JP2024060298A - Scanning antenna and method for manufacturing the same - Google Patents

Abstract

[Problem] To provide a highly reliable scanning antenna. [Solution] The scanning antenna has a base material, an adhesive layer provided on the base material, an inorganic oxide wiring provided on the adhesive layer, and a metal wiring provided on the adhesive layer, at least a portion of which overlaps with the inorganic oxide wiring and is connected to the inorganic oxide wiring. [Selected Figure] Figure 2

Description

The present invention relates to a scanning antenna and a method for manufacturing a scanning antenna.

A phased array antenna, which is equipped with antenna units, is known as an antenna (scanning antenna) that has the function of changing the radiation direction of a beam. A phase shifter is required for a phased array antenna. Phase shifters using liquid crystal are being put into practical use to enable phased array antennas to be manufactured at low cost.

Patent Document 1 describes a scanning antenna equipped with a low-resistance metal electrode (wiring) and a high-resistance inorganic oxide electrode (wiring). Patent Document 2 discloses a technique for forming metal wiring that is suppressed from lifting or peeling by attaching a metal foil to a substrate via an adhesive and then etching the metal foil.

International Publication No. 2020/121876 JP 2007-048800 A

Based on the above prior art, the inventors have developed a scanning antenna having a thick, low-resistance metal wiring 130 attached to a substrate 110 via an adhesive layer 120, and a thin, high-resistance inorganic oxide wiring 140 formed on the upper side of the metal wiring 130 by sputtering or the like, as shown in FIG. 5.

The high-resistance inorganic oxide wiring used in the scanning antenna is vulnerable to low bending resistance due to the inorganic oxide material itself, and is also formed with a thin film thickness to increase resistance, making it more susceptible to breakage than thick metal wiring. Furthermore, if there is a large difference between the linear expansion coefficient of the adhesive layer that is bonded to both the metal wiring and the inorganic oxide wiring and the linear expansion coefficient of the inorganic oxide wiring, the heat generated during the manufacture of the scanning antenna will cause the adhesive layer and the inorganic oxide wiring to have different amounts of thermal expansion and thermal contraction. Therefore, the load on the part of the inorganic oxide wiring that comes into contact with both the metal wiring and the adhesive layer is likely to be large, and there is a risk of breakage in that part. This could cause the operation of the scanning antenna to become unstable.

In view of the above, the present invention aims to provide a highly reliable scanning antenna.

The scanning antenna of the first aspect of the present invention has a substrate, an adhesive layer provided on the substrate, an inorganic oxide wiring provided on the adhesive layer, and a metal wiring provided on the adhesive layer, at least a portion of which overlaps the inorganic oxide wiring and is connected to the inorganic oxide wiring.

The method for manufacturing a scanning antenna according to the second aspect of the present invention includes a metal foil forming step of forming a metal foil, an inorganic oxide layer forming step of forming an inorganic oxide layer on one side of the metal foil, an attachment step of placing the inorganic oxide layer opposite a substrate and attaching the metal foil to the substrate via an adhesive layer, a metal wiring forming step of patterning the metal foil to form metal wiring, and an inorganic oxide wiring forming step of patterning the inorganic oxide layer to form inorganic oxide wiring.

The present invention provides a highly reliable scanning antenna.

FIG. 1 is a schematic plan view showing a part of a scanning antenna according to an embodiment. FIG. 2 is a schematic cross-sectional view of the scanning antenna according to the embodiment. FIG. 3 is a schematic diagram showing each step of the manufacturing method of a scanning antenna of an embodiment, where FIG. 3(a) shows a metal foil forming step, FIG. 3(b) shows an inorganic oxide layer forming step, FIG. 3(c) shows a first step of the bonding step, FIG. 3(d) shows a second step of the bonding step, and FIG. 3(e) shows a metal wiring forming step. FIG. 4 shows a first step of the attachment process of the modified example. FIG. 5 is a schematic cross-sectional view of a conventional scanning antenna.

Hereinafter, a scanning antenna according to an embodiment of the present invention will be described with reference to the drawings.
Fig. 1 is a plan view showing a part of a scanning antenna 1 of the present embodiment, and Fig. 2 is a cross-sectional view of the scanning antenna 1 of the present embodiment.

Note that the scanning antenna 1 shown in Figures 1 and 2 shows only a part of the overall structure. The scanning antenna 1 as a whole forms an array structure in which multiple elements shown in Figure 1 are arranged.

<Scanning antenna>
The scanning antenna 1 includes a substrate 10, an adhesive layer 20 provided on the substrate 10, an inorganic oxide wiring 40 provided on the adhesive layer 20, and a metal wiring 30 provided on the adhesive layer 20 and at least a portion of which overlaps with the inorganic oxide wiring 40. The metal wiring 30 is connected to the inorganic oxide wiring 40.

In this specification, the various parts of the scanning antenna 1 and the manufacturing method are described with the direction in which the adhesive layer 20 is laminated on the substrate 10 being the upper side. However, the orientation of the scanning antenna 1 in this specification is merely an example, and the orientation of the scanning antenna 1 during use and during manufacturing are not limited to the orientation shown in this specification.

The substrate 10 is made of an insulating material. A typical material for the substrate 10 is glass, but flexibility can be imparted to the substrate 10 by using various plastic films. In this embodiment, the material for the substrate 10 is glass.

The adhesive layer 20 is provided on the substrate 10. The adhesive layer 20 is a layer formed from a known adhesive. Examples of the adhesive that constitutes the adhesive layer 20 include a polyurethane adhesive, a polyacrylic resin adhesive, and an adhesive made of a polyimide resin.

The inorganic oxide wiring 40 is provided on the adhesive layer 20. The inorganic oxide wiring 40 is formed in a predetermined pattern shape. In the scanning antenna 1, the inorganic oxide wiring 40 serves as a high resistance wiring.

The inorganic oxide wiring 40 is made of an inorganic oxide. In this embodiment, the inorganic oxide wiring 40 is made of indium tin oxide (ITO). Therefore, the linear expansion coefficient of the inorganic oxide wiring 40 of this embodiment is 7.2×10 ⁻⁶ /K. The inorganic oxide wiring 40 may be made of an inorganic oxide with high resistivity, such as indium zinc oxide (IZO).

From the viewpoint of achieving high resistance, it is desirable that the inorganic oxide wiring 40 is thin and narrow. The thickness of the inorganic oxide wiring 40 is, for example, 10 nm or more and 200 nm or less. The line width of the inorganic oxide wiring 40 is 5 μm or more and 10 μm or less. In this embodiment, the thickness of the inorganic oxide wiring 40 is 60 nm, and the line width is 8 μm.

The metal wiring 30 is provided on a portion of the adhesive layer 20. The metal wiring 30 is formed in a predetermined pattern shape. The metal wiring 30 is attached to the substrate 10 via the adhesive layer 20. In the scanning antenna 1, the metal wiring 30 serves as low-resistance wiring.

The metal wiring 30 is made of metal. In this embodiment, the metal wiring 30 is made of copper. Therefore, the linear expansion coefficient of the metal wiring 30 in this embodiment is 16.8×10 ⁻⁶ /K. The metal wiring 30 may be made of a metal with low resistivity, such as silver or aluminum. From the viewpoint of reducing resistance, it is desirable that the metal wiring 30 is a thick film. The thickness of the metal wiring 30 is, for example, 1 μm (1000 nm) or more and 30 μm or less. In this embodiment, the thickness of the metal wiring 30 is 2000 nm.

<Manufacturing method of scanning antenna>
3A to 3C are schematic diagrams showing the steps of a method for manufacturing the scanning antenna 1 of this embodiment.
An example of a method for manufacturing the scanning antenna 1 of this embodiment having the above-mentioned configuration will be described.
The method for manufacturing the scanning antenna 1 of this embodiment includes a metal foil forming step, an inorganic oxide layer forming step, a bonding step, a metal wiring forming step, and an inorganic oxide wiring forming step.

The metal foil forming process shown in FIG. 3(a) is a process for forming metal foil 30A. Metal foil 30A is a copper foil formed in a sheet shape. In the metal foil forming process of this embodiment, metal foil 30A having a thickness of 2000 nm is formed. In this embodiment, metal foil 30A is formed by electrolytic plating, but may also be formed by sputtering. Note that a base member (not shown) that serves as a base for film formation may be placed on the upper surface side of metal foil 30A. In this case, metal foil 30A is removed from the base member, for example, in the process of attaching it to substrate 10.

The inorganic oxide layer forming process shown in FIG. 3(b) is a process of forming an inorganic oxide layer 40A on one surface 30c of the metal foil 30A. In the inorganic oxide layer forming process, indium tin oxide (ITO) is laminated on the metal foil 30A by sputtering to form the inorganic oxide layer 40A. The sputtering power value in the inorganic oxide layer forming process of this embodiment is 5.6 kW. In addition, the conveying speed of the substrate 10 in the inorganic oxide layer forming process of this embodiment is 495 nm/sec. In the inorganic oxide layer forming process of this embodiment, an inorganic oxide layer 40A having a thickness of 60 nm is formed.

3(c) and (d) is a process in which the inorganic oxide layer 40A faces the substrate 10 and the metal foil 30A is attached to the substrate 10 via the adhesive layer 20. The attachment process of this embodiment includes a first step of applying an adhesive and a second step of laminating and attaching the metal foil 30A to the substrate 10.

As shown in FIG. 3(c), in the first step of the attachment process, a liquid adhesive is applied to the entire surface of the inorganic oxide layer 40A to form an adhesive layer 20. The adhesive layer 20 is formed on the surface of the inorganic oxide layer 40A by using a roll coating method. The method for applying the liquid adhesive may be a coating method such as a die coating method or a slit and spin coating method.

The first step of the attachment process may be a process of applying an adhesive to the surface of the substrate 10 to form an adhesive layer 20, as shown in a modified example in FIG. 4. Even in this case, the adhesive layer 20 is formed by, for example, a roll coating method, a die coating method, or a slit and spin coating method.

As shown in FIG. 3(d), in the second step of the lamination process, first, the adhesive layer 20 formed on the entire surface of the inorganic oxide layer 40A is brought into contact with the substrate 10, and then the metal foil 30A and the substrate 10 are pressed together at a predetermined pressure while the adhesive layer 20 is dried. This allows the metal foil 30A and the substrate 10 to be bonded together via the adhesive layer 20. Furthermore, by going through the lamination process, the inorganic oxide layer 40A is sandwiched between the metal foil 30A and the substrate 10.

3(e), the metal wiring forming step is a step of forming metal wiring by patterning the metal foil 30A. The patterning of the metal foil 30A is performed by photolithography.
In the metal wiring forming process, first, a photoresist layer is formed on the metal foil 30A. In this embodiment, a novolac resin, which is a positive photoresist, is used as the photoresist. The photoresist is applied onto the metal foil 30A by a general spin coater, and a photoresist layer is formed.
Next, the photoresist layer is dried. In this embodiment, the photoresist layer is dried by baking in a chamber under reduced pressure. This makes it possible to shorten the drying time of the photoresist layer. The air pressure in the chamber was 130 Pa. The baking temperature was 120° C. The baking time was 2 minutes.
Next, the photoresist layer is exposed to ultraviolet light through a photomask on which a pattern corresponding to the metal wiring 30 is drawn. In this embodiment, the exposure amount is set to 35 mJ.
Next, the photoresist layer after exposure is developed to remove unnecessary resist. A positive developer is used as the developer. A spray development method is used as the development method. The developer pressure is 0.1 MPa. The developer temperature is 25° C. The development time is 25 seconds.
Next, the metal foil 30A is etched to remove the portions of the metal foil 30A from which the photoresist layer has been removed, and the metal foil 30A is patterned into a pattern shape corresponding to the metal wiring 30. The etching solution was a mixed aqueous solution of hydrogen peroxide, sulfuric acid, and water. The concentration of the hydrogen peroxide was about 2% to 20%. The concentration of the sulfuric acid was about 2% to 20%. The liquid temperature of the etching solution was 40°C. The etching time was about 60 to 300 seconds.
Next, the photoresist layer remaining on the metal wiring 30 was stripped off. A silicate solution was used as the stripping solution. The temperature of the stripping solution was 40° C. The stripping time was 180 seconds.
Finally, post-baking is performed in a nitrogen atmosphere at a baking temperature of 250° C. for a baking time of 90 minutes.

In the metal wiring formation process, only the metal foil 30A is etched, and the inorganic oxide layer 40A is not etched. The inorganic oxide layer 40A is etched in the inorganic oxide wiring formation process that is performed after the metal wiring formation process. In this embodiment, by using different types of appropriate etching solutions for the metal wiring formation process and the inorganic oxide wiring formation process, it is possible to selectively etch different layers for each process.

The scanning antenna 1 shown in FIG. 2 can be formed by performing an inorganic oxide wiring formation process on the work-in-progress shown in FIG. 3(e). As shown in FIG. 2, the inorganic oxide wiring formation process is a process in which the inorganic oxide layer 40A is patterned to form the inorganic oxide wiring 40. The inorganic oxide layer 40A is patterned by photolithography.

In the inorganic oxide wiring forming process, the inorganic oxide layer 40A is patterned by photolithography. In the inorganic oxide wiring forming process, a photoresist layer is first formed on the inorganic oxide layer 40A. In this embodiment, a novolac resin, which is a positive photoresist, is used as the photoresist. The photoresist is applied onto the inorganic oxide layer 40A by a general spin coater, and a photoresist layer is formed.
Next, the photoresist layer is dried. In this embodiment, the photoresist layer is dried by baking in a chamber under reduced pressure. The pressure in the chamber is set to 130 Pa. The baking temperature is set to 120° C. The baking time is set to 2 minutes.
Next, the photoresist layer is exposed to ultraviolet light through a photomask on which a pattern corresponding to the inorganic oxide wiring 40 is drawn. In this embodiment, the exposure amount is set to 70 mJ.
Next, the photoresist layer after exposure is developed to remove unnecessary resist. A positive developer is used as the developer. A spray development method is used as the development method. The developer pressure is 0.15 MPa. The developer temperature is 25° C. The development time is 100 seconds.
Next, the inorganic oxide layer 40A is etched to remove the portion of the inorganic oxide layer 40A from which the photoresist layer has been removed, and patterned into a pattern shape corresponding to the inorganic oxide wiring 40. The etching solution was an aqueous solution of oxalic acid. The liquid temperature of the etching solution was 40° C. The etching time was 60 seconds.
Next, the photoresist layer remaining on the inorganic oxide wiring 40 is stripped off. A silicate solution is used as the stripping solution. The temperature of the stripping solution is 40° C. The stripping time is 180 seconds. When the stripping of the photoresist layer is completed, the inorganic oxide wiring 40 having a predetermined pattern shape is formed as shown in FIG.

<Applicable manufacturing processes>
In the above embodiment, the inorganic oxide wiring forming step is performed after the metal wiring forming step. However, the inorganic oxide wiring forming step may be performed after the inorganic oxide layer forming step (FIG. 3(b)) and before the bonding step (FIG. 3(c)). In this case, the inorganic oxide layer 40A can be etched from the opposite side of the metal foil 30A, so that the inorganic oxide wiring 40 can be freely patterned in the region between the metal wiring 30 and the adhesive layer 20.

<Summary>
The scanning antenna 1 of this embodiment has a substrate 10, an adhesive layer 20 provided on the substrate 10, an inorganic oxide wiring 40 provided on the adhesive layer 20, and a metal wiring 30 provided on the adhesive layer 20, at least a portion of which overlaps with the inorganic oxide wiring 40 and is connected to the inorganic oxide wiring 40.

According to this embodiment, the inorganic oxide wiring 40 is disposed between the metal wiring 30 and the adhesive layer 20. Therefore, the inorganic oxide wiring 40 does not have a step shape (see FIG. 5) that rides on the thick metal wiring 30, and can be formed in a substantially uniform shape over its entire length. In other words, the inorganic oxide wiring 40 of this embodiment is less likely to have parts where stress is likely to concentrate, and breaks in the inorganic oxide wiring 40 can be suppressed. Therefore, the reliability of the scanning antenna 1 can be improved.

According to this embodiment, the inorganic oxide wiring 40 is disposed between the metal wiring 30 and the adhesive layer 20. Therefore, the inorganic oxide wiring 40 is adhered and fixed to the adhesive layer 20, and is protected by the adhesive layer 20, making it difficult for damage to occur. In addition, since the metal wiring 30 and the adhesive layer 20 are firmly adhered and fixed around the inorganic oxide wiring 40, sufficient pressure is applied between the inorganic oxide wiring 40 and the metal wiring 30, and the connection between the inorganic oxide wiring 40 and the metal wiring 30 is stabilized. In addition, the interface between the inorganic oxide wiring 40 and the metal wiring 30 has a high affinity and is easily adhered, making it easy to stabilize the electrical connection between the inorganic oxide wiring 40 and the metal wiring 30.

In this embodiment, the line width of the inorganic oxide wiring 40 is set to 5 μm or more and 10 μm or less in order to increase the resistance. Therefore, the occupancy rate of the inorganic oxide wiring 40 at the interface between the metal wiring 30 and the adhesive layer 20 can be sufficiently reduced, and the inorganic oxide wiring 40 is unlikely to impede the adhesion between the metal wiring 30 and the adhesive layer 20.

In this embodiment, the inorganic oxide wiring 40 is in contact with the adhesive layer 20, so that the adhesive layer 20 can absorb the distortion of the inorganic oxide wiring 40. This can prevent the inorganic oxide wiring 40 from breaking, and can improve the reliability of the scanning antenna 1.

According to this embodiment, the metal wiring 30 is bonded to the substrate 10 via the adhesive layer 20. The internal stress of the metal wiring 30 formed in a thick film is large, and the adhesive strength between the metal wiring 30, which is made of metal, and the substrate 10 is small. Therefore, when the metal wiring 30 is directly provided on the substrate 10, the metal wiring 30 is likely to float and peel off from the substrate 10. In this embodiment, the metal wiring 30 is bonded to the substrate 10 via the adhesive layer 20 made of an adhesive that has high adhesiveness to both the metal wiring 30 and the substrate 10, so that the metal wiring 30 can be prevented from floating and peeling off from the substrate 10. Therefore, the reliability of the scanning antenna 1 can be improved.

In this embodiment, the linear expansion coefficient of the adhesive layer 20 is preferably sufficiently close to the linear expansion coefficient of the metal wiring 30 and the linear expansion coefficient of the inorganic oxide wiring 40. In this embodiment, the inorganic oxide wiring 40 is made of indium tin oxide (linear expansion coefficient 7.2×10 ⁻⁶ /K), and the metal wiring 30 is made of copper (linear expansion coefficient 16.8×10 ⁻⁶ /K). For this reason, it is preferable that the linear expansion coefficient of the adhesive layer 20 is 20×10 ⁻⁶ /K or less. In this case, the difference in the thermal expansion amount and the thermal contraction amount of the metal wiring 30, the inorganic oxide wiring 40, and the adhesive layer 20 can be reduced, so that the load applied to the inorganic oxide wiring 40 can be reduced and the inorganic oxide wiring 40 can be prevented from being broken. Here, "the metal wiring is made of copper" includes not only the case where the metal wiring 30 is pure copper, but also the case where the metal wiring 30 is a copper alloy mainly composed of copper.

Furthermore, from the viewpoint of reducing the difference between the amounts of thermal expansion and thermal contraction, it is more preferable that the linear expansion coefficient of the adhesive layer 20 is a value between the linear expansion coefficient of the metal wiring 30 and the linear expansion coefficient of the inorganic oxide wiring 40. That is, in this embodiment, it is more preferable that the linear expansion coefficient of the adhesive layer 20 is 7.2×10 ⁻⁶ /K or more and 16.8×10 ⁻⁶ /K or less.

The manufacturing method of the scanning antenna 1 of this embodiment includes a metal foil forming process for forming the metal foil 30A, an inorganic oxide layer forming process for forming an inorganic oxide layer 40A on one surface 30c of the metal foil 30A, an attachment process for placing the inorganic oxide layer 40A opposite the substrate 10 and attaching the metal foil 30A to the substrate 10 via an adhesive layer 20, a metal wiring forming process for patterning the metal foil 30A to form the metal wiring 30, and an inorganic oxide wiring forming process for patterning the inorganic oxide layer 40A to form the inorganic oxide wiring 40.

According to this embodiment, the inorganic oxide wiring 40 is directly formed on the metal foil 30A, so it is easy to increase the adhesion between the metal foil 30A and the inorganic oxide wiring 40. Therefore, the electrical connection between the inorganic oxide wiring 40 and the metal wiring 30 can be stabilized.

According to this embodiment, the metal wiring 30 is formed by patterning the metal foil 30A on which the inorganic oxide layer 40A is formed. Therefore, compared to the case where the inorganic oxide wiring 40 is formed on the metal wiring 30 as in the conventional technology of FIG. 5, it is possible to suppress the formation of stepped portions in the inorganic oxide wiring 40. As a result, it is difficult for portions in the inorganic oxide wiring 40 where stress is likely to concentrate to be formed, and it is possible to suppress the occurrence of breaks in the inorganic oxide wiring 40.

When metal foil is provided on a substrate by plating, there is a risk of the substrate cracking or chipping when the substrate is immersed in a plating tank or transported. However, in this embodiment, the metal foil 30A is bonded to the substrate 10 via the adhesive layer 20 in the bonding process, so that the substrate 10 is prevented from cracking or chipping. This prevents the manufacturing process and costs of the scanning antenna 1 from increasing. Furthermore, the reliability of the scanning antenna 1 can be improved.

Generally, when the metal wiring 30 is formed by plating, if the metal wiring 30 has a complex shape, the current density is likely to be biased, which may lead to large unevenness in the thickness of the metal wiring 30 and cause the operation of the scanning antenna 1 to become unstable. In this embodiment, as described above, the metal foil 30A has a simple sheet shape, so that unevenness in the thickness of the metal foil 30A formed by plating can be reduced. In addition, in this embodiment, after the metal foil 30A is bonded to the substrate 10, the metal foil 30A is patterned in the metal wiring formation process to form the metal wiring 30. Therefore, unevenness in the thickness of the metal wiring 30 can be reduced, and the reliability of the scanning antenna 1 can be improved.

Generally, when a thick-film wiring pattern is formed by plating, sufficient adhesion between the substrate and the wiring pattern cannot be obtained. One method for improving adhesion between the substrate and the thick-film wiring pattern is to form the thick-film wiring pattern using a conductive paste, but this method requires firing the conductive paste under an inert gas atmosphere, which increases manufacturing costs. In this embodiment, after bonding the metal foil 30A onto the substrate 10, the metal foil 30A is patterned in the metal wiring formation process to form the metal wiring 30. This makes it possible to suppress increases in the manufacturing costs of the thick-film metal wiring 30.

As shown in FIG. 3(d), in this embodiment, the attachment step is a step of attaching the metal foil 30A to the substrate 10 after forming the adhesive layer 20 on the surface of the inorganic oxide layer 40A. That is, according to this embodiment, the adhesive layer 20 is formed so as to cover the inorganic oxide layer 40A. Therefore, gas can be sufficiently removed while the adhesive is applied, and the formation of voids between the inorganic oxide wiring 40 and the adhesive layer 20 can be effectively suppressed. This makes it possible to manufacture a scanning antenna 1 in which the inorganic oxide wiring 40 is securely held by the adhesive layer 20.

Also, as shown as a modified example in FIG. 4, the attachment process may be a process in which an adhesive layer 20 is formed on the surface of the substrate 10 and then the inorganic oxide layer 40A is attached to the substrate 10. In this case, the adhesive layer 20 can be formed on the surface of the substrate 10, which is a flat surface, so that the adhesive layer 20 can be formed easily and with high precision.

Although the embodiment of the present invention and its modified examples have been described above, the specific configuration is not limited to this embodiment, and configuration changes and combinations within the scope of the gist of the present invention are also included. Some modifications are shown below as examples, but these are not all inclusive and other modifications are also possible. These modifications can be freely combined.

Reference Signs List 1: Scanning antenna 10: Substrate 20: Adhesive layer 30: Metal wiring 30A: Metal foil 40: Inorganic oxide wiring 40A: Inorganic oxide layer

Claims (5)

A substrate;
An adhesive layer provided on the substrate;
an inorganic oxide wiring provided on the adhesive layer;
a metal wiring provided on the adhesive layer, at least a portion of which overlaps the inorganic oxide wiring and is connected to the inorganic oxide wiring;
Scanning antenna. the inorganic oxide wiring is made of indium tin oxide;
The metal wiring is made of copper,
The adhesive layer has a linear expansion coefficient of 20×10 ⁻⁶ /K or less.
2. The scanning antenna of claim 1. A metal foil forming step of forming a metal foil;
an inorganic oxide layer forming step of forming an inorganic oxide layer on one surface of the metal foil;
a bonding step of bonding the metal foil to the base material via an adhesive layer such that the inorganic oxide layer faces the base material;
a metal wiring forming step of patterning the metal foil to form a metal wiring;
and forming an inorganic oxide wiring by patterning the inorganic oxide layer.
A method for manufacturing a scanning antenna. The bonding step is a step of bonding the metal foil to the base material after forming an adhesive layer on the surface of the inorganic oxide layer.
A method for manufacturing the scanning antenna of claim 3. The bonding step is a step of forming an adhesive layer on the surface of the base material and then bonding the inorganic oxide layer to the base material.
A method for manufacturing the scanning antenna of claim 3.

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