JPH0364101A - High temperature superconducting microstrip line - Google Patents
High temperature superconducting microstrip lineInfo
- Publication number
- JPH0364101A JPH0364101A JP1199340A JP19934089A JPH0364101A JP H0364101 A JPH0364101 A JP H0364101A JP 1199340 A JP1199340 A JP 1199340A JP 19934089 A JP19934089 A JP 19934089A JP H0364101 A JPH0364101 A JP H0364101A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- high temperature
- conductor
- temperature superconducting
- microstrip line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002887 superconductor Substances 0.000 claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 28
- 239000004020 conductor Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims description 17
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract description 3
- 239000012212 insulator Substances 0.000 abstract description 3
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、高温超伝導体を用いたマイクロストリップ線
路に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a microstrip line using a high temperature superconductor.
近年、高温超伝導体の発見により、この超伝導体の各種
応用に関する研究開発が活発化している。In recent years, the discovery of high-temperature superconductors has stimulated research and development into various applications of these superconductors.
マイクロ波ミリ波の分野においては、伝送線路の損失を
減らすために高温超伝導体を用いたマイクロストリップ
線路の開発が進んでいる。In the field of microwave and millimeter waves, development of microstrip lines using high-temperature superconductors is progressing in order to reduce loss in transmission lines.
第２図は従来の高温超伝導マイクロストリップ線路を示
す図であり、（ａ）は断面図、（ｂ）は斜視図である。FIG. 2 is a diagram showing a conventional high temperature superconducting microstrip line, in which (a) is a cross-sectional view and (b) is a perspective view.
このような従来例は例えば１９８９年度電子情報通信学
会春季全国大会予稿集５−６７（講演番号Ｃ−６７）に
示されている。第２図においてＭｇＯまたはＳｒＴｉＯ
３からなる基板１上にＹＢａｚＣｕｉＯｔからなるマイ
クロストリップ導体２が設けられ、基板１の下面にはＹ
Ｂａ２Ｃｕ 、Ｏ，からなる接地電極３が設けられてい
る。Such a conventional example is shown, for example, in the 1989 Institute of Electronics, Information and Communication Engineers Spring National Conference Proceedings 5-67 (lecture number C-67). In FIG. 2, MgO or SrTiO
A microstrip conductor 2 made of YBazCuiOt is provided on a substrate 1 made of YBazCuiOt.
A ground electrode 3 made of Ba2Cu and O is provided.
イツトリウム系に限らず、タリウム系、ビスマス系の高
温超伝導体薄膜は、ＭｇＯまたは５ｒＴｉＯ１基板上に
おいて良好な薄膜が得られる。しかしながら、これらの
基板の誘電正接はＩ Ｘｌ０−’〜５Ｘ１０−’程度あ
る。Not only yttrium-based high-temperature superconductor thin films but also thallium-based and bismuth-based high-temperature superconductor thin films can be obtained on MgO or 5rTiO1 substrates. However, the dielectric loss tangent of these substrates is approximately IX10-' to 5X10-'.
［発明が解決しようとする課題〕
第２図に示された構造のマイクロストリップ線路の場合
には、導体に超伝導体を用いているため導体損は極めて
小さいが、電気力線４は基板１の中に存在するため大き
な誘電損を生しる。このため伝送損失の低いストリップ
線路が得られなかった。[Problems to be Solved by the Invention] In the case of the microstrip line having the structure shown in FIG. This causes large dielectric loss. For this reason, a strip line with low transmission loss could not be obtained.
本発明の目的は、良好な高温超伝導体薄膜が形成できる
ＭｇＯまたはＳｒ′Ｔｉ○３から成る基板を用いて、誘
電損が極めて小さいマイクロストリップ線路を提供する
ことにある。An object of the present invention is to provide a microstrip line with extremely low dielectric loss using a substrate made of MgO or Sr'Ti*3 on which a good high-temperature superconductor thin film can be formed.
本発明の高温超伝導マイクロストリップ線路は、ＭｇＯ
またはＳｒＴｉＯ３から成る第１の基板上にストライプ
状に形成された第１の高温超伝導体薄膜と、
ＭｇＯまたはＳｒＴｉＯ３から成る第２の基板上に形成
された第２の高温超伝導体薄膜と、前記第１の高温超伝
導体薄膜と前記第２の高温超伝導体薄膜とが一定の距離
を置いて対面するように、前記第１の基板と前記第２の
基板とを支持する支持体とを有し、
前記第１の高温伝導体薄膜をマイクロストリップ導体と
して用い、前記第２の高温超伝導体薄膜を接地導体とし
て用いたことを特徴としている。The high temperature superconducting microstrip line of the present invention is made of MgO
or a first high temperature superconductor thin film formed in a stripe shape on a first substrate made of SrTiO3, and a second high temperature superconductor thin film formed on a second substrate made of MgO or SrTiO3; a support that supports the first substrate and the second substrate so that the first high temperature superconductor thin film and the second high temperature superconductor thin film face each other at a certain distance; The first high-temperature conductor thin film is used as a microstrip conductor, and the second high-temperature superconductor thin film is used as a ground conductor.
本発明においては、超伝導マイクロストリップ導体と超
伝導接地導体とが空気等を挟んで対面しているため、誘
電損を極めて小さくできる。この結果、例えば特性イン
ピーダンス５０Ωのマイクロストリップ線路について言
えば、１０ＧＨｚで１ｃｍ当り０．００１ｄＢ以下の伝
送損失を実現できる。In the present invention, since the superconducting microstrip conductor and the superconducting ground conductor face each other with air or the like in between, dielectric loss can be extremely reduced. As a result, for example, in the case of a microstrip line with a characteristic impedance of 50Ω, a transmission loss of 0.001 dB or less per cm can be realized at 10 GHz.
第１図は本発明の実施例の高温超伝導マイクロストリッ
プ線路を示す図であり、（ａ）は断面図、（ｂ）は斜視
図である。第１図において、ＭｇＯまたはＳ ｒ Ｔ
ｉ Ｏ３からなる基板１１に接してストライプ状に形成
されたＹＢａｚＣｕｓＣ）ｙから成る高温超伝導体薄膜
１３と、ＭｇＯまたはＳ ｒ Ｔ ｉ Ｏｓからなる基
板１２に接して形成されたＹＢａ、Ｃｕ。FIG. 1 is a diagram showing a high-temperature superconducting microstrip line according to an embodiment of the present invention, in which (a) is a cross-sectional view and (b) is a perspective view. In FIG. 1, MgO or S r T
A high temperature superconductor thin film 13 made of YBazCusC)y is formed in a stripe shape in contact with a substrate 11 made of iO3, and YBa, Cu is formed in contact with a substrate 12 made of MgO or SrTiOs.
０、からなる高温超伝導体薄膜１４とが空気１６を挾ん
で対面している。これら基板１１．１２は、側面支持絶
縁体１５により支持されている。A high-temperature superconductor thin film 14 consisting of 0 and 0 faces each other with air 16 in between. These substrates 11 , 12 are supported by side support insulators 15 .
このような構造の高温超伝導マイクロストリップ線路で
は、高温超伝導体薄膜１３がマイクロストリップ導体を
構威し、高温超伝導体薄膜が接地導体を構威し、電気力
線１７は空気１６中に存在している。このマイクロスト
リップ線路の特性インピーダンスス０は、
Ｚｏ＝
・ ・ ・（１）
と表される。（１）式において、Ｗはマイクロストリッ
プ導体１３の幅、Ｓはマイクロストリップ導体１３と接
地導体１４との間隔、μ、は比透磁率、μ０．ε。In a high-temperature superconducting microstrip line with such a structure, the high-temperature superconductor thin film 13 functions as a microstrip conductor, the high-temperature superconductor thin film functions as a ground conductor, and the electric lines of force 17 are connected to the air 16. Existing. The characteristic impedance 0 of this microstrip line is expressed as Zo= (1). In equation (1), W is the width of the microstrip conductor 13, S is the distance between the microstrip conductor 13 and the ground conductor 14, μ is the relative magnetic permeability, μ0. ε.
はそれぞれ真空中の透磁率、誘電率、Ｔは高温超伝導体
薄膜１３．１４の厚さ、λはロンドンの侵入長である。are the magnetic permeability and dielectric constant in vacuum, T is the thickness of the high temperature superconductor thin film 13, 14, and λ is the London penetration length, respectively.
（１）式においてＴ／λ）１．μ、＝１゜ε、＝１，５
＝１００μｍ、Ｗ＝７００ａｍ、 λ＝０．１５μｍ
とすると、Ｚｏξ５０Ωとなる。In equation (1), T/λ)1. μ, = 1° ε, = 1,5
=100μm, W=700am, λ=0.15μm
Then, Zoξ is 50Ω.
なお上記の実施例においては、超伝導体薄膜に高温超伝
導体であるＹ Ｂ ａ ｚ Ｃｕ ３０７を用いたが、
超伝導体はイツトリウム系に限らず、タリウム系。In the above example, YB az Cu 307, which is a high temperature superconductor, was used as the superconductor thin film.
Superconductors are not limited to yttrium, but also thallium.
ビスマス系も、ＭｇＯおよび５ｒＴｉＣｈ基板上に良好
な薄膜を成長させることができるため、これらの超伝導
体を用いてもよいこと番よいうまでもない。Since bismuth-based superconductors can also grow good thin films on MgO and 5rTiCh substrates, it goes without saying that these superconductors may also be used.
また超伝導ストリップ導体と接地導体の間の空間は空気
でなくてもよく、真空であっても、あるいは液体窒素等
が充てんされていても良い。Further, the space between the superconducting strip conductor and the ground conductor does not need to be filled with air, but may be a vacuum or filled with liquid nitrogen or the like.
本発明の高温超伝導マイクロストリップ線路では、電気
力線は例えば空気中に存在するため誘電損は極めて小さ
く、加えて超伝導体を用いているため導体損も極めて小
さいという効果がある。このためＩｃｍ当りＯ，０Ｏ１
ｄＢ以下の伝送損失を実現でき、マイクロ波、壽す波工
学上の意義は大きい。In the high-temperature superconducting microstrip line of the present invention, the lines of electric force exist, for example, in the air, so the dielectric loss is extremely small, and in addition, since a superconductor is used, the conductor loss is also extremely small. Therefore, O,0O1 per Icm
It is possible to achieve a transmission loss of less than dB, and is of great significance in terms of microwave and commercial wave engineering.
第１図は本発明の実施例の高温超伝導マイクストリップ
線路、
第２図は従来例の高温超伝導マイクロストリプ線路であ
る
１、 １１．１２・・・・・基板
２、 ３．１３．１４・・・高温超伝導体薄膜４．１７
・・・・・・・電気力線
１５・・・・・・・・・側面支持絶縁体１６・・・・・
エハ
ロFig. 1 shows a high temperature superconducting microstrip line according to an embodiment of the present invention, and Fig. 2 shows a conventional high temperature superconducting microstrip line 1, 11.12... Substrate 2, 3.13.14 ...High-temperature superconductor thin film 4.17
......Electric force lines 15...Side support insulator 16...
Ehalo
Claims (1)
上にストライプ状に形成された第１の高温超伝導体薄膜
と、 ＭｇＯまたはＳｒＴｉＯ＿３から成る第２の基板上に形
成された第２の高温超伝導体薄膜と、前記第１の高温超
伝導体薄膜と前記第２の高温超伝導体薄膜とが一定の距
離を置いて対面するように、前記第１の基板と前記第２
の基板とを支持する支持体とを有し、 前記第１の高温伝導体薄膜をマイクロストリップ導体と
して用い、前記第２の高温超伝導体薄膜を接地導体とし
て用いたことを特徴とする高温超伝導マイクロストリッ
プ線路。(1) A first high temperature superconductor thin film formed in a stripe shape on a first substrate made of MgO or SrTiO_3, and a second high temperature superconductor thin film formed on a second substrate made of MgO or SrTiO_3. the first substrate and the second substrate such that the body thin film, the first high temperature superconductor thin film and the second high temperature superconductor thin film face each other with a certain distance therebetween;
A high-temperature superconductor, characterized in that the first high-temperature conductor thin film is used as a microstrip conductor, and the second high-temperature superconductor thin film is used as a ground conductor. Conductive microstrip line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1199340A JP2508281B2 (en) | 1989-08-02 | 1989-08-02 | High temperature superconducting microstrip line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1199340A JP2508281B2 (en) | 1989-08-02 | 1989-08-02 | High temperature superconducting microstrip line |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0364101A true JPH0364101A (en) | 1991-03-19 |
| JP2508281B2 JP2508281B2 (en) | 1996-06-19 |
Family
ID=16406160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1199340A Expired - Lifetime JP2508281B2 (en) | 1989-08-02 | 1989-08-02 | High temperature superconducting microstrip line |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2508281B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5504059A (en) * | 1990-10-29 | 1996-04-02 | Sumitomo Electric Industries, Ltd. | Superconducting microwave parts having a package, three substrates, and line and grounding conductors |
| US5845395A (en) * | 1995-09-14 | 1998-12-08 | Nec Corporation | Method of producing high-temperature superconductor thin film device |
-
1989
- 1989-08-02 JP JP1199340A patent/JP2508281B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5504059A (en) * | 1990-10-29 | 1996-04-02 | Sumitomo Electric Industries, Ltd. | Superconducting microwave parts having a package, three substrates, and line and grounding conductors |
| US5845395A (en) * | 1995-09-14 | 1998-12-08 | Nec Corporation | Method of producing high-temperature superconductor thin film device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2508281B2 (en) | 1996-06-19 |
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