JP2024044744A - 撮像装置、撮像システム、移動体および機器 - Google Patents

撮像装置、撮像システム、移動体および機器 Download PDF

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Publication number
JP2024044744A
JP2024044744A JP2022150477A JP2022150477A JP2024044744A JP 2024044744 A JP2024044744 A JP 2024044744A JP 2022150477 A JP2022150477 A JP 2022150477A JP 2022150477 A JP2022150477 A JP 2022150477A JP 2024044744 A JP2024044744 A JP 2024044744A
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JP
Japan
Prior art keywords
pixel
imaging
aperture
imaging device
pixels
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Pending
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JP2022150477A
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English (en)
Japanese (ja)
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JP2024044744A5 (https=
Inventor
寿士 高堂
Hisashi Takado
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Canon Inc
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Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2022150477A priority Critical patent/JP2024044744A/ja
Priority to US18/369,342 priority patent/US12563315B2/en
Publication of JP2024044744A publication Critical patent/JP2024044744A/ja
Publication of JP2024044744A5 publication Critical patent/JP2024044744A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H04N25/633—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current by using optical black pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2022150477A 2022-09-21 2022-09-21 撮像装置、撮像システム、移動体および機器 Pending JP2024044744A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2022150477A JP2024044744A (ja) 2022-09-21 2022-09-21 撮像装置、撮像システム、移動体および機器
US18/369,342 US12563315B2 (en) 2022-09-21 2023-09-18 Imaging device, imaging system, moving body, and instrument

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022150477A JP2024044744A (ja) 2022-09-21 2022-09-21 撮像装置、撮像システム、移動体および機器

Publications (2)

Publication Number Publication Date
JP2024044744A true JP2024044744A (ja) 2024-04-02
JP2024044744A5 JP2024044744A5 (https=) 2025-09-17

Family

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Family Applications (1)

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JP2022150477A Pending JP2024044744A (ja) 2022-09-21 2022-09-21 撮像装置、撮像システム、移動体および機器

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Country Link
US (1) US12563315B2 (https=)
JP (1) JP2024044744A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7646611B2 (ja) * 2022-09-28 2025-03-17 キヤノン株式会社 光電変換装置、制御方法、及びコンピュータプログラム
JP2024165438A (ja) 2023-05-17 2024-11-28 キヤノン株式会社 光電変換装置
CN119815200B (zh) * 2024-12-27 2025-11-07 维沃移动通信有限公司 像素电路、图像传感器、摄像模组、设备及图像生成方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7969488B2 (en) 2005-08-03 2011-06-28 Micron Technologies, Inc. Correction of cluster defects in imagers
US8619163B2 (en) * 2009-09-18 2013-12-31 Canon Kabushiki Kaisha Solid state imaging using a correction parameter for correcting a cross talk between adjacent pixels
JP6384323B2 (ja) * 2012-03-30 2018-09-05 株式会社ニコン 撮像素子および撮像装置
JP6541324B2 (ja) 2014-10-17 2019-07-10 キヤノン株式会社 固体撮像装置及びその駆動方法、並びに、撮像システム
JP6448340B2 (ja) 2014-12-10 2019-01-09 キヤノン株式会社 固体撮像装置、撮像システム及び固体撮像装置の駆動方法
US9912886B2 (en) 2014-12-17 2018-03-06 Canon Kabushiki Kaisha Image capturing apparatus and driving method of image sensor
JP6628497B2 (ja) 2015-05-19 2020-01-08 キヤノン株式会社 撮像装置、撮像システム、および画像処理方法
US10764523B2 (en) * 2016-03-31 2020-09-01 Sony Corporation Solid-state imaging device and electronic apparatus
JP6436953B2 (ja) 2016-09-30 2018-12-12 キヤノン株式会社 固体撮像装置及びその駆動方法、並びに撮像システム
JP6929671B2 (ja) * 2017-03-17 2021-09-01 キヤノン株式会社 撮像装置及び撮像システム
JP7075208B2 (ja) 2017-12-22 2022-05-25 キヤノン株式会社 撮像装置および撮像システム
JP7157529B2 (ja) 2017-12-25 2022-10-20 キヤノン株式会社 撮像装置、撮像システム、および撮像装置の駆動方法
JP7260990B2 (ja) 2018-10-26 2023-04-19 キヤノン株式会社 撮像装置及び撮像システム
JP7237622B2 (ja) 2019-02-05 2023-03-13 キヤノン株式会社 光電変換装置
JP7592439B2 (ja) 2020-09-18 2024-12-02 キヤノン株式会社 撮像装置及び撮像システム
JP7686605B2 (ja) * 2022-09-28 2025-06-02 キヤノン株式会社 光電変換装置、制御方法、及びコンピュータプログラム

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US20240098381A1 (en) 2024-03-21
US12563315B2 (en) 2026-02-24

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