JP2549769Y2 - Semiconductor package lead bending jig and lead bending apparatus using the same - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead bending jig for forming and correcting leads in a semiconductor package manufacturing process and a lead bending apparatus using the same.

[0002]

2. Description of the Related Art In a semiconductor package manufacturing process,
A lead bending apparatus has been used to form a lead into a predetermined shape or to correct a lead that has been bent too much.

For example, as shown in FIG. 1, a semiconductor package 20 is placed on a support 1, and a bending tool 4 is moved downward with a pressing tool 2 pressing a root of the lead 21. 21 was being bent. FIG. 2 shows a structure in which the base of the lead 21 of the semiconductor package 20 placed on the support 11 is held down by the pressing tool 12 and the roller-shaped bending tool 14 is moved downward, so that the lead is removed. 21 was to bend.
These supports 1, 11, pressing tools 2, 12, bending tools 4, 1,
As a material of a lead bending jig such as No. 4, a cemented carbide or a metal material (SKD steel) was generally used.

[0004]

However, since the above-mentioned conventional lead bending jig is made of a material mainly composed of metal, plated solder adheres to the surface of the lead during processing (build-up). It was easy. Further, conventional jigs and tools have poor abrasion resistance, so they are easily worn and deformed during use.

As described above, in the conventional lead bending jig, since the shape of the jig itself changes during use due to adhesion and wear of solder, the shape of the lead after molding and straightening changes, and the shape of the semiconductor package is reduced. There is a problem that a mounting defect occurs. For this reason, in the conventional lead bending apparatus, the line must be stopped after a relatively short use, and each jig must be replaced with a new one, resulting in poor production efficiency and extremely troublesome work.

[0006]

In view of the above, the present invention provides:
Al ₂ O ₃ —Ti having a porosity of 0.5% or less and having conductivity at least at the contact surface of the lead bending jig with the lead.
It is formed of a C-based sintered body, and a lead bending apparatus is configured using this jig. Note that, in the present invention, the lead bending jig specifically refers to a support for supporting the semiconductor package, a pressing tool for pressing the root of the lead, and a bending tool for bending the lead.

[0007]

[Action] Al ₂ O ₃ -TiC based sintered body of the present invention is particularly poor adhesion of solder, and since the voids of the surface is small, when used as a lead bending jigs to prevent solder adhering be able to. In addition, since this sintered body has excellent strength and hardness, it is not easily deformed, and since it has conductivity, generation of static electricity can be prevented.

[0008]

Embodiments of the present invention will be described below. The lead bending apparatus shown in FIG. 1 includes a support 1 for supporting a semiconductor package 20 and a pressing tool 2 for pressing the root of a lead 21. A guide shaft 5 and a spring 6 hold the pressing tool 2 against the pressing tool 2. The lifting platform 3 is supported so as to be vertically movable, and a bending tool 4 is provided at the tip of the lifting platform 3. And the semiconductor package 2
0 is placed on the support 1, and the bending tool 4 is moved downward with the pressing tool 2 pressing the base of the lead 21.
The lead 21 can be bent into a predetermined shape.

The example shown in FIG. 2 is a so-called roller type, which comprises a support 11 and a pressing tool 12 for supporting a semiconductor package 20, and has a vertically movable platform 13 which can move up and down. Roller-shaped bending tool 1 at the tip of table 13
4 is provided. Then, as shown in FIG. 2A, with the semiconductor package 20 placed on the support 11,
If the pressing tool 12 and the lift 13 are moved downward, the lead 21 can be bent as shown in FIG.

[0010] Then, the supporting members 1 and 11, the pressing member 2,
12, lead bending jigs such as bending tools 4 and 14 are A
Al ₂ O ₃ —Ti containing l ₂ O ₃ and TiC as main components
It is formed of a C-based sintered body (hereinafter referred to as Altic). This Altic is a material having very few voids on the surface and poor solder adhesion. Therefore, when used as a lead bending jig, the adhesion of solder can be extremely reduced.

It is not necessary to form all of the supporting tools 1, 11, the pressing tools 2, 12, and the bending tools 4, 14, which are the lead bending jigs, with Altic. At least one of them is formed with Altic. do it. In addition, each jig does not need to be entirely formed of Altic, and at least the contact surface with the lead 21 may be formed of Altic.

As shown in Table 1, the above Altic has a hardness (Hv) of 1900 kg / mm ² and a bending strength of 77.
Since it is as high as 00 kg / cm ² , it is excellent in abrasion resistance and chipping resistance, and hardly deforms even after long-term use. Furthermore, since it has excellent conductivity with a volume resistivity of 2 × 10 ⁻² Ω · cm, static electricity is easily released and does not adversely affect the semiconductor device.

[0013]

[Table 1]

In the above ALTIC, the main component A
Of the total 100% by weight of l ₂ O ₃ and TiC, Al ₂ O ₃
Is in the range of 20 to 80% by weight, and TiC is in the range of 80 to 20% by weight. This is because if Al ₂ O ₃ is less than 20% by weight, the sinterability deteriorates, while if Al ₂ O ₃ is more than 80% by weight, characteristics such as high hardness and conductivity are not exhibited.

Further, TiO ₂ , MgO, SiO ₂ , C
It is desirable to contain aO or the like in a total of 5 parts by weight or less in order to enhance sinterability. In addition to these, rare earth oxides and unavoidable impurities may be contained in a total of 5 parts by weight or less.

It is desirable that the Al ₂ O ₃ powder used in the above-mentioned altic has a high purity and a small particle diameter. Specifically, the purity is 90% or more, and the average particle size is 1
Those having a thickness of 0 μm or less are desirable. On the other hand, since TiC only needs to be finally present as a compound, any form may be added as a starting material, but usually, TiC powder is added in advance as a starting material.
In order to increase the sinterability and the density, it is desirable that the raw material has a TiC purity of 90% or more and an average particle diameter of 10 μm or less.

The raw material mixture is prepared by uniformly mixing the raw material powders. Generally, it is desirable that the raw material mixture be ground and mixed to a particle size of 10 μm or less and an average particle size of 1 μm or less. For these pulverizations, high-purity alumina balls, high-purity zirconia balls, and high-purity SiC balls may be used.

Further, the raw material mixture is filled in, for example, a graphite mold and hot-pressed in a vacuum or in a neutral or reducing atmosphere such as argon, helium, carbon monoxide, or the raw material mixture is rubber-coated. After pressing, baking under normal pressure or reduced pressure, or HI
By performing the P treatment, the ceramics of the present invention can be obtained. The firing temperature is 1300 to 2000
C. and a firing time of 1 to 5 hours are appropriate.

As described above, the altic of the present invention can be obtained. However, if the porosity is more than 0.5%, the abrasion resistance and the adhesion of the solder are deteriorated, so that the porosity is reduced. It is desirable to make it 0.5% or less.

EXPERIMENTAL EXAMPLE 1 Here, experiments were conducted on various ceramics and metal materials to examine the adhesion of solder. As shown in FIG. 3, various samples 41 are placed on a reciprocally movable table 42, and a holder 44 is arranged on the sample 41 so that a lead frame material 43 is pressed with a constant load P. The table 42 was reciprocated by the motor 45, and the amount of solder attached when the lead frame material 43 was slid on the sample 41 was examined. The size of the sample 42 is 30 × 15 mm and the thickness is 5 m
m, and the lead frame material 43 used was a 42 alloy obtained by applying solder to a thickness of 15 μm by borofluoric acid electrolytic plating. The load P was 6 kg / cm ² , the sliding speed was 20 mm / sec, and the total sliding distance was 50 m.

The amount of solder attached to each sample 41 was measured using a surface roughness meter on the surface of the sample 42 after the experiment.
As shown in FIG. 4, a portion protruding above the average line of the obtained cross-sectional curve is considered to be attached, and the average line direction length (X) and height (Y) of the attached portion are measured. The area S was approximated by S = 1 / 2ΣXY. That is, the larger the area S, the more the adhesion.

The state of adhesion was observed with an electron microscope.
These results are as shown in Table 2.

In this experiment, the Altic according to the present invention was composed of 70% by weight of Al ₂ O _{3 and} 30% by weight of TiC.
Those having a porosity of 0.1% or less were used.

[0024]

[Table 2]

As shown in Table 2, the measurement of the adhesion area S was 2
It was found that the adhesion amount of the altic was extremely small in each case. This is considered to be due to the fact that the Altic itself is a material with poor solder adhesion, and that there are few voids on the surface, so that solder adhesion is small.

Also, sapphire has very little adhesion of solder, but sapphire has no conductivity, so static electricity cannot be released and is not suitable for a lead bending tool.

Example 2 Next, using the lead bending apparatus shown in FIG. 1, a bending tool 4 made of Altic according to the present invention and a bending tool 4 made of SKD steel as a comparative example were mounted, and the lead bending was performed under the same conditions. A test was performed to determine the number of bends before replacement was required. As a result, in the comparative example, it was necessary to replace the battery with an average number of bending of 10,000 times.

As described above, according to the present invention, the lead bending jig is made of a conductive material having a porosity of 0.5% or less.
By forming at l ₂ O ₃ -TiC based sintered body, since it is hard particularly adhered solder, even if long-term use can be reduced solder deposition amount of the tooling. In addition, since this sintered body has excellent hardness and wear resistance, and has conductivity, it does not easily deform even when used as a lead bending jig for a long period of time, and can release static electricity, which adversely affects semiconductor devices. Many effects can be achieved, for example, no effect is exerted.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a semiconductor package lead bending apparatus according to the present invention;

FIGS. 2A and 2B are cross-sectional views showing other embodiments of the present invention.

FIG. 3 is a view showing an experimental apparatus for examining solder adhesion of various materials.

FIG. 4 is a chart for explaining a method of measuring a solder adhesion amount in an experiment of solder adhesion.

[Explanation of symbols]

 1, 11 ... Supporting tool 2, 12 ... Pressing tool 3, 13 ... Elevating table 4, 14 ... Bending tool 20 ... Semiconductor package 21 ... Lead

Claims (2)

(57) [Scope of request for utility model registration] A jig such as a support, a pressing tool, and a bending tool for bending a lead provided on a semiconductor package,
At least the surfaces of the jigs and tools which come into contact with the leads are made of conductive Al ₂ O ₃ —TiC having a porosity of 0.5% or less.
A lead bending jig for a semiconductor package, wherein the jig is formed of a sintered body. 2. A semiconductor device comprising: a support for supporting a semiconductor package; and a pressing tool for pressing and holding a lead of the semiconductor package. The bending tool moves and bends the lead while the pressing tool presses the lead. In the lead bending apparatus configured as described above, at least the surface of the jig such as the support tool, the pressing tool, the bending tool, which is in contact with the lead, is made of Al ₂ O ₃ —Ti having a porosity of 0.5% or less and having conductivity.
A lead bending device for a semiconductor package formed of a C-based sintered body.