JP2514582B2 - Method of manufacturing limiting current type oxygen sensor - Google Patents
Method of manufacturing limiting current type oxygen sensorInfo
- Publication number
- JP2514582B2 JP2514582B2 JP5207094A JP20709493A JP2514582B2 JP 2514582 B2 JP2514582 B2 JP 2514582B2 JP 5207094 A JP5207094 A JP 5207094A JP 20709493 A JP20709493 A JP 20709493A JP 2514582 B2 JP2514582 B2 JP 2514582B2
- Authority
- JP
- Japan
- Prior art keywords
- oxygen sensor
- limiting current
- cathode electrode
- current type
- type oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Measuring Oxygen Concentration In Cells (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、薄膜型の限界電流式酸
素センサの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film limiting current type oxygen sensor.
【０００２】[0002]
【従来の技術】安定化ジルコニア等の酸素物イオン伝導
体を薄膜技術により形成する小型の限界電流式酸素セン
サが提案されている。この種の酸素センサにおいて、触
媒作用を有するカソード電極，アノード電極としては通
常、白金（Ｐｔ）電極が用いられる。Ｐｔ電極は酸素ガ
スを透過するポーラス膜であることが必要である。Ｐｔ
電極をスパッタ法で形成するとポーラスな膜を得ること
が難しく、緻密な膜になってしまう。従って通常、Ｐｔ
電極は印刷法によって形成される。2. Description of the Related Art A small limiting current type oxygen sensor has been proposed in which an oxygen ion conductor such as stabilized zirconia is formed by a thin film technique. In this type of oxygen sensor, a platinum (Pt) electrode is usually used as a cathode electrode and an anode electrode having a catalytic action. The Pt electrode needs to be a porous film that is permeable to oxygen gas. Pt
When the electrodes are formed by the sputtering method, it is difficult to obtain a porous film, and the film becomes dense. Therefore, normally Pt
The electrodes are formed by a printing method.
【０００３】[0003]
【発明が解決しようとする課題】しかし、Ｐｔ電極を印
刷法により形成する場合には、高温の焼成工程が不可欠
である。量産性を考慮した場合には、このような高温焼
成工程を要せず、簡便に且つ所望の限界電流特性を得る
ことのできる限界電流式酸素センサの製造方法が望まれ
る。本発明はこのような点に鑑みなされたもので、簡便
に且つ優れた限界電流特性を得ることを可能とした限界
電流式酸素センサの製造方法を提供することを目的とす
る。However, when the Pt electrode is formed by the printing method, a high temperature firing step is indispensable. In consideration of mass productivity, there is a demand for a method of manufacturing a limiting current type oxygen sensor which does not require such a high temperature firing step and can easily obtain desired limiting current characteristics. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method for manufacturing a limiting current type oxygen sensor that enables easy and excellent limiting current characteristics to be obtained.
【０００４】[0004]
【課題を解決するための手段】本発明による限界電流式
酸素センサの製造方法は、拡散律速性を有する気体透過
性絶縁基板上にスパッタ法により櫛形パターンのカソー
ド電極を形成する工程と、前記カソード電極が形成され
た基板上にスパッタ法又は蒸着法により酸化物イオン伝
導体膜を形成する工程と、前記酸化物イオン伝導体膜上
にスパッタ法により櫛形パターンのアノード電極を形成
する工程とを有することを特徴としている。A method of manufacturing a limiting current type oxygen sensor according to the present invention comprises a step of forming a comb-shaped cathode electrode on a gas-permeable insulating substrate having a diffusion rate-controlling property by a sputtering method, and the cathode. The method has a step of forming an oxide ion conductor film on the substrate on which the electrodes are formed by a sputtering method or a vapor deposition method, and a step of forming a comb-shaped anode electrode on the oxide ion conductor film by a sputtering method. It is characterized by that.
【０００５】[0005]
【作用】本発明によると、カソード電極，アノード電極
共にスパッタ法により形成される。従って印刷法を用い
た場合のようなポーラスなカソード電極，アノード電極
は得られない。しかし本発明では、カソード電極，アノ
ード電極を櫛形パターンとする事により、これらとイオ
ン伝導体膜との有効接触面積が大きいものとなり、充分
に優れた限界電流特性を得ることができる。According to the present invention, both the cathode electrode and the anode electrode are formed by the sputtering method. Therefore, it is not possible to obtain a porous cathode electrode or anode electrode as in the case of using the printing method. However, in the present invention, by forming the cathode electrode and the anode electrode in a comb-shaped pattern, the effective contact area between these and the ion conductor film becomes large, and sufficiently excellent limiting current characteristics can be obtained.
【０００６】[0006]
【実施例】以下、図面を参照して、本発明の実施例を説
明する。図１は本発明の一実施例による限界電流式酸素
センサの平面図とそのＡ−Ａ′断面図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a plan view of a limiting current type oxygen sensor according to an embodiment of the present invention and a sectional view taken along the line AA '.
【０００７】気体透過性絶縁基板としてこの実施例で
は、表面を機械加工したポーラスアルミナ基板１を用い
ている。このアルミナ基板１がこの上に形成されるカソ
ード電極に対して酸素ガスを拡散律速性をもって供給す
る気体拡散層となる。このアルミナ基板１上にまず、ス
パッタ法によりＰｔカソード電極２を形成する。Ｐｔカ
ソード電極２は図示のように櫛形パターンを持つものと
する。In this embodiment, a porous alumina substrate 1 whose surface is machined is used as the gas-permeable insulating substrate. This alumina substrate 1 serves as a gas diffusion layer that supplies oxygen gas to the cathode electrode formed thereon with diffusion control. First, the Pt cathode electrode 2 is formed on the alumina substrate 1 by the sputtering method. The Pt cathode electrode 2 is assumed to have a comb pattern as shown in the figure.
【０００８】カソード電極２が形成された基板面に次
に、スパッタ法又は蒸着法によって酸化物イオン伝導体
膜として安定化ジルコニア膜３を形成する。具体的には
例えば、ＺｒＯ2 −８mol ％Ｙ2 Ｏ3 ターゲットを用い
たスパッタ法により、イットリアで安定化されたジルコ
ニア膜３を形成する。続いて安定化ジルコニア膜３上
に、再度スパッタ法によってＰｔアノード電極４を形成
する。Ｐｔアノード電極４は、図示のようにカソード電
極２の櫛歯に重なる櫛形パターンとする。Next, a stabilized zirconia film 3 is formed as an oxide ion conductor film on the surface of the substrate on which the cathode electrode 2 is formed by a sputtering method or a vapor deposition method. Specifically, for example, the yttria-stabilized zirconia film 3 is formed by a sputtering method using a ZrO2 -8 mol% Y2O3 target. Then, the Pt anode electrode 4 is formed again on the stabilized zirconia film 3 by the sputtering method. The Pt anode electrode 4 has a comb pattern overlapping the comb teeth of the cathode electrode 2 as illustrated.
【０００９】この実施例により得られた薄膜限界電流式
酸素センサは、優れた電流電圧特性を示した。その特性
を、センサ温度２００℃の大気中で測定した結果につい
て図２に示す。図２の破線で示す比較例は、Ｐｔカソー
ド電極，アノード電極をベタ構造とした他、実施例と同
様の条件で製造した酸素センサの特性である。両者を比
較して明らかなように、この実施例の素子は急峻な電流
立上がりによる優れた限界電流特性を示す。The thin film limiting current type oxygen sensor obtained by this example showed excellent current-voltage characteristics. The characteristics are shown in FIG. 2 as a result of measurement in the atmosphere at a sensor temperature of 200 ° C. The comparative example indicated by the broken line in FIG. 2 shows the characteristics of the oxygen sensor manufactured under the same conditions as those of the example, except that the Pt cathode electrode and the anode electrode have a solid structure. As is clear from a comparison between the two, the device of this example exhibits excellent limiting current characteristics due to a steep current rise.
【００１０】実施例と比較例の特性の差は、次のように
説明できる。カソード電極２と安定化ジルコニア膜３の
接触部のうち、実際の反応に有効であるのは酸素ガスが
供給されるアルミナ基板１と接触する部分、つまりカソ
ード電極２と安定化ジルコニア膜３及び基板１の三者が
接触する部分、言い換えればカソード電極２のパターン
のエッジ部分である。この実施例の場合、櫛形電極パタ
ーンを用いているために、ベタ構造の電極を用いた場合
に比べて反応に有効な面積がはるかに大きくなっている
のである。The difference in characteristics between the example and the comparative example can be explained as follows. Of the contact portions between the cathode electrode 2 and the stabilized zirconia film 3, what is effective for the actual reaction is the portion in contact with the alumina substrate 1 to which oxygen gas is supplied, that is, the cathode electrode 2 and the stabilized zirconia film 3 and the substrate. 1 is the contact portion of the three, in other words, the edge portion of the pattern of the cathode electrode 2. In the case of this embodiment, since the comb-shaped electrode pattern is used, the area effective for the reaction is much larger than that in the case of using the solid structure electrode.
【００１１】[0011]
【発明の効果】以上述べたように本発明によれば、カソ
ード電極及びアノード電極をスパッタ法によって櫛形パ
ターンをもって形成することにより、限界電流式酸素セ
ンサの量産が可能となり、同時に優れた特性を得ること
が可能となる。As described above, according to the present invention, by forming the cathode electrode and the anode electrode in a comb pattern by the sputtering method, the limiting current type oxygen sensor can be mass-produced and at the same time excellent characteristics can be obtained. It becomes possible.
【図１】 本発明の一実施例による限界電流式酸素セン
サの平面図と断面図である。FIG. 1 is a plan view and a cross-sectional view of a limiting current type oxygen sensor according to an embodiment of the present invention.
【図２】 同実施例の酸素センサの特性である。FIG. 2 is a characteristic of the oxygen sensor of the example.
１…ポーラスアルミナ基板、２…Ｐｔカソード電極、
３…安定化ジルコニア膜、４…Ｐｔアノード電極。1 ... Porous alumina substrate, 2 ... Pt cathode electrode,
3 ... Stabilized zirconia film, 4 ... Pt anode electrode.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 宿利 尚次 東京都江東区木場１丁目５番１号 株式 会社フジクラ内 (72)発明者 石橋 功成 東京都江東区木場１丁目５番１号 株式 会社フジクラ内 (72)発明者 加藤 嘉則 東京都江東区木場１丁目５番１号 株式 会社フジクラ内 (56)参考文献 特開 平２−196953（ＪＰ，Ａ) 特開 平６−102235（ＪＰ，Ａ) 特開 平６−102233（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shoji Sukuri 1-5-1 Kiba, Koto-ku, Tokyo Fujikura Ltd. (72) Inventor Isao Ishibashi 1-1-5 Kiba, Koto-ku, Tokyo Fujikura Ltd. (72) Inventor Yoshinori Kato 1-5-1, Kiba, Koto-ku, Tokyo Fujikura Ltd. (56) References JP-A-2-196953 (JP, A) JP-A-6-102235 (JP) , A) JP-A-6-102233 (JP, A)
Claims (1)
上にスパッタ法により櫛形パターンのカソード電極を形
成する工程と、 前記カソード電極が形成された基板上にスパッタ法又蒸
着法により前記カソード電極を覆って酸化物イオン伝導
体膜を形成する工程と、 前記酸化物イオン伝導体膜上にスパッタ法により櫛形パ
ターンのアノード電極を形成する工程と、 を有することを特徴とする限界電流式酸素センサの製造
方法。[Claim 1 wherein said cathode electrode and forming a cathode electrode of the comb pattern by a sputtering method on a gas permeable insulating substrate having a diffusion rate-controlling, by sputtering Further deposition on the substrate on which the cathode electrode is formed And a step of forming an oxide ion conductor film on the oxide ion conductor film, and a step of forming a comb-shaped anode electrode on the oxide ion conductor film by a sputtering method. Manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5207094A JP2514582B2 (en) | 1993-07-29 | 1993-07-29 | Method of manufacturing limiting current type oxygen sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5207094A JP2514582B2 (en) | 1993-07-29 | 1993-07-29 | Method of manufacturing limiting current type oxygen sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0743340A JPH0743340A (en) | 1995-02-14 |
| JP2514582B2 true JP2514582B2 (en) | 1996-07-10 |
Family
ID=16534105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5207094A Expired - Fee Related JP2514582B2 (en) | 1993-07-29 | 1993-07-29 | Method of manufacturing limiting current type oxygen sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2514582B2 (en) |
-
1993
- 1993-07-29 JP JP5207094A patent/JP2514582B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0743340A (en) | 1995-02-14 |
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