JP2024018387A - Scanning antenna and method of manufacturing scanning antenna - Google Patents

Abstract

To provide a scanning antenna which is capable of suppressing the occurrence of cracks in an inorganic insulating film and has high reliability.SOLUTION: A scanning antenna includes: a substrate; an adhesive layer provided on the substrate; first wiring made of metal and provided in one portion on the adhesive layer; an organic rigid layer provided in the other portion on the adhesive layer; second wiring made of inorganic oxide and provided so as to straddle a part on the first wiring and a part on the organic rigid layer; and an inorganic insulating film provided so as to straddle over the first wiring, the second wiring and the organic rigid layer, the inorganic insulating film comprising a material containing one of SiNx, SiO2, SiON, and SiOF.SELECTED DRAWING: Figure 1

Description

The present invention relates to a scanning antenna and a method of manufacturing the scanning antenna.

A phased array antenna including antenna units is known as an antenna (scanning antenna) having a function of changing the radiation direction of a beam.
A phased array antenna requires a phase shifter. In order to make it possible to manufacture phased array antennas at low cost, phase shifters using liquid crystals are being put into practical use.

Patent Document 1 describes a scanning antenna that utilizes liquid crystal display technology and includes a low-resistance metal electrode (wiring) and a high-resistance inorganic oxide electrode (wiring).

International Publication No. 2020/121876

When copper is used as a material for a low-resistance metal wiring used in a scanning antenna, the metal wiring is easily oxidized in the atmosphere, and oxidation of the metal wiring can be a factor that reduces the reliability of the scanning antenna. In addition, when fixing metal wiring and a base material through an adhesive layer made of adhesive, the adhesive is easily oxidized and decomposed at high temperatures, resulting in deterioration of the electrical properties of the metal wiring and the weather resistance of the adhesive layer. may cause a decrease in
In order to suppress the occurrence of oxidation of the metal wiring and oxidative decomposition of the adhesive, an inorganic insulating film having high barrier properties may be provided on the metal wiring and the adhesive layer. However, when forming an inorganic insulating film using a film forming method such as chemical vapor deposition, the temperature of the base material, adhesive layer, etc. increases, and the inorganic There was a risk that a load would be applied to the insulating film and cracks would occur in the inorganic insulating film. When cracks occur in the inorganic insulating film, the barrier properties of the inorganic insulating film deteriorate, which may cause oxidation of the metal wiring and oxidative decomposition of the adhesive, which may reduce the reliability of the scanning antenna.

In view of the above circumstances, it is an object of the present invention to provide a highly reliable scanning antenna that can suppress the occurrence of cracks in an inorganic insulating film.

A first aspect of the present invention provides a base material, an adhesive layer provided on the base material, a first metal wiring provided on a part of the adhesive layer, and a first metal wiring provided on the other part of the adhesive layer. a second wiring made of an inorganic oxide and provided over a part of the first wiring and a part of the organic rigid layer; The scanning antenna includes an inorganic insulating film provided over an organic rigid layer, where the inorganic insulating film is made of one of SiNx, SiO2, SiON, and SiOF.

A second aspect of the present invention includes a base material, an adhesive layer provided on the base material, an organic rigid layer provided on the adhesive layer, and a metallic material provided on a part of the organic rigid layer. a first wiring, a second wiring made of an inorganic oxide provided over the organic rigid layer and the first wiring, and a second wiring provided over the first wiring, the second wiring, and the organic rigid layer. A scanning antenna is provided with an inorganic insulating film made of a material such as SiNx, SiO2, SiON, or SiOF.

A third aspect of the present invention is a method of manufacturing a scanning antenna.
This manufacturing method includes a first step of bonding metal foil onto a base material via an adhesive layer, a second step of patterning the metal foil and forming a first wiring on a portion of the adhesive layer, A third step of forming a pre-organic rigid layer on the adhesive layer and the first wiring; a fourth step of patterning the pre-organic rigid layer to form an organic rigid layer on the adhesive layer; and a fourth step of forming a pre-organic rigid layer on the adhesive layer. and a fifth step of forming an inorganic oxide layer on the organic rigid layer; a sixth step of patterning the inorganic oxide layer to form a second wiring; and a seventh step of forming an inorganic insulating film provided over the rigid layer and made of any one of SiNx, SiO2, SiON, and SiOF.

A fourth aspect of the present invention is a method of manufacturing a scanning antenna.
This manufacturing method includes a first step of forming an organic rigid layer on a metal foil, a second step of forming an adhesive layer on the organic rigid layer, and a second step of forming an organic rigid layer on a base material. a fourth step of patterning the metal foil and forming a first wiring on a part of the organic rigid layer; and a fourth step of forming an inorganic oxide layer on the organic rigid layer and the first wiring. a fifth step of forming SiNx; a sixth step of patterning the inorganic oxide layer to form a second wiring; and a seventh step of forming an inorganic insulating film made of one of SiO2, SiON, and SiOF.

According to the present invention, it is possible to provide a highly reliable scanning antenna and a method for manufacturing the scanning antenna, which can suppress the occurrence of cracks in an inorganic insulating film.

FIG. 1 is a cross-sectional view showing a scanning antenna according to a first embodiment of the present invention. 1 is a flowchart showing a method for manufacturing a scanning antenna according to a first embodiment of the present invention. It is a figure showing one process in manufacturing a scanning antenna concerning a 1st embodiment of the present invention. FIG. 3 is a cross-sectional view showing a scanning antenna according to a second embodiment of the present invention. It is a flowchart which shows the manufacturing method of the scanning antenna based on 2nd Embodiment of this invention. It is a figure which shows one process in manufacturing the scanning antenna based on 2nd Embodiment of this invention.

<First embodiment>
A first embodiment of the present invention will be described with reference to FIGS. 1 to 3.
FIG. 1 is a cross-sectional view showing a scanning antenna 1 according to this embodiment. The scanning antenna 1 includes a base material 10, an adhesive layer 20 provided on the base material 10, a first wiring 30 provided on a part of the adhesive layer 20, and a first wiring 30 provided on other parts of the adhesive layer 20. a second wiring 50 provided over a part of the first wiring 30 and a part of the organic rigid layer 40; An inorganic insulating film 60 provided over the rigid layer 40 is provided.

In this specification, each part of the scanning antenna 1 and the manufacturing method will be described with the direction in which the adhesive layer 20 is provided with respect to the base material 10 facing upward. However, the attitude of the scanning antenna 1 in this specification is just an example, and the attitude of the scanning antenna 1 during use and during manufacture is not limited to the attitude shown in this specification.

The base material 10 is made of an insulating material. A typical material for the base material 10 is glass, but flexibility can also be imparted to the base material 10 by using various plastic films. In this embodiment, the material of the base material 10 is glass.
Adhesive layer 20 is provided on base material 10 . The adhesive layer 20 is a layer made of a known adhesive. In this embodiment, the surface roughness of the adhesive layer 20 can be approximately 0.1 μm to 1.0 μm in terms of maximum height roughness Rz.

The first wiring 30 is provided on a portion of the adhesive layer 20. The first wiring 30 is formed in a predetermined pattern shape. The first wiring 30 is bonded to the base material 10 via the adhesive layer 20. In the scanning antenna 1, the first wiring 30 plays the role of a low resistance wiring.
The first wiring 30 is made of metal. In this embodiment, the first wiring 30 is made of copper. The first wiring 30 may be made of a metal with low specific resistance, such as silver or aluminum.
From the viewpoint of reducing resistance, it is desirable that the first wiring 30 is a thick film, and the thickness of the first wiring 30 can be, for example, about 1 μm to 30 μm. In this embodiment, the thickness of the first wiring 30 is 2 μm.

The organic rigid layer 40 is provided on the adhesive layer 20 in a portion where the first wiring 30 is not provided. The organic rigid layer 40 is formed into a predetermined pattern shape.
The organic rigid layer 40 is made of resin. In this embodiment, the main component of the organic rigid layer 40 is acrylic. The main component of the organic rigid layer 40 may be a thermosetting resin or a photocurable resin such as cardo, polyimide, polyamic acid, epoxy, siloxane, or urethane. In this embodiment, the organic rigid layer 40 is a photosensitive acrylic resin.
The thickness of the organic rigid layer 40 is desirably thick from the viewpoint of reducing the load applied to the inorganic insulating film 60 due to thermal expansion, thermal contraction, and thermal flow of the adhesive layer 20. In this embodiment, the thickness of the organic rigid layer 40 is 1.8 μm.
The hardness of the organic rigid layer 40 is desirably greater than the hardness of the adhesive layer 20 from the viewpoint of reducing the load applied to the inorganic insulating film 60 due to thermal expansion, thermal contraction, and thermal flow of the adhesive layer 20. In this embodiment, the hardness of the organic rigid layer 40 is greater than the hardness of the adhesive layer 20.
In this embodiment, the surface roughness of the organic rigid layer 40 is a maximum height roughness Rz of 0.03 μm. As described above, the surface roughness of the adhesive layer 20 is the maximum height roughness Rz of 0.5 μm. That is, the surface shape of the organic rigid layer 40 is smoother than the surface shape of the adhesive layer 20.
The coefficient of linear expansion of the rigid organic layer 40 is preferably smaller than that of the inorganic insulating film 60 in order to reduce the load applied to the inorganic insulating film 60 due to thermal expansion and contraction of the rigid organic layer 40 . In this embodiment, the linear expansion coefficient of the organic rigid layer 40 is 3.5×10 ⁻⁶ /K or less.

The second wiring 50 is provided over a part of the first wiring 30 and a part of the organic rigid layer 40 . Thereby, the first wiring 30 and the second wiring 50 are connected. The second wiring 50 is formed in a predetermined pattern shape. In the scanning antenna 1, the second wiring 50 plays the role of a high resistance wiring.
The second wiring 50 is made of inorganic oxide. In this embodiment, the second wiring 50 is made of indium tin oxide (ITO), which has a high specific resistance. The second wiring 50 may be made of an inorganic oxide with high specific resistance, such as indium zinc oxide (IZO).
From the viewpoint of high resistance, the second wiring 50 is desirably a thin film, and the thickness of the second wiring 50 can be, for example, about 10 nm to 100 nm. In this embodiment, the thickness of the second wiring 50 is 60 nm.

The inorganic insulating film 60 is provided over the first wiring 30, the second wiring 50, and the organic rigid layer 40.
In this embodiment, the inorganic insulating film 60 is made of SiNx. The inorganic insulating film 60 has high gas barrier properties and insulating properties. In the scanning antenna 1, the inorganic insulating film 60 plays the role of a barrier layer that suppresses oxidation of the first wiring 30 and oxidative decomposition of the adhesive layer 20. Furthermore, in the scanning antenna 1, the inorganic insulating film 60 plays the role of an insulating layer that insulates the first wiring 30 and the second wiring 50. The inorganic insulating film 60 made of SiNx is fragile and has low bending resistance, so in order to prevent cracks from occurring in the inorganic insulating film 60, it is necessary to suppress the load applied to the inorganic insulating film 60. . Note that the inorganic insulating film 60 may be made of a material having high gas barrier properties and insulating properties, such as SiO ₂ , SiON, and SiOF.
In this embodiment, the linear expansion coefficient of the inorganic insulating film 60 is 3.5×10 ⁻⁶ /K. As described above, the linear expansion coefficient of the organic rigid layer 40 is 3.5×10 ⁻⁶ /K or less. That is, the linear expansion coefficient of the organic rigid layer 40 is smaller than that of the inorganic insulating film 60.

An example of a method for manufacturing the scanning antenna 1 of this embodiment having the above-described configuration will be described.
As shown in FIG. 2, the method for manufacturing the scanning antenna 1 of this embodiment includes a sub-first step S111, a first step S11, a second step S12, a third step S13, a fourth step S14, It includes a fifth step S15, a sixth step S16, and a seventh step S17.

The sub-first step S111 is a step of applying a liquid adhesive to the entire surface 130a facing one side of the metal foil 130 shown in FIG. 3(a) to form the adhesive layer 20. The adhesive layer 20 is formed on the surface 130a facing one side of the metal foil 130 using a roll coating method.
In this embodiment, the metal foil 130 is a sheet-shaped copper foil. Metal foil 130 can be formed by sputtering or electrolytic plating. In this embodiment, the metal foil 130 is formed by electrolytic plating.

The first step S11 is a step of bonding the metal foil 130 onto the base material 10 via the adhesive layer 20. In the first step S11, first, the adhesive layer 20 formed on the entire surface 130a facing one side of the metal foil 130 is brought into contact with the base material 10. Next, the adhesive layer 20 is dried while the metal foil 130 and the base material 10 are pressed together with a predetermined pressure. Thereby, the metal foil 130 and the base material 10 can be bonded together via the adhesive layer 20.

As described above, in this embodiment, after forming the adhesive layer 20 on the entire surface 130a facing one side of the metal foil 130 in the sub-first step S111, the metal foil 130 and the base material 10 are formed in the first step S11. However, the procedure for bonding the metal foil 130 and the base material 10 together is not limited to this. For example, in the sub-first step, adhesive is applied to the entire surface 10b of the base material 10 facing the other side to form the adhesive layer 20, and in the first step, after bringing the metal foil 130 into contact with the adhesive layer 20, The metal foil 130 and the base material 10 may be bonded together by performing the above-described pressure bonding and drying. In this case, the adhesive layer 20 is formed on the surface 10b of the base material 10 facing the other side by a coating method such as a die coating method or a slit and spin coating method.

The second step S12 is a step of patterning the metal foil 130 and forming the first wiring 30 on a portion of the adhesive layer 20. Patterning of the metal foil 130 is performed by photolithography.
In the second step S12, first, a photoresist layer is formed on the metal foil 130. In this embodiment, a novolac resin, which is a positive type photoresist, was used as the photoresist. The photoresist is applied onto the metal foil 130 using a common spin coater to form a photoresist layer.
Next, the photoresist layer is prebaked. In this embodiment, the photoresist layer is dried by pre-baking in a chamber under reduced pressure. This can shorten the drying time of the photoresist layer. The atmospheric pressure inside the chamber was 130 Pa. The baking temperature was 120°C. The baking time was 2 minutes.
Next, the photoresist layer is exposed to ultraviolet light through a photomask on which a pattern shape corresponding to the first wiring 30 is drawn. The exposure amount was 35 mJ.
Next, the exposed photoresist layer is developed. A positive developer was used as the developer. As a developing method, a spray developing method was used. The developing solution pressure was 0.1 MPa. The temperature of the developer was 25°C. The development time was 25 seconds.
Next, the metal foil 130 is etched to remove the portion of the metal foil 130 from which the photoresist layer has been removed, and the metal foil 130 is patterned into a pattern shape corresponding to the first wiring 30. The etching solution was a mixed aqueous solution of hydrogen peroxide, sulfuric acid, and water. The concentration of hydrogen peroxide solution was approximately 2% to 20%. The concentration of sulfuric acid was approximately 2% to 20%. The temperature of the etching solution was 40°C. Etching time was about 2 minutes.
Next, the photoresist layer remaining on the first wiring 30 is removed. A silicate aqueous solution was used as the peeling solution. The temperature of the film removing solution was 40°C. The film peeling time was 180 seconds.
Next, the first wiring 30 is post-baked. In this embodiment, post-baking is performed in a chamber with a nitrogen atmosphere. The baking temperature was 250°C. The baking time was 90 minutes. When the post-baking of the first wiring 30 is completed, the second step S12 is completed, and the first wiring 30 having a predetermined pattern shape is formed on a part of the adhesive layer 20, as shown in FIG. 3(b). Ru.

The third step S13 is a step of forming a pre-organic rigid layer 140 on the adhesive layer 20 and the first wiring 30. The pre-organic rigid layer 140 is formed on the adhesive layer 20 and the first wiring 30 by a liquid coating technique using a general coater such as spin coating or bar coating. When the third step S13 is completed, a pre-organic rigid layer 140 is formed on the adhesive layer 20 and the first wiring 30, as shown in FIG. 3(b).

The fourth step S14 is a step of patterning the pre-organic rigid layer 140 to form the organic rigid layer 40 on the adhesive layer 20. Patterning of the pre-organic rigid layer 140 is performed by photolithography. Patterning of the pre-organic rigid layer 140 may be performed by laser writing.
In the fourth step S14, first, the pre-organic rigid layer 140 is irradiated with ultraviolet light through a photomask on which a pattern shape corresponding to the organic rigid layer 40 is drawn to expose the pre-organic rigid layer 140. The exposure amount was 600 mJ.
Next, the pre-organic rigid layer 140 is developed, and the uncured portion of the pre-organic rigid layer 140 that has not been exposed to ultraviolet light, that is, the portion of the pre-organic rigid layer 140 located above the first wiring 30 remove. A negative developer was used as the developer. The development time was 60 seconds.
Next, the organic rigid layer 40 is post-baked. In this embodiment, post-baking is performed in a chamber with a nitrogen atmosphere. The baking temperature was 230°C. The baking time was 30 minutes. When the post-baking of the organic rigid layer 40 is completed, the fourth step S14 is completed, and the organic rigid layer 40 having a predetermined pattern shape is formed on the adhesive layer 20, as shown in FIG. 3(c).

The fifth step S15 is a step of forming an inorganic oxide layer 150 on the first wiring 30 and the organic rigid layer 40. The inorganic oxide layer 150 is formed by depositing indium tin oxide (ITO) on the first wiring 30 and the organic rigid layer 40 by sputtering. The power value for sputtering was 5.6 kW. The conveyance speed of the base material 10 was 495 nm/sec. When the fifth step S15 is completed, an inorganic oxide layer 150 is formed on the first wiring 30 and the organic rigid layer 40, as shown in FIG. 3(d).

The sixth step S16 is a step of patterning the inorganic oxide layer 150 to form the second wiring 50. Patterning of the inorganic oxide layer 150 is performed by photolithography.
In the sixth step S16, first, a photoresist layer is formed on the inorganic oxide layer 150. In this embodiment, a novolac resin, which is a positive type photoresist, was used as the photoresist.
Next, the photoresist layer is prebaked. In this embodiment, prebaking was performed in a chamber under reduced pressure. The atmospheric pressure inside the chamber was 130 Pa. The baking temperature was 120°C. The baking time was 2 minutes.
Next, the photoresist layer is exposed to ultraviolet light through a photomask on which a pattern shape corresponding to the second wiring 50 is drawn. In this embodiment, the exposure amount was 70 mJ.
Next, the exposed photoresist layer is developed. A positive developer was used as the developer. As a developing method, a spray developing method was used. The developing solution pressure was 0.15 MPa. The temperature of the developer was 25°C. The development time was 100 seconds.
Next, the inorganic oxide layer 150 is etched to remove the portion of the inorganic oxide layer 150 from which the photoresist layer has been removed, and the inorganic oxide layer 150 is patterned into a pattern shape corresponding to the second wiring 50. do. The etching solution was an oxalic acid aqueous solution. The temperature of the etching solution was 40°C. Etching time was 60 seconds.
Next, the photoresist layer remaining on the second wiring 50 is removed. A silicate aqueous solution was used as the peeling solution. The temperature of the film removing solution was 40°C. The film peeling time was 180 seconds. When the photoresist layer is removed, the sixth step S16 is completed, and the second wiring 50 having a predetermined pattern is formed as shown in FIG. 3(e). The second wiring 50 is formed over the first wiring 30 and the organic rigid layer 40 . Thereby, the first wiring 30 and the second wiring 50 are connected to each other. The first wiring 30 or the organic rigid layer 40 is exposed in the portion where the inorganic oxide layer 150 is removed.

The seventh step S17 is a step of forming an inorganic insulating film 60 spanning over the first wiring 30, the second wiring 50, and the organic rigid layer 40. The inorganic insulating film 60 is provided by forming a SiNx film on the first wiring 30, the second wiring 50, and the organic rigid layer 40 using a film forming method such as chemical vapor deposition. When the seventh step S17 is completed, as shown in FIG. 1, an inorganic insulating film 60 is provided spanning over the first wiring 30, the second wiring 50, and the organic rigid layer 40. As described above, since the inorganic insulating film 60 has high gas barrier properties and insulating properties, the inorganic insulating film 60 can suppress oxidation of the first wiring 30 and oxidative decomposition of the adhesive layer 20.
In the seventh step S17 described above, the base material 10, the adhesive layer 20, the first wiring 30, the organic rigid layer 40, and the second wiring 50 are each heated by the heat generated when forming the inorganic insulating film 60. Therefore, a load is applied to the organic rigid layer 40 provided directly on the adhesive layer 20, especially due to thermal expansion, thermal contraction, and thermal flow of the adhesive layer 20.
Through the above steps, the scanning antenna 1 of this embodiment is completed.

According to this embodiment, the scanning antenna 1 includes a base material 10, an adhesive layer 20 provided on the base material 10, a first metal wiring 30 provided on a portion of the adhesive layer 20, An organic rigid layer 40 provided on other parts of the adhesive layer 20, and a second wiring made of inorganic oxide provided spanning a part of the first wiring 30 and a part of the organic rigid layer 40. 50, and an inorganic insulating film 60 provided over the first wiring 30, the second wiring 50, and the organic rigid layer 40, and the inorganic insulating film 60 is made of any one of SiNx, SiO2, SiON, and SiOF. Constructed from the following materials. Therefore, since a part of the inorganic insulating film 60 comes into contact with the adhesive layer 20 via the organic rigid layer 40, thermal expansion, thermal contraction, and thermal expansion of the adhesive layer 20 due to heat generated when forming the inorganic insulating film 60 are avoided. The load caused by the flow is indirectly applied from the adhesive layer 20 to the inorganic insulating film 60 via the organic rigid layer 40 . As a result, the load applied to the inorganic insulating film 60 can be reduced, so it is possible to suppress the occurrence of cracks in the inorganic insulating film 60 made of a material such as SiNx that is fragile and has low bending resistance. Deterioration of barrier properties can be suppressed. Therefore, since oxidation of the first wiring 30 and oxidative decomposition of the adhesive layer 20 can be suppressed, deterioration of the electrical characteristics of the first wiring 30 and deterioration of the weather resistance of the adhesive layer 20 can be suppressed. Reliability can be increased.

Furthermore, in this embodiment, as described above, the hardness of the organic rigid layer 40 is greater than the hardness of the adhesive layer 20, so the thermal expansion, thermal contraction, and thermal flow of the adhesive layer 20 causes a load on the organic rigid layer 40. Even if this is applied, the amount of deformation of the organic rigid layer 40 can be reduced. Therefore, the load applied from the adhesive layer 20 to the inorganic insulating film 60 via the organic rigid layer 40 can be further reduced, and the occurrence of cracks in the inorganic insulating film 60 can be more preferably suppressed. Therefore, the deterioration of the electrical characteristics of the first wiring 30 and the deterioration of the weather resistance of the adhesive layer 20 can be more suitably suppressed, and the reliability of the scanning antenna 1 can be further improved.

Furthermore, in this embodiment, the surface shape of the organic rigid layer 40 is smoother than the surface shape of the adhesive layer 20, as described above. Therefore, compared to the case where the second wiring 50 is provided directly on the adhesive layer 20, it is possible to suppress the occurrence of cracks, breaks, etc. in the second wiring 50. Therefore, the reliability of the scanning antenna 1 can be further improved.

Further, in this embodiment, the first wiring 30 is bonded to the base material 10 via the adhesive layer 20. The internal stress of the first wiring 30 formed as a thick film is large, and the adhesion between the first wiring 30 made of metal and the base material 10 is small. Therefore, when the first wiring 30 is provided directly on the base material 10, lifting and peeling of the first wiring 30 from the base material 10 is likely to occur. However, in this embodiment, the first wiring 30 is bonded to the base material 10 via the adhesive layer 20 made of an adhesive that has high adhesion to both the first wiring 30 and the base material 10. It is possible to suppress the occurrence of lifting and peeling of the first wiring 30 from the substrate. Therefore, the reliability of the scanning antenna 1 can be further improved.

Further, in the present embodiment, the second wiring 50 is provided over a part of the first wiring 30 and a part of the organic rigid layer 40 . If the organic rigid layer 40 is not provided and the second wiring 50 is provided over the first wiring 30 and the adhesive layer 20, the sidewall of the first wiring 30 and the adhesive layer 20 of the second wiring 50 The part that comes into contact with the boundary between the wire and the wire is likely to break. However, in this embodiment, since the side wall of the first wiring 30 is covered with the organic rigid layer 40, it is possible to prevent the second wiring 50 from coming into contact with the boundary between the side wall of the first wiring 30 and the adhesive layer 20. Disconnection of the wiring 50 can be suppressed. Therefore, the reliability of the scanning antenna 1 can be further improved.

According to this embodiment, the linear expansion coefficient of the organic rigid layer 40 is smaller than that of the inorganic insulating film 60. Therefore, the load applied to the inorganic insulating film 60 can be reduced due to thermal expansion and thermal contraction of the organic rigid layer 40. Therefore, the occurrence of cracks in the inorganic insulating film 60 can be better suppressed, and the reliability of the scanning antenna 1 can be further improved.

According to the present embodiment, the method for manufacturing the scanning antenna 1 includes a first step S11 of bonding the metal foil 130 onto the base material 10 via the adhesive layer 20, patterning the metal foil 130, and forming the adhesive layer 20 on the base material 10. A second step S12 of forming the first wiring 30 on a part of the upper part, a third step S13 of forming the pre-organic rigid layer 140 on the adhesive layer 20 and the first wiring 30, and a pattern on the pre-organic rigid layer 140. a fourth step S14 in which an organic rigid layer 40 is formed on the adhesive layer 20; a fifth step S15 in which an inorganic oxide layer 150 is formed on the first wiring 30 and the organic rigid layer 40; A sixth step S16 in which the material layer 150 is patterned to form the second wiring 50; , and a seventh step S17 of forming an inorganic insulating film 60 made of any one of materials such as SiOF. Generally, when a thick film wiring pattern is formed by plating, sufficient adhesion between the base material and the wiring pattern cannot be obtained. One way to improve the adhesion between a base material and a thick film wiring pattern is to form a thick film wiring pattern using conductive paste.In this method, the conductive paste is fired in an inert gas atmosphere. Since this is necessary, manufacturing costs will increase. However, in the present embodiment, after bonding the metal foil 130 onto the base material 10 via the adhesive layer 20 in the first step S11, the metal foil 130 is patterned in the second step S12 to form the first Wiring 30 is formed. Therefore, it is possible to suppress an increase in the manufacturing cost of the thick-film first wiring 30.

Generally, when forming a metal first wiring by plating, if the first wiring has a complicated shape, the current density tends to be biased, so the film thickness of the first wiring tends to be uneven. There is a possibility that the operation of the scanning antenna 1 may become unstable. However, in this embodiment, as described above, since the metal foil 130 has a simple sheet shape, it is possible to reduce the unevenness in the thickness of the metal foil 130 formed by plating. Further, in the present embodiment, in the first step S11, the metal foil 130 is bonded onto the base material 10 via the adhesive layer 20, and then in the second step S12, the metal foil 130 is patterned and the first Wiring 30 is formed. Therefore, unevenness in the film thickness of the first wiring 30 can be reduced, and the reliability of the scanning antenna 1 can be improved.

Generally, when metal foil is provided on a base material by plating, there is a risk that cracks and chips may occur in the base material when the base material is immersed in a plating tank or when the base material is transported. However, in this embodiment, since the metal foil 130 is bonded onto the base material 10 via the adhesive layer 20 in the first step S11, it is possible to suppress the occurrence of cracks and chips in the base material 10. Therefore, it is possible to suppress an increase in the number of manufacturing steps and manufacturing cost of the scanning antenna 1. Furthermore, the reliability of the scanning antenna 1 can be improved.

Generally, the adhesion between the glass base material 10 and the copper first wiring 30 is low, so when the first wiring is provided on the base material by plating, the first wiring is likely to float off the base material. , easy to peel off. However, in this embodiment, since the first wiring 30 is bonded onto the base material 10 via the adhesive layer 20 in the first step S11, lifting and peeling of the first wiring 30 from the base material 10 may occur. can be suppressed. Therefore, the reliability of the scanning antenna 1 can be improved.

<Second embodiment>
A second embodiment of the present invention will be described with reference to FIGS. 4 to 6. In addition, in the following description, the same reference numerals are given to the same components as in the above-described first embodiment, and the description thereof may be omitted.

FIG. 4 is a cross-sectional view showing the scanning antenna 201 according to this embodiment. The scanning antenna 201 includes a base material 10, an adhesive layer 20 provided on the base material 10, an organic rigid layer 240 provided on the adhesive layer 20, and a second organic layer provided on a part of the organic rigid layer 240. 1 wiring 30, a second wiring 50 provided over the organic rigid layer 240 and the first wiring 30, and a second wiring 50 provided over the first wiring 30, the second wiring 50, and the organic rigid layer 240. and an inorganic insulating film 260.

The aspect of the base material 10 of this embodiment is the same as the aspect of the base material 10 of 1st Embodiment.
The aspect of the adhesive layer 20 of this embodiment is the same as the aspect of the adhesive layer 20 of 1st Embodiment.
The organic rigid layer 240 is provided entirely on the adhesive layer 20. Other aspects of the organic rigid layer 240 are the same as those of the organic rigid layer 240 of the first embodiment.
The first wiring 30 is provided on a portion of the organic rigid layer 240. Other aspects of the first wiring 30 of this embodiment are the same as other aspects of the first wiring 30 of the first embodiment.
The aspect of the second wiring 50 of this embodiment is the same as the aspect of the second wiring 50 of the first embodiment.
The inorganic insulating film 260 is provided over the first wiring 30, the second wiring 50, and the organic rigid layer 240. Other aspects of the inorganic insulating film 260 are the same as other aspects of the inorganic insulating film 60 of the first embodiment. Note that the inorganic insulating film 260 may be made of a material having high gas barrier properties and insulating properties, such as SiO ₂ , SiON, and SiOF.

An example of a method for manufacturing the scanning antenna 201 of this embodiment having the above-described configuration will be described.
As shown in FIG. 5, the method for manufacturing the scanning antenna 201 of this embodiment includes a first step S21, a second step S22, a third step S23, a fourth step S24, a fifth step S25, and a second step S22. It has a sixth step S26 and a seventh step S27.

The first step S21 is a step of forming an organic rigid layer 240 on the surface 130a facing one side of the metal foil 130 shown in FIG. 6(a). The organic rigid layer 240 is formed on the surface 130a of the metal foil 130 facing one side by a liquid coating technique using a general coater such as spin coating or bar coating. When the first step S21 is completed, an organic rigid layer 240 is formed on the surface 130a of the metal foil 130 facing one side.

The second step S22 is a step of applying a liquid adhesive onto the organic rigid layer 240 to form the adhesive layer 20. The adhesive layer 20 is formed on the organic rigid layer 240 using a roll coating method. When the second step S22 is completed, the adhesive layer 20 is formed on the organic rigid layer 240, as shown in FIG. 6(a).

The third step S23 is a step of bonding the metal foil 130 onto the base material 10 via the adhesive layer 20 and the organic rigid layer 240. In the third step S23, first, the organic rigid layer 240 and the base material 10 are brought into contact. Next, the adhesive layer 20 is dried while the metal foil 130 and the base material 10 are pressed together with a predetermined pressure, and the metal foil 130 and the base material 10 are bonded together. When the third step S23 is completed, the metal foil 130 is bonded onto the base material 10 via the adhesive layer 20 and the organic rigid layer 240, as shown in FIG. 6(a).

The fourth step S24 is a step of patterning the metal foil 130 and forming the first wiring 30 on a portion of the organic rigid layer 240. Patterning of the metal foil 130 is performed by photolithography. The work contents of the fourth step S24 are the same as the work contents of the second step S12 of the first embodiment. When the fourth step S24 is completed, the first wiring 30 having a predetermined pattern shape is formed on a part of the organic rigid layer 240, as shown in FIG. 6(b).

The fifth step S25 is a step of forming the inorganic oxide layer 150 on the organic rigid layer 240 and the first wiring 30. The inorganic oxide layer 150 is formed by depositing indium tin oxide (ITO) on the first wiring 30 and the organic rigid layer 240 by sputtering. The work contents of the fifth step S25 are similar to the work contents of the fifth step S15 of the first embodiment. When the fifth step S25 is completed, the inorganic oxide layer 150 is formed on the organic rigid layer 240 and the first wiring 30, as shown in FIG. 6(b).

The sixth step S26 is a step of patterning the inorganic oxide layer 150 to form the second wiring 50. Patterning of the inorganic oxide layer 150 is performed by photolithography. The work contents of the sixth step S26 are the same as the work contents of the sixth step S16 of the first embodiment. When the sixth step S26 is completed, the second wiring 50 having a predetermined pattern shape is formed, as shown in FIG. 6(c). The second wiring 50 is formed over the organic rigid layer 240 and the first wiring 30. Thereby, the first wiring 30 and the second wiring 50 are connected to each other. Further, the first wiring 30 or the organic rigid layer 240 is exposed in the portion where the inorganic oxide layer 150 is removed.

The seventh step S27 is a step of forming an inorganic insulating film 260 spanning over the first wiring 30, the second wiring 50, and the organic rigid layer 240. The inorganic insulating film 260 is provided by forming a SiNx film on the first wiring 30, the second wiring 50, and the organic rigid layer 240 using a film forming method such as chemical vapor deposition. The work contents of the seventh step S27 are similar to the work contents of the seventh step S17 of the first embodiment. When the seventh step S27 is completed, as shown in FIG. 4, an inorganic insulating film 260 is provided spanning over the first wiring 30, the second wiring 50, and the organic rigid layer 240. As described above, since the inorganic insulating film 260 has high gas barrier properties and insulating properties, the inorganic insulating film 260 can suppress oxidation of the first wiring 30 and oxidative decomposition of the adhesive layer 20.
Through the above steps, the scanning antenna 201 of this embodiment is completed.

According to this embodiment, the scanning antenna 201 includes the base material 10 , the adhesive layer 20 provided on the base material 10 , the organic rigid layer 240 provided on the adhesive layer 20 , and the organic rigid layer 240 provided on the organic rigid layer 240 . A first wiring 30 made of metal is provided in a part, a second wiring 50 made of an inorganic oxide is provided over the organic rigid layer 240 and the first wiring 30, and a second wiring 50 is provided on the first wiring 30. , an inorganic insulating film 260 provided over the second wiring 50 and the organic rigid layer 240, and the inorganic insulating film 260 is made of one of SiNx, SiO2, SiON, and SiOF. Therefore, since the inorganic insulating film 260 contacts the adhesive layer 20 through the organic rigid layer 240, thermal expansion, thermal contraction, and thermal flow of the adhesive layer 20 due to the heat generated when forming the inorganic insulating film 260 occurs. The load is applied indirectly from the adhesive layer 20 to the inorganic insulating film 260 via the organic rigid layer 240. As a result, the load applied to the inorganic insulating film 260 can be reduced, so it is possible to suppress the occurrence of cracks in the inorganic insulating film 260 made of a material such as SiNx that is fragile and has low bending resistance. Deterioration of barrier properties can be suppressed. Therefore, since oxidation of the first wiring 30 and oxidative decomposition of the adhesive layer 20 can be suppressed, deterioration of the electrical characteristics of the first wiring 30 and deterioration of the weather resistance of the adhesive layer 20 can be suppressed. Reliability can be increased.

According to the present embodiment, the method for manufacturing the scanning antenna 201 includes a first step S21 of forming the organic rigid layer 240 on the metal foil 130, and a second step S22 of forming the adhesive layer 20 on the organic rigid layer 240. , a third step S23 of bonding the metal foil 130 onto the base material 10 via the adhesive layer 20 and the organic rigid layer 240, and patterning the metal foil 130 to form a first wiring on a part of the organic rigid layer 240. 30, a fifth step S25 of forming an inorganic oxide layer 150 on the organic rigid layer 240 and the first wiring 30, and patterning the inorganic oxide layer 150 to form the second wiring. 50, and an inorganic film provided over the first wiring 30, the second wiring 50, and the organic rigid layer 240 and made of any one of SiNx, SiO2, SiON, and SiOF. and a seventh step S27 of forming an insulating film 260. Therefore, compared to the manufacturing method of the scanning antenna 1 of the first embodiment, there is no need for the step of patterning the organic rigid layer 240 to form the organic rigid layer 240 into a predetermined pattern shape. Therefore, the manufacturing process of the scanning antenna 201 can be simplified, and the reliability of the scanning antenna 201 can be improved.

Although the embodiment of the present invention has been described above, the specific configuration is not limited to this embodiment, and includes modifications and combinations of the configuration without departing from the gist of the present invention. Some changes are illustrated below, but these are not all, and changes other than these are also possible. These changes can be freely combined.

In the scanning antenna manufacturing method of the present invention, the order of each step may be changed. For example, the metal layer may be patterned before bonding the metal foil coated with the adhesive layer to the base material.

The cross-sectional shape of the first wiring is not limited to a substantially rectangular shape, but may be a tapered shape that gradually shrinks as it moves away from the adhesive layer. In this case, since the normal to the side surface of the first wiring faces upward, the inorganic oxide layer can be stably formed on the side surface of the first wiring by sputtering. Therefore, the thickness of the second wiring can be made uniform on the first wiring, and the reliability of the scanning antenna can be improved.

1,201 Scanning antenna 10 Base material 20 Adhesive layer 30 First wiring 40, 240 Organic rigid layer 50 Second wiring 60, 260 Inorganic insulating film 130 Metal foil 140 Pre-organic rigid layer 150 Inorganic oxide layer S11, S21 First step S12, S22 Second process S13, S23 Third process S14, S24 Fourth process S15, S25 Fifth process S16, S26 Sixth process S17, S27 Seventh process

Claims (5)

base material and
an adhesive layer provided on the base material;
a first metal wiring provided on a portion of the adhesive layer;
an organic rigid layer provided on another portion of the adhesive layer;
a second wiring made of an inorganic oxide and provided spanning a part of the first wiring and a part of the organic rigid layer;
an inorganic insulating film provided over the first wiring, the second wiring, and the organic rigid layer;
Equipped with
In the scanning antenna, the inorganic insulating film is made of one of SiNx, SiO2, SiON, and SiOF. base material and
an adhesive layer provided on the base material;
an organic rigid layer provided on the adhesive layer;
A first metal wiring provided on a portion of the organic rigid layer;
a second wiring made of an inorganic oxide and provided over the organic rigid layer and the first wiring;
an inorganic insulating film provided over the first wiring, the second wiring, and the organic rigid layer;
Equipped with
In the scanning antenna, the inorganic insulating film is made of one of SiNx, SiO2, SiON, and SiOF. 3. The scanning antenna according to claim 1, wherein the linear expansion coefficient of the organic rigid layer is smaller than that of the inorganic insulating film. A first step of laminating metal foil onto the base material via an adhesive layer,
a second step of patterning the metal foil to form a first wiring on a portion of the adhesive layer;
a third step of forming a pre-organic rigid layer on the adhesive layer and on the first wiring;
a fourth step of patterning the pre-organic rigid layer to form an organic rigid layer on the adhesive layer;
a fifth step of forming an inorganic oxide layer on the first wiring and on the organic rigid layer;
a sixth step of patterning the inorganic oxide layer to form a second wiring;
a seventh step of forming an inorganic insulating film that is provided over the first wiring, the second wiring, and the organic rigid layer and is made of any one of SiNx, SiO2, SiON, and SiOF; A method of manufacturing a scanning antenna having the following. A first step of forming an organic rigid layer on the metal foil,
a second step of forming an adhesive layer on the organic rigid layer;
a third step of laminating metal foil onto the base material via the adhesive layer and the organic rigid layer;
a fourth step of patterning the metal foil to form a first wiring on a portion of the organic rigid layer;
a fifth step of forming an inorganic oxide layer on the organic rigid layer and the first wiring;
a sixth step of patterning the inorganic oxide layer to form a second wiring;
a seventh step of forming an inorganic insulating film that is provided over the first wiring, the second wiring, and the organic rigid layer and is made of any one of SiNx, SiO2, SiON, and SiOF; A method of manufacturing a scanning antenna having the following.

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