JP2024145744A - 半導体装置及び半導体装置の作製方法 - Google Patents

半導体装置及び半導体装置の作製方法 Download PDF

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Publication number
JP2024145744A
JP2024145744A JP2023058228A JP2023058228A JP2024145744A JP 2024145744 A JP2024145744 A JP 2024145744A JP 2023058228 A JP2023058228 A JP 2023058228A JP 2023058228 A JP2023058228 A JP 2023058228A JP 2024145744 A JP2024145744 A JP 2024145744A
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Japan
Prior art keywords
oxide semiconductor
layer
semiconductor layer
semiconductor device
etching
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Pending
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JP2023058228A
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English (en)
Japanese (ja)
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JP2024145744A5 (https=
Inventor
真里奈 望月
Marina Mochizuki
将弘 渡部
Masahiro Watabe
将志 津吹
Masashi Tsubuki
創 渡壁
So Watakabe
俊成 佐々木
Toshinari Sasaki
尊也 田丸
Takaya Tamaru
涼 小野寺
Ryo Onodera
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Japan Display Inc
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Japan Display Inc
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Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to JP2023058228A priority Critical patent/JP2024145744A/ja
Priority to DE102024202026.5A priority patent/DE102024202026A1/de
Priority to TW113108275A priority patent/TWI915754B/zh
Priority to US18/604,840 priority patent/US20240332427A1/en
Priority to KR1020240035649A priority patent/KR102947069B1/ko
Priority to CN202410326788.9A priority patent/CN118738138A/zh
Publication of JP2024145744A publication Critical patent/JP2024145744A/ja
Publication of JP2024145744A5 publication Critical patent/JP2024145744A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/70—Chemical treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2023058228A 2023-03-31 2023-03-31 半導体装置及び半導体装置の作製方法 Pending JP2024145744A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2023058228A JP2024145744A (ja) 2023-03-31 2023-03-31 半導体装置及び半導体装置の作製方法
DE102024202026.5A DE102024202026A1 (de) 2023-03-31 2024-03-05 Halbleitervorrichtung und verfahren zum herstellen einer halbleitervorrichtung
TW113108275A TWI915754B (zh) 2023-03-31 2024-03-07 半導體裝置及半導體裝置之製作方法
US18/604,840 US20240332427A1 (en) 2023-03-31 2024-03-14 Semiconductor device and method of manufacturing semiconductor device
KR1020240035649A KR102947069B1 (ko) 2023-03-31 2024-03-14 반도체 장치 및 반도체 장치의 제작 방법
CN202410326788.9A CN118738138A (zh) 2023-03-31 2024-03-21 半导体装置及半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023058228A JP2024145744A (ja) 2023-03-31 2023-03-31 半導体装置及び半導体装置の作製方法

Publications (2)

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JP2024145744A true JP2024145744A (ja) 2024-10-15
JP2024145744A5 JP2024145744A5 (https=) 2026-04-06

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ID=92712874

Family Applications (1)

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JP2023058228A Pending JP2024145744A (ja) 2023-03-31 2023-03-31 半導体装置及び半導体装置の作製方法

Country Status (5)

Country Link
US (1) US20240332427A1 (https=)
JP (1) JP2024145744A (https=)
KR (1) KR102947069B1 (https=)
CN (1) CN118738138A (https=)
DE (1) DE102024202026A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
SG11201505225TA (en) 2012-08-03 2015-08-28 Semiconductor Energy Lab Oxide semiconductor stacked film and semiconductor device
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2017137869A1 (en) 2016-02-12 2017-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device

Also Published As

Publication number Publication date
TW202441797A (zh) 2024-10-16
US20240332427A1 (en) 2024-10-03
DE102024202026A1 (de) 2024-10-02
KR20240147486A (ko) 2024-10-08
KR102947069B1 (ko) 2026-04-03
CN118738138A (zh) 2024-10-01

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