JP2536404B2 - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

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Publication number
JP2536404B2
JP2536404B2 JP5152968A JP15296893A JP2536404B2 JP 2536404 B2 JP2536404 B2 JP 2536404B2 JP 5152968 A JP5152968 A JP 5152968A JP 15296893 A JP15296893 A JP 15296893A JP 2536404 B2 JP2536404 B2 JP 2536404B2
Authority
JP
Japan
Prior art keywords
circuit
frequency
under test
semiconductor integrated
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP5152968A
Other languages
Japanese (ja)
Other versions
JPH06342042A (en
Inventor
浩之 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP5152968A priority Critical patent/JP2536404B2/en
Publication of JPH06342042A publication Critical patent/JPH06342042A/en
Application granted granted Critical
Publication of JP2536404B2 publication Critical patent/JP2536404B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はウエハ上でのプロ−バに
よる高周波テストを可能にする半導体集積回路装置に関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device which enables a high frequency test by a prober on a wafer.

【0002】[0002]

【従来の技術】 近年、半導体集積回路装置の集積化が進
み、ウエハ上でのプロ−バによる高周波テストが困難に
なりつつある。このため、リング発振器及び分周器を内
蔵せしめた半導体集積回路装置が公知である(参照:特
開昭59−181548号公報)。すなわち、図3に示
すように、被試験回路(論理回路)1の入力には奇数の
反転ゲ−トよりなるリング発振器2がヒュ−ズ4を介し
て接続され、被試験回路1の出力には分周器3がヒュ−
ズ5を介して接続され、被試験回路1の出力周波数を測
定可能な周波数まで分周する。この分周器3の出力周波
数をプロ−バにより測定することにより被試験回路1の
遅延時間を計算できる。テスト終了後にヒュ−ズ4、5
を溶断する。
2. Description of the Related Art In recent years, integration of semiconductor integrated circuit devices has progressed, and it has become difficult to perform a high frequency test on a wafer by a prober. Therefore, a semiconductor integrated circuit device incorporating a ring oscillator and a frequency divider is known (see Japanese Patent Laid-Open No. 59-181548). That is, as shown in FIG. 3, a ring oscillator 2 composed of an odd number of inverting gates is connected to the input of the circuit under test (logic circuit) 1 through a fuse 4 and is connected to the output of the circuit under test 1. Is the frequency divider 3
And the frequency of the output of the circuit under test 1 is divided to a measurable frequency. The delay time of the circuit under test 1 can be calculated by measuring the output frequency of the frequency divider 3 with a prober. After the test, fuses 4 and 5
To melt down.

【0003】また、ウエハ上でプロ−バにより高周波テ
スト可能な他の半導体集積回路装置として図4に示すも
のがある(参照:特開昭60−89937号公報)。な
お、図4の装置は被試験回路(ゲ−トアレイ等)の基本
ゲ−トの遅延時間を評価するものであって、被試験回路
に組込むものである。リセット回路6、カウンタ回路7
及び出力回路8が付加されている。図5の動作タイミン
グを参照すると、図5の(B)の外部リセットクロック
IRESETを受けてリセット回路6は図5の(C)に
示すリセット信号RSTを発生し、この結果、分周器3
及びカウンタ回路7はリセット(初期化)され、リング
発振器2の発振が停止する。次に、図5の(A)に示す
外部基準クロックICLKがハイレベル(”1”)とな
ると、リング発振器2の発振が、図5の(D)に示すご
とく、開始する。また、同時に、カウンタ回路7のカウ
ントイネ−ブル端子(CE)がハイレベル(”1”)と
なるので、カウンタ回路にはリセットから開放されてカ
ウント入力端子(C)の図5の(D)に示すクロックを
計数し始める。この計数動作は基準クロックICLKが
ハイレベル(”1”)の間だけ継続し、基準クロックI
CLKがロ−レベル(”0”)となると、リング発振器
2はル−プが開放されるために発振を停止する。このよ
うにして、基準クロックICLKがハイレベル状態での
内部クロックのパルス数がカウンタ回路7に保持され、
その値は出力回路8によって出力され、この結果、リン
グ発振器2の基本ゲ−トの遅延時間を求めることができ
る。
Another semiconductor integrated circuit device capable of high-frequency testing on a wafer by a prober is shown in FIG. 4 (see Japanese Patent Laid-Open No. 60-89937). The device shown in FIG. 4 evaluates the delay time of the basic gate of the circuit under test (gate array etc.) and is incorporated in the circuit under test. Reset circuit 6 and counter circuit 7
And an output circuit 8 is added. Referring to the operation timing of FIG. 5, the reset circuit 6 generates the reset signal RST shown in FIG. 5C in response to the external reset clock IRESET of FIG. 5B, and as a result, the frequency divider 3
The counter circuit 7 is reset (initialized), and the oscillation of the ring oscillator 2 is stopped. Next, when the external reference clock ICLK shown in FIG. 5A becomes high level (“1”), the oscillation of the ring oscillator 2 starts as shown in FIG. 5D. At the same time, since the count enable terminal (CE) of the counter circuit 7 becomes high level ("1"), the counter circuit is released from reset and the count input terminal (C) of FIG. Start counting the clocks shown in. This counting operation continues only while the reference clock ICLK is at high level (“1”),
When CLK becomes low level (“0”), the ring oscillator 2 stops oscillation because the loop is opened. In this way, the number of pulses of the internal clock when the reference clock ICLK is at the high level is held in the counter circuit 7,
The value is output by the output circuit 8, and as a result, the delay time of the basic gate of the ring oscillator 2 can be obtained.

【0004】[0004]

【発明が解決しようとする課題】 しかしながら、図3
に示す半導体集積回路装置においては、被試験回路1の
動作周波数より低いが、周波数測定を直接必要とし、こ
の結果、特殊のテスト装置を必要とし、しかも、プロ−
バとの接触抵抗等により測定精度と再現性が劣るという
課題がある。また、図4に示す半導体集積回路装置にお
いては、基準クロックICLK内のパルス数を計数して
いるので、基準クロックICLKの発生、信号IRES
ETとの正しい位相調整を必要とし、従って、やはり特
殊のテスト装置を必要とし、しかも、遅延時間をカウン
タ回路7のディジタルかつ直流の出力で求めているので
必ずしも実際の動作周波数が得られないという課題があ
る。従って、本発明の目的は、特殊のテスト装置を必要
とせず、測定精度が高く、再現性が良く、実際の動作周
波数が得られるウエハ上でプロ−バにより高周波テスト
可能な半導体集積回路装置を提供することにある。
However, as shown in FIG.
In the semiconductor integrated circuit device shown in FIG. 1, although it is lower than the operating frequency of the circuit under test 1, frequency measurement is directly required, and as a result, a special test device is required, and a professional
There is a problem that measurement accuracy and reproducibility are poor due to contact resistance with the bar. Further, in the semiconductor integrated circuit device shown in FIG. 4, since the number of pulses in the reference clock ICLK is counted, the generation of the reference clock ICLK and the signal IRES
It requires correct phase adjustment with ET, and therefore also requires a special test device, and since the delay time is obtained by the digital and DC output of the counter circuit 7, the actual operating frequency cannot always be obtained. There are challenges. Therefore, an object of the present invention is to provide a semiconductor integrated circuit device capable of performing a high frequency test by a prober on a wafer that does not require a special test device, has high measurement accuracy, good reproducibility, and can obtain an actual operating frequency. To provide.

【0005】[0005]

【課題を解決するための手段】 上述の課題を解決する
ために本発明は、被試験回路に所定周波数の信号を発生
する発振回路、被試験回路からの出力信号を遅延する遅
延回路、遅延回路からの遅延された信号と被試験回路か
らの出力信号との乗算を行う乗算回路、この乗算回路の
出力を積分する積分回路を設け、積分回路の出力をプロ
ーバにより測定するようにした。
In order to solve the above problems, the present invention provides an oscillator circuit for generating a signal of a predetermined frequency in a circuit under test, a delay circuit for delaying an output signal from the circuit under test, and a delay circuit. delayed signal and multiplying circuit for multiplying the output signal from the circuit under test from the integrating circuit for integrating the output of the multiplication circuit is provided, professional output of the integration circuit
I measured it with a server.

【作用】 上述の手段によれば、遅延回路、乗算回路及
び積分回路は周波数/電圧変換回路として作用し、積分
回路のアナログ直流出力、つまり、周波数/電圧変換回
路の出力により被試験回路の動作周波数を測定する
According to the above means, the delay circuit, the multiplication circuit and the integration circuit act as a frequency / voltage conversion circuit ,
The analog DC output of the circuit, that is, the frequency / voltage conversion circuit
The operating frequency of the circuit under test is measured by the output of the circuit .

【0006】[0006]

【実施例】図1は本発明に係る半導体集積回路装置の一
実施例を示す回路図である。図1において、被試験回路
1はたとえばプリスケ−ラ回路であって、入力端子I
N、出力端子OUT1、OUT2を有する。この場合、
出力端子OUT1、OUT2は同一周波数であり、従っ
て、同一の端子でもよく、また、出力端子OUT1、O
UT2はハイブリット回路に置換し得る。リング発振器
1は被試験回路1の動作周波数もしくはそれ以上の周波
数の信号を発生する。9は遅延回路、10は乗算回路で
あってアナログではミキサ回路、ディジタルでは排他的
論理和回路、11は積分回路である。
1 is a circuit diagram showing an embodiment of a semiconductor integrated circuit device according to the present invention. In FIG. 1, the circuit under test 1 is, for example, a prescaler circuit and has an input terminal I.
It has N and output terminals OUT1 and OUT2. in this case,
The output terminals OUT1 and OUT2 have the same frequency, and thus may be the same terminal, and the output terminals OUT1 and O2 may be the same.
UT2 may be replaced by a hybrid circuit. The ring oscillator 1 generates a signal having a frequency equal to or higher than the operating frequency of the circuit under test 1. Reference numeral 9 is a delay circuit, 10 is a multiplication circuit, which is a mixer circuit in analog, an exclusive OR circuit in digital, and 11 is an integrating circuit.

【0007】上述の遅延回路9、乗算回路10及び積分
回路11は周波数/電圧変換回路を構成することにな
る。すなわち、被試験回路1の出力端子OUT1の信号
は遅延回路9を介して乗算回路10の一入力に入力さ
れ、また、被試験回路1の出力端子OUT2の信号は乗
算回路10の他の入力に直接入力される。このとき、乗
算回路10に入力する2つの信号電圧をv1 、v2
し、被試験回路1の動作角周波数をωとすれば、 v1 =V1 ・sin(ωt−θ) ─(1) v2 =V2 ・sin ωt ─(2) ただし、V1 、V2 は定数、θは遅延回路9による遅延
位相、となる。ここで、遅延回路9の電気長をL、遅延
回路9への入力信号の周波数、波長をf、λとすれば、 θ=(L/λ−n)・2π =2πf・L−2πn =ωL−2πn ─(3) ただし、nは定数である。従って、遅延回路9による遅
延位相θと入力周波数f(ω)とは比例関係にある。
The above delay circuit 9, multiplication circuit 10 and integration circuit 11 constitute a frequency / voltage conversion circuit. That is, the signal at the output terminal OUT1 of the circuit under test 1 is input to one input of the multiplication circuit 10 via the delay circuit 9, and the signal at the output terminal OUT2 of the circuit under test 1 is input to the other input of the multiplication circuit 10. It is entered directly. At this time, if the two signal voltages input to the multiplication circuit 10 are v 1 and v 2, and the operating angular frequency of the circuit under test 1 is ω, then v 1 = V 1 · sin (ωt−θ) − (1 ) V 2 = V 2 · sin ωt (2) where V 1 and V 2 are constants, and θ is the delay phase of the delay circuit 9. Here, if the electrical length of the delay circuit 9 is L, and the frequency and wavelength of the input signal to the delay circuit 9 are f and λ, then θ = (L / λ−n) · 2π = 2πf · L−2πn = ωL -2πn- (3) where n is a constant. Therefore, the delay phase θ of the delay circuit 9 and the input frequency f (ω) are in a proportional relationship.

【0008】また、乗算回路10をミキサ−回路で構成
した場合には、乗算回路10の出力電圧v0 は、
(1)、(2)式より、 v0 =V1 ・V2 =V1 ・V2 ・sin(ωt−θ)・sinωt =(1/2)・V1 ・V2 ・(cosθ−cos(2ωt−θ))─(4 ) となる。(4)式の第2項の交流成分は積分回路11に
よって取除かれるので、積分回路11の出力電圧v0'
は、 v0'=(1/2)・V1 ・V2 ・cosθ ─(5) と直流成分のみとなる。この積分回路11の出力電圧v
0'は外部出力端子12に得られる。
When the multiplication circuit 10 is composed of a mixer circuit, the output voltage v 0 of the multiplication circuit 10 is
From equations (1) and (2), v 0 = V 1 · V 2 = V 1 · V 2 · sin (ωt−θ) · sin ωt = (½) · V 1 · V 2 · (cos θ-cos (2ωt−θ)) − (4). Since the AC component of the second term of the equation (4) is removed by the integrating circuit 11, the output voltage v 0 'of the integrating circuit 11
Is a direct current component with v 0 '= (1/2) · V 1 · V 2 · cos θ ─ (5). Output voltage v of this integration circuit 11
0'is available at the external output terminal 12.

【0009】上述のごとく、遅延位相θと周波数fとは
比例関係にある。従って、(5)式から周波数fと出力
電圧v0'との関係は図2に示すごとくなる。従って、出
力電圧v0'から周波数fを知ることができる。なお、図
1の遅延回路9に位相変調器等の所望の遅延を有する図
路を付加し、これにより、周波数検出範囲の変更もなし
得る。
As described above, the delay phase θ and the frequency f have a proportional relationship. Therefore, the relationship between the frequency f and the output voltage v 0 'is obtained from the equation (5) as shown in FIG. Therefore, the frequency f can be known from the output voltage v 0 '. It should be noted that the delay circuit 9 shown in FIG. 1 may be provided with a circuit having a desired delay such as a phase modulator, thereby changing the frequency detection range.

【0010】[0010]

【発明の効果 】以上説明したように本発明によれば、高
周波信号を直接測定することなく、周波数/電圧変換特
性によりアナログ直流電圧得ているので、特殊のテスト
装置を必要とせず、通常のプロ−バで高周波テストを行
うことができ、また、測定精度が高くかつ再現性が良い
実際の動作周波数を得ることができる。
As described above, according to the present invention, since an analog DC voltage is obtained by frequency / voltage conversion characteristics without directly measuring a high frequency signal, a special test device is not required, A high frequency test can be performed by a prober, and an actual operating frequency with high measurement accuracy and good reproducibility can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る半導体集積回路装置の一実施例を
示す回路図である。
FIG. 1 is a circuit diagram showing an embodiment of a semiconductor integrated circuit device according to the present invention.

【図2】図1の周波数/電圧特性を示すグラフである。FIG. 2 is a graph showing frequency / voltage characteristics of FIG.

【図3】従来の半導体集積回路装置を示すブロック回路
図である。
FIG. 3 is a block circuit diagram showing a conventional semiconductor integrated circuit device.

【図4】他の従来の半導体集積回路装置を示すブロック
回路図である。
FIG. 4 is a block circuit diagram showing another conventional semiconductor integrated circuit device.

【図5】図4の装置の動作を示すタイミング図である。5 is a timing diagram illustrating the operation of the apparatus of FIG.

【符号の説明】[Explanation of symbols]

1─被試験回路 2─リング発振器 3─分周器 4、5─ヒュ−ズ 6─リセット回路 7─カウンタ回路 8─出力回路 9─遅延回路 10─乗算回路 11─積分回路 12─外部端子 1-Circuit under test 2-Ring oscillator 3-Frequency divider 4, 5-Fuse 6-Reset circuit 7-Counter circuit 8-Output circuit 9-Delay circuit 10-Multiplier circuit 11-Integrator circuit 12-External terminal

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 被試験回路(1)を有する半導体集積回
路装置において、 前記被試験回路に所定周波数の信号を発生する発振回路
(2)と、 前記被試験回路からの出力信号を遅延する遅延回路
(9)と、 該遅延回路からの遅延された信号と前記被試験回路から
の出力信号との乗算を行う乗算回路(10)と、 該乗算回路の出力を積分する積分回路(11)とを具備
し、該積分回路のアナログ直流出力をプローバにより
定することにより前記被試験回路の動作周波数を測定す
るようにしたことを特とする半導体集積回路装置。
1. A semiconductor integrated circuit device having a circuit under test (1), an oscillation circuit (2) for generating a signal of a predetermined frequency in the circuit under test, and a delay for delaying an output signal from the circuit under test. A circuit (9), a multiplication circuit (10) for multiplying the delayed signal from the delay circuit and an output signal from the circuit under test, and an integration circuit (11) for integrating the output of the multiplication circuit The analog DC output of the integrating circuit is measured by a prober.
The semiconductor integrated circuit device according to feature that it has to measure the operating frequency of the circuit under test by a constant.
【請求項2】 前記遅延回路は位相変調器を内蔵する請
求項1に記載の半導体集積回路装置。
2. The semiconductor integrated circuit device according to claim 1, wherein the delay circuit has a built-in phase modulator.
JP5152968A 1993-05-31 1993-05-31 Semiconductor integrated circuit device Expired - Lifetime JP2536404B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5152968A JP2536404B2 (en) 1993-05-31 1993-05-31 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5152968A JP2536404B2 (en) 1993-05-31 1993-05-31 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPH06342042A JPH06342042A (en) 1994-12-13
JP2536404B2 true JP2536404B2 (en) 1996-09-18

Family

ID=15552094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5152968A Expired - Lifetime JP2536404B2 (en) 1993-05-31 1993-05-31 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JP2536404B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7554332B2 (en) * 2006-03-10 2009-06-30 Advantest Corporation Calibration apparatus, calibration method, testing apparatus, and testing method
US7541815B2 (en) * 2006-03-10 2009-06-02 Advantest Corporation Electronic device, testing apparatus, and testing method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57158567A (en) * 1981-03-26 1982-09-30 Pioneer Electronic Corp Frequency and voltage converting circuit
JPS59181548A (en) * 1983-03-31 1984-10-16 Fujitsu Ltd Semiconductor device
JPS6089937A (en) * 1983-10-24 1985-05-20 Nec Corp Integrated circuit device

Also Published As

Publication number Publication date
JPH06342042A (en) 1994-12-13

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