JP2508281B2 - High temperature superconducting microstrip line - Google Patents
High temperature superconducting microstrip lineInfo
- Publication number
- JP2508281B2 JP2508281B2 JP1199340A JP19934089A JP2508281B2 JP 2508281 B2 JP2508281 B2 JP 2508281B2 JP 1199340 A JP1199340 A JP 1199340A JP 19934089 A JP19934089 A JP 19934089A JP 2508281 B2 JP2508281 B2 JP 2508281B2
- Authority
- JP
- Japan
- Prior art keywords
- high temperature
- thin film
- temperature superconductor
- microstrip line
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Waveguides (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、高温超伝導体を用いたマイクロストリップ
線路に関する。The present invention relates to a microstrip line using a high temperature superconductor.
近年、高温超伝導体の発見により、この超伝導体の各
種応用に関する研究開発が活発化している。マイクロ波
ミリ波の分野においては、伝送線路の損失を減らすため
に高温超伝導体を用いたマイクロストリップ線路の開発
が進んでいる。In recent years, the discovery of high-temperature superconductors has led to active research and development on various applications of these superconductors. In the field of microwave and millimeter wave, development of a microstrip line using a high temperature superconductor is in progress in order to reduce the loss of the transmission line.
第2図は従来の高温超伝導マイクロストリップ線路を
示す図であり、(a)は断面図、(b)は斜視図であ
る。このような従来例は例えば1989年度電子情報通信学
会春季全国大会予稿集5−67(講演番号C−67)に示さ
れている。第2図においてMgOまたはSrTiO3からなる基
板1上にYBa2Cu3O7からなるマイクロストリップ導体2
が設けられ、基板1の下面にはYBa2Cu3O7からなる接地
電極3が設けられている。イットリウム系に限らず、タ
リウム系,ビスマス系の高温超伝導体薄膜は、MgOまた
はSrTiO3基板上において良好な薄膜が得られる。しかし
ながら、これらの基板の誘電正接は1×10-5〜5×10-4
程度ある。FIG. 2 is a diagram showing a conventional high temperature superconducting microstrip line, in which (a) is a sectional view and (b) is a perspective view. Such a conventional example is shown, for example, in the 1989 IEICE Spring National Conference Proceedings 5-67 (lecture number C-67). In FIG. 2, a microstrip conductor 2 made of YBa 2 Cu 3 O 7 is formed on a substrate 1 made of MgO or SrTiO 3 .
And the ground electrode 3 made of YBa 2 Cu 3 O 7 is provided on the lower surface of the substrate 1. Not only yttrium-based, but also thallium-based and bismuth-based high-temperature superconductor thin films can be obtained as good thin films on MgO or SrTiO 3 substrates. However, the dielectric loss tangent of these substrates is 1 × 10 −5 to 5 × 10 −4.
There is a degree.
第2図に示された構造のマイクロストリップ線路の場
合には、導体に超伝導体を用いているため導体損は極め
て小さいが、電気力線4は基板1の中に存在するため大
きな誘電損を生じる。このため伝送損失の低いストリッ
プ線路が得られなかった。In the case of the microstrip line having the structure shown in FIG. 2, the conductor loss is extremely small because the conductor is a superconductor, but the electric flux lines 4 are present in the substrate 1, so that a large dielectric loss is caused. Cause Therefore, a strip line with low transmission loss could not be obtained.
本発明の目的は、良好な高温超伝導体薄膜が形成でき
るMgOまたはSrTiO3から成る基板を用いて、誘電損が極
めて小さいマイクロストリップ線路を提供することにあ
る。It is an object of the present invention to provide a microstrip line having extremely low dielectric loss by using a substrate made of MgO or SrTiO 3 which can form a good high temperature superconductor thin film.
本発明の高温超伝導マイクロストリップ線路は、 MgOまたはSrTiO3から成る第1の基板上にストライプ
状に形成された第1の高温超伝導体薄膜と、 MgOまたはSrTiO3から成る第2の基板上に形成された
第2の高温超伝導体薄膜と、 前記第1の高温超伝導体薄膜と前記第2の高温超伝導
体薄膜とが一定の距離を置いて対面するように、前記第
1の基板と前記第2の基板とを支持する支持体とを有
し、 前記第1の高温伝導体薄膜をマイクロストリップ導体
として用い、前記第2の高温超伝導体薄膜を接地導体と
して用いたことを特徴としている。High-temperature superconducting microstrip line of the present invention, the first high-temperature superconductor and the thin film, a second substrate made of MgO or SrTiO 3 formed in stripes on a first substrate made of MgO or SrTiO 3 The second high temperature superconductor thin film formed on the first high temperature superconductor thin film, the first high temperature superconductor thin film and the second high temperature superconductor thin film facing each other with a constant distance. A substrate supporting the substrate and the second substrate, wherein the first high-temperature conductor thin film is used as a microstrip conductor, and the second high-temperature superconductor thin film is used as a ground conductor. It has a feature.
本発明においては、超伝導マイクロストリップ導体と
超伝導接地導体とが空気等を挟んで対面しているため、
誘電損を極めて小さくできる。この結果、例えば特性イ
ンピーダンス50Ωのマイクロストリップ線路について言
えば、10GHzで1cm当り0.001dB以下の伝送損失を実現で
きる。In the present invention, since the superconducting microstrip conductor and the superconducting ground conductor face each other with air or the like interposed therebetween,
Dielectric loss can be made extremely small. As a result, for example, regarding a microstrip line having a characteristic impedance of 50Ω, a transmission loss of 0.001 dB or less per cm at 10 GHz can be realized.
第1図は本発明の実施例の高温超伝導マイクロストリ
ップ線路を示す図であり、(a)は断面図、(b)は斜
視図である。第1図において、MgOまたはSrTiO3からな
る基板11に接してストライプ状に形成されたYBa2Cu3O7
から成る高温超伝導体薄膜13と、MgOまたはSrTiO3から
なる基板12に接して形成されたYBa2Cu3O7からなる高温
超伝導体薄膜14とが空気16を挟んで対面している。これ
ら基板11,12は、側面支持絶縁体15により支持されてい
る。FIG. 1 is a diagram showing a high temperature superconducting microstrip line of an embodiment of the present invention, (a) is a sectional view and (b) is a perspective view. In FIG. 1, YBa 2 Cu 3 O 7 formed in a stripe shape in contact with a substrate 11 made of MgO or SrTiO 3
The high-temperature superconductor thin film 13 made of Y and the high-temperature superconductor thin film 14 made of YBa 2 Cu 3 O 7 formed in contact with the substrate 12 made of MgO or SrTiO 3 face each other with the air 16 interposed therebetween. These substrates 11 and 12 are supported by a side surface support insulator 15.
このような構造の高温超伝導マイクロストリップ線路
では、高温超伝導体薄膜13がマイクロストリップ導体を
構成し、高温超伝導体薄膜が接地導体を構成し、電気力
線17は空気16中に存在している。このマイクロストリッ
プ線路の特性インピーダンスZoは、 と表される。(1)式において、Wはマイクロストリッ
プ導体13の幅、Sはマイクロストリップ導体13と接地導
体14との間隔、μrは比透磁率、μo,εoはそれぞれ真
空中の透磁率、誘電率、Tは高温超伝導体薄膜13,14の
厚さ、λはロンドンの侵入長である。(1)式において
T/λ》1,μr=1,εr=1,S=100μm,W=700μm,λ=0.15
μmとすると、Zo≒50Ωとなる。In the high temperature superconducting microstrip line having such a structure, the high temperature superconductor thin film 13 constitutes a microstrip conductor, the high temperature superconductor thin film constitutes a ground conductor, and the electric force lines 17 are present in the air 16. ing. The characteristic impedance Z o of this microstrip line is It is expressed as In the equation (1), W is the width of the microstrip conductor 13, S is the distance between the microstrip conductor 13 and the ground conductor 14, μ r is the relative magnetic permeability, μ o and ε o are the magnetic permeability in vacuum and the dielectric constant, respectively. The ratio, T is the thickness of the high temperature superconductor thin films 13 and 14, and λ is the penetration length of London. In equation (1)
T / λ >> 1, μ r = 1, ε r = 1, S = 100 μm, W = 700 μm, λ = 0.15
If μm, then Z o ≈50Ω.
なお上記の実施例においては、超伝導体薄膜に高温超
伝導体であるYBa2Cu3O7を用いたが、超伝導体はイット
リウム系に限らず、タリウム系,ビスマス系も、MgOお
よびSrTiO3基板上に良好な薄膜を成長させることができ
るため、これらの超伝導体を用いてもよいことはいうま
でもない。In the above examples, YBa 2 Cu 3 O 7 which is a high temperature superconductor was used for the superconductor thin film, but the superconductor is not limited to the yttrium system, and the thallium system and the bismuth system also contain MgO and SrTiO 3. it is possible to grow a good thin film 3 on a substrate, it may of course be used these superconductors.
また、超伝導ストリップ導体と接地導体の間の空間は
空気でなくてもよく、真空であっても、あるいは液体窒
素等が充てんされていても良い。The space between the superconducting strip conductor and the ground conductor may not be air, may be vacuum, or may be filled with liquid nitrogen or the like.
〔発明の効果〕 本発明の高温超伝導マイクロストリップ線路では、電
気力線は例えば空気中に存在するため誘電損は極めて小
さく、加えて超伝導体を用いているため導体損も極めて
小さいという効果がある。このため1cm当り0.001dB以下
の伝送損失を実現でき、マイクロ波,ミリ波工学上の意
義は大きい。[Advantages of the Invention] In the high-temperature superconducting microstrip line of the present invention, the electric lines of force are present in the air, for example, so that the dielectric loss is extremely small, and in addition, since the superconductor is used, the conductor loss is also extremely small. There is. Therefore, a transmission loss of 0.001 dB or less per cm can be realized, which is of great significance for microwave and millimeter wave engineering.
第1図は本発明の実施例の高温超伝導マイクロストリッ
プ線路、 第2図は従来例の高温超伝導マイクロストリップ線路で
ある。 1,11,12……基板 2,3,13,14……高温超伝導体薄膜 4,17……電気力線 15……側面支持絶縁体 16……空気FIG. 1 shows a high temperature superconducting microstrip line according to an embodiment of the present invention, and FIG. 2 shows a conventional high temperature superconducting microstrip line. 1,11,12 …… Substrate 2,3,13,14 …… High temperature superconductor thin film 4,17 …… Line of electric force 15 …… Side support insulator 16 …… Air
Claims (1)
ストライプ状に形成された第1の高温超伝導体薄膜と、 MgOまたはSrTiO3から成る第2の基板上に形成された第
2の高温超伝導体薄膜と、 前記第1の高温超伝導体薄膜と前記第2の高温超伝導体
薄膜とが一定の距離を置いて対面するように、前記第1
の基板と前記第2の基板とを支持する支持体とを有し、 前記第1の高温伝導体薄膜をマイクロストリップ導体と
して用い、前記第2の高温超伝導体薄膜を接地導体とし
て用いたことを特徴とする高温超伝導マイクロストリッ
プ線路。1. A first high temperature superconductor thin film formed in stripes on a first substrate made of MgO or SrTiO 3 and a second high temperature superconductor thin film made on a second substrate made of MgO or SrTiO 3 . Said high temperature superconductor thin film, said first high temperature superconductor thin film and said second high temperature superconductor thin film face each other with a constant distance.
A substrate for supporting the second substrate and a support for supporting the second substrate, wherein the first high temperature conductor thin film is used as a microstrip conductor, and the second high temperature superconductor thin film is used as a ground conductor. High-temperature superconducting microstrip line.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1199340A JP2508281B2 (en) | 1989-08-02 | 1989-08-02 | High temperature superconducting microstrip line |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1199340A JP2508281B2 (en) | 1989-08-02 | 1989-08-02 | High temperature superconducting microstrip line |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0364101A JPH0364101A (en) | 1991-03-19 |
JP2508281B2 true JP2508281B2 (en) | 1996-06-19 |
Family
ID=16406160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1199340A Expired - Lifetime JP2508281B2 (en) | 1989-08-02 | 1989-08-02 | High temperature superconducting microstrip line |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2508281B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH057104A (en) * | 1990-10-29 | 1993-01-14 | Sumitomo Electric Ind Ltd | Superconducting microwave component |
JP2822953B2 (en) * | 1995-09-14 | 1998-11-11 | 日本電気株式会社 | Superconducting circuit manufacturing method |
-
1989
- 1989-08-02 JP JP1199340A patent/JP2508281B2/en not_active Expired - Lifetime
Non-Patent Citations (2)
Title |
---|
電子情報通信学会春季全国大会C−65 |
電子情報通信学会春季全国大会C−67 |
Also Published As
Publication number | Publication date |
---|---|
JPH0364101A (en) | 1991-03-19 |
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