JP2024067026A - Substrate Processing Equipment - Google Patents

Abstract

A substrate processing apparatus capable of improving temperature deviation is provided.
[Solution] The substrate processing apparatus performs heat treatment on a large number of substrates, and includes a process chamber 100 in which a plurality of substrates 1 are arranged spaced apart from one another along a vertical direction to form a processing space in which they are processed, a plurality of first heater sections 200 arranged parallel to one another in a horizontal first direction in the processing space corresponding to some of the plurality of substrates 1, a plurality of second heater sections 300 arranged parallel to one another in a horizontal second direction intersecting the first direction in the processing space corresponding to the remaining portions of the plurality of substrates 1, and auxiliary heater sections 400 each provided at a position adjacent to both side surfaces of the process chamber in the processing space so as to be parallel to the second heater section.
[Selected figure] Figure 2

Description

The present invention relates to a substrate processing apparatus, and more specifically to a substrate processing apparatus that performs heat treatment on a large number of substrates.

Generally, a substrate processing apparatus is an apparatus that performs substrate processing such as deposition, etching, and heat treatment on a substrate using a process gas and an atmosphere at an appropriate temperature in an enclosed processing space formed by a process chamber.

In particular, heat treatments are performed to improve thin film properties such as crystallization and phase change for certain thin films deposited on substrates such as silicon wafers and glass for semiconductor, flat panel display and solar cell manufacturing.

Typical heat treatment processes include LTPS (low temperature polycrystalline silicon), which forms TFTs (thin film transistors) using polycrystalline silicon on a glass substrate to manufacture high-quality displays such as AMOLEDs (active matrix organic light emitting diodes), and the process of forming and curing polyimide on a substrate to form a flexible substrate.

The heat treatment process may also include a process of crystallizing the amorphous silicon deposited on the substrate with polysilicon when manufacturing a liquid crystal display or a thin-film crystalline silicon solar cell.

Conventional substrate processing equipment heats a large number of substrates that are introduced vertically via a large number of rod heaters that are arranged parallel to the process gas injection direction in the processing space.

On the other hand, in recent years, as substrates have become larger, the flow rate of the injected process gas has also increased significantly, causing serious problems with temperature deviations, particularly in the area at the bottom where the relatively low-temperature process gas descends and reduces temperature uniformity.

More specifically, the lowest part of the processing space is adjacent to the inner wall, where relatively low-temperature process gas descends, causing significant heat loss, and there is no temperature compensation compared to the upper part, where temperature compensation is properly performed through the rising hot air current, resulting in serious temperature deviations depending on the position.

In particular, at the bottom of the processing space, where a long rod heater is installed, temperature deviations occur in the process gas injection direction, so control is required for each position along the process gas flow direction, i.e., the longitudinal direction of the rod heater. However, control for each position along the longitudinal direction of the same rod heater is not possible, which creates a problem in that it is not possible to improve temperature uniformity.

In other words, in conventional substrate processing apparatuses, as shown in FIG. 1, a process gas flow is formed in the same direction as the longitudinal direction of the rod heater installed in the chamber 10. Here, the process gas flow caused by the temperature difference between the top and bottom is added, and temperature deviations occur at each position in the longitudinal direction of the rod heater. However, there is a problem that the temperature control for each longitudinal direction of the rod heater is not possible, and the temperature deviations become more severe.

The object of the present invention is to provide a substrate processing apparatus capable of improving temperature deviation in order to solve the above-mentioned problems.

The present invention has been invented to achieve the above-mentioned object of the present invention, and discloses a substrate processing apparatus including a process chamber forming a processing space in which a plurality of substrates are disposed vertically and spaced apart from one another and processed, a plurality of first heater units disposed in parallel to one another in a horizontal first direction in the processing space corresponding to some of the plurality of substrates, and a plurality of second heater units disposed in parallel to one another in a horizontal second direction intersecting the first direction in the processing space corresponding to the remaining portions of the plurality of substrates.

The second heater section may be disposed below the first heater section.

The first heater section may be arranged in multiple units corresponding to each of the portions of the substrate arranged in the vertical direction.

The second heater section may be disposed under the bottom substrate of the plurality of substrates.

The first direction and the second direction may be perpendicular to each other.

The second heater sections may be spaced apart at equal intervals in the first direction.

The first heater section may be provided across both sides of the process chamber.

The second heater section may be disposed across the front and rear sides of the process chamber.

The process chamber may include a heater support member disposed on the bottom surface thereof and supporting the second heater section.

The second heater section may have one end penetrating the rear surface of the process chamber and the other end spaced apart from the front surface.

The process chamber may have an opening formed at the front for introducing the substrate, and the second heater section may have one end penetrating the rear surface of the process chamber and the other end penetrating the front surface of the process chamber below the opening.

The processing space may further include auxiliary heater units disposed adjacent to both sides of the process chamber and parallel to the second heater unit.

The second heater section may be disposed between the auxiliary heater sections disposed on both inner sides of the process chamber.

The first distance between the auxiliary heater section and the second heater section may be greater than the second distance between the second heater sections.

The processing space may include a gas supply unit provided on one side wall of the processing chamber and configured to inject a process gas in the first direction, and a gas exhaust unit provided on the other side wall of the processing chamber and configured to exhaust the process gas from within the processing space.

The control unit controls the heat generation amount of each of the plurality of second heater sections independently, and the control unit can control the heat generation amount of at least some of the plurality of second heater sections so that they are different from each other relative to the rest.

The second heater units may be formed in a first control group, a second control group, a third control group, and a fourth control group, each of which is independently controlled via the control unit, in sequence from one side wall side to the other side wall side of the process chamber.

The control unit can control the heat generation amount of the second control group to be greater than the heat generation amount of the first control group.

The control unit can control the heat generation amount of the fourth control group to be greater than the heat generation amount of the first control group.

The control unit can control the heat generation amount of the second control group and the fourth control group to be greater than the heat generation amount of the first control group and the third control group.

The substrate processing apparatus according to the present invention has the advantage of being able to improve the temperature deviation at the bottommost part of the processing space.

In particular, the substrate processing apparatus according to the present invention has the advantage that it is possible to control the temperature at each position in the process gas injection direction at the bottom side of the processing space, thereby improving temperature uniformity.

The substrate processing apparatus according to the present invention also has the advantage that the heater can be freely set in the process gas injection direction and its perpendicular direction according to the temperature distribution at the lowest part of the processing space.

1 is a diagram showing an internal temperature distribution of a conventional substrate processing apparatus, in which a brighter color indicates a lower temperature and a darker color indicates a higher temperature. 1 is a perspective view showing a substrate processing apparatus according to the present invention; 2 is a cross-sectional view showing an internal state of the substrate processing apparatus shown in FIG. 1; 2 is a rear view showing the rear state of the substrate processing apparatus shown in FIG. 1; 2 is a diagram showing the arrangement of a first heater unit, a second heater unit and an auxiliary heater unit in the substrate processing apparatus shown in FIG. 1; 2 is a plan view showing an arrangement of a first heater unit and an auxiliary heater unit on an upper side of the substrate processing apparatus shown in FIG. 1; FIG. 2 is a plan view showing an arrangement of a second heater unit and an auxiliary heater unit on the lowermost side of the substrate processing apparatus shown in FIG. 1 . 11A and 11B are diagrams showing temperature distributions on a plane in an area corresponding to a bottom substrate in a conventional substrate processing apparatus and a substrate processing apparatus according to the present invention;

The substrate processing apparatus according to the present invention will be described below with reference to the attached drawings.

As shown in FIG. 2, the substrate processing plant according to the present invention includes a process chamber 100 that forms a processing space in which a plurality of substrates 1 are disposed vertically and spaced apart from one another, a plurality of first heater units 200 that are disposed parallel to one another in a horizontal first direction in the processing space corresponding to a portion of the plurality of substrates 1, and a plurality of second heater units 300 that are disposed parallel to one another in a horizontal second direction intersecting the first direction below the first heater units 200 in the processing space corresponding to the remaining portion of the plurality of substrates 1.

In addition, the substrate processing apparatus according to the present invention further includes a substrate support section that supports a plurality of substrates 1 arranged in the processing space at a distance from each other along the vertical direction.

The substrate processing apparatus according to the present invention further includes auxiliary heater units 400 that are installed in parallel with the second heater unit 300 at positions adjacent to both sides of the process chamber 100 in the processing space.

In addition, the substrate processing apparatus according to the present invention further includes a gas supply unit 500 provided on one side wall of the process chamber 100 and configured to inject a process gas in a first direction, and a gas exhaust unit 600 provided on the other side wall of the process chamber 100 and configured to exhaust the process gas from within the processing space.

The substrate processing apparatus according to the present invention further includes a heater support member 700 that is provided on the bottom surface of the process chamber 100 and supports the second heater section 300.

The substrate processing apparatus according to the present invention also includes a control unit that independently controls the heat generation amount of each of the multiple second heater units 300.

Here, the process gas according to the present invention is a general term for gases used in a heat treatment process for substrate processing, and more specifically, can also refer to various fumes that may be generated during the process and purge gases for discharging organic matter produced through the fumes.

The substrate 1 to be processed according to the present invention can be understood to include all substrates such as substrates used in display devices such as LEDs and LCDs, semiconductor substrates, solar cell substrates, etc., and in particular can refer to flexible substrates used in flexible display devices.

Meanwhile, the substrate processing process of the substrate processing apparatus according to the present invention can be understood to include a deposition process, an etching process, a heat treatment process, etc., and in particular can include a series of processes such as forming a flexible substrate on a non-flexible substrate, forming a pattern on the flexible substrate, separating the flexible substrate, and a process of heat treating and drying the flexible substrate.

For ease of explanation, in FIG. 1, a single substrate 1 is shown mounted on multiple substrate support parts. However, more preferably, multiple substrates 1 may be loaded and processed in correspondence with multiple substrate support parts.

The process chamber 100 may be configured to form a processing space in which multiple substrates 1 are processed.

For example, the process chamber 100 may include a chamber body 110 having an approximately hexahedral shape that forms an enclosed processing space therein, and a reinforcing rib 120 provided on the outer surface of the chamber body 110 to reinforce the chamber body 110.

The chamber body 110 can be made of at least one of quartz, stainless steel, aluminum, graphite, silicon carbide, or aluminum oxide.

Meanwhile, the chamber body 110 may be a hexahedron, with an opening 101 formed on the front side through which the substrate 1 is loaded and unloaded, side walls facing each other formed on the sides adjacent to the opening 101, and a rear surface formed on the side facing the entrance and exit.

In addition, as shown in FIG. 4, the chamber body 110 may have a rear opening 102 formed on the rear side for access required for maintenance of the processing space, and the rear opening 102 may be opened and closed through a separate door.

Thus, the sidewall and side surface referred to in this specification refer to surfaces adjacent to and facing each other on the front surface on which the opening 101 is formed, and the front surface and rear surface refer to the surfaces on which the opening 101 and rear opening 102 are formed, respectively.

Meanwhile, the process chamber 100 is provided with an opening/closing door (not shown) for opening and closing the opening 101, and the opening/closing door is provided on the outside of the front surface where the opening 101 is formed, so that it can slide back and forth, left and right, or up and down, and can open and close the entrance.

The chamber body 110 also has a plurality of through holes formed in the sidewall, through which part of the gas supply section 500 and the gas exhaust section 600 described below are provided, and further, the first heater section 200 can be provided inside the processing space by penetrating the through holes.

Of course, the through holes can also be partially formed on the front and rear sides of the process chamber 100 for the installation of the second heater section 300 and the auxiliary heater section 400 described below.

In this case, a sealing means may be further provided around the through hole to prevent leakage of the substrate processing gas and to form the processing space into a sealed space.

The reinforcing rib 120 may be provided on the outer surface of the chamber body 110 to reinforce the chamber body 110.

For example, the reinforcing ribs 120 can be provided on the outer surface of the chamber body 110, more specifically, on the outer side of the top and bottom surfaces and side walls, to improve durability in case the chamber body 110 is subjected to strong pressure or high temperature inside during processing, which may cause damage or deformation.

The substrate support may be arranged in the processing space and configured to support multiple substrates 1 so that they are spaced apart from one another in the vertical direction.

In particular, the substrate support portion can be installed in the processing space to support the substrates 1 at regular intervals in the vertical direction so that the substrates 1 are supported so as to be spaced apart from one another along the vertical direction.

The gas supply unit 500 is installed on one side wall of the process chamber 100 and is configured to inject process gas in a first direction, and can be configured in a variety of ways.

At this time, the gas supply unit 500 may include a plurality of injection nozzles to inject process gas corresponding to the substrates 1 arranged vertically apart from each other in the processing space.

The injection nozzles may be installed through one side wall of the process chamber 100, and multiple nozzles may be arranged at regular intervals on the same horizontal plane.

The gas exhaust section 600 is provided on the other side wall of the process chamber 100 and is configured to exhaust the process gas within the processing space, and various configurations are possible.

In this case, the gas exhaust unit 600 may include exhaust ports arranged opposite the injection nozzles of the gas supply unit 500 in correspondence with the substrates 1 arranged vertically spaced apart from one another in the processing space.

The exhaust ports may be provided by penetrating the other side wall of the process chamber 100 or may be formed as through-holes formed in the process chamber 100, and may be arranged at regular intervals from each other and multiple ports may be arranged on the same horizontal plane.

Meanwhile, the first and second directions and the installation directions of each component described below are as follows:

The first direction is the direction in which the first heater section 200 is provided, refers to the longitudinal direction of the first heater section 200, and refers to the X-axis direction in the drawing.

The second direction is a direction intersecting the first direction, a longitudinal direction of the second heater section 300 in which the second heater section 300 is provided, and means the Y-axis direction in the drawing.

For example, the first direction and the second direction may both mean a horizontal direction, and the first direction and the second direction may be perpendicular to each other.

That is, the first direction is the direction in which the gas supply unit 500 of the process chamber 100 is installed and the process gas is injected, and may be a direction from one side wall of the process chamber 100 to the other side wall, and the second direction is a direction perpendicular to the same plane as the process gas injection and airflow direction in the processing space, and means a direction from the front side to the rear side of the process chamber 100.

The first heater section 200 is configured to be arranged in parallel to each other in a first direction horizontal to the processing space in correspondence with a portion of the plurality of substrates 1, and various configurations are possible.

In this case, the first heater section 200 is a rod heater, and may be configured to generate heat by wrapping a heating wire around a heater tube having a length, and all heater shapes having a length disclosed in the past are applicable.

On the other hand, as shown in Figures 3 and 5, the first heater unit 200 can be arranged in multiple units parallel to each other on the same imaginary horizontal plane corresponding to the substrate 1, and multiple units can be arranged in each unit corresponding to a portion of the substrate 1 arranged in the vertical direction.

The first heater sections 200 may be arranged parallel to each other, and the spacing between adjacent first heater sections 200 on the same horizontal plane may be the same.

The first heater unit 200 may be installed across both sides of the process chamber 100, and more specifically, may be installed to have a length in the direction from one side wall of the process chamber 100 where the gas supply unit 500 is installed to the other side wall of the process chamber 100 where the gas exhaust unit 600 is installed, which is the process gas injection direction described above.

In this case, the second heater section 300 is a rod heater like the first heater section 200 described above, and may be configured to generate heat by wrapping a heating wire around a heater tube having a length, and all heater shapes having a length disclosed in the past are applicable.

The second heater section 300 may be configured to be arranged in parallel to each other in a horizontal second direction intersecting the first direction below the first heater section 200 in the processing space corresponding to the remaining portion of the plurality of substrates 1.

In this case, the second heater unit 300 can be disposed below the first heater unit 200, and in particular, a plurality of second heater units 300 can be disposed on a single imaginary horizontal plane below the substrate 1 located at the bottom of the plurality of substrates 1.

In addition, the second heater sections 300 may be spaced apart from each other at equal intervals in the first direction, and more specifically, the intervals between adjacent second heater sections 300 may all be the same.

As another example, the spacing between the second heater units 300 may vary depending on the position in the processing space.

The second heater section 300 may be installed across the front and rear sides of the process chamber 100, and may be installed to have a length in a second direction perpendicular to the first direction.

In this case, the second heater unit 300 may be provided so that one end penetrates the rear surface of the process chamber 100 and the other end penetrates the front surface of the process chamber 100.

In this case, the second heater section 300 can be installed by penetrating through the lower part of the rear opening 102 formed on the rear side of the process chamber 100 at one end, without interfering with the rear opening 102, and by penetrating through the lower part of the opening 101 on the front side of the process chamber 100 at the other end, it can be installed by penetrating through the opening 101 without interfering with it.

Meanwhile, as another example, the second heater section 300 may be positioned so that the other end interferes with the opening 101, or one end may be disposed so that it penetrates the rear surface of the process chamber 100 and the other end is spaced apart from the front inner surface.

As another example, the substrate processing apparatus according to the present invention may include a heater support member 700 that is provided on the bottom surface of the process chamber 100 and supports the second heater section 300, as shown in FIG. 3, and the second heater section 300 may be supported via the heater support member 700.

In this case, a plurality of heater support members 700 may be provided along the longitudinal direction of the second heater section 300 to support the second heater section 300. As another example, one end of the second heater section 300 may be provided penetrating the rear surface of the process chamber 100, and the heater support member 700 may be provided at the other end to support the second heater section 300.

Meanwhile, the heater support member 700 has a mounting groove formed on the upper surface corresponding to the second heater unit 300, and can support the second heater unit 300.

The second heater section 300 is disposed between the auxiliary heater sections 400 described below, and more specifically, can be disposed between the auxiliary heater sections 400 that are provided adjacent to both inner sides of the process chamber 100 and have a length in the second direction.

In this case, the first distance d1 between the auxiliary heater unit 400 and the second heater unit 300 can be set to be greater than the second distance d2 between the second heater units 300.

As shown in FIG. 3, the auxiliary heater units 400 are arranged in parallel with the second heater unit 300 at positions adjacent to both sides of the process chamber 100 in the processing space, and various configurations are possible.

For example, the auxiliary heater unit 400 can be arranged in parallel to each other vertically at positions adjacent to both inner sides of the process chamber 100, and can be provided with a length in the second direction to perform temperature compensation for both sides of the process chamber 100 where heat loss is large.

That is, the auxiliary heater unit 400 can be installed to have a length in the second direction at an adjacent position for temperature compensation on both inner sides of the process chamber 100, which are difficult to compensate for despite high heat loss due to the first heater unit 200 installed to have a length in the first direction.

The control unit is configured to independently control the heat generation amount of each of the multiple second heater units 300, and various configurations are possible.

At this time, the control unit can of course control the temperature through the heat generation of not only the multiple second heater units 300 but also the first heater unit 200 and the auxiliary control unit 400.

The control unit can control the heat generation amount of at least some of the multiple second heater units 300 to be different from the rest, for example, can set a high heat generation amount for some and a low heat generation amount for the rest depending on the position of the multiple second heater units 300 in the processing space.

For this reason, the second heater section 300 is the smallest unit whose heat generation amount is controlled via the control section, and the first control group 310, the second control group 320, the third control group 330, and the fourth control group 340, each of which is independently controlled via the control section, can be formed sequentially from one side wall side to the other side wall side of the process chamber 100.

To explain the control of the second heater unit 300 via the control unit, the temperature change at the bottom of the processing space will be described as follows.

As shown in Figures 1 and 8A, at the bottom of the processing space, i.e., below the bottommost substrate 1, as the process gas, which is at a relatively low temperature at the top, moves horizontally in the first direction and descends, the temperature of the area corresponding to the first control group 310 into which the process gas is currently flowing may be relatively high, and the temperature of the area corresponding to the second control group 320 may be relatively low.

In addition, the temperature of the area corresponding to the third control group 330 can be made higher than the temperature of the area corresponding to the second control group 320 by the temperature exchange of the process gas by the first heater section 200 and the second heater section 300.

However, because the process chamber 100 has a large heat loss and the exhaust port is located there, the temperature of the area corresponding to the fourth control group 340 adjacent to the other side wall may be lower than the temperature of the area corresponding to the third control group 330.

As a result, as shown in FIG. 8A, the temperature of the areas corresponding to the first control group 310 and the third control group 330 is relatively high, and the temperature of the areas corresponding to the second control group 320 and the fourth control group 340 is relatively low, and temperature deviations at each position in the first direction may occur.

Therefore, the control unit can control the heat generation amount of the second control group 320 to be greater than the heat generation amount of the first control group 310, and as another example, the control unit can control the heat generation amount of the fourth control group 340 to be greater than the heat generation amount of the first control group 310.

Furthermore, the control unit can also control the heat generation amount of the second control group 320 and the fourth control group 340 to be greater than the heat generation amount of the first control group 310 and the third control group 330.

On the other hand, as an example different from the above, the number of second heater units 300 included in the second control group 320 and the fourth control group 340 can be made greater than the number of second heater units 300 included in the first control group 310 and the third control group 330, so that the temperature of the areas corresponding to the second control group 320 and the fourth control group 340 can be made higher even when the same amount of heat is controlled by the same power.

As a result, it can be seen that the substrate processing apparatus according to the present invention has an improved temperature deviation in the first direction, as shown in FIG. 8B, compared to the conventional substrate processing apparatus, as shown in FIG. 8A.

In this case, in Figures 8A and 8B, the darker the area, the higher the temperature, and the brighter the area, the lower the temperature.

The above is merely an explanation of some of the preferred embodiments that can be implemented by the present invention, and as is well known, the scope of the present invention should not be interpreted as being limited to the above-mentioned embodiments, and the above-mentioned technical ideas of the present invention and the technical ideas that form the basis of the present invention are all included in the scope of the present invention.

100 Process chamber 200 First heater section 300 Second heater section 400 Auxiliary heater section

Claims (20)

a process chamber defining a processing space in which a plurality of substrates are disposed vertically spaced apart from one another and processed;
a first heater portion arranged in parallel to one another in a first direction horizontal to the processing space in correspondence with some of the substrates;
a plurality of second heater units arranged in parallel to each other in a horizontal second direction intersecting the first direction in the processing space corresponding to a remaining portion of the plurality of substrates;
A substrate processing apparatus comprising: The second heater section includes:
2. The substrate processing apparatus according to claim 1, wherein the heater unit is disposed below the first heater unit. The first heater section includes:
2. The substrate processing apparatus according to claim 1, wherein a plurality of the substrate processing units are arranged corresponding to each of the portions of the substrate arranged in the vertical direction. The second heater section includes:
2. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is disposed below a substrate located at a lowermost stage of the plurality of substrates. The substrate processing apparatus of claim 1, wherein the first direction and the second direction are perpendicular to each other. The second heater section includes:
The substrate processing apparatus according to claim 5 , wherein the substrates are spaced apart from each other at equal intervals in the first direction. The first heater section includes:
The substrate processing apparatus according to claim 1 , wherein the processing chamber is provided with a plurality of nozzles extending across both sides of the processing chamber. The second heater section includes:
2. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is provided across the front and rear surfaces of the process chamber. The substrate processing apparatus according to claim 1, further comprising a heater support member provided on the bottom surface of the process chamber and supporting the second heater unit. The second heater section includes:
10. The substrate processing apparatus according to claim 9, wherein one end of the processing chamber is provided so as to penetrate a rear surface of the processing chamber, and the other end of the processing chamber is provided so as to be spaced apart from a front surface of the processing chamber. the process chamber has an opening formed in a front surface thereof for introducing the substrate;
2 . The substrate processing apparatus according to claim 1 , wherein the second heater portion has one end penetrating a rear surface of the process chamber and the other end penetrating a front surface of the process chamber below the opening. The substrate processing apparatus of claim 1, further comprising auxiliary heater units disposed in parallel to the second heater unit at positions adjacent to both sides of the process chamber in the processing space. The second heater section includes:
13. The substrate processing apparatus according to claim 12, wherein the auxiliary heater is disposed between the auxiliary heater portions disposed on both inner sides of the process chamber. The substrate processing apparatus of claim 12, wherein the first distance between the auxiliary heater section and the second heater section is greater than the second distance between the second heater sections. The substrate processing apparatus according to claim 1, further comprising: a gas supply unit provided on one side wall of the process chamber for injecting a process gas in the first direction; and a gas exhaust unit provided on the other side wall of the process chamber for exhausting the process gas from within the processing space. a control unit that independently controls the heat generation amount of each of the second heater units;
The substrate processing apparatus of claim 15 , wherein the control unit controls at least some of the second heater units so that the heat generation amounts of the at least some of the second heater units are different from each other with respect to the remaining second heater units. The plurality of second heater portions include
17. The substrate processing apparatus of claim 16, wherein a first control group, a second control group, a third control group, and a fourth control group, each of which is independently controlled by the controller, are formed sequentially from one side wall side to the other side wall side of the process chamber. The control unit is
18. The substrate processing apparatus according to claim 17, wherein the amount of heat generated by the second control group is controlled to be greater than the amount of heat generated by the first control group. The control unit is
18. The substrate processing apparatus according to claim 17, wherein the amount of heat generated by the fourth control group is controlled to be greater than the amount of heat generated by the first control group. The control unit is
18. The substrate processing apparatus according to claim 17, wherein the heat generation amounts of the second control group and the fourth control group are controlled to be greater than the heat generation amounts of the first control group and the third control group.