JP2549187B2 - Ceramic substrate firing method - Google Patents

Ceramic substrate firing method

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Publication number
JP2549187B2
JP2549187B2 JP2119092A JP11909290A JP2549187B2 JP 2549187 B2 JP2549187 B2 JP 2549187B2 JP 2119092 A JP2119092 A JP 2119092A JP 11909290 A JP11909290 A JP 11909290A JP 2549187 B2 JP2549187 B2 JP 2549187B2
Authority
JP
Japan
Prior art keywords
ceramic substrate
firing
furnace
temperature
sintering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2119092A
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Japanese (ja)
Other versions
JPH0416566A (en
Inventor
雄二 渡辺
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Fujitsu Ltd
Original Assignee
Fujitsu Ltd
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Priority to JP2119092A priority Critical patent/JP2549187B2/en
Publication of JPH0416566A publication Critical patent/JPH0416566A/en
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Publication of JP2549187B2 publication Critical patent/JP2549187B2/en
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Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、セラミック基板の焼成方法に関する。The present invention relates to a method for firing a ceramic substrate.

〔従来の技術〕[Conventional technology]

従来、セラミック基板を焼成する場合には、例えば第
2図に示すように、積層された未焼成のセラミック基板
1をその裏面1aを下にして例えばアルミナを主成分とす
る焼結体からなる治具2の上に載置し、例えばアルミナ
を主成分とする焼結体からなるカバー3で覆ってから窒
素等の不活性ガスを充満させた焼成炉4に挿入し、焼成
炉4の上下左右に配置されたヒータ5を作動させて加熱
する、という手順で行われている。加熱は、例えば第3
図に示すように、セラミック基板1から有機バインダを
飛散させる目的で例えば約400℃程度の比較的低温でセ
ラミック基板1を約5時間にわたり加熱した後、セラミ
ックを焼結させる目的で例えば約1000℃程度の比較的高
温で約3時間にわたってセラミック基板1を加熱すると
いう手順で行われる。
2. Description of the Related Art Conventionally, when firing a ceramic substrate, for example, as shown in FIG. 2, a laminated unfired ceramic substrate 1 with a back surface 1a thereof facing down is made of a sintered body mainly composed of alumina, for example. Placed on the tool 2, covered with a cover 3 made of, for example, a sintered body containing alumina as a main component, and then inserted into a firing furnace 4 filled with an inert gas such as nitrogen. The procedure is to heat the heater 5 arranged in the above. The heating is, for example, the third
As shown in the figure, after heating the ceramic substrate 1 for about 5 hours at a relatively low temperature of about 400 ° C. for the purpose of scattering the organic binder from the ceramic substrate 1, for example, about 1000 ° C. for the purpose of sintering the ceramic. The ceramic substrate 1 is heated at a relatively high temperature of about 3 hours for about 3 hours.

又、例えば特開平3−275571号号公報に開示されてい
るように、多段に積み重ねたグリーンシート(セラミッ
ク基板)の焼成処理を2回に分け、1回目の焼成処理終
了後、上記多段に積み重ねられたグリーンシートを上下
反転させ、続いて該反転させたグリーンシートに対して
2回目の焼成処理を行う構成としたグリーンシートの多
段焼成方法も提案されている。
Further, as disclosed in, for example, Japanese Patent Application Laid-Open No. 3-275571, the firing process of the green sheets (ceramic substrates) stacked in multiple stages is divided into two steps, and after the first firing process is completed, the green sheets are stacked in the above multiple stages. There is also proposed a multi-stage firing method of a green sheet in which the obtained green sheet is turned upside down and then the turned green sheet is fired a second time.

この従来方法の第1焼成工程は未焼成のセラミック基
板に含有されているバインダを抜くために行われ、第2
焼成工程は主にグリーンシートを焼結させるために行わ
れる。そして、これら第1焼成工程と第2焼成工程との
間でグリーンシートを上下反転させることにより、第1
焼成及び第2焼成全体として各グリーンシートに均一な
焼成熱を印加し、第1焼成工程により生じた反りを第2
焼成工程により生じる反りによって解消させる。
The first firing step of this conventional method is performed to remove the binder contained in the unfired ceramic substrate.
The firing process is mainly performed for sintering the green sheet. Then, by turning the green sheet upside down between the first firing step and the second firing step,
A uniform firing heat is applied to each green sheet as a whole of the firing and the second firing, and the warpage caused by the first firing step is
It is eliminated by the warpage caused by the firing process.

この方法においては、第1焼成工程を行う第1焼成炉
及び第2焼成工程を行う第2焼成炉は同一構成の焼成炉
であり、炉内の温度分布はほぼ同じであるので、第1焼
成工程と第2焼成工程とはほぼ同じ焼成処理であり、同
じような熱処理を多段に積み重ねられたグリーンシート
の上下反転を挟んで繰り返すことにより、反りのない平
らな基板が得られる。即ち、第1焼成炉に入れられたグ
リーンシートは、第2焼成炉に入れられたグリーンシー
トと同様に一定の温度勾配で炉内温度まで加熱され、こ
れに引き続いて所定時間にわたって炉内温度に保持さ
れ、第1焼成炉から取り出されることにより第2焼成炉
から取り出された時と同様の温度勾配で冷却される。
In this method, the first firing furnace for performing the first firing step and the second firing furnace for performing the second firing step are firing furnaces having the same configuration, and the temperature distribution inside the furnace is almost the same, so the first firing The process and the second baking process are almost the same baking process, and a similar flat heat treatment is repeated by sandwiching the green sheets stacked in multiple stages upside down to obtain a flat substrate without warpage. That is, the green sheet placed in the first firing furnace is heated to the in-furnace temperature with a constant temperature gradient similarly to the green sheet placed in the second firing furnace, and subsequently, is heated to the in-furnace temperature for a predetermined time. By being held and taken out from the first baking furnace, it is cooled with the same temperature gradient as that taken out from the second baking furnace.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

ところで、従来のセラミック基板の焼成方法において
は、焼き上がったセラミック基板に比較的反りが顕著に
発生する。例えば360mm四方の大きさと15mm(焼成前)
程度の厚さを有するセラミック基板1を焼成すると、0.
9mm程度の反りが発生する。
By the way, in the conventional method for firing a ceramic substrate, the fired ceramic substrate is relatively warped. For example, 360mm square size and 15mm (before firing)
When firing the ceramic substrate 1 having a thickness of about 0.
A warp of about 9 mm occurs.

セラミック基板1に反りが発生する原因は、セラミッ
ク基板1の裏面1aには熱が雰囲気によって加熱された治
具2から伝導伝達されるのに対し、セラミック基板1の
表面1bには雰囲気から熱が伝導伝達されるため、セラミ
ック基板1の表面側と裏面1a側とでの温度履歴に差異が
生じ、表裏両面の焼結度に差異が生じることにあると考
えられている。
The reason why the ceramic substrate 1 is warped is that heat is transferred to the back surface 1a of the ceramic substrate 1 from the jig 2 heated by the atmosphere, while heat is transferred from the atmosphere to the front surface 1b of the ceramic substrate 1. It is considered that the conduction of heat causes a difference in the temperature history between the front surface side and the back surface 1a side of the ceramic substrate 1, resulting in a difference in the degree of sintering between the front and back surfaces.

上記特開平3−275571号号公報に開示されたグリーン
シートの多段焼成方法はセラミック基板の反りを減少さ
せる上で有効である。しかしながら、この方法では、グ
リーンシートを炉内に入れてから炉内温度に達する温度
勾配のグリーンシートの比熱及び炉内温度によって決定
されるので、第1焼成工程において比較的短時間でグリ
ーンシートのガラス化が開始し、ガラス化したグリーン
シート内にバインダの一部が封じ込められてブローホー
ルが発生するという問題が生じる。
The multi-stage firing method for green sheets disclosed in the above-mentioned Japanese Patent Laid-Open No. 3-275571 is effective in reducing the warpage of the ceramic substrate. However, in this method, since it is determined by the specific heat of the green sheet having a temperature gradient that reaches the temperature in the furnace after the green sheet is put in the furnace and the temperature in the furnace, the green sheet is heated in a relatively short time in the first firing step. Vitrification starts, and a part of the binder is confined in the vitrified green sheet to cause blow holes.

本発明は、上記の事情を鑑みてなされたものであり、
ブローホールを発生させることなく、焼成によるセラミ
ック基板の反りを減少させることができるセラミック基
板の焼成方法を提供することを目的とする。
The present invention has been made in view of the above circumstances,
An object of the present invention is to provide a method for firing a ceramic substrate, which can reduce the warpage of the ceramic substrate due to firing without generating blowholes.

〔課題を解決するための手段〕[Means for solving the problem]

本発明は、例えば第1図に示すように、未焼成のセラ
ミック基板を所定時間加熱してバインダを飛散させる有
機成分飛散工程と、この有機成分飛散工程に続いてセラ
ミック基板を焼結させる第1焼結工程と、第1焼結工程
の終了後のこのセラミック基板を上下反転させてから焼
成する第2工程とからなることを特徴としている。
For example, as shown in FIG. 1, the present invention includes a step of heating an unfired ceramic substrate for a predetermined time to scatter the binder, and a step of sintering the ceramic substrate after the step of scattering the organic component. It is characterized by comprising a sintering process and a second process in which the ceramic substrate after the first sintering process is turned upside down and then fired.

〔作用〕[Action]

本発明においては、セラミック基板1の有機成分を飛
散させた後、セラミック基板1を焼結させる過程でセラ
ミック基板1が表裏反転されるので、セラミック基板1
の両面がいずれも治具に接触しながら加熱される期間と
雰囲気に接触しながら加熱される期間とを経験すること
になり、温度履歴の差異が少なくなり、セラミック基板
1の表裏両面の焼結度の差異が小さくなる。
In the present invention, since the ceramic substrate 1 is turned upside down in the process of sintering the ceramic substrate 1 after scattering the organic components of the ceramic substrate 1, the ceramic substrate 1
Both sides of the ceramic substrate 1 will experience a period of heating while being in contact with the jig and a period of being heated while being in contact with the atmosphere, the difference in temperature history will be small, and both front and back surfaces of the ceramic substrate 1 will be sintered. The difference in degree becomes small.

〔実 施 例〕〔Example〕

以下、本発明の一実施例に係るセラミック基板の焼成
方法を図面に基づき説明する。
Hereinafter, a method of firing a ceramic substrate according to an embodiment of the present invention will be described with reference to the drawings.

このセラミック基板の焼成方法は加熱の温度プロファ
イルを除けば、従来と同様である。
The method of firing the ceramic substrate is the same as the conventional one except for the heating temperature profile.

即ち、第2図に示すように、未焼成のセラミック基板
1をアルミナを主成分とする焼結体からなる治具2の上
に裏面1aを下にして載置し、アルミナを主成分とする焼
結体からなるカバー3で覆ってから窒素を充満させた焼
成炉4に挿入し、焼成炉4の上下左右に配置されたヒー
タ5を作動させて加熱する。
That is, as shown in FIG. 2, an unfired ceramic substrate 1 is placed with a back surface 1a facing down on a jig 2 made of a sintered body containing alumina as a main component, and alumina is a main component. After being covered with a cover 3 made of a sintered body, it is inserted into a firing furnace 4 filled with nitrogen, and heaters 5 arranged at the top, bottom, left and right of the firing furnace 4 are operated to heat.

加熱は、第1図(a)に示すように、有機成分飛散工
程及び焼結工程の前半工程を連続して行う第1焼成と、
第2図(b)に示すように焼結工程の後半工程を行う第
2焼成とに分けて行われる。
The heating is, as shown in FIG. 1 (a), the first firing in which the organic component scattering step and the first half step of the sintering step are continuously performed,
As shown in FIG. 2 (b), it is performed separately from the second firing, which is the latter half of the sintering step.

第1焼成においては、まず、有機成分飛散工程が行わ
れる。即ち、炉内温度を室温から30℃/時間の温度勾配
で上昇させ、約400℃程度の温度に達した後、約5時間
にわたってこの温度に保持する。これにより、セラミッ
ク基板1内の有機成分が炉内に飛散する。
In the first firing, first, an organic component scattering step is performed. That is, the temperature in the furnace is raised from room temperature with a temperature gradient of 30 ° C./hour, and after reaching a temperature of about 400 ° C., this temperature is maintained for about 5 hours. As a result, the organic components in the ceramic substrate 1 scatter in the furnace.

次に、有機成分飛散工程に連続して焼結工程の前半工
程が行われる。すなわち、窒素中で炉内温度を400℃か
ら40゜/時間程度の温度勾配で昇温させ、700℃以上に
なるとセラミック粒子のガラス化が起こるので焼結工程
に入ることになる。焼結工程では、800〜900℃程度(こ
こでは900℃程度)の比較的高温で約4時間にわたりセ
ラミック基板1を加熱する。この焼結工程の前半工程で
は、セラミック基板1はガラス点まで昇温したところか
らガラス化し始めて順次その範囲が広がって行くが、ガ
ラス化の進み具合は比較的高温になるセラミック基板1
の裏面1a側では速く、表面1b側では焼結がゆっくりと進
む。ガラス化の進行が速いセラミック基板1の裏面1a側
では焼結度が高く、焼結に伴う収縮率も高くなるので、
セラミック基板1は中高に反り返ることになる。
Next, the first half step of the sintering step is performed continuously with the organic component scattering step. That is, the temperature in the furnace is raised in nitrogen from 400 ° C. with a temperature gradient of about 40 ° / hour, and when it rises to 700 ° C. or more, vitrification of the ceramic particles occurs, so that the sintering process is started. In the sintering step, the ceramic substrate 1 is heated at a relatively high temperature of about 800 to 900 ° C. (here, about 900 ° C.) for about 4 hours. In the first half of this sintering step, the ceramic substrate 1 begins to vitrify from the point where the temperature rises to the glass point and the range thereof gradually expands, but the vitrification progresses to a relatively high temperature.
On the back surface 1a side, the sintering is fast, and on the front surface 1b side, the sintering proceeds slowly. Since the degree of sintering is high on the back surface 1a side of the ceramic substrate 1 in which vitrification proceeds rapidly, and the shrinkage rate accompanying sintering also increases,
The ceramic substrate 1 will warp back to the middle height.

炉内温度を室温まで低下させた後、セラミック基板1
を焼成炉4から取り出し、表裏反転させて治具2の上に
載置し、アルミナを主成分とする焼結体からなるカバー
3で覆って窒素を充満させた焼結炉4に挿入し、焼結工
程の後半よりなる第2焼成工程を行う。
After lowering the furnace temperature to room temperature, the ceramic substrate 1
Was taken out of the firing furnace 4, turned upside down, placed on the jig 2, and covered with a cover 3 made of a sintered body containing alumina as a main component and inserted into the sintering furnace 4 filled with nitrogen. A second firing step, which is the latter half of the sintering step, is performed.

即ち、焼結炉4の上下左右に配置されたヒータ5を作
動させて加熱し、炉内温度を室温から80℃/Hの温度勾配
で上昇させ、1000℃程度の比較的高温に約3時間保持し
た後、自然放冷により低下させる。
That is, the heaters 5 arranged on the upper, lower, left and right sides of the sintering furnace 4 are operated to heat them, and the temperature inside the furnace is increased with a temperature gradient of 80 ° C / H from room temperature to a relatively high temperature of about 1000 ° C for about 3 hours. After holding, it is lowered by natural cooling.

この第2焼成工程では、第1焼成工程で治具2に接触
しながら加熱されていた裏面1aが雰囲気に接触しながら
加熱され、第1焼成工程で雰囲気に接触しながら加熱さ
れていた表面1bが治具2に接触しながら加熱されること
になる。
In this second firing step, the back surface 1a, which was heated while being in contact with the jig 2 in the first firing step, was heated while being in contact with the atmosphere, and the front surface 1b, which was heated while being in contact with the atmosphere in the first firing step. Will be heated while contacting the jig 2.

この第2焼成工程でもセラミック基板1のガラス点ま
で昇温したところからガラス化し始めて順次その範囲が
広がって行き、ガラス化の進み具合は比較的高温になる
セラミック基板1の表面1b側では速く、裏面1a側ではガ
ラス化がゆっくりと進む。そして、粒子同士が焼結され
て収縮する。しかし、セラミック基板1の裏面1a側はす
でに第1焼成工程で焼結が進んでいるので、セラミック
基板1の表面1b側と裏面1a側との収縮量の差は小さくな
り、セラミック基板1の反りは小さくなる。例えば、36
0mm四方、厚さ15mm(焼成前)のセラミック基板1の場
合、従来方法によれば0.9mm程度の反りが発生していた
が、この実施例では反りの大きさを0.4mm程度に減少さ
せることができた。
Also in this second firing step, vitrification starts from the point where the temperature rises to the glass point of the ceramic substrate 1 and its range gradually expands. The progress of vitrification is relatively high on the surface 1b side of the ceramic substrate 1 which is relatively high. Vitrification proceeds slowly on the back surface 1a side. Then, the particles are sintered and contracted. However, since the back surface 1a side of the ceramic substrate 1 has already been sintered in the first firing step, the difference in shrinkage amount between the front surface 1b side and the back surface 1a side of the ceramic substrate 1 becomes small, and the warpage of the ceramic substrate 1 Becomes smaller. For example, 36
In the case of the ceramic substrate 1 having a size of 0 mm square and a thickness of 15 mm (before firing), a warp of about 0.9 mm occurred according to the conventional method, but in this embodiment, the warp size should be reduced to about 0.4 mm. I was able to.

〔発明の効果〕〔The invention's effect〕

以上のように、本発明によれば、有機成分飛散工程で
バインダを炉内に飛散させてから第1焼結工程に入るの
で、セラミック基板内にバインダが残留することがな
く、バインダの残留によるブローホールが発生する恐れ
がなくなる。
As described above, according to the present invention, since the binder is scattered in the furnace in the organic component scattering step and then the first sintering step is started, the binder does not remain in the ceramic substrate, and There is no risk of blowholes.

又、第1焼結工程の後、セラミック基板を表裏反転さ
せて第2焼結工程を行い、セラミック基板の両面に治具
に接触しながら加熱される期間と雰囲気に接触しながら
加熱される期間とを経験させるので、表裏両面の温度履
歴の差異が少なくなり、焼結度の差異が小さくなる結
果、セラミック基板の反りを減少させることができる。
After the first sintering step, the ceramic substrate is turned upside down and the second sintering step is performed, and both sides of the ceramic substrate are heated while being in contact with the jig and being heated while being in contact with the atmosphere. Since the difference between the temperature histories on the front and back surfaces is reduced and the difference in the degree of sintering is reduced, the warp of the ceramic substrate can be reduced.

また、セラミック基板の反りを減少できるので、後に
行われる研磨工程の研磨時間を短縮することができると
ともに、研磨による内層パターンの露出や破断を防止す
ることができる等の波及的効果を得ることができる。
Further, since the warp of the ceramic substrate can be reduced, it is possible to shorten the polishing time in the polishing step to be performed later and to obtain a ripple effect such as preventing the inner layer pattern from being exposed or broken due to polishing. it can.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例に係るセラミック基板の焼成
方法の温度プロファイル図であり、第2図は焼成炉の構
成図であり、第3図は従来方法の温度プロファイル図で
ある 図中、 1……セラミック基板。
FIG. 1 is a temperature profile diagram of a ceramic substrate firing method according to an embodiment of the present invention, FIG. 2 is a configuration diagram of a firing furnace, and FIG. 3 is a temperature profile diagram of a conventional method. , 1 ... Ceramic substrate.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】未焼成のセラミック基板を所定時間加熱し
てバインダを飛散させる有機成分飛散工程と、この有機
成分飛散工程に続いてセラミック基板を焼結させる第1
焼結工程と、第1焼結工程の終了後のこのセラミック基
板を上下反転させてから焼成する第2焼成工程とからな
ることを特徴とするセラミック基板の焼成方法。
1. An organic component scattering step of heating an unsintered ceramic substrate for a predetermined time to scatter a binder, and a ceramic substrate is sintered following this organic component scattering step.
A method of firing a ceramic substrate, comprising: a sintering process; and a second firing process in which the ceramic substrate after the completion of the first sintering process is turned upside down and then fired.
JP2119092A 1990-05-08 1990-05-08 Ceramic substrate firing method Expired - Lifetime JP2549187B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2119092A JP2549187B2 (en) 1990-05-08 1990-05-08 Ceramic substrate firing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2119092A JP2549187B2 (en) 1990-05-08 1990-05-08 Ceramic substrate firing method

Publications (2)

Publication Number Publication Date
JPH0416566A JPH0416566A (en) 1992-01-21
JP2549187B2 true JP2549187B2 (en) 1996-10-30

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