JP2511616B2 - 半導体集積回路製造方法 - Google Patents

半導体集積回路製造方法

Info

Publication number
JP2511616B2
JP2511616B2 JP4158907A JP15890792A JP2511616B2 JP 2511616 B2 JP2511616 B2 JP 2511616B2 JP 4158907 A JP4158907 A JP 4158907A JP 15890792 A JP15890792 A JP 15890792A JP 2511616 B2 JP2511616 B2 JP 2511616B2
Authority
JP
Japan
Prior art keywords
resist
substrate
arc
planarized
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP4158907A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06252044A (ja
Inventor
デヴィッド カスバ−ト ジョン
フ チョン−チェン
ラ−マン ウラスポ クラウル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
AT&T Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Inc filed Critical AT&T Inc
Publication of JPH06252044A publication Critical patent/JPH06252044A/ja
Application granted granted Critical
Publication of JP2511616B2 publication Critical patent/JP2511616B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof

Landscapes

  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP4158907A 1991-05-31 1992-05-27 半導体集積回路製造方法 Expired - Fee Related JP2511616B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US70895691A 1991-05-31 1991-05-31
US708956 1991-05-31

Publications (2)

Publication Number Publication Date
JPH06252044A JPH06252044A (ja) 1994-09-09
JP2511616B2 true JP2511616B2 (ja) 1996-07-03

Family

ID=24847867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4158907A Expired - Fee Related JP2511616B2 (ja) 1991-05-31 1992-05-27 半導体集積回路製造方法

Country Status (2)

Country Link
EP (1) EP0525942A2 (OSRAM)
JP (1) JP2511616B2 (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5308742A (en) * 1992-06-03 1994-05-03 At&T Bell Laboratories Method of etching anti-reflection coating
US5326727A (en) * 1992-12-30 1994-07-05 At&T Bell Laboratories Method for integrated circuit fabrication including linewidth control during etching
EP0697723A3 (en) * 1994-08-15 1997-04-16 Ibm Process for metallizing an insulating layer
TW363220B (en) * 1996-07-15 1999-07-01 Applied Materials Inc Etching organic antireflective coating from a substrate
US6617257B2 (en) * 2001-03-30 2003-09-09 Lam Research Corporation Method of plasma etching organic antireflective coating
DE10151628C2 (de) * 2001-10-19 2003-10-16 Promos Technologies Inc Ein Verfahren zur Verbesserung der Oberflächengleichförmigkeit einer antireflektierenden Beschichtung, die zur Erzeugung von Kontaktanschlüssen verwendet wird
DE10310346B4 (de) * 2003-03-10 2005-06-09 Infineon Technologies Ag Verfahren zum Herstellen einer Photomaske auf einer Mikrostruktur mit Gräben und entsprechende Verwendung der Photomaske

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4362809A (en) * 1981-03-30 1982-12-07 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
JPS6218054A (ja) * 1985-07-17 1987-01-27 Hitachi Ltd 半導体装置の製造方法
JPS63278335A (ja) * 1987-05-11 1988-11-16 Hitachi Ltd 多層レジストによるパタ−ン形成法
DE3873848T2 (de) * 1987-07-16 1993-03-11 Texas Instruments Inc Behandlungsapparat und -verfahren.
DE68928548T2 (de) * 1988-09-28 1998-04-23 Brewer Science Inc Multifunktionelle photolithographische zusammensetzungen

Also Published As

Publication number Publication date
JPH06252044A (ja) 1994-09-09
EP0525942A2 (en) 1993-02-03
EP0525942A3 (OSRAM) 1994-03-02

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