JP2025500209A5 - - Google Patents

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Publication number
JP2025500209A5
JP2025500209A5 JP2024535618A JP2024535618A JP2025500209A5 JP 2025500209 A5 JP2025500209 A5 JP 2025500209A5 JP 2024535618 A JP2024535618 A JP 2024535618A JP 2024535618 A JP2024535618 A JP 2024535618A JP 2025500209 A5 JP2025500209 A5 JP 2025500209A5
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JP
Japan
Prior art keywords
optionally substituted
methyl
chloride
silyl
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024535618A
Other languages
English (en)
Japanese (ja)
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JP2025500209A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2022/081845 external-priority patent/WO2023115023A1/en
Publication of JP2025500209A publication Critical patent/JP2025500209A/ja
Publication of JP2025500209A5 publication Critical patent/JP2025500209A5/ja
Pending legal-status Critical Current

Links

JP2024535618A 2021-12-16 2022-12-16 高吸収金属含有フォトレジストに対する現像戦略 Pending JP2025500209A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163265558P 2021-12-16 2021-12-16
US63/265,558 2021-12-16
PCT/US2022/081845 WO2023115023A1 (en) 2021-12-16 2022-12-16 Development strategy for high-absorbing metal-containing photoresists

Publications (2)

Publication Number Publication Date
JP2025500209A JP2025500209A (ja) 2025-01-09
JP2025500209A5 true JP2025500209A5 (enExample) 2025-12-19

Family

ID=86773643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024535618A Pending JP2025500209A (ja) 2021-12-16 2022-12-16 高吸収金属含有フォトレジストに対する現像戦略

Country Status (5)

Country Link
US (1) US20250060673A1 (enExample)
JP (1) JP2025500209A (enExample)
KR (1) KR20240114785A (enExample)
TW (1) TW202340879A (enExample)
WO (1) WO2023115023A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
EP4078292A4 (en) 2020-07-07 2023-11-22 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US20230107357A1 (en) 2020-11-13 2023-04-06 Lam Research Corporation Process tool for dry removal of photoresist
JP7681106B2 (ja) 2020-12-08 2025-05-21 ラム リサーチ コーポレーション 有機蒸気によるフォトレジストの現像
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
JP7811164B2 (ja) * 2022-08-26 2026-02-04 三菱ケミカル株式会社 パターン基板の製造方法および半導体デバイスの製造方法
US12604710B2 (en) * 2022-09-21 2026-04-14 Tokyo Electron Limited Method and apparatus for in-situ dry development
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber
JP7852072B2 (ja) 2023-07-27 2026-04-27 ラム リサーチ コーポレーション 金属含有フォトレジストのためのオールインワン乾式現像
FI20236200A1 (en) * 2023-10-27 2025-04-28 Pibond Oy Solution-processable organometallic complexes and their use
US20250180987A1 (en) * 2023-12-01 2025-06-05 Applied Materials, Inc. Dry development for metal-oxide photo resists
US20250201559A1 (en) * 2023-12-18 2025-06-19 International Business Machines Corporation Semiconductor pattern structure preservation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160041471A1 (en) * 2014-08-07 2016-02-11 International Business Machines Corporation Acidified conductive water for developer residue removal
JP6742748B2 (ja) * 2016-02-17 2020-08-19 株式会社Screenホールディングス 現像ユニット、基板処理装置、現像方法および基板処理方法
WO2021067632A2 (en) * 2019-10-02 2021-04-08 Lam Research Corporation Substrate surface modification with high euv absorbers for high performance euv photoresists
EP4115242A4 (en) * 2020-03-02 2024-03-13 Inpria Corporation PROCESSING ENVIRONMENT FOR THE FORMATION OF INORGANIC RESERVE PATTERNS
US11705332B2 (en) * 2020-03-30 2023-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist layer surface treatment, cap layer, and method of forming photoresist pattern

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