JP2025510441A - オーバーレイ計測における特定のフーリエ瞳周波数を分離するためのシステムおよび方法 - Google Patents

オーバーレイ計測における特定のフーリエ瞳周波数を分離するためのシステムおよび方法 Download PDF

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JP2025510441A
JP2025510441A JP2024515882A JP2024515882A JP2025510441A JP 2025510441 A JP2025510441 A JP 2025510441A JP 2024515882 A JP2024515882 A JP 2024515882A JP 2024515882 A JP2024515882 A JP 2024515882A JP 2025510441 A JP2025510441 A JP 2025510441A
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detectors
overlay
overlay metrology
pupil plane
sample
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JP2025510441A5 (enExample
Inventor
ユーリ パスコバー
イタイ グドル
ユバル ルバシェフスキー
ウラジミール レビンスキー
アレクサンダー ヴォルフマン
ヨラム ウジエル
エフゲニー メン
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2024515882A 2022-03-30 2023-02-28 オーバーレイ計測における特定のフーリエ瞳周波数を分離するためのシステムおよび方法 Pending JP2025510441A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/709,200 2022-03-30
US17/709,200 US12487190B2 (en) 2022-03-30 2022-03-30 System and method for isolation of specific fourier pupil frequency in overlay metrology
PCT/US2023/014005 WO2023191988A1 (en) 2022-03-30 2023-02-28 System and method for isolation of specific fourier pupil frequency in overlay metrology

Publications (2)

Publication Number Publication Date
JP2025510441A true JP2025510441A (ja) 2025-04-15
JP2025510441A5 JP2025510441A5 (enExample) 2025-09-29

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Country Link
US (1) US12487190B2 (enExample)
EP (1) EP4377633A4 (enExample)
JP (1) JP2025510441A (enExample)
KR (1) KR20240162475A (enExample)
CN (1) CN117980694A (enExample)
TW (1) TWI915612B (enExample)
WO (1) WO2023191988A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12669327B2 (en) 2022-11-23 2026-06-30 Kla Corporation System and method for suppression of tool induced shift in scanning overlay metrology
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US12704790B2 (en) 2023-04-04 2026-08-11 Kla Corporation System and method for determining overlay measurement of a scanning target
US20250299036A1 (en) 2024-03-20 2025-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Artificial neural network photonic integrated circuits and methods of formation
WO2026145963A1 (en) * 2024-12-30 2026-07-09 Asml Netherlands B.V. Event-based metrology systems and methods

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015099145A (ja) * 2013-10-17 2015-05-28 国立大学法人金沢大学 回折環分析方法および回折環分析装置
JP2015184092A (ja) * 2014-03-24 2015-10-22 桑原　章二 Ｘ線分析装置
JP2019523874A (ja) * 2016-06-11 2019-08-29 ケーエルエー コーポレイション 同時多角度分光法
US20210364279A1 (en) * 2020-05-22 2021-11-25 Kla Corporation Measurement Modes for Overlay

Family Cites Families (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4947413A (en) 1988-07-26 1990-08-07 At&T Bell Laboratories Resolution doubling lithography technique
US5216257A (en) 1990-07-09 1993-06-01 Brueck Steven R J Method and apparatus for alignment and overlay of submicron lithographic features
US5414514A (en) 1993-06-01 1995-05-09 Massachusetts Institute Of Technology On-axis interferometric alignment of plates using the spatial phase of interference patterns
KR100213250B1 (ko) 1996-10-10 1999-08-02 윤종용 위상 쉬프트 마스크 및 그 제조방법
KR100244285B1 (ko) 1996-11-04 2000-02-01 김영환 위상반전 마스크 및 그 제조방법
JPH10214765A (ja) 1997-01-29 1998-08-11 Nikon Corp アライメント方法及び装置
US5808731A (en) 1997-07-31 1998-09-15 International Business Machines Corporation System and method for visually determining the performance of a photolithography system
JP2001093820A (ja) 1999-09-24 2001-04-06 Toshiba Corp マーク、アライメントマーク、合わせずれ測定用マーク、フォトマスク、及び、半導体ウェーハ
US6544694B2 (en) 2000-03-03 2003-04-08 Koninklijke Philips Electronics N.V. Method of manufacturing a device by means of a mask phase-shifting mask for use in said method
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
JP2002134394A (ja) 2000-10-25 2002-05-10 Mitsubishi Materials Corp 多重露光方法及び多重露光装置
TW526573B (en) 2000-12-27 2003-04-01 Koninkl Philips Electronics Nv Method of measuring overlay
WO2002065545A2 (en) 2001-02-12 2002-08-22 Sensys Instruments Corporation Overlay alignment metrology using diffraction gratings
US6958819B1 (en) 2002-04-04 2005-10-25 Nanometrics Incorporated Encoder with an alignment target
US6985229B2 (en) 2002-05-30 2006-01-10 Agere Systems, Inc. Overlay metrology using scatterometry profiling
US7440105B2 (en) 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
US20080144036A1 (en) 2006-12-19 2008-06-19 Asml Netherlands B.V. Method of measurement, an inspection apparatus and a lithographic apparatus
JP4290177B2 (ja) 2005-06-08 2009-07-01 キヤノン株式会社 モールド、アライメント方法、パターン形成装置、パターン転写装置、及びチップの製造方法
KR100715280B1 (ko) 2005-10-01 2007-05-08 삼성전자주식회사 오버레이 키를 이용하는 오버레이 정밀도 측정 방법
WO2007121208A2 (en) 2006-04-11 2007-10-25 Massachusetts Institute Of Technology Nanometer-precision tip-to-substrate control and pattern registration for scanning-probe lithography
JP4958614B2 (ja) 2006-04-18 2012-06-20 キヤノン株式会社 パターン転写装置、インプリント装置、パターン転写方法および位置合わせ装置
US7247843B1 (en) 2006-05-11 2007-07-24 Massachusetts Institute Of Technology Long-range gap detection with interferometric sensitivity using spatial phase of interference patterns
US7528941B2 (en) 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
US7898662B2 (en) 2006-06-20 2011-03-01 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7671990B1 (en) 2006-07-28 2010-03-02 Kla-Tencor Technologies Corporation Cross hatched metrology marks and associated method of use
WO2008134378A1 (en) 2007-04-26 2008-11-06 Kla-Tencor Corporation Optical gain approach for enhancement of overlay and alignment systems performance
JP2009043789A (ja) 2007-08-06 2009-02-26 Elpida Memory Inc パターン形成方法及びマスク
BRPI0820338A2 (pt) 2007-11-09 2017-05-02 Novartis Ag corticosteroides para tratar a diarreia induzida por epotilona ou derivado da epotilona
NL1036857A1 (nl) 2008-04-21 2009-10-22 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
JP5324309B2 (ja) 2009-05-12 2013-10-23 ボンドテック株式会社 アライメント装置、アライメント方法および半導体装置
JP5539011B2 (ja) 2010-05-14 2014-07-02 キヤノン株式会社 インプリント装置、検出装置、位置合わせ装置、及び物品の製造方法
NL2007127A (en) 2010-08-06 2012-02-07 Asml Netherlands Bv Inspection apparatus and method, lithographic apparatus and lithographic processing cell.
KR101185992B1 (ko) 2011-01-03 2012-09-26 에스케이하이닉스 주식회사 오버레이 모니터링 패턴 및 이를 이용한 반도체 소자의 정렬도 측정방법
US9700288B2 (en) 2011-03-29 2017-07-11 Covidien Lp System and method for performing surgical procedures with a modular surgical system having a rail mechanism
JP6039222B2 (ja) 2011-05-10 2016-12-07 キヤノン株式会社 検出装置、検出方法、インプリント装置及びデバイス製造方法
US8592287B2 (en) 2011-08-02 2013-11-26 Taiwan Semiconductor Manufacturing Co., Ltd. Overlay alignment mark and method of detecting overlay alignment error using the mark
JP5694889B2 (ja) 2011-09-29 2015-04-01 富士フイルム株式会社 ナノインプリント方法およびそれに用いられるナノインプリント装置並びにパターン化基板の製造方法
JP6066565B2 (ja) 2012-01-31 2017-01-25 キヤノン株式会社 インプリント装置、および、物品の製造方法
JP5696079B2 (ja) 2012-03-22 2015-04-08 株式会社東芝 マスクおよび半導体装置の製造方法
US8888275B2 (en) * 2012-05-08 2014-11-18 Microvision, Inc. Scanned image projection system employing intermediate image plane
US9535338B2 (en) 2012-05-29 2017-01-03 Asml Netherlands B.V. Metrology method and apparatus, substrate, lithographic system and device manufacturing method
JP5943717B2 (ja) 2012-06-05 2016-07-05 キヤノン株式会社 位置検出システム、インプリント装置、デバイス製造方法、および位置検出方法
US9093458B2 (en) 2012-09-06 2015-07-28 Kla-Tencor Corporation Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
NL2011816A (en) 2012-11-30 2014-06-04 Asml Netherlands Bv Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method.
US9255787B1 (en) 2013-01-21 2016-02-09 Kla-Tencor Corporation Measurement of critical dimension and scanner aberration utilizing metrology targets
US8976356B2 (en) 2013-02-28 2015-03-10 Kabushiki Kaisha Toshiba Measurement mark, method for measurement, and measurement apparatus
US9885961B1 (en) 2013-05-29 2018-02-06 Kla-Tencor Corporation Partly disappearing targets
WO2014194095A1 (en) 2013-05-30 2014-12-04 Kla-Tencor Corporation Combined imaging and scatterometry metrology
US9189705B2 (en) 2013-08-08 2015-11-17 JSMSW Technology LLC Phase-controlled model-based overlay measurement systems and methods
WO2015051970A1 (en) 2013-10-09 2015-04-16 Asml Netherlands B.V. Polarization independent interferometer
JP5932859B2 (ja) 2014-02-18 2016-06-08 キヤノン株式会社 検出装置、インプリント装置、および物品の製造方法
KR101565242B1 (ko) 2014-04-17 2015-11-03 (주)오로스 테크놀로지 기판의 오버레이 에러를 계측하는 계측장치
CN107041152B (zh) 2014-06-27 2019-10-22 伊利诺斯工具制品有限公司 光学应变仪
CN105511238B (zh) 2014-09-26 2017-11-03 中芯国际集成电路制造(上海)有限公司 光刻对准标记结构及形成方法、半导体结构的形成方法
WO2016078862A1 (en) 2014-11-21 2016-05-26 Asml Netherlands B.V. Metrology method and apparatus
CN105807573B (zh) 2014-12-31 2017-12-29 上海微电子装备（集团）股份有限公司 用于套刻误差检测的装置和方法
KR20160121206A (ko) 2015-04-10 2016-10-19 삼성전자주식회사 오버레이 에러의 검출 방법 및 이를 이용한 반도체 장치의 제조 방법
US9864209B2 (en) 2015-05-19 2018-01-09 Kla-Tencor Corporation Self-moire target design principles for measuring unresolved device-like pitches
TWI656409B (zh) 2015-09-09 2019-04-11 美商克萊譚克公司 基於輔助電磁場之引入之一階散射測量疊加之新方法
US20180246420A1 (en) 2015-09-22 2018-08-30 Asml Netherlands B.V. A method and apparatus for determining at least one property of patterning device marker features
US10585357B2 (en) 2015-12-28 2020-03-10 Asml Netherlands B.V. Alternative target design for metrology using modulation techniques
JP6685821B2 (ja) 2016-04-25 2020-04-22 キヤノン株式会社 計測装置、インプリント装置、物品の製造方法、光量決定方法、及び、光量調整方法
IL297496B2 (en) 2016-07-15 2025-03-01 Asml Netherlands Bv Method and device for designing a target field for metrology
JP6716779B2 (ja) 2016-07-21 2020-07-01 エーエスエムエル ネザーランズ ビー．ブイ． ターゲットの測定方法、基板、計測装置およびリソグラフィ装置
WO2018071063A1 (en) 2016-10-14 2018-04-19 Kla-Tencor Corporation Diffraction-based focus metrology
US10527952B2 (en) 2016-10-25 2020-01-07 Kla-Tencor Corporation Fault discrimination and calibration of scatterometry overlay targets
EP3321738A1 (en) 2016-11-10 2018-05-16 ASML Netherlands B.V. Method of measuring a parameter of a device manufacturing process, metrology apparatus, substrate, target, device manufacturing system, and device manufacturing method
US10983005B2 (en) 2016-12-15 2021-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Spectroscopic overlay metrology
JP6971567B2 (ja) 2016-12-16 2021-11-24 キヤノン株式会社 位置合わせ装置、位置合わせ方法、リソグラフィ装置、および物品製造方法
US10824079B2 (en) 2017-01-03 2020-11-03 Kla-Tencor Corporation Diffraction based overlay scatterometry
WO2018147938A1 (en) 2017-02-10 2018-08-16 Kla-Tencor Corporation Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements
US11112369B2 (en) 2017-06-19 2021-09-07 Kla-Tencor Corporation Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay
EP3454129A1 (en) 2017-09-07 2019-03-13 ASML Netherlands B.V. Beat patterns for alignment on small metrology targets
US10795268B2 (en) 2017-09-29 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for measuring overlay errors using overlay measurement patterns
WO2019110211A1 (en) 2017-12-04 2019-06-13 Asml Netherlands B.V. Measurement method, patterning device and device manufacturing method
US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
KR20200096843A (ko) 2018-01-17 2020-08-13 에이에스엠엘 네델란즈 비.브이. 타겟 측정 방법, 및 계측 장치
US11067389B2 (en) 2018-03-13 2021-07-20 Kla Corporation Overlay metrology system and method
WO2020046408A1 (en) 2018-08-28 2020-03-05 Kla-Tencor Corporation Off-axis illumination overlay measurement using two-diffracted orders imaging
KR102873433B1 (ko) 2018-11-21 2025-10-17 케이엘에이 코포레이션 단일 셀 그레이 산란계측 오버레이 타겟 및 다양한 조명 파라미터를 사용한 이들의 측정
US11073768B2 (en) 2019-06-26 2021-07-27 Kla Corporation Metrology target for scanning metrology
JP7682146B2 (ja) 2019-07-08 2025-05-23 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジ方法及び関連のコンピュータプロダクト
US11353799B1 (en) 2019-07-23 2022-06-07 Kla Corporation System and method for error reduction for metrology measurements
US11256177B2 (en) 2019-09-11 2022-02-22 Kla Corporation Imaging overlay targets using Moiré elements and rotational symmetry arrangements
US11409205B2 (en) 2020-02-07 2022-08-09 Kla Corporation Non-orthogonal target and method for using the same in measuring misregistration of semiconductor devices
US11604149B2 (en) 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
US11353321B2 (en) 2020-06-12 2022-06-07 Kla Corporation Metrology system and method for measuring diagonal diffraction-based overlay targets
CN111766764A (zh) 2020-06-24 2020-10-13 上海华力集成电路制造有限公司 一种套刻精度量测标记及其使用方法
US11164307B1 (en) 2020-07-21 2021-11-02 Kla Corporation Misregistration metrology by using fringe Moiré and optical Moiré effects
US11300405B2 (en) 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
US11378394B1 (en) 2020-12-11 2022-07-05 Kla Corporation On-the-fly scatterometry overlay metrology target
US11428642B2 (en) 2021-01-04 2022-08-30 Kla Corporation Scanning scatterometry overlay measurement
US11300524B1 (en) 2021-01-06 2022-04-12 Kla Corporation Pupil-plane beam scanning for metrology
US11526086B2 (en) 2021-03-08 2022-12-13 Kla Corporation Multi-field scanning overlay metrology
US11841621B2 (en) 2021-10-29 2023-12-12 KLA Corporation CA Moiré scatterometry overlay
US11796925B2 (en) 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US20240068804A1 (en) 2022-08-23 2024-02-29 Kla Corporation Multi-pitch grid overlay target for scanning overlay metrology
US12669327B2 (en) 2022-11-23 2026-06-30 Kla Corporation System and method for suppression of tool induced shift in scanning overlay metrology
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US20240302751A1 (en) 2023-03-09 2024-09-12 Kla Corporation Multi-overlay stacked grating metrology target
US12704790B2 (en) 2023-04-04 2026-08-11 Kla Corporation System and method for determining overlay measurement of a scanning target

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015099145A (ja) * 2013-10-17 2015-05-28 国立大学法人金沢大学 回折環分析方法および回折環分析装置
JP2015184092A (ja) * 2014-03-24 2015-10-22 桑原　章二 Ｘ線分析装置
JP2019523874A (ja) * 2016-06-11 2019-08-29 ケーエルエー コーポレイション 同時多角度分光法
US20210364279A1 (en) * 2020-05-22 2021-11-25 Kla Corporation Measurement Modes for Overlay

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