JP2526326B2 - Exposure processing system equipment - Google Patents

Description

Detailed Description of the Invention

[Table of Contents] Industrial Application Field of the Prior Art (FIGS. 16 to 18) Problem to be Solved by the Invention Means for Solving the Problem (FIGS. 1 to 3) Working Example (1) First (2) Description of the second embodiment (FIGS. 13 to 15) Effect of the invention

[0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure processing system apparatus, a charged particle beam exposure apparatus and a charged particle beam exposure method. More specifically, it is based on exposure data created by an LSI design processing system. The present invention relates to an overall processing system for performing block pattern exposure processing, an exposure apparatus, and an exposure method.

In recent years, with the high integration and high density of LSIs, exposure of a fine pattern has replaced photolithography.
A method using a charged particle beam, for example, a drawing process using an electron beam or an X-ray is being shifted.

By the way, according to the conventional exposure processing system, in order to improve the processing efficiency, a stencil mask having a desired shape formed as an opening is disposed near the center of the beam optical axis, and the opening is provided in the opening. By irradiating the beam, the semiconductor wafer is irradiated with the shaped beam in advance,
A block exposure method for exposing various circuit patterns of an LSI has been developed.

However, in the LSI design processing system, patterns of LSI wiring, contact holes, etc., and repetitive patterns of cell parts, etc. are uniformly processed to create variable figure exposure data based on the design data.

In the exposure processing system, the variable graphic exposure data created in the LSI design processing system is collated with the block exposure data of the exposure processing system. For this reason, in the LSI design processing system, when the data handling amount accompanying the high integration and the high density of the semiconductor integrated circuit increases, it takes a lot of processing time to create the variable figure exposure data. The matching process becomes more and more complicated, and a lot of time is required for the block pattern selection process.

As a result, according to the exposure processing system according to the conventional example, the speeding up of the data processing of the LSI design processing system is hindered, and the throughput of the exposure apparatus is lowered.

Therefore, the exposure processing system and the LSI design processing are performed without uniformly converting the design data of the LSI into only the variable figure exposure data, and without performing the data collation processing of the exposure processing system when selecting the block pattern. With the system, it has common mediation data regarding the block pattern, efficiently based on the mediation data, and
There is a demand for an exposure processing system, an exposure apparatus, and an exposure method capable of performing block exposure processing at high speed.

[0009]

16 to 18 are explanatory views according to a conventional example. FIG. 16 is a configuration diagram of an electron beam exposure apparatus according to a conventional example.

In FIG. 16, a device for exposing a semiconductor wafer 7 to an LSI pattern by using a rectangular electron beam 1a which is subjected to a deflection process based on exposure data D includes an electron source 1, a mask selection deflection drive circuit. 2a, a rectangular shaping aperture 2b, first and second deflectors 2c and 2d, a drawing deflection driving circuit 2e, a stencil mask 3, a mask moving circuit 4, an exposure control computer 5, and a stage driving circuit 6.

The stencil mask 3 has a plurality of block patterns 3a to 3d as shown in the broken line circle in FIG.
, And patterns such as LSI wiring and contact holes are formed.

The function of the exposure apparatus is that the electron beam emitted from the electron generation source 1 is shaped into a rectangular shaping aperture 2b.
Is shaped into a rectangular electron beam 1a, and the rectangular electron beam 1a is deflected to the stencil mask 3. In this deflection processing, the stencil mask 3 is moved to a position where the block pattern 3a can be selected according to the output value of the mask moving circuit 4 based on the exposure data D composed of variable figure exposure data, and the mask selecting deflection drive circuit 2a. Is performed by supplying a deflection current or voltage to the first deflector 2c according to the output value of

The shaped electron beam 1a passing through the block pattern 3a is deflected and scanned on the semiconductor wafer 7 by the second deflector 2d. This allows the wafer 7 to be exposed with an LSI wiring pattern or the like in the shape of the block pattern 3a.

After that, the stage is moved by the stage drive circuit 6 in order to change the exposed region of the semiconductor wafer 7.

[0015]

By the way, based on the exposure data D created by the conventional exposure processing system, for example, the LSI design processing system A as shown in FIG.
The exposure processing system B as shown in FIG.
According to the system for exposing the I pattern, in the LSI design processing system A, the patterns of the LSI wiring, the contact holes, etc., and the repetitive patterns of the cell parts, etc. are uniformly applied to the variable figure exposure based on the design basic figure data DD. The exposure data D consisting of only data is being processed.

Therefore, the following problems occur. In the LSI design processing system A, high integration of semiconductor integrated circuits,
As the data handling amount increases with the increase in density, there is a first problem that it takes a lot of processing time to create variable figure exposure data.

For example, in the processing flow chart of the LSI design processing system A as shown in FIG. 17, in step P1, the design basic figure data DD relating to the LSI to be newly developed is input, and in step P2 the LSI automatic design is performed. To process. In the design process at this time, the design basic figure data DD required by the designer is read out from the design data file, and the pattern of the wiring of the semiconductor integrated circuit, the contact hole or the like and the repeating pattern of the cell part or the like are combined on the display. To be done.

Then, in step P3, the exposure data D is created. In the creation processing at this time, the LSI pattern subjected to the combination processing based on the design basic graphic data DD is divided into rectangular patterns and the like, and the data is converted into the exposure data D consisting of only the variable graphic exposure data.

As a result, when the data handling amount increases with the high integration and high density of the semiconductor integrated circuit, it takes a lot of processing time to create the variable figure exposure data. Further, in the exposure processing system B, a pattern to be subjected to block exposure is extracted as block pattern selection data from the variable figure exposure data included in the exposure data D created in the processing system A, and the block pattern selection data and the exposure processing concerned are extracted. The collation processing with the block exposure data of the system B is performed.

For this reason, in the exposure processing system B, if the amount of data handled increases with the high integration and high density of the semiconductor integrated circuit, the matching process becomes more complicated, and a lot of time is required for the block pattern selection process. There is a second problem.

That is, an exposure processing system B as shown in FIG.
In the process flow chart of No. 3, the exposure data D is input in step P1, and then the data comparison and collation process is performed in step P2. In the comparison and collation processing at this time, based on the variable figure exposure data included in the exposure data D, a pattern that matches the block exposure data of the exposure processing system B is found. For example, in the exposure processing system B, the shape data of the block patterns of about 50 to 100 formed on the stencil mask 3 and the selection data thereof are compared on the memory area.

Further, regarding the block pattern selection data found to perform the block exposure, the selection data applied to the mask moving circuit for selecting the block pattern and the mask selection deflection drive circuit 2a are applied. Deflection data is added. After this, the exposure process is actually performed.

In this exposure process, first, in step P3, a block pattern is selected. At this time, one block pattern of the stencil mask 3, for example, a rectangular block pattern 3a is selected via the first deflector 2c which operates by receiving the outputs of the mask moving circuit 4 and the mask selecting deflection driving circuit 2a. It As a result, the block pattern closest to the basic figure pattern required by the LSI design processing system A is selected, and thereafter, in step P4, the rectangular electron beam 1a is irradiated and pattern exposure processing is performed.

As a result, in the exposure processing system B, as the data handling amount increases due to higher integration and higher density of semiconductor integrated circuits, the matching processing becomes more complicated, and a lot of time is required for the block pattern selection processing. It will be.

As a result, according to the exposure processing system of the conventional example, the speeding up of the data processing of the LSI design processing system is hindered, and the throughput of the exposure apparatus is lowered.
The present invention was created in view of the problems of the conventional example, and does not uniformly convert the design data of the LSI into only the variable figure exposure data, and the data collation of the exposure processing system when the block pattern is selected. It becomes possible to carry out block exposure processing between the exposure processing system and the LSI design processing system without performing any processing, having intermediary data regarding the block pattern, and efficiently and at high speed based on the intermediary data. An object is to provide an exposure processing system device, a charged particle beam exposure device, and a charged particle beam exposure method.

[0026]

1 to 3 are principle views (Nos. 1 to 3) of an exposure system apparatus according to the present invention, and FIG. 4 is a principle view of a charged particle beam exposure apparatus according to the present invention. FIG. 5 shows the principle of the charged particle beam exposure method according to the present invention.

The exposure processing system apparatus of the present invention is shown in FIGS.
As shown in FIG. 3, the design data (D
LSI design processing system (100) for creating exposure data (PD) based on D) and a plurality of block patterns (B1,
Beam shaping means (13) having B2 ... Bn),
An object to be exposed (17) based on the exposure data (PD)
And a charged particle beam exposure processing system (101) for exposing the charged particle beam (11a) to each other, wherein the LSI design processing system (100) includes a block pattern (B1, B2 ... Bn) of the beam shaping means (13). ) Dictionary exposure pattern (R
P), and creates exposure data (PD) including block exposure data (RPD) instructing exposure using the block patterns (B1, B2 ... Bn) of the beam shaping means (13). And

In the above exposure processing system apparatus, the exposure data PD includes, in addition to the block exposure data RPD, variable pattern exposure data for continuously deflecting the charged particle beam 11a to form a pattern. (VD = D
x1, Dy1, Dx2, Dy2 ...) may be included.

[0029]

[0030]

Further, in the charged particle beam exposure method, as shown in the flowchart of FIG.
In 3b, charged particles based on the variable figure exposure data (VD = Dx1, Dy1, Dx2, Dy2 ...) And the beam deflection data (BD = BD1, BD2 ... BDi, BDn) included in the exposure data (PD). To be exposed (1
It is characterized in that the exposure process of 7) is performed.

[0032]

[0033]

[0034]

[0035]

[0036]

According to the exposure processing system of the present invention, for example, as shown in FIGS. 1 to 3, it is necessary for the block exposure processing based on the design basic figure data (hereinafter simply referred to as design data) DD of the newly developed LSI. Exposure data PD is LSI
Automatically created by the design processing system 100. At this time, L
In the SI design processing system 100, as shown in FIG. 2, the beam shaping means 13 provided in the charged particle beam exposure processing system 101.
.. Bn are combined, and the LSI design process is performed based on the combination process.

That is, the LSI design processing system 100, as shown in FIG. 2, uses a plurality of block patterns B1, B2 ... Bn of the beam shaping means 13 provided in the charged particle beam exposure processing system 101 in advance as a dictionary exposure pattern. (Mediation data) R
The LSI design pattern PP is set to P.

Block exposure data transferred to the charged particle beam processing system 101 RPD = RPD1, RPD2, ... RPDi, RPD
n is related to the dictionary exposure pattern RP formed of a repeating pattern such as a basic repeating shape of a cell portion of DRAM (Dynamic Random Access Memory) and a pattern shape of a cell peripheral portion. This is the exposure processing system 10
It is medium data relating to the shapes of a plurality of block patterns B1, B2 ... Bn from 1 to the LSI design processing system 100.

Further, the block exposure data RPD is stored in the storage means of the LSI design processing system 100, and the stored block exposure data RPD = RPD1, RPD2 ... RPDi,
RPDn is processed in combination. At the time of this combination processing, in the LSI design processing system 100, for the block exposure data RPD = RPD1, RPD2 ... RPDi, RPDn used for the LSI design pattern PP desired by the designer,
A plurality of block patterns B1, B2, ... B are used as intermediary data from the LSI design processing system 100 to the exposure processing system 101.
Selection data AD = AD for reading out the shape of n
1, AD2, ... ADi, ADn are added to the exposure data PD. That is, the exposure data PD includes the exposure data RPD instructing the exposure using the block patterns B1, B2 ... Bn included in the exposure processing system.

As a result, in the LSI design processing system 100,
The exposure data PD of the exposure target 17 is automatically created based on the process of combining the intermediary data = the dictionary exposure pattern RP.

Therefore, in the exposure processing system apparatus of the present invention, a plurality of block patterns B1, B2 ... Bn are formed.
By designing a new LSI based on the above, it becomes possible to automatically create the exposure data PD including the block exposure data RPD.

Therefore, in the exposure processing system 101, beam deflection data BD = BD1, BD2 ... BDi, BDn for selecting a plurality of block patterns B1, B2 ... Bn are read out as intermediary data AD = AD1, AD2 ... ADi, ADn. Based on the above, variable figure exposure data VD = Dx1, Dy1, Dx2, Dy2
It becomes possible to perform exposure processing based on.

As a result, the LSI to be designed is highly integrated,
Even if the density is increased, the block pattern selection process is performed in a short time, so that the exposure process can be speeded up. It is also possible to improve the throughput of the exposure apparatus.

[0044]

[0045]

[0046]

[0047]

[0048]

[0049]

[0050]

[0051]

[0052]

[0053]

For example, the charged particle beam 11a is emitted by the charged particle generating means 11, and the charged particle beam 11a is deflected by the first deflecting means 12. In the deflection process at this time, the control means 16 reads out the beam deflection data BD = BD1, BD2 ... BDi, BDn based on the selection data AD = AD1, AD2 ... ADi, ADn included in the exposure data PD, and sets the value as the first value. 1 to the deflection means 12.

Further, one block pattern B of the beam shaping means 13 consisting of a plurality of block patterns B1, B2 ... Bn based on the value output to the first deflecting means 12.
The charged particle beam 11a is selectively deflected to i (hereinafter referred to as mask deflection processing). As a result, one block pattern Bi is selected, and the charged particle beam 11a passes through it, so that the beam 11a is shaped. Then, the shaped charged particle beam 11a is image-deflected by the second deflecting means 15 on the exposure target 17.

Therefore, unlike the conventional example, the process for finding the optimum block pattern, that is, the collation process between the variable figure exposure data included in the exposure data PD and the block exposure data of the exposure apparatus is not required.

In addition, a plurality of block patterns B1 and B2
The selection of one block pattern Bi from Bn can be performed only by the access operation to the storage means 14. Therefore, the block pattern selection process can be executed at high speed.

As a result, even if the design LSI is highly integrated and has a high density, the block pattern selecting process can be performed in a short time. This makes it possible to improve the throughput of the exposure apparatus.

[0059]

Therefore, with respect to the block pattern created in advance in the design processing system 100 using the dictionary exposure pattern RP, about 50 to 100 block patterns B1 formed on the stencil mask of the exposure processing system 101, etc.
Based on B2 ... Bn and for the variable rectangular pattern, the variable figure exposure data VD = Dx1,
Pattern exposure processing can be efficiently performed based on Dy1, Dx2, Dy2, ....

As a result, even if the design LSI is highly integrated and has a high density, the block pattern Bi is selected by the block pattern B1 formed on the stencil mask.
Since the processing is performed within the range of B2 ... Bn and the selection processing of the block pattern is performed in a short time, it is possible to speed up the exposure processing.

[0062]

Embodiments of the present invention will now be described with reference to the drawings. 6 to 15 are views for explaining an exposure processing system apparatus, a charged particle beam exposure apparatus, and a charged particle beam exposure method according to the embodiment of the present invention.

(1) Description of First Embodiment FIG. 6 shows a block diagram of an LSI design processing system of an exposure processing system apparatus according to a first embodiment of the present invention.

In FIG. 6, the LSI design processing system is an embodiment of the LSI design processing system 100, and includes a keyboard 8, a display 9, a design data file memory 1
0, data temporary file memory 18A, exposure data file memory 18B, figure division processing editor 19, other processing editor 20, automatic data creation control device 28 and system bus 29.

That is, the keyboard 8 inputs these control data and the like when the LSI design pattern PP is divided and the block patterns thereof are extracted. The display 9 displays a design pattern PP or the like based on the design basic graphic data (design data) DD.

The design data file memory 10 is an LSI
The design basic figure data DD relating to the design pattern PP is stored. The data temporary file memory 18A is
Data such as the size of the block patterns B1, B2 ... Bn, the reduction ratio thereof, and the number of pattern shots is temporarily stored.

The exposure data file memory 18B stores the block exposure data RPD, the exposure data PD such as the selection data AD and the variable figure exposure data VD, which are related to the extraction processing of the block patterns B1, B2 ... Bn.
The selection data AD is the charged particle beam exposure processing system 1
This is the data for reading the beam deflection data BD of the electron beam exposure apparatus, which is an example of 01.

The figure division processing editor 19 is an auxiliary device for dividing an LSI pattern included in the design pattern PP and its wiring pattern. The other processing editor 20 is an auxiliary device that extracts data such as a repeating pattern and a non-repeating pattern of the memory cells included in the design pattern PP.

The automatic data creation controller 28 includes a keyboard 8, a display 9, memories 10, 18A, 18B, and process editors 1 connected via a system bus 29.
The input / output of 9 and 20 is controlled. For example, the automatic data creation control device 28 uses the LSI design pattern PP
A plurality of block patterns B1, B2 ... Bn extracted from
Exposure data P including block exposure data RPD based on
This is a process for automatically creating D.

FIG. 7 is a block diagram of the electron beam exposure apparatus of the exposure processing system apparatus according to the first embodiment of the present invention. In FIG. 7, an electron beam exposure apparatus is an example of a charged particle beam exposure system 101. For example, an electron beam exposure apparatus using an electron beam 21a which is an example of a charged particle beam 11a is a rectangular electron beam generation system 21. , The first and second deflection systems 22A and 22B, the stencil mask 23,
It comprises a RAM (writable / readable memory) 54, an exposure control system 25, a stage drive system 26, and the like.

That is, reference numeral 21 denotes a rectangular electron beam generating system which is an embodiment of the charged particle generating means 11, and the electron gun 21
A, grid electrode 21B, anode electrode 21C, rectangular shaping aperture 21D, alignment coil 21F and the like.
The function of the rectangular electron beam generation system 21 is to accelerate the electron beam 21a generated by the electron gun 21A via the grid electrode 21B and the anode electrode 21C, and shape the electron beam 21a into a rectangular shape by the rectangular shaping aperture 21D. It is a thing.

Reference numeral 22A denotes the first deflecting means 12 which constitutes the first deflecting means 12.
Of the first electron lens 21E, the slit deflector 221, and the second electron lens.
222, first to fourth alignment deflectors 230 to 233, an electronic lens 223 and the like.

The function of the first deflection system 22A is that the electron beam 21
a is converted into a rectangular electron beam 21a having an appropriate irradiation area by the first electron lens 21E, and the pattern control controller 52
Rectangular electron beam based on the pattern data DP from
21a is aligned with one block pattern B1i on the stencil mask 23, and the shaped electron beam
It is for returning 21a to the optical axis.

Reference numeral 23 denotes a stencil mask which is an embodiment of the beam shaping means 13 and comprises a plurality of block patterns B11 to B1n which allow the rectangular electron beam 21a to pass therethrough.
The stencil mask will be described in detail with reference to FIGS.

Reference numeral 22B is a second part of the second deflecting means 15.
Of the blanking deflector 22
6, an aperture 227, a main differential coil 228, a sub deflector 229, and the like. The function of the second deflection system 22B is
The shaping electron beam 21a that has passed the arbitrary block pattern B1i selected by the stencil mask 23 is subjected to blanking deflection processing, or is deflected onto the exposure target 17.

As a result, the semiconductor wafer 27, which is an example of the exposure target 17, can be exposed based on the shaped electron beam 21a that has passed through the block pattern B1i. For example, the semiconductor wafer 27 can be exposed to a repetitive pattern such as an LSI pattern or a wiring pattern.

An exposure control system 25 is an embodiment of the control means 16, which includes a data memory 51, a pattern controller 52, first to fourth digital / analog conversion amplifier circuits (hereinafter referred to as DAC / AMP) 53, 57, 510, 511, R
AM 54, mask moving circuit 55, blanking control circuit 56, sequence controller 58, deflection control circuit 5
9, interface circuit 512, exposure data storage device 51
3 and a central processing unit (hereinafter referred to as CPU) 514 and the like.

Here, what is different from the conventional example is the portion in which the RAM 54 is provided in the embodiment of the present invention. That is,
The RAM 54 is an embodiment of the storage means 14 and stores beam deflection data BD = BD1, BD2 ... BDi, BDn for selecting a plurality of block patterns B11, B12 ... B1n.

This is about 50 to 100 block patterns B11, B12 ... B formed on the stencil mask 23.
1n arrangement information is stored, and according to the embodiment of the present invention, a plurality of block patterns B11, B12 ... With selection data AD = AD1, AD2 ... ADi, ADn etc. as addresses.
The beam deflection data BDi that selects one block pattern B1i from B1n can be read out (see FIG. 8).

That is, in the operation of the exposure control system 25, first, the exposure data PD from the exposure data storage device 513 is C
It is inputted to the data memory 51 and the sequence controller 58 via the PU 514 and the interface circuit 512. Further, the beam deflection data BD is previously stored in the RAM 54 via the pattern controller 52 via the same route.
Is input to

The beam deflection data BD is, specifically, data to be output to the mask moving circuit 55 and the stencil mask 2 in order to move the stencil mask 23.
3 is data output to the first to fourth alignment deflectors 230 to 233 for selecting the block pattern B1i formed on the third pattern.

These data are output at the same time when the selection data AD accesses the RAM 54 as an address. That is, when the selection data AD is read from the data memory 51 as the pattern data to be exposed, one block pattern B1i can be selected from the block patterns B11 to B1n.

The exposure data PD includes, in addition to the selection data AD, sub-deflection data SDD for deflecting the sub-deflector 229, main-deflection data MDD for deflecting the main-deflection coil 228, and a blanking control circuit. 56
It also includes data that controls

As a result, the beam deflection data BDi read from the RAM 54 becomes the pattern data DP and DAC /
It is input to the AMP 53 and the mask moving circuit 55. further,
The slit deflector 221 and the stencil mask 23 of the first deflection system 22A are drive-controlled. Further, based on the pattern data DP, the blanking control circuit 56 and DAC / AM
With P 57, the first to fourth alignment deflectors 230 to 23
3, the blanking deflector 226 and the like are driven and controlled, and the electron beam 21a can be irradiated to an arbitrary position on the exposure target 27.

On the other hand, the deflection data DD from the sequence controller 58 is the deflection control circuit 59 and the stage drive system 2.
6 is input. Further, the sub differential data SDD and the main differential data MDD from the deflection control circuit 59 are DAC / AMP 510, 51.
1, which drives and controls the main diff coil 228, the sub deflector 229, and the like of the second deflection system.

Reference numeral 26 denotes a stage drive system, which is composed of a stage moving mechanism 26A, a stage 26B, a laser interferometer, and the like. The function of the stage drive system 26 is to control the drive of the stage 26B on which the semiconductor wafer 27 is placed and the measurement of its moving position based on the stage drive data SD from the sequence controller 58 (see FIG. 11).

FIGS. 8A and 8B are views for explaining the contents of the memory table of the RAM according to the embodiment of the present invention.
In FIG. 8A, Rmt is the content of the memory table of the RAM 54, and includes a plurality of block patterns B11, B12 ... B.
Beam deflection data BD = BD1, BD2 ... BD for deflecting the electron beam 21a to one block pattern B1i of 1n
The contents of i and BDn are shown.

That is, in FIG. 8A, ADDx =
ADDD1, ADD2 ... ADDi, ADDDn indicate block pattern selection addresses associated with the block patterns B11, B12 ... B1n. Further, each beam deflection data BD is output data BD11 corresponding to the first to fourth alignment deflection amounts,
BD12 ... and stencil mask position data MX11, MX12 ...
Etc. consists of a plurality of data.

For example, output data BD11 = [Sx11, Sy11], BD12 = [Sx12, Sy12] for the address ADD1.
], Similarly, BD21 = [Sx21, Sy21 for ADD2
], BD22 = [Sx22, Sy22] ... Further, BDn = [Sxn1, Syn1], BDn = [Sxn2, Syn2] with respect to ADDn.
Is ...

The selection data AD = AD1, AD2 ... AD
When the address ADD is specified in the RAM 54 based on i and ADn, the X and Y deflection drive signal S is output as the pattern data DP.
x1 to Sxn and Sy1 to Syn are first to fourth alignment deflectors
It is output to 230 to 233. Thereby, the electron beam 21a can be aligned with one block pattern.

Further, B11, B12 ... B shown in FIG.
1n is a schematic view of a plurality of block patterns, showing the block patterns provided on the stencil mask 23. FIG. 9 is a diagram for explaining a stencil mask according to an embodiment of the present invention, which shows an overall plan view of one stencil mask and an enlarged view of one area therein.

In FIG. 9, E1 to E9 are beam irradiation areas, which are arranged in a matrix at a predetermined pitch EL. According to an embodiment of the present invention, 3 × 3 9
An area is provided, and the size of one area is about 1 to 5 mm □ corresponding to the maximum deflection range of the electron beam 21a. Further, Exy is a position coordinate serving as a reference point of each area, and the reference point of the area E7 is shown as Exy (1,2).

Normally, this area is selected by mechanically moving the mask stage by the output of the mask moving circuit 55. Further, B1 to B36 are block pattern forming regions, and the block forming regions are arranged in a matrix at a predetermined pitch BL. According to the embodiment of the present invention, there are provided 6 × 6 36 block forming regions, and one size is about 100 to 500 μm □ which is approximately equal to the cross-sectional shape of the rectangular electron beam 21a. The block pattern B is formed in this region.

Normally, this block is selected from the first to the fourth.
Of the alignment deflectors 230-233. Further, Bxy is a position coordinate serving as a reference point of each block area, and the reference point of the area B32 is shown as Bxy (1,2). FIG. 10 is a diagram for explaining a block pattern group according to the first embodiment of the present invention, which shows an overall plane position of one block area and an enlarged view of one block pattern in it. ing.

In FIG. 10, B10, B11, B16 and B17 are block patterns, and a plurality of block patterns B11, B12 ... B1n of the stencil mask 23, for example, the block pattern B10 is a pattern in which four linear patterns are arranged in parallel. That is, the wiring pattern of the LSI is formed. The block pattern B11 is a stepwise pattern and is used as a region selection pattern of the parallel straight line pattern group.

Further, the block pattern B16 is a quadrilateral pattern and is used as a region selection pattern such as the parallel straight line pattern group in the same manner as the block pattern B11. The block pattern B17 is a specific block pattern in which a contact hole and a linear pattern are combined.

11A and 11B are views for explaining the stage drive system according to the embodiment of the present invention.
[FIG. 3] is an explanatory diagram of a continuous stage moving system for continuously exposing the semiconductor wafer 27. For example, when exposing a stripe common to each chip of the semiconductor wafer 27, the linear block pattern B10 is selected and the stage moving mechanism 26A is continuously moved.

For example, as shown in FIG. 11B, the semiconductor wafer 27 placed on the stage 266 is moved in the X direction by the DC motor 262 for the X axis. Similarly, it is moved in the Y direction by the DC motor 265 for the Y axis.

When the exposure of the block pattern B10 is completed and the next block pattern B1i is selected,
Select data AD of exposure data PD = AD1, AD2 ... ADi,
The stage movement amount from the laser interferometer 26C is fed back to match the access timing to the RAM 54 related to ADn and the movement position of the stage movement mechanism 26A.

FIG. 11B shows an explanatory view for measuring the stage moving direction, the moving speed, the moving amount, etc. of the semiconductor wafer 27 moving the stage by the laser interferometer 26C.

In FIG. 11B, when the stage 266 is moved in the X direction, the moving direction, moving speed, and moving amount are measured by the laser length measuring device 264 for the X axis via the stage control unit 261. Are measured, and the result is fed back to the deflection control circuit 59. Similarly, when it is moved in the Y direction, its moving direction, moving speed, moving amount, etc. are measured by the Y-axis laser length measuring device 264 via the stage control unit 261 and the result is Deflection control circuit 59
Be fed back to.

As a result, it becomes possible to transfer the block exposure pattern to the continuously moving exposed area. In this way, according to the exposure processing system apparatus of the first embodiment of the present invention, as shown in FIGS.
An SI design processing system and an electron beam exposure apparatus are provided, and the LSI design processing system automatically creates exposure data PD including block exposure data RPD as shown in FIG. , 10, a stencil mask 23 is provided.

For example, the exposure data PD necessary for the block exposure processing is automatically created by the LSI design processing system based on the LSI design data DD. At this time, L
In the SI design processing system, as shown in FIG. 6, exposure data PD including block exposure data RPD is automatically created based on a plurality of block patterns B1, B2, ... It

Further, the exposure data PD automatically created here includes variable figure exposure data VD = Dx1, Dy1, Dx2, Dy2 ... In addition to the block exposure data RPD, and the block exposure data RPD is further included. Is beam deflection data BD = BD1, BD2 ... BDi, BDn for selecting one of a plurality of block patterns B1, B2 ... Bn of the stencil mask 23 provided in the electron beam exposure apparatus. AD1, AD2 ... ADn are included.

As a result, the semiconductor wafer 27 is subjected to the block pattern exposure process in the electron beam exposure apparatus based on the exposure data PD. At this time, a plurality of block patterns B1 extracted from the LSI design pattern PP,
Block pattern exposure processing is performed based on the stencil mask 23 in which B2 ... Bn are mask patterns, for example.

That is, in the electron beam exposure apparatus equipped with the rectangular electron beam generation system 21, the first and second deflection systems 22A and 22B, the stencil mask 23, and the RAM 54, a plurality of block patterns B11 based on the exposure data PD. ，
Beam deflection data BD = B for selecting B12 ... B1n
D1, BD2 ... BDi, BDn are pattern control controllers 52
Is read out via.

For example, a rectangular electron beam 21a is emitted from the rectangular electron beam generating system 21 toward the semiconductor wafer 27,
The electron beam 21a selects one block pattern B1i of the stencil mask 23 by the first deflection system 22A.
In the selection processing at this time, the pattern control controller 52 of the exposure processing system 25 generates the beam deflection data BD = BD1, BD2 ... BDi, BDn based on the selection data AD = AD1, AD2 ... ADi, ADn included in the exposure data PD. Readout is performed by deflecting the rectangular electron beam 21a to one block pattern B1i of the stencil mask 23 composed of a plurality of block patterns B11, B12 ... B1n based on the beam deflection data BD = BD1, BD2 ... BDi, BDn. .

As a result, one block pattern B1i
Is selected, and the electron beam 21a passes therethrough, whereby the beam 21a is shaped. Therefore, unlike the conventional example, the process for finding the optimum block pattern, that is, the collation process between the variable figure exposure data included in the exposure data PD and the block exposure data included in the exposure apparatus is not necessary.

In addition, a plurality of block patterns B1 and B2
The selection of one block pattern Bi from Bn is R
It can be performed only by the access operation to the AM 54. Therefore, the block pattern selection process can be executed at high speed.

Further, in the LSI design processing system, the LS
Even when the data handling amount increases with the high integration and high density of I, the block exposure data RPD is created based on the plurality of block patterns B1, B2 ... Bn extracted from the LSI design data DD. After that, variable pattern exposure data may be created only for design patterns other than the block patterns B1, B2 ... Bn.

As a result, the block exposure data RPD and the variable figure exposure data VD as in the embodiment of the present invention are compared with the exposure data PD of the conventional example in which only the variable figure exposure data VD is used as the exposure data PD. It is possible to significantly reduce the creation process.

Further, in the electron beam exposure apparatus, even when the data handling amount increases due to the high integration and high density of the semiconductor integrated circuit, the collating process as in the conventional example is omitted and the block pattern is selected. The operation can be executed in a short time.

As a result, the overall processing time of the first exposure processing system apparatus can be shortened, the block exposure processing can be speeded up as compared with the conventional example, and the throughput of the exposure apparatus can be improved. Can be achieved.

Next, an electron beam exposure method according to the first embodiment of the present invention will be described while supplementing the operation of the apparatus. FIG. 12 shows a flowchart of the electron beam exposure method according to the embodiment of the present invention.

In FIG. 12, when the exposure processing of the repetitive pattern of the memory cell or the like and the non-repeating pattern of its peripheral circuit or the like is performed, first, in step P1, the shaping electron beam 21
The extraction processing of a is performed. That is, in step P1, the irradiation amount, irradiation time, irradiation energy, etc. are set.

Then, in step P2, the exposure data PD is fetched. At this time, in the exposure control system 25, the exposure data PD from the exposure data storage device 513 is C
It is inputted to the data memory 51 and the sequence controller 58 via the PU 514 and the interface circuit 512.

The mask deflection system data for selecting the block pattern is stored in the data memory 51.
Further, drawing deflection system data for drawing the rectangular electron beam 21a is inputted to the sequence controller 58, respectively.

Then, in step P3, the exposure process is started. First, in step P4, the pattern data DP and the selection data AD = AD1, AD2 ... ADn are read out from the exposure data PD. At this time, the selection data AD = AD1, AD2 ... ADi, ADn added to the block exposure data RPD = RPD1, RPD2 ... RPDn from the data memory 51 are input to the RAM 54 via the pattern controller 52.

Further, in step P5, the exposure mode is judged. Here, in the case of the single exposure mode (YES) in which the exposure processing is performed using the block patterns B11, B12 ... B1n formed on the stencil mask 23, the process proceeds to step P6. In addition, a composite exposure mode (N which combines block pattern exposure and exposure processing based on a variable rectangular pattern
In the case of O), the process proceeds to step P8.

Therefore, in the case of the single exposure mode (YES), in step P6, the rectangular electron beam 21a is converted into a plurality of block patterns B11, B12 ... B1n based on the selection data AD.
The beam deflection data BD = BDi for deflecting to one block pattern B1i is read out. As a result, RA
The beam deflection data BDi from M54 is read out and becomes the pattern data DP, which is the DAC / AMP 53,
It is output to the mask moving circuit 55 and the blanking control circuit 56.

Next, in step P7, mask deflection processing of the rectangular electron beam 21a is performed on one block pattern B1i selected based on the reading processing. At this time, the X, Y deflection drive signals Sx1 to Sxn, Sy1 to Syn are output to the first to fourth alignment deflectors 230 to 233, and one block pattern B1i of the plurality of block patterns B11, B12 ... B1n.
The rectangular electron beam 21a can be aligned.

After that, in step P8, the shaping electron beam 21a shaped based on the mask deflection processing is subjected to the drawing deflection processing on the semiconductor wafer 27. At this time, the second deflection system 22
The rectangular electron beam 21a passing through the block patterns B10, B11, B16, B17, etc. selected by the stencil mask 23 by B is subjected to drawing deflection processing.

As a result, the semiconductor wafer 27 can be exposed with the block patterns B10, B11, B16, B17, etc. relating to the repeating pattern of the memory cells and the like. For the LSI pattern not formed on the stencil mask 23, for example, the parallelogram pattern, the case of the composite exposure mode (NO) is selected, and the variable figure exposure data VD = D included in the exposure data PD is selected in Step P9.
x1, Dy1, Dx2, Dy2 ... And beam deflection data BD = B
Rectangular electron beam 21a based on D1, BD2 ... BDi, BDn
Variable rectangle processing of.

At this time, the variable figure exposure data VD = Dx1, Dy1, Dx2, Dy2 from the sequence controller 58.
Deflection data DD based on ... Is input to the deflection control circuit 59 and the stage drive system 26. Further, the sub diff data S DD and the main diff data M DD from the deflection control circuit 59 are DAC /
The signals are input to the AMPs 510 and 511, whereby the main diff coil 228 and the sub deflector 229 of the second deflection system are drive-controlled.

Next, in step P10, drawing deflection processing of the semiconductor wafer 27 is performed based on the rectangular electron beam 21a subjected to the variable rectangular processing. As a result, a non-repeating pattern such as a peripheral circuit such as a memory cell or a parallelogram pattern can be exposed.

Then, in step P11, it is determined whether or not the shot has ended. When the shot is finished (YES), the exposure process is finished. If the shot is not finished, the process returns to step P4 to continue the exposure process.

As described above, according to the exposure method of the first embodiment of the present invention, as shown in FIG.
6, beam deflection data BD = BD of the rectangular electron beam 21a
1, BD2 ... BDi, BDn are read out, and the beam deflection data BD = BD by the reading process in step P7.
1, BD2 ... BDi, BDn or or in step P8, the variable figure exposure data VD = Dx1, which is included in the exposure data PD.
The deflection processing of the rectangular electron beam 21a is performed based on Dy1, Dx2, Dy2 ... And the exposure processing of the semiconductor wafer 27 is performed based on the shaped rectangular electron beam 21a in step P8.

Therefore, with respect to the block pattern used as the dictionary exposure pattern RP in the LSI design processing system in advance, about 50 to 100 block patterns B11, B12 ... B1n formed on the stencil mask 23 of the exposure apparatus.
Based on the variable figure exposure data VD = Dx1, Dy1, Dx2, Dy2 ... For the variable rectangular pattern not formed on the stencil mask 23. It becomes possible to do.

As a result, even if the design LSI is highly integrated and has a high density, the block pattern B1i is selected by the block pattern B formed on the stencil mask 23.
Since it is limited to 11, B12 ... B1n, and the selection processing of the block pattern is performed in a short time, the exposure processing can be speeded up.

(2) Description of Second Embodiment FIGS. 13 to 15 are explanatory views of an exposure processing system apparatus according to a second embodiment of the present invention, and FIG. 13 is a second embodiment of the present invention. The block diagram of the LSI design processing system of the exposure processing system apparatus which concerns on an example is shown.

In FIG. 13, the difference from the first embodiment is that in the second embodiment, the LSI design processing system uses a plurality of block patterns B1, B2 ... Bn of the stencil mask 23 provided in the electron beam exposure apparatus. The dictionary exposure pattern RP is used, the combination process is performed, and the LSI design process is performed based on the combination process.

That is, the second LSI design processing system is another embodiment of the LSI design processing system 100, and includes a keyboard 40, a display 41, a design data file memory 42, a data temporary file memory 43, and an exposure data file memory 44. , A graphic layout processing editor 45, a hierarchical expansion processing editor 46, an automatic data creation control device 47 and a system bus 48.

The keyboard 40 is used to input an LSI pattern desired by the designer, layout processing control data thereof, and the like. The display 41 is an LSI under design
A layout pattern such as a pattern is displayed.

The design data file memory 42 includes a plurality of block patterns B11, which are provided in the electron beam exposure apparatus.
B12 ... B1n block exposure data RPD = RPD1, R
PD2 ... RPDi, RPDn are stored. The memory area will be described in detail with reference to FIG.

The temporary data file memory 43 temporarily stores data such as the size of the block patterns B1, B2 ... Bn, the reduction ratio thereof, and the number of pattern shots. The exposure data file memory 44 stores the exposure data PD obtained by combining the block patterns B1, B2 ... Bn.

The graphic layout processing editor 46 is an auxiliary device for layout processing of LSI patterns and their wiring patterns. The hierarchical expansion processing editor 47 is an auxiliary device that hierarchically expands data such as repetitive patterns and non-repetitive patterns of memory cells and the like.

The automatic data creation control device 45 includes a keyboard 40, a display 41, memories 42 to 44, process editors 46, which are connected via a system bus 48.
It controls the input / output of 47.

FIG. 14 shows the contents of the memory table of the design data file memory according to the embodiment of the present invention. Figure
In FIG. 14, MT is the contents of the memory table, and indicates a part of the memory area of the design data file memory 42. B11, B12 ... B1n are schematic views of a plurality of block patterns, for example, showing a block pattern (mask pattern) provided on a stencil mask 23 of an electron beam exposure apparatus which is an example of a charged particle beam exposure apparatus. .

RPD = RPD1, RPD2 ... RPDi, RPDn
Indicates block exposure data (block pattern shape data) relating to the block patterns B11, B12 ... B1n. AD = AD1, AD2 ... ADi, ADn are selection data, and each block exposure data RPD1, RPD2 ... R
It is an address associated with PDi and RPDn.

Next, an automatic LSI design method for an exposure processing system apparatus according to the second embodiment of the present invention will be described. FIG. 15 shows a flowchart of an LSI automatic design method for an exposure processing system apparatus according to the second embodiment of the present invention.

In FIG. 15, when a plurality of block patterns B11, B12 ... B1n provided in the electron beam exposure apparatus are used as the dictionary exposure pattern RP to create the exposure data PD of the object to be exposed 17, first, in step P1, Block exposure data RPD = RPD1, RPD2 ... RPDi, RPDn related to the block patterns B11, B12 ... B1n are stored in the LSI automatic design processing system.

Regarding the plurality of block patterns B11, B12 ... B1n provided in the electron beam exposure apparatus at this time,
By using a frequently used basic figure pattern such as a repeating pattern such as a memory cell or a wiring pattern as a block pattern, the function as the dictionary exposure pattern RP can be sufficiently exhibited.

It is advantageous to divide the parallelogram pattern or the like into a triangular pattern and a quadrilateral pattern, and perform exposure by combining rectangular and triangular block patterns as in the conventional case. This is because it is necessary to provide many types of block patterns in the beam deflection performance and a limited formation area on the stencil mask 23.

Here, the dictionary exposure pattern RP is stored in the design data file 42 or the like of the automatic design processing system. Next, the combination processing of the block exposure data RPD = RPD1, RPD2 ... RPDi, RPDn stored in step P2 is performed. In the combination processing at this time, for example, when the designer inputs a desired LSI pattern and its layout processing control data with the keyboard 40, the graphic layout processing editor 46 layouts the LSI pattern and its wiring pattern.

Further, the hierarchical expansion processing editor 47 hierarchically expands data such as a repeating pattern or a non-repeating pattern such as a memory cell. These are executed by the automatic data creation control device 45 controlling the input / output of the memories 42, 43, 44 and the process editors 46, 47 connected via the system bus 48.

Further, from the design data file memory 42, block exposure data RPD = R relating to a plurality of block patterns B11, B12 ... B1n provided in the electron beam exposure apparatus.
PD1, RPD2 ... RPDi, RPDn are read. In addition,
The data temporary file memory 43 temporarily stores data such as the size of the block patterns B11, B12 ... B1n, the reduction rate thereof, and the number of pattern shots, and the display 4
At 1, a layout pattern such as an LSI pattern being designed is displayed.

In step P3, the exposure data PD of the exposure target 17 is created based on the combination process. As shown in FIG. 13, the creating process at this time is performed by a plurality of block patterns B11, B12
… Selection data when selecting B1n AD = AD1, AD2 ... A
The exposure data PD to which Di and ADn are added and the variable pattern exposure data VD = D related to the LSI pattern that cannot be combined with the dictionary exposure pattern of the previous step P3.
x1, Dy1, Dx2, Dy2 ... Are combined.

The exposure data PD thus obtained is stored in the exposure data file memory 44. The electron beam exposure apparatus according to the first embodiment is used as the exposure processing system of the exposure processing system apparatus according to the second embodiment, and thus the description thereof is omitted.

As described above, according to the exposure processing system apparatus according to the second embodiment of the present invention, as shown in FIG. 13, the LSI design processing system includes a plurality of stencil masks 23 provided in the electron beam exposure apparatus. Block pattern B
A combination process of 1, B2 ... Bn is performed, and an LSI design process is performed based on the combination process.

For example, the LSI design processing system is shown in FIG.
As shown in FIG. 11, a plurality of block patterns B1 of the stencil mask 23 provided in the electron beam exposure apparatus in advance,
B2 ... Bn are used as a dictionary exposure pattern (mediating data) RP to divide the LSI design pattern PP.

Thus, in the LSI design processing system, the exposure data PD can be automatically created based on the intermediary data = the dictionary exposure pattern RP. That is, the block pattern shape data for which the block exposure data RPD = RPD1, RPD2 ... RPDi, RPDn to be transferred to the electron beam exposure apparatus is, for example, a basic repeating shape of a cell portion of a DRAM (dynamic random access memory) or a cell peripheral portion. The present invention relates to a dictionary exposure pattern RP composed of repetitive patterns such as a pattern shape. This is mediation data relating to the shapes of the plurality of block patterns B1, B2 ... Bn from the electron beam exposure processing system to the LSI design processing system.

The data is also stored in the design data file memory 42 of the LSI design processing system, and the stored block exposure data RPD = RPD1, RPD.
2 ... RPDi and RPDn are combined and processed. At the time of this combination processing, in the LSI design processing system,
Block exposure data RPD = RPD1, RPD2 ... RPDi, used in the LSI design pattern PP desired by the designer
Selection data AD = AD1, AD2 ... ADi, ADn for reading out the shapes of a plurality of block patterns B1, B2 ... Bn is used as mediation data from the LSI design processing system to the exposure processing system 101 for RPDn. Exposure data PD
Is added to.

As a result, in the LSI design processing system, the exposure data PD of the exposure target 17 is automatically created based on the combination processing of the intermediary data = the dictionary exposure pattern RP.

Therefore, as compared with the case where the mask pattern formed on the stencil mask 23 is not determined as in the first exposure processing system apparatus, in the second exposure processing system apparatus, the stencil mask 23 is formed. Already a mask pattern (plural block patterns B1, B2 ... Bn)
Is formed, the plurality of block patterns B
By extracting a plurality of block patterns B1, B2 ... Bn from the LSI design data DD with reference to 1, B2 ... Bn, it becomes possible to automatically create the exposure data PD including the block exposure data RPD.

Therefore, in the electron beam exposure apparatus,
Similar to the first exposure processing system apparatus, beam deflection data BD = BD1, BD2 ... BDi, BDn for selecting a plurality of block patterns B1, B2 ... Bn, intermediate data for read-out processing = selection data AD = AD1, AD2 ... Based on ADi and ADn, variable figure exposure data VD = Dx1, Dy1,
It is possible to perform the exposure process based on Dx2, Dy2 ....

As a result, similarly to the first exposure processing system apparatus, even when the design LSI is highly integrated and has a high density, the block pattern selection processing is performed in a short time, so that the exposure processing can be performed at high speed. Can be realized.
It is also possible to improve the throughput of the exposure apparatus.

Although the electron beam exposure apparatus has been described as an example of the charged particle beam exposure apparatus according to the first and second embodiments of the present invention, it is also applicable to an exposure apparatus using an ion beam. It is possible.

[0158]

As described above, according to the first exposure processing system apparatus of the present invention, the LSI design processing system and the charged particle beam exposure processing system are provided, and the LSI design processing system outputs the block exposure data. The charged particle beam exposure processing system is provided with a beam shaping means based on a plurality of block patterns extracted from LSI design data.

For this reason, in the LSI design processing system, even if the data handling amount increases with the high integration and high density of the LSI, after the process of creating the block exposure data of the LSI, other than the block pattern is processed. Variable pattern exposure data may be created for the design pattern. As a result, the exposure data creation process according to the present invention can be significantly reduced compared to the exposure data creation process of the conventional example.

Further, in the charged particle beam exposure processing system, it is possible to immediately select one of the plurality of block patterns of the beam shaping means based on the selection data included in the block exposure data. Therefore, even if the amount of data handled in the exposure processing system increases due to the high integration and high density of semiconductor integrated circuits, the collation processing is omitted and high-speed exposure processing can be executed. Become.

Further, according to the second exposure processing system apparatus of the present invention, the LS is performed based on the combination processing of a plurality of block patterns provided in the charged particle beam exposure processing system.
I design processing and block exposure data creation processing are performed.

Therefore, when a mask pattern (a plurality of block patterns) is already formed in the beam shaping means of the exposure processing system, a plurality of block patterns can be extracted from the LSI design data by referring to the plurality of block patterns. By extracting, it becomes possible to automatically create exposure data including block exposure data.

Therefore, in the exposure processing system, the block exposure processing can be executed at high speed on the object to be exposed based on the block exposure data and the variable figure exposure data, as in the first exposure processing system apparatus. .

Further, according to the exposure apparatus of the present invention, the electron generation means, the deflection means, the beam shaping means and the storage means are provided, and the beam deflection data reading process for selecting a plurality of block patterns based on the exposure data is performed. A control means for controlling is provided.

Therefore, the electron beam can be deflected to one block pattern of the beam shaping means by reading the beam deflection data based on the selection data included in the exposure data. As a result, the operation of selecting one block pattern from a plurality of block patterns can be executed at high speed.

Further, according to the exposure method of the present invention, the electron beam deflection processing is performed based on the beam deflection data read out on the basis of the selection data or the variable figure exposure data, and the electron beam thus shaped is formed. The semiconductor wafer is subjected to exposure processing based on the above.

Therefore, with respect to the block pattern used as the dictionary exposure pattern in the design processing system in advance, 50 to 100 formed on the stencil mask of the exposure processing system or the like in advance.
It is possible to efficiently perform pattern exposure processing on the basis of variable pattern exposure data as in the conventional example for variable rectangular patterns not formed on a stencil mask or the like based on a block pattern of a certain degree. .

This greatly contributes to the provision of an exposure processing system apparatus which performs high-speed data processing and high-speed block exposure processing.

[Brief description of drawings]

FIG. 1 is a principle diagram (1) of an exposure processing system apparatus according to the present invention.

FIG. 2 is a principle diagram (No. 2) of the exposure processing system apparatus according to the present invention.

FIG. 3 is a principle diagram (No. 3) of the exposure processing system apparatus according to the present invention.

FIG. 4 is a principle diagram of a charged particle beam exposure apparatus according to the present invention.

FIG. 5 is a principle diagram of a charged particle beam exposure method according to the present invention.

FIG. 6 is a configuration diagram of an LSI design processing system of the exposure processing system apparatus according to the first embodiment of the present invention.

FIG. 7 is a configuration diagram of an electron beam exposure apparatus of the exposure processing system apparatus according to the first embodiment of the present invention.

FIG. 8 is a diagram illustrating contents of a memory table of a RAM according to the first embodiment of the present invention.

FIG. 9 is a diagram illustrating a stencil mask according to the first embodiment of the present invention.

FIG. 10 is an explanatory diagram of a block pattern group according to the first embodiment of the present invention.

FIG. 11 is an explanatory diagram of a stage drive system according to the first embodiment of the present invention.

FIG. 12 is a flowchart of an electron beam exposure method according to the first embodiment of the present invention.

FIG. 13 is a configuration diagram of an LSI design processing system of an exposure processing system apparatus according to a second embodiment of the present invention.

FIG. 14 is a diagram illustrating the contents of a design data file memory according to the second embodiment of the present invention.

FIG. 15 is a flowchart of an LSI automatic design method according to a second embodiment of the present invention.

FIG. 16 is a configuration diagram of an electron beam exposure apparatus according to a conventional example.

FIG. 17 is a configuration diagram (No. 1) of the exposure processing system for explaining the problems related to the conventional example.

FIG. 18 is a configuration diagram (No. 2) of the exposure processing system for explaining the problems related to the conventional example.

[Explanation of symbols]

100 ... LSI design processing system, 101 ... Charged particle beam exposure processing system, 11 ... Electron generation means, 12 ... First deflection means, 13 ... Beam shaping means, 14 ... Storage means, 15 ... Second deflection means, 16 ... control means, LSI ... semiconductor integrated circuit, 11a ... electron beam, B1-Bn ... multiple block patterns PD ... exposure data, PP ... design pattern, DD ... design data, RP ... dictionary exposure pattern, RPD ... block exposure data ( Block pattern shape data), BD = BD1, BD2 ... BDi, BDn ... Beam deflection data, AD = AD1, AD2 ... ADn ... Selection data, VD = Dx1, Dy1, Dx2, Dy2 ... Variable figure exposure data.

 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Kenichi Kawashima 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited (72) Inventor Yoshihisa Ohba, 1015, Kamiodanaka, Nakahara-ku, Kawasaki, Kanagawa Prefecture, Fujitsu Limited ( 56) Reference JP-A-2-114513 (JP, A)

Claims (2)

(57) [Claims] 1. An LSI design processing system for creating exposure data based on design data of a semiconductor integrated circuit, and a beam shaping means having a plurality of block patterns, wherein a charged particle beam is applied to an object to be exposed based on the exposure data. And a charged particle beam exposure processing system that exposes the beam shaping means, wherein the LSI design processing system uses the block pattern of the beam shaping means as a dictionary exposure pattern, and instructs to perform exposure using the block pattern of the beam shaping means. And an exposure processing system device for creating exposure data including block exposure data. 2. The exposure data includes variable pattern exposure data for continuously deflecting a charged particle beam to form a pattern, in addition to the block exposure data. The exposure processing system apparatus according to.