solid-state image pickup device and its manufacture

Also Published As

Publication number Publication date
JPS63301904A (en) 1988-12-08

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