JP2024166930A - 光電変換装置、該光電変換装置を用いるシステム - Google Patents

光電変換装置、該光電変換装置を用いるシステム Download PDF

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Publication number
JP2024166930A
JP2024166930A JP2023083367A JP2023083367A JP2024166930A JP 2024166930 A JP2024166930 A JP 2024166930A JP 2023083367 A JP2023083367 A JP 2023083367A JP 2023083367 A JP2023083367 A JP 2023083367A JP 2024166930 A JP2024166930 A JP 2024166930A
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JP
Japan
Prior art keywords
photoelectric conversion
conversion device
region
semiconductor substrate
pixel
Prior art date
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Pending
Application number
JP2023083367A
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English (en)
Japanese (ja)
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JP2024166930A5 (enExample
Inventor
アイマン アブデルガファ
Abdelghafar Aymantarek
和浩 森本
Kazuhiro Morimoto
寛 関根
Hiroshi Sekine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2023083367A priority Critical patent/JP2024166930A/ja
Priority to US18/666,565 priority patent/US20240387598A1/en
Publication of JP2024166930A publication Critical patent/JP2024166930A/ja
Publication of JP2024166930A5 publication Critical patent/JP2024166930A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2023083367A 2023-05-19 2023-05-19 光電変換装置、該光電変換装置を用いるシステム Pending JP2024166930A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023083367A JP2024166930A (ja) 2023-05-19 2023-05-19 光電変換装置、該光電変換装置を用いるシステム
US18/666,565 US20240387598A1 (en) 2023-05-19 2024-05-16 Photoelectric conversion device, system using photoelectric conversion device, and moving body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023083367A JP2024166930A (ja) 2023-05-19 2023-05-19 光電変換装置、該光電変換装置を用いるシステム

Publications (2)

Publication Number Publication Date
JP2024166930A true JP2024166930A (ja) 2024-11-29
JP2024166930A5 JP2024166930A5 (enExample) 2026-05-20

Family

ID=93463589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023083367A Pending JP2024166930A (ja) 2023-05-19 2023-05-19 光電変換装置、該光電変換装置を用いるシステム

Country Status (2)

Country Link
US (1) US20240387598A1 (enExample)
JP (1) JP2024166930A (enExample)

Also Published As

Publication number Publication date
US20240387598A1 (en) 2024-11-21

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