JP2508406B2 - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JP2508406B2 JP2508406B2 JP2319656A JP31965690A JP2508406B2 JP 2508406 B2 JP2508406 B2 JP 2508406B2 JP 2319656 A JP2319656 A JP 2319656A JP 31965690 A JP31965690 A JP 31965690A JP 2508406 B2 JP2508406 B2 JP 2508406B2
- Authority
- JP
- Japan
- Prior art keywords
- differential
- stage
- region
- pressure sensor
- amplification
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 ［産業上の利用分野］ この発明は半導体圧力センサに係わり、特に半導体チ
ップ上への差動増幅回路の配置構造に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor, and more particularly to an arrangement structure of a differential amplifier circuit on a semiconductor chip.
［従来の技術］ 第２図は、従来の半導体圧力センサの構成を示すセン
サチップのパターン形成領域の平面図である。同図にお
いて、１は半導体チップ、２は半導体チップ１の背面側
がエッチングなどにより他の部分より極めて薄い領域に
加工されたダイヤフラム領域、31,32,33,34はダイヤフ
ラム領域２の四辺側にそれぞれ形成された歪ゲージ抵抗
であり、これらの歪ゲージ抵抗31〜34は図示しない配線
によりブリッジ回路に結線されてセンサ素子が形成され
る。４は前記センサ素子の出力を増幅する増幅回路が形
成される増幅回路形成領域である。[Prior Art] FIG. 2 is a plan view of a pattern formation region of a sensor chip showing a configuration of a conventional semiconductor pressure sensor. In the figure, 1 is a semiconductor chip, 2 is a diaphragm region in which the back surface side of the semiconductor chip 1 is processed into an extremely thin region by etching or the like, and 3 1 , 3 2 , 3, 3 and 3 4 are diaphragm regions 2. These strain gauge resistors are formed on the four sides, and these strain gauge resistors 3 1 to 3 4 are connected to a bridge circuit by wiring (not shown) to form a sensor element. Reference numeral 4 is an amplification circuit formation region in which an amplification circuit for amplifying the output of the sensor element is formed.
第３図は半導体圧力センサの等価回路を示す図であ
る。同図において、前述した歪ゲージ抵抗31,32,33,34
はブリッジ回路接続されてセンサ素子３を構成してい
る。５はセンサ素子３の出力を差動増幅する差動増幅回
路である。FIG. 3 is a diagram showing an equivalent circuit of the semiconductor pressure sensor. In the figure, the strain gauge resistors 3 1 , 3 2 , 3 3 , 3 4 described above
Are connected in a bridge circuit to form the sensor element 3. A differential amplifier circuit 5 differentially amplifies the output of the sensor element 3.
第４図は第３図における差動増幅回路５の構成を示す
ブロック図である。同図において、51は入力信号を入力
する差動段、52は差動信号を増幅する電流増幅段、53は
電流増幅段52で増幅された信号を出力する出力段であ
る。FIG. 4 is a block diagram showing the configuration of the differential amplifier circuit 5 in FIG. In the figure, 5 1 is a differential stage for inputting an input signal, 5 2 is a current amplification stage for amplifying the differential signal, and 5 3 is an output stage for outputting the signal amplified by the current amplification stage 5 2 .
次に動作について説明する。 Next, the operation will be described.
半導体チップ１のダイヤフラム領域２上には歪ゲージ
抵抗31,32,33,34がブリッジ接続されてセンサ素子３が
形成され、このセンサ素子３が形成されたダイヤフラム
領域２のチップ背面側はエッチングにより他の部分より
極めて薄い領域に加工され、圧力変化による応力を受け
易い構成となっているので、圧力−電気変換が行われ
る。電気に変換された信号は、増幅回路形成領域４上に
形成された差動増幅回路５により増幅され、圧力センサ
として機能する。なお、差動増幅回路５における差動段
51と電流増幅段52と出力段53とは増幅回路形成領域４内
に渾然と形成されている。Strain gauge resistors 3 1 , 3 2 , 3 3 , 3 4 are bridge-connected on the diaphragm region 2 of the semiconductor chip 1 to form a sensor element 3, and the chip rear surface of the diaphragm region 2 on which the sensor element 3 is formed. Since the side is processed into a region extremely thinner than the other part by etching and is susceptible to stress due to pressure change, pressure-electric conversion is performed. The signal converted into electricity is amplified by the differential amplifier circuit 5 formed on the amplifier circuit formation region 4, and functions as a pressure sensor. The differential stage in the differential amplifier circuit 5
5 1 , the current amplification stage 5 2 and the output stage 5 3 are abruptly formed in the amplification circuit formation region 4.
［発明が解決しようとする課題］ 従来の半導体圧力センサは、以上のように構成されて
いるので、差動段51が応力を受け易いダイヤフラム領域
２の近傍に形成されることがある。本来、差動段51は微
小な電流が流れているので、応力によって影響を大きく
受けて電流量が変化してしまい、正しく増幅機能しなく
なって増幅特性が悪くなるなどの問題があった。[INVENTION Problems to be Solved] conventional semiconductor pressure sensor, which is configured as described above, may be differential stage 5 1 is formed in the vicinity of the stressed easily diaphragm region 2. Originally, since the differential stage 5 1 is flowing a minute current, the amount of current greatly influenced by the stress ends up changing the amplification characteristic is a problem, such as worse no longer properly amplifying function.
この発明は上記のような問題を解消するためになされ
たものであり、差動段に流れる電流が応力によって変化
しないようにし、良好あ増幅特性が得られる半導体圧力
センサを提供することを目的としている。The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor pressure sensor in which a current flowing through a differential stage does not change due to stress and a good amplification characteristic is obtained. There is.
［課題を解決するための手段］ このような課題を解決するために本発明による半導体
圧力センサは、応力に影響を受け易い差動段を半導体チ
ップ内のダイヤフラム領域の外側に形成する増幅回路形
成領域の最外周に配置するものである。[Means for Solving the Problem] In order to solve such a problem, a semiconductor pressure sensor according to the present invention has an amplifier circuit formation in which a differential stage susceptible to stress is formed outside a diaphragm region in a semiconductor chip. It is arranged on the outermost periphery of the region.
［作用］ この発明においては、差動段に流れる微小電流量が応
力により変化することがなくなり、良好な増幅特性を得
ることができる。[Operation] In the present invention, the minute current amount flowing in the differential stage does not change due to stress, and good amplification characteristics can be obtained.
［実施例］ 以下、この発明の実施例を図を用いて説明する。[Embodiment] An embodiment of the present invention will be described below with reference to the drawings.
第１図はこの発明による半導体圧力センサの一実施例
による構成を示す平面図であり前述に図と同一部分には
同一符号を付してある。同図において、半導体チップ１
上のダイヤフラム領域２の外周部分に形成された増幅回
路形成領域４は、ダイヤフラム領域２の外側に形成され
た内側増幅回路形成領域41と、この内側増幅回路形成領
域41の外側に形成された外側増幅回路形成領域42とから
構成されており、この内側増幅回路形成領域41にはセン
サ素子３の出力を増幅する差動増幅回路５の差動段51を
除く電流増幅段52および出力段53が主に形成され、外側
増幅回路形成領域42には差動増幅回路５の差動段51が主
に形成されている。FIG. 1 is a plan view showing the structure of an embodiment of a semiconductor pressure sensor according to the present invention, and the same parts as those in the drawing are designated by the same reference numerals. In the figure, the semiconductor chip 1
Amplifier circuit formation region 4 formed in the outer peripheral portion of the diaphragm area 2 above, the inner amplifier circuit formation region 4 1 formed outside the diaphragm region 2, is formed outside of the inner amplifier circuit formation region 4 1 It was are composed of an outer amplifying circuit formation region 4 2 Prefecture, the current amplification stage 5 in the inner amplifier circuit formation region 4 1 except for the differential stage 5 1 of the differential amplifier circuit 5 for amplifying the output of the sensor element 3 2 and the output stage 5 3 are mainly formed, and the differential stage 5 1 of the differential amplification circuit 5 is mainly formed in the outer amplification circuit formation region 4 2 .
このような構成によると、差動増幅回路５の差動段51
はダイヤフラム領域２から離間した領域である最外周側
の外側増幅回路形成領域42に形成されるので、応力によ
って差動段51に流れる微小電流の電流量が変化すること
がなくなる。According to such a configuration, the differential stage 5 1 of the differential amplifier circuit 5 1
Since being formed on the outer amplifying circuit formation region 4 2 the outermost side, which is a region spaced from the diaphragm region 2, thereby preventing the amount of current of a small current flowing through the stress in the differential stage 5 1 changes.
［発明の効果］ 以上、説明したようにこの発明によれば、差動増幅回
路の差動段をダイヤフラム領域から離間させて配置した
ので、差動段に流れる微小電流の電流量が応力によって
変化することがなくなり、精度の高い増幅特性が得られ
るという極めて優れた効果が得られる。[Effects of the Invention] As described above, according to the present invention, since the differential stage of the differential amplifier circuit is arranged apart from the diaphragm region, the amount of minute current flowing through the differential stage changes due to stress. And the extremely excellent effect that a highly accurate amplification characteristic is obtained can be obtained.
第１図はこの発明の一実施例による半導体圧力センサの
構成を示す圧力センサチップの平面図、第２図は従来の
圧力センサチップの平面図、第３図は等価回路を示す
図、第４図は差動増幅回路のブロック図である。 １……半導体チップ、２……ダイヤフラム領域、３……
センサ素子、31,32,33,34……歪ケージ抵抗、４……増
幅回路形成領域、41……内側増幅回路形成領域、42……
外側増幅回路形成領域、５……差動増幅回路、51……差
動段、52……電流増幅段、53……出力段。FIG. 1 is a plan view of a pressure sensor chip showing the structure of a semiconductor pressure sensor according to an embodiment of the present invention, FIG. 2 is a plan view of a conventional pressure sensor chip, FIG. 3 is a view showing an equivalent circuit, and FIG. The figure is a block diagram of a differential amplifier circuit. 1 ... Semiconductor chip, 2 ... Diaphragm area, 3 ...
Sensor element, 3 1 , 3 2 , 3, 3 , 4 ...... Strain cage resistance, 4 …… Amplification circuit formation area, 4 1 …… Inner amplification circuit formation area, 4 2 ……
Outer amplification circuit formation area, 5 ... Differential amplification circuit, 5 1 ... Differential stage, 5 2 ... Current amplification stage, 5 3 ... Output stage.
Claims (1)
域および差動増幅回路を設けた半導体圧力センサにおい
て、 前記ダイヤフラム領域の外側に内側増幅回路形成領域
と、この内側増幅回路形成領域の外側に外側増幅回路形
成領域とを形成し、前記内側増幅回路形成領域，外側増
幅回路形成領域には前記差動増幅回路の電流増幅段およ
び出力段を配置し、前記外側増幅回路形成領域には前記
差動増幅回路の差動段を配置したことを特徴とする半導
体圧力センサ。1. A semiconductor pressure sensor in which a semiconductor chip is provided with at least a diaphragm region and a differential amplifier circuit, wherein an inner amplifier circuit forming region is formed outside the diaphragm region, and an outer amplifier circuit is formed outside the inner amplifier circuit forming region. And a current amplification stage and an output stage of the differential amplification circuit are arranged in the inner amplification circuit formation region and the outer amplification circuit formation region, and the current amplification stage and the output stage of the differential amplification circuit are arranged in the outer amplification circuit formation region. A semiconductor pressure sensor having a differential stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2319656A JP2508406B2 (en) | 1990-11-21 | 1990-11-21 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2319656A JP2508406B2 (en) | 1990-11-21 | 1990-11-21 | Semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04188002A JPH04188002A (en) | 1992-07-06 |
| JP2508406B2 true JP2508406B2 (en) | 1996-06-19 |
Family
ID=18112736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2319656A Expired - Lifetime JP2508406B2 (en) | 1990-11-21 | 1990-11-21 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2508406B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH073380B2 (en) * | 1983-05-31 | 1995-01-18 | 株式会社日立製作所 | Integrated pressure sensor |
-
1990
- 1990-11-21 JP JP2319656A patent/JP2508406B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04188002A (en) | 1992-07-06 |
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